Untitled
Abstract: No abstract text available
Text: Current Transducer LA 55-P For the electronic measurement of currents: DC, AC, pulsed., with galvanic isolation between the primary circuit high power and the secondary circuit (electronic circuit). IPN = 50 A 16019 Electrical data Primary nominal current rms
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Untitled
Abstract: No abstract text available
Text: Current Transducer LA 55-P/SP23 For the electronic measurement of currents: DC, AC, pulsed., with galvanic isolation between the primary circuit high power and the secondary circuit (electronic circuit). IPN = 50 A 16024 EleWctrical data Primary nominal current rms
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55-P/SP23
-P/SP23
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lem LA 55-P application
Abstract: LEM module LA 50-P
Text: Current Transducer LA 55-P For the electronic measurement of currents: DC, AC, pulsed., with galvanic isolation between the primary circuit high power and the secondary circuit (electronic circuit). IPN = 50 A 16019 Electrical data IPN Primary nominal current rms
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current transducer la 55-p
Abstract: lem LA 55-P application LA 55-P application lem la 50 p lem la 55 p
Text: IPN Current Transducer LA 55-P = 50 A For the electronic measurement of currents : DC, AC, pulsed., with a galvanic isolation between the primary circuit high power and the secondary circuit (electronic circuit). 16019 Electrical data IPN IPM RM Primary nominal current rms
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LA 55-P/SP1
Abstract: LA 55-P Hall effect 215 DB lem LA 55-P LA+55-P/SP1
Text: Current Transducer LA 55-P/SP1 IPN = 50 A For the electronic measurement of currents : DC, AC, pulsed., with a galvanic isolation between the primary circuit high power and the secondary circuit (electronic circuit). Electrical data IPN IP RM Primary nominal r.m.s. current
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55-P/SP1
LA 55-P/SP1
LA 55-P
Hall effect 215 DB
lem LA 55-P
LA+55-P/SP1
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lem la 50 p
Abstract: LA 55-P lem la 55 p current transducer la 55-p lem current LEM Components lem current La 55-P lem LA 55-P application LA 55-P application
Text: IPN Current Transducer LA 55-P = 50 A For the electronic measurement of currents: DC, AC, pulsed., with a galvanic isolation between the primary circuit high power and the secondary circuit (electronic circuit). 16019 Electrical data IPN IPM RM Primary nominal current rms
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LA 55-P
Abstract: lem la 55 p current transducer la 55-p
Text: Current Transducer LA 55-P IPN = 50 A For the electronic measurement of currents : DC, AC, pulsed., with a galvanic isolation between the primary circuit high power and the secondary circuit (electronic circuit). Electrical data IPN IP RM Primary nominal r.m.s. current
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lem la 50 p
Abstract: lem current La 55-P LA 55-P current transducer la 55-p lem la 55 p
Text: Current Transducer LA 55-P/SP33 IPN = 50 A For the electronic measurement of currents : DC, AC, pulsed., with a galvanic isolation between the primary circuit high power and the secondary circuit (electronic circuit). Electrical data IPN IP RM Primary nominal r.m.s. current
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55-P/SP33
330ection
lem la 50 p
lem current La 55-P
LA 55-P
current transducer la 55-p
lem la 55 p
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current transducer la 55-p
Abstract: LA 55-P lem LA 55-P 8518g
Text: Current Transducer LA 55-P IPN = 50 A For the electronic measurement of currents : DC, AC, pulsed., with a galvanic isolation between the primary circuit high power and the secondary circuit (electronic circuit). Electrical data IPN IP RM Primary nominal r.m.s. current
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lem LA 55-P
Abstract: No abstract text available
Text: Current Transducer LA 55-P/SP1 IPN = 50 A For the electronic measurement of currents : DC, AC, pulsed., with a galvanic isolation between the primary circuit high power and the secondary circuit (electronic circuit). 16024 Electrical data IPN IP RM Primary nominal r.m.s. current
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55-P/SP1
lem LA 55-P
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MLB-3216S-0300M4E
Abstract: MLB-3216S-0120M4D MLB-3216S-1000M4A MLB-3216S-0060M4F
Text: M U LT I LA Y E R T Y P E • • • • • • MULTILAYER 4 LINE CHIP ARRAY FERRITE CHIP BEAD Impedance Range: 60 to 1000 Ω. Operating Temperature Range: -55°C to +125°C. Soldering Method: Reflow or Wave Soldering, suitable for lead free soldering.
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cMLB-3216S-0060M4F
MLB-3216S-0120M4D
MLB-3216S-0300M4E
MLB-3216S-0600M4C
MLB-3216S-1000M4A
MLB-3216S-0060M4F
MLB-3216S-1000M44A
MLB-3216S-0300M4E
MLB-3216S-0120M4D
MLB-3216S-1000M4A
MLB-3216S-0060M4F
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MLB-160808-1000AC
Abstract: MLB-201209-0600AH MLB-201209-2200AE MLB-100505-0300AE MLB-201209-0090AI MLB-321611-0800AE MLB-100505-0060AF MLB-321611-0150AH MLB-160808-0120AG MLB-201209-0300
Text: M U LT I LA Y E R T Y P E • • • • • • MULTILAYER FERRITE CHIP BEAD Impedance Range: 7 to 2000 Ω. Operating Temperature Range: -55°C to +125°C. Soldering Method: Reflow or Wave Soldering, suitable for lead free soldering. Packaging Method: Tape & Reel per EIA Specifications .
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MLB-321611-0019AI,
-0026AI,
-0031AI,
-0050AI,
-0070AI
MLB-321611-0090AH,
-0120AH,
-0150AH,
-0200AH,
-0220AH,
MLB-160808-1000AC
MLB-201209-0600AH
MLB-201209-2200AE
MLB-100505-0300AE
MLB-201209-0090AI
MLB-321611-0800AE
MLB-100505-0060AF
MLB-321611-0150AH
MLB-160808-0120AG
MLB-201209-0300
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MLB-201209-0300
Abstract: MLB2012090600PN MLB-321611-0120PW MLB-321611-0600PP MLB-201209-0300PN MLB2012090120 INDUCTOR CHIP FERRITE BEAD 0805 MLB-321611 MLB-321611-0060PQ MLB-201209-0120PU
Text: M U LT I LA Y E R T Y P E MULTILAYER HIGH CURRENT FERRITE CHIP BEAD • • • • • • Impedance Range: 30 to 1300 Ω. Operating Temperature Range: -55°C to +125°C. Soldering Method: Reflow or Wave Soldering, suitable for lead free soldering. Packaging Method: Tape & Reel per EIA Specifications .
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MLB-321611-0075PQ
MLB-321611-0080PR
MLB-321611-0090PQ
MLB-321611-0120PW
MLB-321611-0150PN
MLB-321611-0500PP
MLB-321611-0600PP
MLB-321611-1200PL
MLB-322513-0060PM
MLB-322513-1000PN
MLB-201209-0300
MLB2012090600PN
MLB-321611-0120PW
MLB-321611-0600PP
MLB-201209-0300PN
MLB2012090120
INDUCTOR CHIP FERRITE BEAD 0805
MLB-321611
MLB-321611-0060PQ
MLB-201209-0120PU
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D-63110
Abstract: MLB-201209-0300 kitagawa KE 31 MLB-321611-0120PW MLB-321611-0090PQ MLB-201209-0011PW MLB451616 MLB160808 MLB-201209-0040PR
Text: M U LT I LA Y E R T Y P E MULTILAYER HIGH CURRENT FERRITE CHIP BEAD • • • • • • Impedance Range: 30 to 1300 Ω. Operating Temperature Range: -55°C to +125°C. Soldering Method: Reflow or Wave Soldering, suitable for lead free soldering. Packaging Method: Tape & Reel per EIA Specifications .
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Rat6-0080PW
D-63110
MLB-451616-0470PN
MLB-451616-0850PM
MLB-453215-0080PW
MLB-453215-0120PW
MLB-453215-0150PW
MLB-453215-0600PQ
MLB-453215-0680PQ
MLB-201209-0300
kitagawa
KE 31
MLB-321611-0120PW
MLB-321611-0090PQ
MLB-201209-0011PW
MLB451616
MLB160808
MLB-201209-0040PR
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2N4126
Abstract: No abstract text available
Text: 2N4126 PNP S ilico n E p itaxial T ransistor for switching and amplifier applications. Especially suit able for AF-driver and low-power output stages. As complementary type, the NPN transistor 2N4124 is recommended. max. 0 0 55 2.5 B TO-92 P la stic Package
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2N4126
2N4124
2N4126
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NE5554N
Abstract: NE5553N ne5553 NE5552 NE5555N NE5555 CI NE5551N ne5554 NE55S TE 555-1
Text: O B JE C T IV E S P E C IF IC A T IO N N E /S E 55 51/2 /3/4 /5-N .T DESCRIPTION FEATURES The N E /SE 5551, 2, 3, 4, 5 are dual p o la rity tra c k in g re g u la to rs desig ned to p ro d u c e balanced o r un balanced o u tp u t voltages fro m 5 to 20 volts w ith up to 300 m A o u tp u t
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78MXX
79MXX
NE5554N
NE5553N
ne5553
NE5552
NE5555N
NE5555
CI NE5551N
ne5554
NE55S
TE 555-1
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B57085M472K
Abstract: B57085-M104-K B57085M473K B57085M104K m85 ntc
Text: _ NTC Thermistors Miniature sensor for measuring and controt applications fg »¿n»- j G la s s c a se , h e rm e tic a lly s e a le d T e m p e ra tu re ra n g e R a te d te m p e ra tu re - 55 'C + 25 C §! . * ?00 ^ C r -* Type Ordering code Max qty Min
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M85/100
B57085-M472-K
B57085-M103-K
B57085-M473-K
B57085-M104-K
B57085M472K
B57085M473K
B57085M104K
m85 ntc
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lv 8013
Abstract: ITAR B945 "network interface cards"
Text: ff?/31/95 09‘.34'.55 40B-943-ZB43-> CYPRESS • Compile* with IEEE B02Jn draft standard • Three operating n ode« — 100BASE-T4 — 10BASE-T Full D n p la — 10BASE-T • Media Independent Interface Mil — Three-state receive port — Serial management port
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40B-943-ZB43->
1603B00193Z
B02Jn
100BASE-T4
10BASE-T
10BASE-T
CY7C971
100BASE-T4/10BASE-T
CY7C971
40fl-943-ZB43->
lv 8013
ITAR
B945
"network interface cards"
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Untitled
Abstract: No abstract text available
Text: 3SE D SIPEX CORP 0 5 03 7 1 1 GQÜ2ÖSÖ g Ö S P X p; SIGNALPROCESSMGÉXCOLENCE & K Military DC/DC Converter Features • ■ ■ ■ ■ ■ ■ G re a te r Than 37W /inch^ Pow er Density O p eratio n from -55°C to +125°C b a s e p la te Full Pow er O u tp u t a t +125°C
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100MQ
MIL-STD-704D
16-50VD
MIL-STD-883,
SP2805
28Vdc
SP2805
DS/SP2805/9011/2
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Untitled
Abstract: No abstract text available
Text: WORKSTATION OUTLETS Surface Mount O utlet D ual S C to S C A da pter, B la ck SC 55 8318-1 558319-1 D ual S C to S C A da pter, B lue SC S in g le FD D I F S D -to -S T -S ty le A d a p te r S key 55 7351-1 557365-1 557995-1 D ual FD D I F S D -to -S T -S ty le A d a p te r (A /B key)
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110-style
T568A
T568B
558036-X
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MHW 254
Abstract: motorola mhw
Text: MOTOROLA Order this document by MHW6205/D SEMICONDUCTOR TECHNICAL DATA M HW 6205 M HW 6225 The RF Line High Output Pow er Doubler 55 0 MHz CATV Am plifiers M o to r o la P re fe rre d D e v ic e s Designed specifically for 550 MHz CATV applications. Features ion-implanted, arsenic emitter transistors with an all gold metallization system.
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MHW6205/D
MHW6205)
MHW6225)
2PHX33743P-0
6205/D
MHW 254
motorola mhw
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74125 ic
Abstract: 74129
Text: /Inaren Double-Balanced Mixers, High Isolation, Miniature Features Applications U p to 55 dB iso la tio n W ide IF b a n d w id th M u lti-o c ta v e RF p e rfo rm a n c e H ig h in te rc e p t point L o w c o n v e rs io n loss M in ia tu re size W id e b a n d d o w n -c o n v e rto rs
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p1029
Abstract: SIEMENS BPY12h1 applications
Text: SIEMENS D io d e and s o ld e r p a d s A c tiv e B P Y 12 BPY 12 H 1 tsoQ6016 Silizium-PIN-Fotodiode Silicon-PIN-Photodiode la c q u e re d a re a L cs o I i n uS 5 .2 55 5 .0 50 Anode S tr a n d s ’ M a x. s o ld e r a re a s and back A p p ro x . on
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feo06697
BPY12
BPY12H1
p1029
SIEMENS BPY12h1 applications
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2N4351 MOTOROLA
Abstract: 3N170 3c169 DFM12 3N169
Text: MOTOROLA SC { D I O D E S / O P T O } 34 636 72 55 M O T O RO LA SC DIODES/OPTO DE|b3b755S CID3ÛD41 3^ c 38041 FIËLD-EFFECT TRANSISTORS DICE (continued) D T - JJT- Z - i 3C169 DIE NO. LINE SOURCE — DFM122 This die provides performance equal to or better than that of
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b3b755S
DFM122
2N4351
3N169
3N170
3N171
MMCS0122
3C169
2N4351 MOTOROLA
3c169
DFM12
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