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    L8050 TRANSISTOR Search Results

    L8050 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    L8050 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    L8050

    Abstract: L8050 pnp sot-23 1YC L8050QLT1G LT133
    Text: LESHAN RADIO COMPANY, LTD. General Purpose Transistors NPN Silicon L8050*LT1 FEATURE 3 ƽHigh current capacity in compact package. IC = 0.8A. 1 ƽEpitaxial planar type. 2 ƽPNP complement: L8550 ƽPb-Free Package is available. SOT–23 DEVICE MARKING AND ORDERING INFORMATION


    Original     		PDF L8050 L8550 L8050QLT1G 3000/Tape L8050QLT1 L8050PLT1G L8050PLT1 L8050 pnp sot-23 1YC L8050QLT1G LT133

    Untitled

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. General Purpose Transistors NPN Silicon L8050XLT1G FEATURE 3 ƽHigh current capacity in compact package. IC = 0.8A. 1 ƽEpitaxial planar type. 2 ƽNPN complement: L8050 ƽPb-Free Package is available. SOT–23 DEVICE MARKING AND ORDERING INFORMATION


    Original     		PDF L8050XLT1G L8050 L8050PLT1G 3000/Tape L8050PLT3G 10000/Tape L8050QLT1G L8050QLT3G

    L8050

    Abstract: L8050QLT1G L8050PLT1G L8050RLT1G L8050SLT1G
    Text: LESHAN RADIO COMPANY, LTD. General Purpose Transistors NPN Silicon L8050PLT1G Series FEATURE 3 ƽHigh current capacity in compact package. IC = 0.8A. 1 ƽEpitaxial planar type. 2 ƽNPN complement: L8050 ƽPb-Free Package is available. SOT–23 DEVICE MARKING AND ORDERING INFORMATION


    Original     		PDF L8050PLT1G L8050 3000/Tape L8050PLT3G 10000/Tape L8050QLT1G L8050QLT3G L8050 L8050QLT1G L8050PLT1G L8050RLT1G L8050SLT1G

    Untitled

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. General Purpose Transistors NPN Silicon L8050PLT1G Series S-L8050PLT1G Series FEATURE ƽHigh current capacity in compact package. IC = 0.8A. 3 ƽEpitaxial planar type. ƽNPN complement: L8050 ƽPb-Free Package is available. 1 ƽS- Prefix for Automotive and Other Applications Requiring Unique Site


    Original     		PDF L8050PLT1G S-L8050PLT1G L8050 AEC-Q101 3000/Tape L8050PLT3G S-L8050PLT3G 10000/Tape

    Untitled

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. General Purpose Transistors L8050*LT1 3 1 2 MAXIMUM RATINGS Rating Symbol Max Unit Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current-continuoun VCEO VCBO VEBO IC 25 40 5 800 V V V mAdc SOT–23


    Original     		PDF L8050 L8050LT1 OT-23 L8050LT1â

    Untitled

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. General Purpose Transistors L8050*LT1 3 1 2 MAXIMUM RATINGS Rating Symbol Max Unit Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current-continuoun VCEO VCBO VEBO IC 25 40 5 800 V V V mAdc SOT–23


    Original     		PDF L8050 OT-23

    Untitled

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. General Purpose Transistors NPN Silicon L8050PLT1G Series S-L8050PLT1G Series FEATURE ƽHigh current capacity in compact package. IC = 0.8A. ƽEpitaxial planar type. 3 ƽNPN complement: L8050 ƽPb-Free Package is available. ƽS- Prefix for Automotive and Other Applications Requiring Unique Site


    Original     		PDF L8050PLT1G S-L8050PLT1G L8050 AEC-Q101 3000/Tape L8050PLT3G S-L8050PLT3G 10000/Tape

    l8050 transistor

    Abstract: BR 8050 L8050 BR 8050 D npn 8050
    Text: LESHAN RADIO COMPANY, LTD. TO-92 Plastic-Encapsulate Transistors L8050 TRANSISTOR˄ NPN˅ TO ü 92 FEATURES Power dissipation PCM : 1 W ˄Tamb=25ć˅ 1.EMITTER Collector current ICM: 1.5 A Collector-base voltage 2.BASE 3. COLLECTOR V BR CBO : 40 V Operating and storage junction temperature range


    Original     		PDF L8050 L8050-1/3 L8050-2/3 270TYP 050TYP L8050-3/3 l8050 transistor BR 8050 L8050 BR 8050 D npn 8050

    2x062h

    Abstract: gk105 1SS216 GK104 SMD Transistors w06 D20SB80 SMD marking 5As D25SB80 LRB706F-40T1G 2x062
    Text: Leshan Radio Company, Ltd. 2008 PRODUCTS CATALOGUE 目 录 CONTENT 开关二极管 SWITCHING DIODES. 1 1. SOD–923 Surface Mount Switching Diodes. 1


    Original     		PDF ZMM22 ZMM24 ZMM27 ZMM43 ZMM47 2x062h gk105 1SS216 GK104 SMD Transistors w06 D20SB80 SMD marking 5As D25SB80 LRB706F-40T1G 2x062