Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    L791CRB Search Results

    L791CRB Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    BUL791

    Abstract: No abstract text available
    Text: BUL791 NPN SILICON POWER TRANSISTOR ● Designed Specifically for High Frequency Electronic Ballasts up to 125 W ● hFE 6 to 22 at VCE = 1 V, IC = 2 A ● Low Power Losses On-state and Switching ● Key Parameters Characterised at High Temperature ● Tight and Reproducible Parametric


    Original
    PDF BUL791 O-220 L791CFB L791CRB BUL791

    Untitled

    Abstract: No abstract text available
    Text: BUL791 NPN SILICON POWER TRANSISTOR Designed Specifically for High Frequency Electronic Ballasts up to 125 W hFE 6 to 22 at VCE = 1 V, IC = 2 A Low Power Losses On-state and Switching Key Parameters Characterised at High Temperature Tight and Reproducible Parametric


    Original
    PDF BUL791 O-220 L791CFB L791CRB

    BUL791

    Abstract: No abstract text available
    Text: BUL791 NPN SILICON POWER TRANSISTOR Copyright 1997, Power Innovations Limited, UK ● Designed Specifically for High Frequency Electronic Ballasts up to 125 W ● hFE 6 to 22 at VCE = 1 V, IC = 2 A ● Low Power Losses On-state and Switching ● Key Parameters Characterised at High


    Original
    PDF BUL791 O-220 BUL791

    Untitled

    Abstract: No abstract text available
    Text: BUL791 NPN SILICON POWER TRANSISTOR ● Designed Specifically for High Frequency Electronic Ballasts up to 125 W ● hFE 6 to 22 at VCE = 1 V, IC = 2 A ● Low Power Losses On-state and Switching ● Key Parameters Characterised at High Temperature ● Tight and Reproducible Parametric


    Original
    PDF BUL791 O-220 L791CFB L791CRB

    Untitled

    Abstract: No abstract text available
    Text: BUL791 NPN SILICON POWER TRANSISTOR ● Designed Specifically for High Frequency Electronic Ballasts up to 125 W ● hFE 6 to 22 at VCE = 1 V, IC = 2 A ● Low Power Losses On-state and Switching ● Key Parameters Characterised at High Temperature ● Tight and Reproducible Parametric


    Original
    PDF BUL791 O-220 L791CFB L791CRB

    BUL791

    Abstract: No abstract text available
    Text: BUL791 NPN SILICON POWER TRANSISTOR ● Designed Specifically for High Frequency Electronic Ballasts up to 125 W ● hFE 6 to 22 at VCE = 1 V, IC = 2 A ● Low Power Losses On-state and Switching ● Key Parameters Characterised at High Temperature ● Tight and Reproducible Parametric


    Original
    PDF BUL791 O-220 BUL791