RO4003
Abstract: rogers LP1500SOT89 293D105X0035B2T LL1005-FH1N8S LL1005-FH27NK LL1005-FH3N3S LL1608-FH27NK 56348 RO-4003
Text: EB1500SOT89AA LP1500SOT89 1.85 GHZ LNA EVALUATION BOARD • FEATURES ♦ ♦ ♦ ♦ 0.8 dB Noise Figure 19 dBm Output Power 40 dBm Third-Order Intercept Point SOT89 Surface Mount Package EB1500SOT89AA EVALUATION BOARD • DESCRIPTION AND APPLICATIONS This evaluation board is a single-ended, reactively-matched, dual-biased, low-noise, high dynamicrange amplifier. Its center operating frequency is 1.85 GHz, and it has a representative noise figure
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EB1500SOT89AA
LP1500SOT89
EB1500SOT89AA
LP1500SOT89;
32-mil
RO4003
DOC-009
DSS-045A
rogers
293D105X0035B2T
LL1005-FH1N8S
LL1005-FH27NK
LL1005-FH3N3S
LL1608-FH27NK
56348
RO-4003
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RO4003
Abstract: 293D105X0035B2T LL1005-FH2N2S LL1608-FH27NK LP3000SOT89 ca sma 2064-000-00
Text: EB3000SOT89AA LP3000SOT89 1.85 GHZ POWER EVALUATION BOARD • FEATURES ♦ ♦ ♦ ♦ 30 dBm Output Power 10 dB Associated Gain 1.8 dB Noise Figure SOT89 Surface Mount Package EB3000SOT89AA EVALUATION BOARD • DESCRIPTION AND APPLICATIONS This evaluation board is a single-ended, reactively-matched, dual-biased, low-noise, high dynamicrange amplifier. Its center operating frequency is 1.85 GHz and has a representative output power of
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EB3000SOT89AA
LP3000SOT89
EB3000SOT89AA
LP3000SOT89;
RO4003
DOC-009
DSS-046A
293D105X0035B2T
LL1005-FH2N2S
LL1608-FH27NK
ca sma
2064-000-00
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ATF-50189
Abstract: ATF50189 BLM21P
Text: Agilent ATF-50189 Low Cost High Linearity Buffer/Driver Amplifier in Industry Standard SOT-89 Package Preliminary Application Note 5049 Introduction Agilent Technologies’s ATF50189 is a high linearity, medium power, low noise EpHEMT FET in a low cost surface mount SOT89 package.
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ATF-50189
OT-89
ATF50189
BLM21P
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ATF-50189
Abstract: BLM21P R 0603
Text: ATF-50189 Low Cost High Linearity Buffer/Driver Amplifier in Industry Standard SOT-89 Package Application Note 5049 Introduction Demoboard Avago Technologies’ ATF-50189 is a high linearity, medium power, low noise E-pHEMT FET in a low cost surface mount SOT89 package. It is suitable for high output IP3
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ATF-50189
OT-89
ATF-50189
ATF-50189.
AV02-0001EN
BLM21P
R 0603
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RF3315
Abstract: IPC-SM-782
Text: RF3315 RF3315Broadband High Linearity Amplifier BROADBAND HIGH LINEARITY AMPLIFIER GND Package Style: SOT89 Features 1 2 3 RF OUT 4 GND 200MHz to 3GHz +41dBm Output IP3 18dB Gain at 900MHz +25dBm P1dB 2.5dB Typical Noise Figure at 900MHz
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RF3315
RF3315Broadband
200MHz
41dBm
900MHz
25dBm
RF3315
DS091103
IPC-SM-782
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C1005C0G1H101JT000F
Abstract: Murata Moca 0402CS-5N6XJL
Text: RF3315 RF3315Broadband High Linearity Amplifier BROADBAND HIGH LINEARITY AMPLIFIER GND Package Style: SOT89 Features 1 2 3 RF OUT GND 4 200MHz to 2200MHz +41dBm Output IP3 18dB Gain at 900MHz +25dBm P1dB 2.5dB Typical Noise Figure at
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RF3315Broadband
RF3315
200MHz
2200MHz
41dBm
900MHz
25dBm
900MHz
RF3315
C1005C0G1H101JT000F
Murata Moca
0402CS-5N6XJL
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Untitled
Abstract: No abstract text available
Text: RF3315 RF3315Broadband High Linearity Amplifier BROADBAND HIGH LINEARITY AMPLIFIER GND Package Style: SOT89 Features 1 2 3 RF OUT GND 4 200MHz to 2200MHz +41dBm Output IP3 18dB Gain at 900MHz +25dBm P1dB 2.5dB Typical Noise Figure at
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RF3315
RF3315Broadband
200MHz
2200MHz
41dBm
900MHz
25dBm
RF3315
DS120530
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LL1005-FH4N7S
Abstract: 56348 LP750SOT89 RO4003 RO-4003 293D105X0035B2T LL1005-FH2N7S LL1608-FH27NK 2064-0000-00 DSS-044
Text: EB750SOT89AA LP750SOT89 1.85 GHZ LNA EVALUATION BOARD • FEATURES ♦ ♦ ♦ ♦ 0.65 dB Noise Figure 19 dBm Output Power 35 dBm Third-Order Intercept Point SOT89 Surface Mount Package EB750SOT89AA EVALUATION BOARD • DESCRIPTION AND APPLICATIONS This evaluation board is a single-ended, reactively-matched, dual-biased, low-noise, high dynamicrange amplifier. Its center operating frequency is 1.85 GHz and has an representative noise figure of
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EB750SOT89AA
LP750SOT89
EB750SOT89AA
LP750SOT89;
RO4003
DOC-009
DSS-044
LL1005-FH4N7S
56348
RO-4003
293D105X0035B2T
LL1005-FH2N7S
LL1608-FH27NK
2064-0000-00
DSS-044
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matching circuit of atf 52189
Abstract: BLM21PG600SN1D 53189 ATF-52189 ATF-521P8 ATF-53189 RO4350 depletion mode PHEMT .s2p
Text: 2.0 GHz high-linearity second stage LNA/ driver using the ATF-52189 Application Note 5245 Introduction EPHEMT Biasing Avago Technologies’ ATF-52189 is a high linearity, medium power, low noise E-pHEMT FET in a low cost surface mount SOT89 package. It is suitable for high
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ATF-52189
ATF-52189
ATF-521P8
5989-4040EN
matching circuit of atf 52189
BLM21PG600SN1D
53189
ATF-521P8
ATF-53189
RO4350
depletion mode PHEMT .s2p
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SMA MARKING 1475
Abstract: MurataGRM1555 BGU7003 mmic marking L MMIC marking code 132 MMIC marking code R
Text: BGU7003 Wideband silicon germanium low-noise amplifier MMIC Rev. 01 — 2 March 2009 Product data sheet 1. Product profile 1.1 General description The BGU7003 MMIC is a wideband amplifier in SiGe:C technology for high speed, low-noise applications in a plastic, leadless 6 pin, extremely thin small outline SOT891
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BGU7003
BGU7003
OT891
SMA MARKING 1475
MurataGRM1555
mmic marking L
MMIC marking code 132
MMIC marking code R
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Untitled
Abstract: No abstract text available
Text: E-PHEMT AE308 Product Features • • • • • Application SOT89 Type Package 50MHz-1GHz 2.0 dB Noise Figure +18.0 dBm P1dB Single +5V Supply • CATV Amplifier 4 3 2 1 Function Pin No. Input 1 Output Bias 3 Ground 2,4 Description AE308 is used from 50MHz to 1GHz frequencies.
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AE308
50MHz-1GHz
AE308
50MHz
OT-89,
S21-Gain
S11-Input
S22-Output
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MMIC marking code R
Abstract: BGU7003 MURATA LQW15A Germanium power mmic amplifier marking code l silicon germanium
Text: BGU7003 Wideband silicon germanium low-noise amplifier MMIC Rev. 02 — 22 June 2010 Product data sheet 1. Product profile 1.1 General description The BGU7003 MMIC is a wideband amplifier in SiGe:C technology for high speed, low-noise applications in a plastic, leadless 6 pin, extremely thin small outline SOT891
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BGU7003
BGU7003
OT891
MMIC marking code R
MURATA LQW15A
Germanium power
mmic amplifier marking code l
silicon germanium
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power amplifier circuit diagram with pcb layout
Abstract: AH125-89G AH125 11304-3S rf power amplifier circuit diagram with pcb layout OZ 960 "30 mhz" driver Amplifier 27 Mhz power amplifier as 123 0603
Text: Application Note AH125 869 – 960 MHz Balanced Amplifier Reference Design Summary AH125 is a high dynamic range driver amplifier in low-cost surface mount package. This application note explains the performance of AH125 amplifier in balanced configuration. The balanced AH125 amplifier provides +19.7 dB gain with +47.7 dBm of OIP3 at 920 MHz.
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AH125
1-800-WJ1-4401
power amplifier circuit diagram with pcb layout
AH125-89G
11304-3S
rf power amplifier circuit diagram with pcb layout
OZ 960
"30 mhz" driver Amplifier
27 Mhz power amplifier
as 123 0603
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Untitled
Abstract: No abstract text available
Text: BGU7003 Wideband silicon germanium low-noise amplifier MMIC Rev. 02 — 22 June 2010 Product data sheet 1. Product profile 1.1 General description The BGU7003 MMIC is a wideband amplifier in SiGe:C technology for high speed, low-noise applications in a plastic, leadless 6 pin, extremely thin small outline SOT891
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BGU7003
BGU7003
OT891
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Untitled
Abstract: No abstract text available
Text: E-PHEMT AE308 Product Features • • • • • Application SOT89 Type Package 50MHz-1GHz 2.0 dB Noise Figure +18.0 dBm P1dB Single +5V Supply • CATV Amplifier 4 3 2 1 Function Pin No. Input 1 Output Bias 3 Ground 2,4 Description AE308 is used from 50MHz to 1GHz frequencies.
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AE308
50MHz-1GHz
AE308
50MHz
OT-89,
S21-Gain
S11-Input
S22-O
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PowerMOS Transistors
Abstract: 075E05 MS-012AA SO24 SSOP16 SSOP24
Text: Philips Semiconductors PowerMOS transistors Package outlines PACKAGE OUTLINES Package SOT23 SOT54 TO-92 SOT54variant (TO-92variant) SOT78 (TO-220AB) SOT89 SOT96-1 (SO8) SOT137-1 (SO24) SOT186 (TO-220 exposed tabs) SOT186A (TO-220) SOT223 SOT226 (low-profile TO-220)
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OT54variant
O-92variant)
O-220AB)
OT96-1
OT137-1
OT186
O-220
OT186A
O-220)
OT223
PowerMOS Transistors
075E05
MS-012AA
SO24
SSOP16
SSOP24
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r0603
Abstract: S0603 RJ11x2 RV1 1M DM9601 DM9801E
Text: 8 7 Q1 G910/SOT89 VIN +3.3V + C2 47UF/25V/E.C. 2 L1 1 D MDC MDIO +3.3V X X X EECS PW_RST# X X X X X X X X 4.7K x 4 + C3 1UF/25V/E.C. RESET 75 74 73 72 71 70 69 68 67 66 65 64 63 62 61 60 59 58 57 56 55 54 53 52 51 DGND X RX_CLK RX_DV COL CRS RXD3 RXD2 RXD1
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G910/SOT89
47UF/25V/E
1UF/25V/E
C0603
BEAD/120ohm
S0603
25MHZ/49US
r0603
S0603
RJ11x2
RV1 1M
DM9601
DM9801E
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167D
Abstract: TB167D ph c24 zener diode amidon BN-61-202 ph c20 zener diode ph c13 zener diode ph c24 zener
Text: July 13, 2012 TB167D#7 Frequency=30-512MHz Pout=100W Gain=30dB Vds=28Vdc Idq=0.4+0.8A Efficiency=38 to 50% LQ801>LB501A PH: 805 484-4210 FAX:(805)484-3393 1110 Avenida Acaso, Camarillo CA 93012 www.polyfet.com July 13, 2012 40 100 35 80 30 60 25 40 20 20 100
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TB167D
30-512MHz
28Vdc
LQ801
LB501A
28Vdc,
0R0J12AFX
167D
ph c24 zener diode
amidon BN-61-202
ph c20 zener diode
ph c13 zener diode
ph c24 zener
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Untitled
Abstract: No abstract text available
Text: AP1117/AP1117I 1A DROPOUT POSITIVE ADJUSTABLE OR FIXED-MODE REGULATOR Description Pin Assignments AP1117 is a low dropout positive adjustable or fixed-mode regulator SOT89-3 with 1A output current capability. The product is voltage specifically designed to provide well-regulated supply for low IC applications such
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AP1117/AP1117I
AP1117
AP1117)
AP1117I)
OT223)
DS31009
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adj1117
Abstract: marking Y2 transistor
Text: AP1117/AP1117I 1A DROPOUT POSITIVE ADJUSTABLE OR FIXED-MODE REGULATOR Description Pin Assignments AP1117 is a low dropout positive adjustable or fixed-mode regulator SOT89-3 with 1A output current capability. The product is voltage specifically designed to provide well-regulated supply for low IC applications such
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AP1117/AP1117I
AP1117
AP1117)
AP1117I)
OT223)
DS31009
adj1117
marking Y2 transistor
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Untitled
Abstract: No abstract text available
Text: AP1117/AP1117I 1A DROPOUT POSITIVE ADJUSTABLE OR FIXED-MODE REGULATOR Description Pin Assignments AP1117 is a low dropout positive adjustable or fixed-mode regulator SOT89-3 with 1A output current capability. The product is voltage specifically designed to provide well-regulated supply for low IC applications such
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AP1117/AP1117I
AP1117
OT89-3
DS31009
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MwT-1789
Abstract: 1789
Text: Application Notes MwT-1789LN DC-4 GHz Packaged FET June 2005 Application Circuits For Low Noise Typical RF Performance bias at Vds=5V, Ids=200mA, Ta=25°C Parameter Units Test Frequency MHz 870-960 1800-2100 2400-2600 3400-3600 dB 18 16 13 10 dBm 43 43 46
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MwT-1789LN
200mA,
100mA
MwT-1789
MwT-1789
1789
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L4 SOT89
Abstract: c9 sot89
Text: MwT-1789LN DC-4 GHz Packaged FET Application Note June 2006 Application Circuits For Low Noise: Typical RF Performance bias at Vds=5V, Ids=200mA, Ta=25°C Parameter Typical Data Units Test Frequency Gain Output IP3 Noise Figure * MHz 870-960 1800-2100 2400-2600
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MwT-1789LN
200mA,
100mA
MwT-1789
OT-89
L4 SOT89
c9 sot89
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AFT504
Abstract: No abstract text available
Text: Freescale Semiconductor Technical Data Document Number: AFT05MS004N Rev. 0, 7/2014 RF Power LDMOS Transistor High Ruggedness N-Channel Enhancement-Mode Lateral MOSFET AFT05MS004NT1 Designed for handheld two-way radio applications with frequencies from 136 to 941 MHz. The high gain, ruggedness and wideband performance of this
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AFT05MS004N
AFT05MS004NT1
AFT504
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