RLT1060-150G
Abstract: No abstract text available
Text: RLT1060-150G TECHNICAL DATA High Power Infrared Laser Diode High power, single mode laser diode, featuring high reliability and long lifetime. Suitable for many applications including medical laser therapy and defense Features • • • • Lasing Mode Structure: single mode
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RLT1060-150G
150mW
RLT1060-150G
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G3F diode
Abstract: No abstract text available
Text: Laser Diodes Gemini Series - 9x× nm High Brightness Laser Diode BLD-91-tt-50W-G3-F-10-c-l-xxx BLD-94-tt-50W-G3-F-10-c-l-xxx BLD-98-tt-50W-G3-F-10-c-l-xxx High Power Laser Diode Modules are manufactured by adopting specialized fibercoupling techniques, resulting in volume products with a high efficiency, stability and
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BLD-91-tt-50W-G3-F-10-c-l-xxx
BLD-94-tt-50W-G3-F-10-c-l-xxx
BLD-98-tt-50W-G3-F-10-c-l-xxx
G3F diode
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Untitled
Abstract: No abstract text available
Text: Laser Diodes 9x× nm High Power Diode Laser BLD-91-tt-10W-02-F-10-c-l-22 BLD-94-tt-10W-02-F-10-c-l-22 BLD-98-tt-10W-02-F-10-c-l-22 High Power Laser Diode Modules are manufactured by adopting specialized fibercoupling techniques, resulting in volume products with a high efficiency, stability and
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BLD-91-tt-10W-02-F-10-c-l-22
BLD-94-tt-10W-02-F-10-c-l-22
BLD-98-tt-10W-02-F-10-c-l-22
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Untitled
Abstract: No abstract text available
Text: Laser Diodes Ant Series- 9x× nm High Brightness Laser Diode BLD-91-tt-30W-A3-F-10-c-l-22 BLD-94-tt-30W-A3-F-10-c-l-22 BLD-98-tt-30W-A3-F-10-c-l-22 High Power Laser Diode Modules are manufactured by adopting specialized fibercoupling techniques, resulting in volume products with a high efficiency, stability and
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BLD-91-tt-30W-A3-F-10-c-l-22
BLD-94-tt-30W-A3-F-10-c-l-22
BLD-98-tt-30W-A3-F-10-c-l-22
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Untitled
Abstract: No abstract text available
Text: Laser Diodes Ant Series- 9x× nm High Brightness Laser Diode BLD-91-tt-20W-A2-F-10-c-l-22 BLD-94-tt-20W-A2-F-10-c-l-22 BLD-98-tt-20W-A2-F-10-c-l-22 High Power Laser Diode Modules are manufactured by adopting specialized fibercoupling techniques, resulting in volume products with a high efficiency, stability and
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BLD-91-tt-20W-A2-F-10-c-l-22
BLD-94-tt-20W-A2-F-10-c-l-22
BLD-98-tt-20W-A2-F-10-c-l-22
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RLT850-150GS
Abstract: No abstract text available
Text: RLT850-150GS TECHNICAL DATA High Power Infrared Laser Diode Features • • • • Lasing Mode Structure: single mode Peak Wavelength : typ. 852 nm Optical Output Power: 150 mW Package: 9 mm Electrical Connection Pin Configuration Bottom View n-type PIN
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RLT850-150GS
RLT850-150GS
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RLT850-100GS
Abstract: No abstract text available
Text: RLT850-100GS TECHNICAL DATA High Power Infrared Laser Diode Features • • • • Lasing Mode Structure: single mode Peak Wavelength : typ. 852 nm Optical Output Power: 100 W Package: 9 mm Electrical Connection Pin Configuration Bottom View n-type PIN 1
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RLT850-100GS
RLT850-100GS
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RLT808-150GS
Abstract: No abstract text available
Text: RLT808-150GS TECHNICAL DATA High Power Infrared Laser Diode Features • • • • Lasing Mode Structure: single mode Peak Wavelength : typ. 808 nm Optical Output Power: 150 W Package: 9 mm Electrical Connection Pin Configuration Bottom View n-type PIN 1
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RLT808-150GS
RLT808-150GS
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RLT780-150GS
Abstract: No abstract text available
Text: RLT780-150GS TECHNICAL DATA High Power Infrared Laser Diode Features • • • • Lasing Mode Structure: single mode Peak Wavelength : typ. 780 nm Optical Output Power: 150 mW Package: 9 mm Electrical Connection Pin Configuration Bottom View n-type PIN
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RLT780-150GS
RLT780-150GS
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RLT790-80MGS
Abstract: No abstract text available
Text: RLT790-80MGS TECHNICAL DATA High Power Infrared Laser Diode Features • • • • Lasing Mode Structure: single mode Peak Wavelength : typ. 790 nm Optical Output Power: 80 mW Package: 5.6 mm Electrical Connection Pin Configuration Bottom View n-type PIN
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RLT790-80MGS
RLT790-80MGS
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SM 850nm laser vcsel
Abstract: No abstract text available
Text: Laser Diodes Single-mode & polarizationstable VCSEL 850 nm, TO46, 2.0 mW • Single-mode • Ideal circular gaussian beam • Stable Polarization • Built-in ESD protection structure PRELIMINARY ELECTRO-OPTICAL CHARACTERISTICS T=20°C unless otherwise stated
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ULM850-L2-PL-S0101U
Abstract: ULM850-PM-TN-S46FZP ULM850-VP-PL-S46XOP 894nm ULM850-PM-TN-S46XZP SM 850nm laser vcsel ulm tdlas vcsel SMD MAP 3959 ulm vcsel reference
Text: Single Mode VCSEL 850nm,TO46,0.5mW Ideal circular gaussian beam Built-in ESD protection structure High reliability, 10 years @ 85°C INVISIBLE LASER RADIATION AVOID BEAM EXPOSURE CLASS 3B LASER PRODUCT ELECTRO-OPTICAL CHARACTERISTICS T=20°C unless otherw ise stated
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850nm
850nm-long-life-sm-vcsel
ULM850-L2-PL-S0101U
ULM850-PM-TN-S46FZP
ULM850-VP-PL-S46XOP
894nm
ULM850-PM-TN-S46XZP
SM 850nm laser vcsel ulm
tdlas
vcsel SMD
MAP 3959
ulm vcsel reference
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ADE-208-1410
Abstract: HL6323MG Hitachi DSA00230
Text: HL6323MG AlGaInP Laser Diode ADE-208-1410 Z 1st Edition Mar. 2001 Description The HL6323MG is a 0.63 µm band AlGaInP laser diode (LD) with a multi-quantum well (MQW) structure. It is suitable as a longer distance operating range for laser markers and a higher speed for positioning
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HL6323MG
ADE-208-1410
HL6323MG
HL6323MG:
ADE-208-1410
Hitachi DSA00230
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RLT1060_350G
Abstract: No abstract text available
Text: RLT1060-350G TECHNICAL DATA High Power Infrared Laser Diode Lasing wavelength: 1064 nm, typ. Max. optical power: 350 mW Package: 9 mm SOT-148 PIN CONNECTION: 1) Laserdiode anode 2) Laserdiode cathode and photodiode cathode 3) Photodiode anode Optical-Electrical Characteristics (Tc = 25°C)
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RLT1060-350G
OT-148)
rlt1060
RLT1060_350G
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Light Detector laser
Abstract: short distance measurement ir infrared diode
Text: Opto-semiconductors Condensed Catalog HAMAMATSU PHOTONICS K.K. Our unique photonics technology delivers highly sophisticated opto-semiconductors with high-sensitivity and high-speed response. Hamamatsu Photonics has been at the cutting edge of photonics technology for 60 years. In that
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KOTH0001E15
Light Detector laser
short distance measurement ir infrared diode
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21CFR(J) Class1
Abstract: No abstract text available
Text: AFCT-57V6NSZ Small Form Factor Pluggable SFP LC Optical Transceiver for 1.25GBd Ethernet at Extended Link Lengths (Up to 40km) Data Sheet Description The AFCT-57V6NSZ transceiver is a specially customised low-cost and hot-pluggable SFP MSA-compliant optical
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AFCT-57V6NSZ
25GBd
AFCT-8472,
8B/10B
TIA/EIA-604-10,
AV01-0655EN
AV02-0620EN
21CFR(J) Class1
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AFCT-57V6AUSZ
Abstract: No abstract text available
Text: AFCT-57V6USZ Small Form Factor Pluggable SFP LC Optical Transceiver for 1.25GBd Ethernet at Extended Link Lengths (Up to 80km) Data Sheet Description The Avago Technologies AFCT-57V6USZ transceiver is a low-cost and hot-pluggable SFP MSA-compliant optical
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AFCT-57V6USZ
25GBd
AFCT-57V6USZ
AV02-0056EN
AFCT-57V6AUSZ
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21CFR(J) Class1
Abstract: AFCT-57V6AUSZ AFCT-57V6USZ SFF8472 AFCT-5715xZ SFP fiber optic pinout laser diode 1550 nm 2.5 Gbps
Text: AFCT-57V6USZ Small Form Factor Pluggable SFP LC Optical Transceiver for 1.25GBd Ethernet at Extended Link Lengths (Up to 80km) Data Sheet Description The Avago Technologies AFCT-57V6USZ transceiver is a low-cost and hot-pluggable SFP MSA-compliant optical
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AFCT-57V6USZ
25GBd
AFCT-57V6USZ
SFF-8472,
8B/10B
TIA/EIA-604-10,
AV02-0056EN
21CFR(J) Class1
AFCT-57V6AUSZ
SFF8472
AFCT-5715xZ
SFP fiber optic pinout
laser diode 1550 nm 2.5 Gbps
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IT 8517E
Abstract: 8517E induction cooker schematic diagram diode d.a.t.a. book objectives of automatic college bell induction cooker component list on pcb induction cooker circuit diagram ADE-410-002 Ultrasonic humidifier circuit Induction sealing machine circuit diagram
Text: To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003.
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AFCT-57V6NSZ
Abstract: No abstract text available
Text: AFCT-57V6NSZ Small Form Factor Pluggable SFP LC Optical Transceiver for 1.25GBd Ethernet at Extended Link Lengths (Up to 40km) Data Sheet Description The AFCT-57V6NSZ transceiver is a specially customised low-cost and hot-pluggable SFP MSA-compliant optical
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AFCT-57V6NSZ
25GBd
SFF-8472,
8B/10B
TIA/EIA-604-10,
AV01-0655EN
AV02-0620EN
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HP LED handbook
Abstract: Custom Luxeon Design Guide Luxeon driver schematic luxeon ds23 AB05 DS23 AB-06 AB06 thermal design considerations lumileds circuit diagram of a laser lighter
Text: application brief AB12 Custom Luxeon Design Guide The objective of this design guide is to provide customers with the technical resources necessary to identify custom Luxeon™ Power Light Sources for unique applications. A Luxeon Power Light Source is a configuration of Luxeon Light Emitting
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April2002)
HP LED handbook
Custom Luxeon Design Guide
Luxeon driver schematic
luxeon ds23
AB05
DS23
AB-06
AB06
thermal design considerations lumileds
circuit diagram of a laser lighter
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laser diode 670nm 40mW
Abstract: dvd writer laser "Hitachi Kodaira Semiconductor" low noise, 780nm, 5mw 650NM laser diode 5mw ADE-508-011E photo magneto electric hitachi laser diode HL6720G 650nm 5mw laser with collimator
Text: Information and Industry Laser Diodes Application Note ADE-508-011E Hitachi 5/14/01 Safety Considerations Be sure to avoid direct exposure of human eyes to high power laser beams emitted from laser diodes. Even though barely visible and/or invisible to the human
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ADE-508-011E
laser diode 670nm 40mW
dvd writer laser
"Hitachi Kodaira Semiconductor"
low noise, 780nm, 5mw
650NM laser diode 5mw
ADE-508-011E
photo magneto electric
hitachi laser diode
HL6720G
650nm 5mw laser with collimator
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KJE transistor
Abstract: thyristor control spot welding circuit thyristor lead acid battery charging thyristor control arc welding rectifier circuit FSM26L0336K* ffv range FSM26V0206K KJE 17 transistor elco capacitor 16 uf 450 -550 volt 100 kvar 480 volt 3 phase power factor capacitors FPG86Y0604J
Text: Medium Power Film Capacitors FFVE/FFVI Male and Female Connections GENERAL DESCRIPTION DC FILTERING The FFV capacitor is specifically designed for DC filtering, low reactive power. The series uses a non-impregnated metallized polypropylene or polyester dielectric, which
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S-CPEM5M806-C
KJE transistor
thyristor control spot welding circuit
thyristor lead acid battery charging
thyristor control arc welding rectifier circuit
FSM26L0336K* ffv range
FSM26V0206K
KJE 17 transistor
elco capacitor 16 uf 450 -550 volt
100 kvar 480 volt 3 phase power factor capacitors
FPG86Y0604J
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Thomson-CSF POLYESTER capacitors
Abstract: Thomson-CSF POLYESTER capacitors TPC thomson film capacitors .22 uf 400 volt ac capacitor thyristor control arc welding rectifier circuit thyristor control spot welding circuit KJE transistor mil-m-24519 FAV36B0804K capacitor snubber Polypropylene 1 uf
Text: A KYOCERA GROUP COMPANY AVX Medium Power Film Capacitors For Power Applications Contents MEDIUM POWER FILM CAPACITORS DC FILTERING FFB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
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5M505-C
Thomson-CSF POLYESTER capacitors
Thomson-CSF POLYESTER capacitors TPC
thomson film capacitors
.22 uf 400 volt ac capacitor
thyristor control arc welding rectifier circuit
thyristor control spot welding circuit
KJE transistor
mil-m-24519
FAV36B0804K
capacitor snubber Polypropylene 1 uf
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