MPQ2222

Abstract: transistor 650 MPQ2221
Contextual Info: CENTRAL SEMICONDUCTOR TE D e | Ie]fl‘nt, 3 0DDD3tM S l-r-Ha-as- DESCRIPTION The CENTRAL SEMICONDUCTOR M P Q 2 2 2 1 , MPQ2222 types are comprised of four independ ent S iIi con NPN Transistors mounted in a 14 PIN DIP, designed for general purpose amplifier and switching appl¡cations.

h33 diode

Contextual Info: MIVR 42095 mn NEGATIVE HIGH TEMPERATURE REGULATOR Designed for use in high temperature environments FEATURES • Output current to 1.5 amps • Input voltage to -30V • Internal short circuit protection, foldbackand current limiting • StorageTemperature +250°C

2SC2194

Contextual Info: ~si TOSHIBA { D I S C R E T E / O P T 0> 9097250 TOSHIBA deI^oivsso 00072m 0 56C <D ISCRETE/O PTO 0 72 4 -L ~l n SILICON PNP EPITAXIAL TYPE PCT PROCESS) Unit in mm POWER AMPLIFIER APPLICATIONS. &9MAX. 03.g±O.2 FEATURES : . Suitable for TV Sound•Output, Vert. Deflection

quad N-Channel MOSFET dip package

Contextual Info: SHORT FORM CATALOG ADVANCED LINEAR DEVICES, INC. precision analog semiconductors Nano-Power • Standard & Unique Functions • User-Specified Options Small Signal MOSFET Arrays Operational Amplifiers EPAD Voltage Comparators Analog Switches CMOS Analog Timers

m1305 transistor

Abstract: w431 MRF1421C Diode LT 4104 NJT1946A 7082a NJT1949 magnetron 2j42 MSF1422B magnetron 5kw
Contextual Info: INTEGRATED CIRCUITS BIPOLAR OPERATIONAL AMPLIFIER TY PE s I N G ¥ D U A L Q u A D H E X D E S C R IP T IO N NJMOP-07 NJM318 NJM741 NJM2107F NJM2130 NJM425# NJM5534 NJM 022 N JM 022B NJM 062 N JM 072B N JM 082B NJM353 NJM1458 NJM2041 NJM2043 NJM2068 NJM2082

2N2907

Abstract: PN2907 PN2907A J 2N2907 2N2222 2N2222A 2N2907A PN2222 PN2222A PNP pN2907
Contextual Info: CASE TO-18 CASE T0-92A CBE EBC 2N2907 2N2907A PN2907 PN2907A THE 2N2907, 2N2907A, PN2907, PN2907A ARE PNP SILICON PLANAR EPITAXIAL TRANSISTORS FOR GENERAL PURPOSE AMPLIFIERS AND MEDIUM SPEED SWITCHING APPLICATIONS. THEY ARE COMPLEMENTARY TO THE NPN TYPE 2N2222,

LA5525

Contextual Info: nfinnííuraWYi'íTíüt nn n/c • îfe^ ûSEJ¥?2Çi*æ < »^ O S'3ï¥lfi 'm # < 3V 2 * 5U03 a :g HS-daS ■OANVS s a =»QN5 ! î : iOOA - z D O h -. X esn su uiOJf linsßj AO LU i^!i|M sbdjbú pjuji *o SI | u J&UlO jo $ju& . jed jo siusLueftuiJ^ui Awe jgj iog '-osn su jo j O à N V S

Contextual Info: T D 6 2 3 0 1 P , T flß O Q flO D BIPOLAR DIGITAL INTEGRATED C IR C U IT S ILICO N M O NO LITHIC IU D ¿ O U ¿ r TD62301P LOW SATURATION DRIVER TD62302P LOW SATURATION DRIVER Features • L ow S a turation Outputs • Output Rating • Output V^j; sat =0. 7V Max

2SC642

Abstract: 2sc642A 2SC643A YS 150 003 b AC42C VC30 TRANSISTOR OSF
Contextual Info: SILICON NPN TR IP L E D IFFU SE D MESA TRANSISTOR O ° * y — t ~^ tü tin Unit in mm PR 02S.OUAX. Color TV Vertical Output Applications 021.0 MAX • ttH Ü tŒ T-i- ; • V CB O = H 0 0 V 3 S C 6 4 2 = 1500V (2SC643A) v d K ( s u e ) = ,7 0 0 V ( 2 S C 6 4 2 )

EIAJ C-3

Contextual Info: TO KO Inc TK716xx Production Standard Note TK716xxSCLH Table of Contents 1 . S tru c tu re /F e a tu re 2 . Electrical C haracteristics Specification 3 . Pin layout 4 . Test Circuit 5 . Block Diagram 6 . Definition of Terms 7. 8. 9. 1 0. 1 1. In p u t O utput Capacitor

54527p

Abstract: M54527
Contextual Info: M I T S U B I S H I B IP O L A R D IG I T A L ICs M54527P 6 -U N IT 150mA DARLINGTON TR A N S ISTO R ARRAY W IT H C L A M P DIODE DESCRIPTION The M54527P, 6-channel sink driver, consists of 12 NPN tran­ sistors connected to form high current gain driver pairs.

2N5583

Abstract: CM5583 pnp rf transistor ic lg 631 LG 631 IC
Contextual Info: Data Sheet CM5583 Central" PNP HIGH FREQUENCY SILICON TRANSISTOR Sem iconductor Corp. 145 Adam s Avenue, Hauppauge, NY 11788 USA Tel: 631 435-1110 • Fax: (631) 435-1824 JEDEC TO-39 CASE Manufacturers of W orld C lass Discrete Semiconductors DESCRIPTION

Contextual Info: 30E 3> un • 7^237 0D31Q77 T ■ -Z3 B S Y 53 B S Y 54 S G S -T H O M S O N laJÛTTOMDigS S G S-THOMSON GENERAL PURPOSE AMPLIFIERS DESC RIPTIO N The BSY53 and BSY54 are silicon planar epitaxial NPN transistors in Jedec TO-39 metal case, inten­ ded for use in general purpose amplifiers.

2N5107

Abstract: 2N3109 2N3107 2N3108 2N3110 IN3600 2N4030 2N4032
Contextual Info: 2N3107 th ro u g h 2N3110 NPN SILICON AF MEDIUM POWER AMPLIFIERS & SWITCHES I :r's : < yy ji - . v; >> r CASE TO-39 THE 2N3107 THROUGH 2N3110 ARE NPN SILICON PLANAR EPITAXIAL TRANSISTORS FOR AF MEDIUM POWER DRIVERS AND OUTPUTS, AS WELL AS FOR SWITCHING APPLICATIONS

VCAQ

Abstract: BSY88 0058C
Contextual Info: GENERAL DESCRIPTION : The BSY88 i s a NPN s i l i c o n 4 plan ar e p ita x ia l t r a n s is t o r . I t f e a t u r e s h i g h breakdow n and low s a t u r a t i o n v o l t a g e . I t is in te n d e d f o r medium power a m p l i f i e r d r i v e r s t a g e and g e n e r a l p u rp o se

IRS540

Abstract: MP 3389 IEI-1213 IRS540-1 RL 782 relay 1202 smd diode ic337 IEI-1207 RADEOn equlpment transistor
Contextual Info: DESCRIPTION The~rPAl6MlIcMor~allthicN-channel power in 8 circult# and Gate Protection Dio4e Thermal ryQ skI;l 4ffay )If#krrffl c@sigl)tlg [HI fb\#. f%#~v Head, and 8~ on. FEATURES Direct driving is poooible by standarq (4 V driving II) possible) * Output voltage: Vo = 30 V MAX.

5953-0406E

Abstract: IC 7414 not gate with schmitt trigger OPTOCOUPLER 3700 optocoupler with schmitt trigger input optocoupler PC 187 HCPL-3700 Application note 1004 HCPL-3700 IC 7414 datasheet working of ic 7414 MC6821
Contextual Info: Threshold Sensing for Industrial Control Systems with the HCPL-3700 Interface Optocoupler Application Note 1004 Introduction The use of electronic logic circuitry in most applications outside of a controlled environment very quickly brings the design engineer into contact with the problems

Contextual Info: MECHANICAL OUTLINE GENERAL DESCRIPTION : The BSY88 is a NPN s i l i c o n ' p la n a r e p i t a x i a l t r a n s i s t o r . I t f e a tu r e s h ig h breakdown and low s a t u r a t i o n v o l t a g e . I t is in te n d e d f o r medium power a m p lif ie r

SY 356/2

Abstract: la 4292 wi85 glj 504 TL 494 CN 400H TK716XX
Contextual Info: IC DATA SH EET TK716XXS • p J Ig T 'fo y & n m z m à te n -x, o s t . • ììiij o n / o f f= I > h P - ;l/ # è • S S S fK Ü d * « Œ High/on t t . O fïfë À * ! « » $ $ / > (pA K W T t . (± 1 % or +40m V) # *P f i (± 2 % or ±60m V ) • ' J > Ü ^ A t t i t > M E E £ , PN P /<! 7 - h 5 > ÿ 7 ÿ - r t l ,

LA5522

Abstract: SANYO LA5522 LA5521D lopg T370 5522 LA552
Contextual Info: L A 5 5 2 1 D Mac 1 9 5 6 > Ì ; . , 5 5 2 2 5 165 ✓ 303IA f ô î E E E D C i — " X . N / dg ^ ^ o is /s a ^ -r s f y £ « * & • « £ DC í - í S r ^ i E ^ j W C T f t ^ r ^ * * : ?M,7t 11 Slíáa I.8— < 'J ^ öv. //^ 7 r - '> ^ f : ^ ) S ^ I S S i t a ^ Ä L r i i D

7L Marking

Contextual Info: LT1579 300mA Dual Input Smart Battery Backup Regulator F€flTUR€S D€SCRIPTIOfl • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ The LT 1579 is a dual input, single output, low dropout regulator. This device is designed to provide an uninterruptible output voltagefrom two independent input

BSY88

Abstract: v30010
Contextual Info: GENERAL DESCRIPTION : The BSY88 i s a NPN s i l i c o n ' p lan ar e p ita x ia l t r a n s i s t o r . I t f e a t u r e s h i g h breakd ow n and low s a t u r a t i o n v o l t a g e . I t is in te n d e d f o r medium pow er a m p l i f i e r d r i v e r s t a g e and g e n e r a l p u rp o se

2930l

Abstract: NJM2930 NJM2930F NJM2930L NJM2930L05 C210A
Contextual Info: NJM2930 A iti t ¡ Ix % =L \ S - ? m NJM2930 li3 íf f i'íIE liig f f l J lii[ H ï& ’T'Î> U m tt „ W i ^ A ^ O T t t A i r i g i E 150mA, 2 9 3 0 L T ÌÌ 100mA T O . 6 V W T 1 1' T O -2 2 0 F Ò ít ílí S Æ L T f c U í f o É * (7 ) 3 ^ I E 1 i S f f l ^ W

CDC2509

Contextual Info: Preliminary KMM378S1723T SDRAM MODULE KMM378S1723T 16Mx72 SDRAM DIMM with PLL & Register based on 16Mx8, 4Banks, 4K Ref. 3.3V Synch. DRAMs GENERAL DESCRIPTION FEATURE The Samsung KMM378S1723T is a 16M bit x 72 Synchronous • Performance range Dynamic RAM high density memory module. The Samsung