DISPLAY 16 segmentos
Abstract: IRX800HFCT-B reles 12v DISPLAY DOBLE Metal Detector Robo RELE 12V 5 pines domopc CAB800PC 4193sn DOD800HF-B
Text: SECURITY & CUSTOM ELECTRONICS Catálogo intrusión 2006 HONEYWELL SECURITY & CUSTOM ELECTRONICS Bienvenidos Apreciados profesionales de la seguridad: Durante estos últimos años, Honeywell Security ha aumentado y confirmado considerablemente su experiencia en lo que respecta a
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4190SN
4193SN
4275EX-SN.
4278EX-SN.
4293SN
HSCE-CATAL-01-ES
DISPLAY 16 segmentos
IRX800HFCT-B
reles 12v
DISPLAY DOBLE
Metal Detector Robo
RELE 12V 5 pines
domopc
CAB800PC
4193sn
DOD800HF-B
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2322 641 26103
Abstract: No abstract text available
Text: IXITC T h e r m is t o r s for temperature sensing In su la te d leads S c re w N o n -in su la te d leads E n c a p s u la te d , lo n g P V C leads i t M o u ld ed f 1 lli III n S e rie s 2 3 2 2 . 6 4 0 7 . 6 4 5 2 0 . 64 5 1 0 . 2 3 2 2 641
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Tr431
Abstract: 1N1525 cs1256hg BSF17 dd04 18DB6A B1274 transistor 1N34A MP LT236 SN76
Text: I RJ 1 international, rectifier IR R e p la c e m ent P a rt No. 25710 25T12 « S ? S H fcx S yty P a rt No. IR R e p la c e m ent Z1012 Z1014 21016 Z1018 21020 AA138 AA140 AA142 AA2 AA20 IN34A IN34A JN34A TR-08 6F20D ZI022 Z1006 21008 7*0*0 21012 AA200
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25T12
Z1012
Z1014
Z1018
AA138
AA140
AA142
AA200
AA21Q
AA300
Tr431
1N1525
cs1256hg
BSF17
dd04
18DB6A
B1274 transistor
1N34A MP
LT236
SN76
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Zener diode 2.2X
Abstract: Phenom II MZ8.2T5 Zener Diode
Text: Raytheon Electronics Sem iconductor D ivision RC4190 M icropow er Sw itching Regulator Features • • • • • High efficiency - 85% typical Low quiescent current - 215 |lA Adjustable output - 1.3V to 30V High switch current - 200 mA Bandgap reference - 1.31V
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RC4190
7ST73bD
RC4190M
RC4190N
RM4190D
RM4190D/883B
RV4190N
Zener diode 2.2X
Phenom II
MZ8.2T5 Zener Diode
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BC847B MOTOROLA
Abstract: BCS48C
Text: M O T O R O LA Order this document by BC846AWT1/D SEMICONDUCTOR TECHNICAL DATA General Purpose TVansistors BC846AWT1 ,BWT1 BC847AWT1 ,BWT1, CWT1 BC848AWT1 ,BWT1, CWT1 NPN Silicon designed for low power surface mount applications. EMITTER MAXIMUM RATINGS Symbol
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BC846AWT1/D
BC846AWT1
BC847AWT1
BC848AWT1
BC846
BC847
BC848
OT-323/SC-70
2PHX34M7F-0
BC847B MOTOROLA
BCS48C
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ku 602 vc
Abstract: difference between bc856a bc856b
Text: M O TO R O LA Order this document by b c 8 5 6 a w ti/d SEMICONDUCTOR TECHNICAL DATA General Purpose TVansistors BC856AWT1 ,BWT1 BC857AWT1 ,BWT1 BC858AWT1 ,BW T1, CWT1 PNP Silicon designed for low power surface mount applications. Motorola Preferred Devices
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BC856AWT1
BC857AWT1
BC858AWT1
BC856
BC857
BC858
OT-323/SC-70
2PHX34990F-O
BC856AWT1/D
ku 602 vc
difference between bc856a bc856b
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Untitled
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Bias Resistor Transistor MUN5211T1 SERIES NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network M o to ro la Preferred D e v ic e s This new series of digital transistors is designed to replace a single device
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SC-70/SOT-323
MUN5211T1
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Untitled
Abstract: No abstract text available
Text: * DUAL DIFFERENTIAL SYNERGY CI°°*Works P E C L -to -T T LT R A N S LA TO R SY100ELT23 SEMICONDUCTOR DESCRIPTION FEATURES 3.0ns typical propagation delay The SY10/100ELT23 are dual differential PECL-to-TTL translators. Because PECL Positive ECL levels are
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SY100ELT23
500ps
SY10/100ELT23
ELT23
10ELT
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Untitled
Abstract: No abstract text available
Text: M O TO R O LA SEMICONDUCTOR TECHNICAL DATA 32K x 18 Bit BurstRAM Synchronous Fast Static RAM MCM67C518 With Burst Counter and Registered Outputs The MCM67C518 is a 589,824 bit synchronous static random access memory designed to provide a burstable, high-performance, secondary cache for the
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MCM67C518
i486TM
MCM67C518FN7s
67C518
518FN
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75Z21
Abstract: No abstract text available
Text: M O TORO LA SEMICONDUCTOR TECHNICAL DATA The RF Small Signal Line MRF927T1 NPN Silicon Low Voltage, Low Current, Low Noise, H igh-Frequency Transistors IC = 10 m A LO W NOISE HIGH FREQUENCY TRAN SISTOR Designed for use in low voltage, low current applications at frequencies to
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SC-70)
MRF927T1
SC-70/SQT-323)
RF927
MRF927
MRF927T1
75Z21
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Untitled
Abstract: No abstract text available
Text: V SYNERG Y DUAL TTL-to-DIFFERENTIAL p e c l tr a n s la to r SY10ELT22 SY100ELT22 SEMICONDUCTOR DESCRIPTION FEATURES The SY10/100ELT22 are dual TTL-to-differential PECL translators. Because PECL Positive ECL levels are used, only +5V and ground are required. The small
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SY10ELT22
SY100ELT22
SY10/100ELT22
ELT22
10ELT
100ELT
300ps
100ps
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1N 3980 A
Abstract: No abstract text available
Text: V SYNERGY D U A LTTL-tO -DIFFEREN TIAL p ecl tra n s la to r SY10ELT22 SY100ELT22 SEMICONDUCTOR DESCRIPTION FEATURES 300ps typical propagation delay The SY10/100ELT22 are dual TTL-to-differential PECL translators. Because PECL Positive ECL levels are used, only +5V and ground are required. The small
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SY10ELT22
SY100ELT22
300ps
100ps
SY10/100ELT22
ELT22
10ELT
1N 3980 A
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Marking J30 SOT23
Abstract: 4014C g0750
Text: M O TO R O LA O rder this docum ent by MMBD1010LT1/D SEMICONDUCTOR TECHNICAL DATA L G r e e n i n e MMBD1010LT1 MMBD2010T1 MMBD3010T1 Switching Diode Part of the GreenUne™ Portfolio of devices with energy-conserving traits. This switching diode has the following features:
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MMBD1010LT1/D
MMBD1010LT1
MMBD2010T1
MMBD3010T1
MBD1010LT1/D
Marking J30 SOT23
4014C
g0750
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Untitled
Abstract: No abstract text available
Text: V SYNERGY DUAL TTL-to-DIFFERENTIAL p e c l tr a n s la to r SY10ELT22 SY100ELT22 SEMICONDUCTOR DESCRIPTION FEATURES 300ps typical propagation delay The SY10/100ELT22 are dual TTL-to-differential PECL translators. Because PECL Positive ECL levels are used, only +5V and ground are required. The small
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SY10ELT22
SY100ELT22
300ps
SY10/100ELT22
ELT22
10ELT
100ELT
100ps
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diode t88
Abstract: No abstract text available
Text: MOTOROLA Order this document by BAV70WT1/D SEMICONDUCTOR TECHNICAL DATA BAV70WT1 Dual Switching Diode M o to ro la P re ferre d D e vic e ANODE • N— ° 1 CATHODE -N - 2 -O MAXIMUM RATINGS T a = 2 5 ° C Symbol Max Unit Reverse Voltage Rating Vr 70
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BAV70WT1/D
BAV70WT1
SC-70/80T-323
bav70W
diode t88
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F927T
Abstract: 09 03 000 6181
Text: M O TO R O LA Order this document by MRF927T1/D SEMICONDUCTOR TECHNICAL DATA The RF Small Signal Line MRF927T1 NPN Silicon Low Voltage, Low Current, Low Noise, High-Frequency TVansistors IC = 10 mA LOW NOISE HIGH FREQUENCY TRANSISTOR Designed for use in low voltage, low current applications at frequencies to
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MRF927T1/D
MRF927T1
2PHX34612Q-0
22036E
F927T
09 03 000 6181
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Circuit using ic 1895 bel
Abstract: 80MPU BEL 1895 T6K19 nc1306 toshiba ad 149
Text: TOSHIBA TENTATIVE T6K19 TO SHIBA CMOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC T6K1 9 DOT MATRIX LCD DRIVER The T6K19 is an M LA driver for medium to small-sized Unit : mm dot matrix LCD panels. It supports a 4 / 8 -bit 80-series/ 6 8 -series parallel-MPU or serial interface, and can drive
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T6K19
T6K19
80-series/
68-series)
Circuit using ic 1895 bel
80MPU
BEL 1895
nc1306
toshiba ad 149
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rd1a
Abstract: No abstract text available
Text: TOSHIBA TENTATIVE T6K19 TO SHIBA CMOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC T6K1 9 DOT MATRIX LCD DRIVER The T6K19 is an M LA driver for medium to small-sized Unit : mm dot matrix LCD panels. It supports a 4 / 8 -bit 80-series/ 6 8 -series parallel-MPU or serial interface, and can drive
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T6K19
T6K19
80-series/
rd1a
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lcd panel 2000
Abstract: t 2295 a
Text: T6K19 TOSHIBA TENTATIVE TO SHIBA CMOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC T6K1 9 DOT MATRIX LCD DRIVER The T6K19 is an M LA driver for medium to small-sized Unit : mm dot matrix LCD panels. It supports a 4 / 8 -bit 80-series/ 6 8 -series parallel-MPU or serial interface, and can drive
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T6K19
T6K19
80-series/
lcd panel 2000
t 2295 a
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lcd panel 2000
Abstract: 7087b
Text: TOSHIBA TENTATIVE T6K19 TO SHIBA CMOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC T6K1 9 DOT MATRIX LCD DRIVER The T6K19 is an M LA driver for medium to small-sized Unit : mm dot matrix LCD panels. It supports a 4 / 8 -bit 80-series/ 6 8 -series parallel-MPU or serial interface, and can drive
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T6K19
T6K19
80-series/
lcd panel 2000
7087b
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Untitled
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MSD1819A-RT1 MSD1819A-ST1 NPN Silicon General Purpose Am plifier TVansistor M o to ro la P re fe rre d D evice s This NPN Silicon Epitaxial Planar Transistor is designed for general purpose am plifier applications. This device is housed in the SC -70/S O T-323 package
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-70/S
T-323
7-inch/3000
MSD1819A-RT1
MSD1819A-ST1
SD1819A-RT1
SD1819A-ST1
SD181
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Untitled
Abstract: No abstract text available
Text: O rder th is data sheet MOTOROLA b y M SD1819A-RT1/D SEMICONDUCTOR TECHNICAL DATA NPN Silicon G eneral Purpose A m plifier Transistor MSD1819A-RT1 MSD18 1 9A-ST1 M o to r o la P re fe rre d D e v ic e s This NPN Silicon Epitaxial Planar Transistor is designed for general purpose
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SD1819A-RT1/D
SC-70/SOT-323
7-inch/3000
MSD1819A-RT1
MSD18
2PHX31153F-0
MSD1819A-RT1/D
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Untitled
Abstract: No abstract text available
Text: M C 10H 606 M C 1 0 0H 6 06 M O TO R O LA R egistered H e x TTL/PE C L T ranslator REGISTERED HEX TTL/PECL TRANSLATOR The MC10/100H606 is a 6-bit, registered, single supply TTL to PECL translator. The device features differential PECL outputs as well as a choice
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MC10/100H606
MC10H606
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LA4192
Abstract: switch on off LA4190 of power switch LA4260 LA4270 LA4261 LA4265 Protector IC For Stereo Power Amplifier
Text: SANYO 7997076 SA N YO SEMICONDUCTOR S E M IC O N D U C T O R CORP 7b C OR P LA 4190,4192 D e | 7 c\ c\ 7 ü 7 h GOOiaSb 1 76C D -Ô S ~ ò J m o n o lith ic 01656 lin e a r IC 2-C H A N N E L AF POWER AMP. FOR TAPE RECORDER, RADIO Features • B u ilt-in 2 channels enabling use in stereo and
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LA4190:
LA4192:
27ohm'
51ohm,
LA4270
LA4192
switch on off
LA4190
of power switch
LA4260
LA4261
LA4265
Protector IC For Stereo Power Amplifier
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