Untitled
Abstract: No abstract text available
Text: Laser Diodes 660 nm ~ 690 nm HHL Window Packaged Laser Diode BLD-66-10-1W-10-W BLD-68-10-1W-10-W BLD-67-10-1W-10-W BLD-69-10-1W-10-W High Power Laser Diode Modules are manufactured by adopting specialized fibercoupling techniques, resulting in volume products with a high efficiency, stability and
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BLD-66-10-1W-10-W
BLD-68-10-1W-10-W
BLD-67-10-1W-10-W
BLD-69-10-1W-10-W
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Untitled
Abstract: No abstract text available
Text: DATASHEET Photon Detection C86155E-10 Quasi-Continuous-Wave 980 nm Laser Diode The C86155E-10 high energy fiber pigtailed Quasi-Continuous-Wave Quasi-CW Laser Diode has been designed specifically to meet the demanding requirements of Laser Initiated Ordnance (LIO) applications.
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C86155E-10
C86155E-10
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NX8346
Abstract: No abstract text available
Text: LASER DIODE NX8346TS 1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s APPLICATION DESCRIPTION The NX8346TS is a 1 310 nm Multiple Quantum Well MQW structured Distributed Feed-Back (DFB) laser diode TOSA (transmitter optical subassembly) with InGaAs monitor PIN-PD in a receptacle type package
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NX8346TS
NX8346TS
PL10723EJ01V0DS
NX8346
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nec 2702
Abstract: 2702 NEC NX8341 NX8341UH NX8341UJ NX8341UL NX8341TB-AZ 10 gb laser diode 5PIN g 995
Text: LASER DIODE NX8341 Series 1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s APPLICATION DESCRIPTION The NX8341 Series is a 1 310 nm Multiple Quantum Well MQW structured Distributed Feed-Back (DFB) laser diode TOSA (transmitter optical subassembly) with InGaAs monitor PIN-PD in a receptacle type package
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NX8341
PL10525EJ03V0DS
nec 2702
2702 NEC
NX8341UH
NX8341UJ
NX8341UL
NX8341TB-AZ
10 gb laser diode
5PIN
g 995
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NX8341
Abstract: NX8341UH NX8341UJ NX8341UL NX8341UN 10 gb laser diode NX8341UJ-AZ
Text: LASER DIODE NX8341 Series 1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s APPLICATION DESCRIPTION The NX8341 Series is a 1 310 nm Multiple Quantum Well MQW structured Distributed Feed-Back (DFB) laser diode TOSA (transmitter optical subassembly) with InGaAs monitor PIN-PD in a receptacle type package
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NX8341
PL10525EJ02V0DS
NX8341UH
NX8341UJ
NX8341UL
NX8341UN
10 gb laser diode
NX8341UJ-AZ
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TOSA pcb
Abstract: No abstract text available
Text: LASER DIODE NX8346TB,NX8346TY 1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s APPLICATION DESCRIPTION The NX8346TB and NX8346TY are 1 310 nm Multiple Quantum Wells MQW structured Distributed Feed-Back (DFB) laser diode TOSA (transmitter optical subassembly) with InGaAs monitor PIN-PD in a receptacle type
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NX8346TB
NX8346TY
NX8346TY
OC-192
PL10722EJ01V0DS
TOSA pcb
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NEC DIODE LASER
Abstract: No abstract text available
Text: DATA SHEET LASER DIODE NX8346TS 1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s APPLICATION DESCRIPTION The NX8346TS is a 1 310 nm Multiple Quantum Well MQW structured Distributed Feed-Back (DFB) laser diode TOSA (transmitter optical subassembly) with InGaAs monitor PIN-PD in a receptacle type package
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NX8346TS
NX8346TS
NEC DIODE LASER
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Untitled
Abstract: No abstract text available
Text: Preliminary Data Sheet NX8349YK LASER DIODE 1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s APPLICATION R08DS0118EJ0100 Rev.1.00 Dec 13, 2013 DESCRIPTION The NX8349YK is 1 310 nm Multiple Quantum Wells MQW structured Distributed Feed-Back (DFB) laser diode
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NX8349YK
R08DS0118EJ0100
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R08DS0118EJ0100
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NX8341UH
Abstract: 10 gb laser diode nec 2702 NX8341 NX8341UN PX10160E
Text: PRELIMINARY DATA SHEET LASER DIODE NX8341 Series 1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s APPLICATION DESCRIPTION The NX8341 Series is a 1 310 nm Multiple Quantum Well MQW structured Distributed Feed-Back (DFB) laser diode TOSA (transmitter optical
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NX8341
NX8341UH
NX8341UN
NX8341UH
10 gb laser diode
nec 2702
NX8341UN
PX10160E
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Untitled
Abstract: No abstract text available
Text: DATA SHEET LASER DIODE NX8346TB,NX8346TY 1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s APPLICATION DESCRIPTION The NX8346TB and NX8346TY are 1 310 nm Multiple Quantum Wells MQW structured Distributed Feed-Back (DFB) laser diode TOSA (transmitter optical subassembly) with InGaAs monitor PIN-PD in a receptacle type
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NX8346TB
NX8346TY
NX8346TY
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NX8341UJ
Abstract: NX8341 NX8341UH NX8341UL NX8341UN 6R01 10 gb laser diode NX8341TB
Text: DATA SHEET LASER DIODE NX8341 Series 1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s APPLICATION DESCRIPTION The NX8341 Series is a 1 310 nm Multiple Quantum Well MQW structured Distributed Feed-Back (DFB) laser diode TOSA (transmitter optical subassembly) with InGaAs monitor PIN-PD in a receptacle type package
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NX8341
NX8341UJ
NX8341UH
NX8341UL
NX8341UN
6R01
10 gb laser diode
NX8341TB
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Untitled
Abstract: No abstract text available
Text: Preliminary Data Sheet NX6414EH LASER DIODE 1 490 nm InGaAsP MQW-DFB LASER DIODE FOR GIGABIT ETHERNET AND Point to Point APPLICATION R08DS0042EJ0100 Rev.1.00 Jun 10, 2011 DESCRIPTION The NX6414EH is a 1 490 nm Multiple Quantum Well MQW structured Distributed Feed-Back (DFB) laser diode with InGaAs monitor PIN-PD.
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NX6414EH
R08DS0042EJ0100
NX6414EH
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nec 2702
Abstract: nec 2702 K
Text: DATA SHEET LASER DIODE NX8341 Series 1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s APPLICATION DESCRIPTION The NX8341 Series is a 1 310 nm Multiple Quantum Well MQW structured Distributed Feed-Back (DFB) laser diode TOSA (transmitter optical subassembly) with InGaAs monitor PIN-PD in a receptacle type package
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NX8341
nec 2702
nec 2702 K
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Untitled
Abstract: No abstract text available
Text: Preliminary Data Sheet NX6342EP LASER DIODE 1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s BASE-LR/LW APPLICATION R08DS0050EJ0100 Rev.1.00 Jan 19, 2012 DESCRIPTION The NX6342EP is a 1 310 nm Multiple Quantum Well MQW structured Distributed Feed-Back (DFB) laser diode with InGaAs monitor PIN-PD.
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NX6342EP
NX6342EP
R08DS0050EJ0100
IEEE802
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Untitled
Abstract: No abstract text available
Text: DATA SHEET LASER DIODE NX8341,NX8343,NX8344 Series 1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s APPLICATION DESCRIPTION The NX8341, NX8343, and NX8344 Series are 1 310 nm Multiple Quantum Wells MQW structured Distributed Feed-Back (DFB) laser diode TOSA
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NX8341
NX8343
NX8344
NX8341,
NX8343,
OC-192
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Untitled
Abstract: No abstract text available
Text: Preliminary Data Sheet NX8369TS LASER DIODE 1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s APPLICATION R08DS0044EJ0100 Rev.1.00 Jun 06, 2011 DESCRIPTION The NX8369TS is a 1 310 nm Multiple Quantum Well MQW structured Distributed Feed-Back (DFB) laser diode
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NX8369TS
R08DS0044EJ0100
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10 gb laser diode
Abstract: PX10160E
Text: Preliminary Data Sheet NX8349TB LASER DIODE 1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s APPLICATION R08DS0001EJ0100 Rev.1.00 Jul 26, 2010 DESCRIPTION The NX8349TB is a 1 310 nm Multiple Quantum Well MQW structured Distributed Feed-Back (DFB) laser diode
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NX8349TB
R08DS0001EJ0100
NX8349TB
OC-192
R08DS0001EJ0100
10 gb laser diode
PX10160E
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Untitled
Abstract: No abstract text available
Text: Preliminary Data Sheet NX8369TB LASER DIODE 1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s APPLICATION R08DS0043EJ0100 Rev.1.00 Jun 06, 2011 DESCRIPTION The NX8369TB is a 1 310 nm Multiple Quantum Well MQW structured Distributed Feed-Back (DFB) laser diode
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R08DS0043EJ0100
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Untitled
Abstract: No abstract text available
Text: Preliminary Data Sheet NX8349TS LASER DIODE 1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s APPLICATION R08DS0002EJ0200 Rev.2.00 Dec 13, 2013 DESCRIPTION <R> The NX8349TS is 1 310 nm Multiple Quantum Wells MQW structured Distributed Feed-Back (DFB) laser diode
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NX8349TS
R08DS0002EJ0200
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Untitled
Abstract: No abstract text available
Text: DATA SHEET VISIBLE LASER DIODE NDL3215 10 mW 670 nm LONG RANGE BAR CODE READER, MEASUREMENT APPLICATION AIGalnP DOUBLE HETEROSTRUCTURE VISIBLE LASER DIODE DESCRIPTION NDL3215 is an AIGalnP 670 nm visible laser diode and especially developed fo r Long Range Bar Code Reader,
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NDL3215
NDL3215
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TOLD9442M
Abstract: laser diode toshiba 650
Text: TOLD9442M TOSHIBA TOSHIBA LASER DAIODE InGaAlP TOLD9442M Lasing Wavelength : = 650 nm Typ. Optical Output Power : P0 = 5 mW Operation Case Temperature : Tc = —10~60°C Pin Connection 10 0 3 LD 0 @ PD I 1. LASER DIODE CATHODE 2. LASER DIODE ANODE PHOTODIODE CATHODE
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OLD9442M
TOLD9442M
laser diode toshiba 650
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laser diode toshiba
Abstract: TOLD9231M 670NM Laser-Diode told daiode
Text: TOLD9231M TOSHIBA TOSHIBA LASER DAIODE InGaAlP TOLD9231M Lasing Wavelength : Ap = 670nm Typ. Optical Output Power : P0 = 5mW Operation Case Temperature : T e = —10~60°C Pin Connection 10 0 3 LD 0 @ PD I 1. LASER DIODE CATHODE 2. LASER DIODE ANODE PHOTODIODE CATHODE
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OLD9231M
670nm
15-4A1
laser diode toshiba
TOLD9231M
670NM Laser-Diode
told
daiode
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laser diode toshiba
Abstract: told laser diode toshiba 650 650nm 5mw laser diode 650NM laser diode 5mw
Text: TOLD9441 MD TOSHIBA TOSHIBA LASER DAIODE InGaAlP TOLD9441 MD Lasing Wavelength : Ap = 650nm Typ. Optical Output Power : P0 = 5mW Operation Case Temperature : T e = —10~70°C Pin Connection 10 0 3 LD 0 @ PD I 1. LASER DIODE ANODE 2. LASER DIODE CATHODE
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OLD9441
650nm
15-4A1
646nm
651nm
656nm
10kHz,
500MHz)
laser diode toshiba
told
laser diode toshiba 650
650nm 5mw laser diode
650NM laser diode 5mw
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laser diode toshiba
Abstract: told 2 Wavelength Laser Diode 670NM Laser-Diode laser diode 670nm Shibaura
Text: TOLD9221M TOSHIBA TOSHIBA LASER DAIODE InGaAlP TOLD9221M Lasing Wavelength : Ap = 670nm Typ. Optical Output Power : P0 = 5mW Operation Case Temperature : T e = —10~60°C Pin Connection 10 LD 0 0 3 I @ PD 1. LASER DIODE CATHODE 2. LASER DIODE ANODE PHOTODIODE CATHODE
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OLD9221M
670nm
15-4A1
laser diode toshiba
told
2 Wavelength Laser Diode
670NM Laser-Diode
laser diode 670nm
Shibaura
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