U-CP-9850044
Abstract: No abstract text available
Text: U-CP-9850044 UNION OPTRONICS CORP. 980nm Laser Diode Chips 980nm Laser Diode Chips U-CP-9850044 •Specifications 1 Size : (2) Device: (3) Structure 300*300*100 m Laser diode bare chip Double channel , single ridge waveguide 300μm ■External dimensions(Unit : μm)
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U-CP-9850044
980nm
U-CP-9850044
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U-CP-80B0065
Abstract: diode laser 808nm 200mW TO-CAN 808nm 808nm laser diode laser diode bare chip laser diode 808nm
Text: U-CP-80B0065 UNION OPTRONICS CORP. 808nm Laser Diode Chips 808nm IR Laser Diode Chips U-CP-80B0065 •Specifications 1 Size : (2) Device: (3) Structure 300*500*100 m Laser diode bare chip Single ridge waveguide ■External dimensions(Unit : μm) 500μm
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U-CP-80B0065
808nm
U-CP-80B0065
diode laser 808nm 200mW
TO-CAN
808nm laser diode
laser diode bare chip
laser diode 808nm
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U-CP-80C0055-preliminary
Abstract: 808nm 300mw laser diode laser diode 300mw TO-CAN 808nm 300mW TO18 Laser 808nm 300 mw 808nm laser diode laser diode bare chip
Text: U-CP-80C0055-preliminary UNION OPTRONICS CORP. 808nm Laser Diode Chips 808nm IR Laser Diode Chips U-CP-80C0055-preliminary •Specifications 1 Size : (2) Device: (3) Structure 300*400*100 m Laser diode bare chip Single ridge waveguide ■External dimensions(Unit : μm)
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U-CP-80C0055-preliminary
808nm
886-3-g
U-CP-80C0055-preliminary
808nm 300mw laser diode
laser diode 300mw
TO-CAN
808nm 300mW
TO18 Laser 808nm 300 mw
808nm laser diode
laser diode bare chip
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TO18 Laser 808nm 300 mw
Abstract: IR Laser diode laser diode bare chip
Text: U-CP-80E0075-preliminary UNION OPTRONICS CORP. 808nm Laser Diode Chips 808nm IR Laser Diode Chips U-CP-80E0075-preliminary •Specifications 1 Size : (2) Device: (3) Structure 300*600*100 m Laser diode bare chip Single ridge waveguide ■External dimensions(Unit : μm)
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U-CP-80E0075-preliminary
808nm
886-3-g
TO18 Laser 808nm 300 mw
IR Laser diode
laser diode bare chip
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U-CP-6505001
Abstract: laser diode bare chip
Text: U-CP-6505001 UNION OPTRONICS CORP. 650nm Laser Diode Chips 650nm Red Laser Diode Chips U-CP-6505001 •Specifications 1 Size : (2) Device: (3) Structure: 200*250*100 m Laser diode bare chip Double channel , single ridge waveguide ■External dimensions(Unit : μm)
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U-CP-6505001
650nm
300um
100um
U-CP-6505001
laser diode bare chip
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laser diode bare chip
Abstract: No abstract text available
Text: U-CP-6505021 UNION OPTRONICS CORP. 650nm Laser Diode Chips 650nm Red Laser Diode Chips U-CP-6505021 •Specifications 1 Size : (2) Device: (3) Structure: 250*300*100 m Laser diode bare chip Double channel , single ridge waveguide ■External dimensions(Unit : μm)
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U-CP-6505021
650nm
laser diode bare chip
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U-CP-6505011
Abstract: 650nm 5mw laser 300um 650nm 5mw laser diode laser diode bare chip
Text: U-CP-6505011 UNION OPTRONICS CORP. 650nm Laser Diode Chips 650nm Red Laser Diode Chips U-CP-6505011 •Specifications 1 Size : (2) Device: (3) Structure: 250*250*100 m Laser diode bare chip Double channel , single ridge waveguide ■External dimensions(Unit : μm)
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U-CP-6505011
650nm
300um
100um
U-CP-6505011
650nm 5mw laser
300um
650nm 5mw laser diode
laser diode bare chip
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TO18 Laser 808nm 300 mw
Abstract: 808nm laser diode diode laser 808nm 200mW 808nm pad to18 Laser Diode 250mW p1875mw laser diode bare chip
Text: SLD-808-P200-C-03 UNION OPTRONICS CORP. 808nm Laser Diode Chips 808nm IR Laser Diode Chips SLD-808-P200-C-03 •Specifications 1 Size : (2) Device: (3) Structure 500*300*100 m Laser diode bare chip Single ridge waveguide ■External dimensions(Unit : μm)
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SLD-808-P200-C-03
808nm
886-3-485ard
200mW
250mW
125mW
TO18 Laser 808nm 300 mw
808nm laser diode
diode laser 808nm 200mW
pad to18
Laser Diode 250mW
p1875mw
laser diode bare chip
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Laser Diode 808 300 mw
Abstract: No abstract text available
Text: SLD-808-P200-C-04 UNION OPTRONICS CORP. 808nm Laser Diode Chips 808nm IR Laser Diode Chips SLD-808-P200-C-04 •Specifications 1 Size : (2) Device: (3) Structure 500*300*100 m Laser diode bare chip Single ridge waveguide ■External dimensions(Unit : μm)
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SLD-808-P200-C-04
808nm
886-3-485-268in
Laser Diode 808 300 mw
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650nm 5mw laser diode
Abstract: No abstract text available
Text: U-CP-6505131 UNION OPTRONICS CORP. 650nm Laser Diode Chips 650nm Red Laser Diode Chips U-CP-6505131 •Specifications 1 Size : (2) Device: (3) Structure: 300*250*100 m Laser diode bare chip Strained MQW and Multi-step MOCVD growth μm ■External dimensions(Unit : μm)
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U-CP-6505131
650nm
650nm 5mw laser diode
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X100M
Abstract: laser diode bare chip
Text: SLD-980-P50-C-300-03 UNION OPTRONICS CORP. 980nm Laser Diode chips 980nm Laser Diode Chips SLD-980-P50-C-300-02 size :300*300 m Specifications Device Laser Diode Bare Chip Structure Double Channel , Single Ridge Waveguide 300µ m •External dimensions Unit : μm
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SLD-980-P50-C-300-03
980nm
SLD-980-P50-C-300-02
x300m
x100m
laser diode bare chip
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635-P5-C-N-RG-300-02
Abstract: SLD-635-P5-C-N-RG-300-02 laser diode 635 nm laser diode chip 635nm 635nm laser diode bare chip
Text: 635-P5-C-N-RG-300-02 UNION OPTRONICS CORP. 635nm Laser Diode chips 635nm Red Laser Diode Chips SLD-635-P5-C-N-RG-300-02 size : 300*300um Specifications Device Laser Diode Bare Chip Structure Multi-step growth •External dimensions Units : um P-electrode
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635-P5-C-N-RG-300-02
635nm
SLD-635-P5-C-N-RG-300-02
300um
500um
100um
886-3-475-437e
635-P5-C-N-RG-300-02
SLD-635-P5-C-N-RG-300-02
laser diode 635 nm
laser diode chip 635nm
laser diode bare chip
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SLD-980-P50-C-300-05
Abstract: ridge waveguide semiconductor laser laser diode 980nm
Text: SLD-980-P50-C-300-05 UNION OPTRONICS CORP. 980nm Laser Diode Chips 980nm Laser Diode Chips SLD-980-P50-C-300-05 •Specifications 1 Size : (2) Device: (3) Structure 300*300*100 m Laser diode bare chip Double channel , single ridge waveguide 300µm ■External dimensions(Unit : μm)
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SLD-980-P50-C-300-05
980nm
SLD-980-P50-C-300-05
ridge waveguide semiconductor laser
laser diode 980nm
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Untitled
Abstract: No abstract text available
Text: SLD-980-P50-C-300-04 UNION OPTRONICS CORP. 980nm Laser Diode Chips 980nm Laser Diode Chips SLD-980-P50-C-300-04 •Specifications 1 Size : (2) Device: (3) Structure 300*300*100µm Laser diode bare chip Double channel , single ridge waveguide 300µm ■External dimensions(Unit : m)
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SLD-980-P50-C-300-04
980nm
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650NM laser diode 5mw
Abstract: DVD laser U-CP-6505142 laser diode DVD DVD diode 300 mW dvd pulse laser diode DVD laser assembly Laser Diode for dvd laser diode bare chip dvd laser diode
Text: U-CP-6505142 UNION OPTRONICS CORP. 650nm Laser Diode chips for DVD 650nm Red Laser Diode Chips for DVD U-CP-6505142 •Specifications 1 Size : (2) Device: (3) Structure: 300*300*100 m DVD Laser diode bare chip Strained MQW and Multi-step MOCVD growth ■External dimensions(Unit : μm)
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U-CP-6505142
650nm
2008/in
650NM laser diode 5mw
DVD laser
U-CP-6505142
laser diode DVD
DVD diode 300 mW
dvd pulse laser diode
DVD laser assembly
Laser Diode for dvd
laser diode bare chip
dvd laser diode
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laser diode bare chip
Abstract: laser diode chip 635nm
Text: SLD-635-P5-C-N-RG-300-04 UNION OPTRONICS CORP. 635nm Laser Diode Chips 635nm Red Laser Diode Chips SLD-635-P5-C-N-RG-300-04 •Specifications 1 Size : (2) Device: (3) Structure: 300*300*100µm Laser diode bare chip Multi-step growth ■External dimensions(Unit : m)
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SLD-635-P5-C-N-RG-300-04
635nm
laser diode bare chip
laser diode chip 635nm
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10g DFB
Abstract: dfb 10g dfb laser 1300 nm bare die DFB 1300 rise time laser diode bare chip DFB laser bare die
Text: PRELIMINARY DATASHEET | MAY 21, 2004 Uncooled 4 Gb/s CWDM DFB Bare Die The 4 Gb/s CWDM DFB laser diode chip is designed to facilitate extended temperature operation. Target applications include LX4 transceivers, SONET OC-48, and SDH STM-16. Performance Highlights
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OC-48,
STM-16.
OC-48
STM-16
10g DFB
dfb 10g
dfb laser 1300 nm
bare die
DFB 1300 rise time
laser diode bare chip
DFB laser bare die
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10g DFB
Abstract: 10 gb laser diode 1310 nm dfb 10g 10G bare die DFB TO 10DFB ca 91803
Text: PRELIMINARY DATASHEET | MAY 5, 2004 Uncooled 10 Gb/s 1310 nm DFB Bare Die The 10 Gb/s 1310 nm DFB laser diode chip is designed to facilitate extended temperature operation. Target applications include SONET OC-192, SDH STM-64, 10 Gigabit Ethernet, 10G Fibre Channel, and
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OC-192,
STM-64,
10GBASE-L
OC-192
STM-64
10g DFB
10 gb laser diode 1310 nm
dfb 10g
10G bare die
DFB TO
10DFB
ca 91803
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10 gb laser diode 1310 nm
Abstract: laser diode bare chip DFB laser bare die sdh markings bare die
Text: PRELIMINARY DATASHEET | MAY 14, 2004 Uncooled 2.5 Gb/s 1310 nm DFB Bare Die The 2.5 Gb/s 1310 nm DFB laser diode chip is designed to facilitate extended temperature operation. Target applications include SONET OC-48, SDH STM-16, Gigabit Ethernet, and fiber optic sensors.
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OC-48,
STM-16,
OC-48
STM-16
10 gb laser diode 1310 nm
laser diode bare chip
DFB laser bare die
sdh markings
bare die
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Laser diode Fabry-Perot
Abstract: FP 1310 2.5G TO
Text: PRELIMINARY DATASHEET | MAY 14, 2004 Uncooled 2.5 Gb/s 1310 nm Fabry-Perot Bare Die The 2.5 Gb/s 1310 nm Fabry-Perot laser diode chip is designed to facilitate extended temperature operation. Target applications include SONET OC-48, SDH STM-16, Gigabit Ethernet, and fiber optic sensors.
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OC-48,
STM-16,
OC-48
STM-16
Laser diode Fabry-Perot
FP 1310 2.5G TO
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Untitled
Abstract: No abstract text available
Text: Single Angled Facet SAF Laser Diode 1550 nm semiconductor gain chip (Preliminary) DESCRIPTION Quantum Photonics’ Single Angled Facet (SAF) gain chip is based on high-power InP ridge waveguide laser diode technology. Laser cavity oscillation is prevented by active waveguide engineering to produce a front angled facet which in combination with antireflection coating ensures a broadband low facet reflectivity. Optional mode transformers monolithically incorporated at the facets
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Laser Diode 1550 nm
Abstract: Fabry-Perot 1550 nm Quantum Photonics Single Angled Facet SAF Laser Diode 1550 nm semiconductor gain chip laser diode bare chip 1550 Laser InP tunable lasers diode applications Fabry-Perot-Laser-Diode 1550 laser diode Laser diode Fabry-Perot
Text: Single Angled Facet SAF Laser Diode 1550 nm semiconductor gain chip (Preliminary) DESCRIPTION Quantum Photonics’ Single Angled Facet (SAF) gain chip is based on high-power InP ridge waveguide laser diode technology. Laser cavity oscillation is prevented by active waveguide engineering to produce a front angled facet which in combination with antireflection coating ensures a broadband low facet reflectivity. Optional mode transformers monolithically incorporated at the facets
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Germanium PIN laser diode
Abstract: receiver pin diode for 10Gbps silicon diode and germanium tunable lasers diode applications 3.3v laser diode stm 64 APD 10gbps Germanium Power Diodes laser driver, STM-64 bare die FOA3251B1
Text: High Speed Communication ICs Product Overview Function Transceiver Functions: Part Number Clock and Data Recovery FOA3251B1 Clock and Data Recovery FOA3100xB1 MUX/CMU FOA4100xB1 MUX/CMU FOA4400xA DEMUX/CDR FOA5100xB1 DEMUX/CDR FOA5400xA Ø MUX/CMU Ø DEMUX/CDR
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FOA3251B1
FOA3100xB1
FOA4100xB1
FOA4400xA
FOA5100xB1
FOA5400xA
10Gbps
OC-192/
STM-64
10Gbps
Germanium PIN laser diode
receiver pin diode for 10Gbps
silicon diode and germanium
tunable lasers diode applications
3.3v laser diode stm 64
APD 10gbps
Germanium Power Diodes
laser driver, STM-64
bare die
FOA3251B1
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Untitled
Abstract: No abstract text available
Text: VITESSE SEMICONDUCTOR CORPORATION Target Specification SONET/SDH 10.7Gb/s Laser Diode Driver VSC7990 Features • Typical Rise Times of 25ps • Direct Access to Modulation and Bias FETs • On-chip Reclocking Register • On-chip Mux for Selectable Clocked or Nonclocked Applications
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VSC7990
100mA
VSC7990
G52303-0,
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