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    L4 SOT Search Results

    L4 SOT Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    7UL2T125FK Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), Buffer, SOT-765 (US8), -40 to 85 degC Visit Toshiba Electronic Devices & Storage Corporation
    TC75S102F Toshiba Electronic Devices & Storage Corporation Operational Amplifier, 1.5V to 5.5V, I/O Rail to Rail, IDD=0.27μA, SOT-25 Visit Toshiba Electronic Devices & Storage Corporation
    7UL2T126FK Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), Buffer, SOT-765 (US8), -40 to 85 degC Visit Toshiba Electronic Devices & Storage Corporation
    TCR2EF18 Toshiba Electronic Devices & Storage Corporation LDO Regulator, Fixed Output, 1.8 V, 200 mA, SOT-25 (SMV) Visit Toshiba Electronic Devices & Storage Corporation
    TCR2LF18 Toshiba Electronic Devices & Storage Corporation LDO Regulator, Fixed Output, 1.8 V, 200 mA, SOT-25 (SMV) Visit Toshiba Electronic Devices & Storage Corporation
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    L4 SOT Price and Stock

    Tripp Lite ISOTEL4 ULTRA

    Power Outlet Strips 4 OUTLET 6' MOD/FAX
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics ISOTEL4 ULTRA
    • 1 $70.77
    • 10 $70.77
    • 100 $68.17
    • 1000 $68.17
    • 10000 $68.17
    		Get Quote

    L4 SOT Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    transistor mark l6

    Abstract: KST1623L6 KST1623L3 KST1623L4 KST1623L5 KST1623L7 sot-23 Marking l7 SOT23 MARKING L7 marking L5 sot-23
    Text: KST1623L3/L4/L5/L6/L7 KST1623L3/L4/L5/L6/L7 Amplifier Transistor 2 1 SOT-23 1. Base 2. Emitter 3. Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO Collector-Base Voltage Parameter Value 50 Units


    Original     		PDF KST1623L3/L4/L5/L6/L7 OT-23 KST1623L3 transistor mark l6 KST1623L6 KST1623L3 KST1623L4 KST1623L5 KST1623L7 sot-23 Marking l7 SOT23 MARKING L7 marking L5 sot-23

    DIODE marking L4

    Abstract: marking l4 sot-23 BAT54 marking L4
    Text: Schottky Barrier Diode BAT54 200 mA SOT-23 1. Anode 2. NC 3. Cathode GENERAL PURPOSE DETEDTION HIGH SPEED SWITCHING LOW REVERSE CURRENT AND FORWARD VLOTAGE MARKING: L4 MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS（Ta=25℃） PARAMETERS Reverse Voltage


    Original     		PDF BAT54 OT-23 100mA DIODE marking L4 marking l4 sot-23 BAT54 marking L4

    KST1623L7

    Abstract: No abstract text available
    Text: NPN EPITAXIAL SILICON TRANSISTOR KST1623L3/L4/L5/L6/L7 AMPLIFIER TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS TA=25°°C Characteristic Symbol Rating Unit 50 40 5.0 100 350 150 V V V mA mW °C VCBO VCEO VEBO IC PC T STG Collector-Base Voltage Collector-Emitter Voltage


    Original     		PDF KST1623L3/L4/L5/L6/L7 OT-23 KST1623L3 KST1623L4 KST1623L5 KST1623L6 KST1623L7

    SI2304BDS

    Abstract: No abstract text available
    Text: Si2304BDS Vishay Siliconix New Product N-Channel 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) ID (A) 0.070 @ VGS = 10 V 3.2 0.105 @ VGS = 4.5 V 2.6 TO-236 (SOT-23) G 1 3 S D 2 Top View Si2304BDS (L4)* *Marking Code Ordering Information: Si2304BDS-T1


    Original     		PDF Si2304BDS O-236 OT-23) Si2304BDS-T1 S-32137--Rev. 27-Oct-03

    Untitled

    Abstract: No abstract text available
    Text: DRA2123J Silicon PNP epitaxial planar type For digital circuits Complementary to DRC2123J Unit: mm • Features  Low collector-emitter saturation voltage VCE sat  Halogen-free / RoHS compliant (EU RoHS / UL-94 V-0 / MSL: Level 1 compliant)  Marking Symbol: L4


    Original     		PDF DRA2123J DRC2123J UL-94 DRA2123J0L SC-59A O-236ts.

    Untitled

    Abstract: No abstract text available
    Text: PDF: 2001 Apr 04 Philips Semiconductors Package outline Plastic single-ended multi-chip package; 6 interconnections; 5 in-line leads SOT637 HE1 A E F1 Q1 R L1 bp1 F D D3 D2 L D3 A B HE SENSOR DIE POSITION centre of reading point D1 * L4 L3 L2 1 2 3 4 5 bp


    Original     		PDF OT637

    Si2304BDS

    Abstract: Si2304BDS-T1
    Text: Si2304BDS Vishay Siliconix New Product N-Channel 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) ID (A) 0.070 @ VGS = 10 V 3.2 0.105 @ VGS = 4.5 V 2.6 TO-236 (SOT-23) G 1 3 S D 2 Top View Si2304BDS (L4)* *Marking Code Ordering Information: Si2304BDS-T1—E3


    Original     		PDF Si2304BDS O-236 OT-23) Si2304BDS-T1--E3 S-32412--Rev. 24-Nov-03 Si2304BDS-T1

    Untitled

    Abstract: No abstract text available
    Text: PDF: 2002 Jan 18 Philips Semiconductors Package outline Plastic single-ended multi-chip package; 6 interconnections; 5 in-line leads SOT637 HE1 A E F1 Q1 R L1 bp1 F D D3 D2 L D3 A B HE SENSOR DIE POSITION centre of reading point D1 * L4 L3 L2 1 2 3 4 5 bp


    Original     		PDF OT637

    Untitled

    Abstract: No abstract text available
    Text: Package outline Plastic single-ended package; heatsink mounted; 1 mounting hole; 5-lead TO-220 lead form option SOT263B-01 E p1 A ∅p A1 q D1 mounting base D L3 L L1 R L4 m 1 L2 5 e b R w M c Q Q1 Q2 5 10 mm scale DIMENSIONS mm are the original dimensions


    Original     		PDF O-220 OT263B-01 O-220

    Untitled

    Abstract: No abstract text available
    Text: Package outline Plastic single-ended package; heatsink mounted; 1 mounting hole; 5-lead TO-220 lead form option SOT263-01 E A A1 p q D1 mounting base D L3 L L1 R L4 m 1 L2 5 e b R w M c Q Q1 Q2 5 10 mm scale DIMENSIONS mm are the original dimensions UNIT


    Original     		PDF O-220 OT263-01 O-220

    SOT827-1

    Abstract: SOT-827 sot827 030729 L227
    Text: PDF: 2003 Jul 29 Philips Semiconductors Package outline DBS27P: plastic DIL-bent-SIL special bent power package; 27 leads (lead length 6.8 mm) SOT827-1 non-concave Dh x D Eh view B: mounting base side A2 d B j E A L4 L3 L 1 L2 27 e1 Z w M bp e c Q v M e2


    Original     		PDF DBS27P: OT827-1 SOT827-1 SOT-827 sot827 030729 L227

    SOT637

    Abstract: ABP1
    Text: Package outline Philips Semiconductors Plastic single-ended multi-chip package; 6 interconnections; 5 in-line leads SOT637 HE1 E A F1 Q1 R L1 bp1 F D D3 1 D2 L D3 (1) A A HE SENSOR DIE POSITION centre of reading point D1 * B L4(1) Q1 L3 A L2 1 2 3 4 5 bp


    Original     		PDF OT637 SOT637 ABP1

    Untitled

    Abstract: No abstract text available
    Text: Package outline DBS37P: plastic DIL-bent-SIL power package; 37 leads lead length 6.8 mm SOT725-1 non-concave Dh x D Eh view B: mounting base side A2 d B j E A L4 L3 L 1 L2 37 e1 Z w M bp e c Q v M e2 m 10 20 mm scale DIMENSIONS (mm are the original dimensions)


    Original     		PDF DBS37P: OT725-1

    DBS37P

    Abstract: No abstract text available
    Text: PDF: 2002 Nov 22 Philips Semiconductors Package outline DBS37P: plastic DIL-bent-SIL power package; 37 leads lead length 6.8 mm SOT725-1 non-concave Dh x D Eh view B: mounting base side A2 d B j E A L4 L3 L 1 L2 37 e1 Z w M bp e c Q v M e2 m 10 20 mm scale


    Original     		PDF DBS37P: OT725-1 DBS37P

    Untitled

    Abstract: No abstract text available
    Text: Package outline DBS27P: plastic DIL-bent-SIL special bent power package; 27 leads (lead length 6.8 mm) SOT919-1 non-concave Dh x D Eh view B: mounting base side A2 d B j E A L4 L3 L 1 L2 27 e1 Z w M bp e c Q v M e2 m 10 20 mm scale DIMENSIONS (mm are the original dimensions)


    Original     		PDF DBS27P: OT919-1

    Untitled

    Abstract: No abstract text available
    Text: Package outline DBSMS27P: plastic dual bent surface mounted SIL power package; 27 leads SOT1154-1 L4 L3 θ2 gauge plane seating plane A3 S R 1 R 2 D y Lp1 θ1 Lp2 aaa S detail X non-concave x d A2 Dh Eh E j 27 L1 1 L2 A1 e1 e Z Q R1 10 Unit mm A A1 A2 max 4.65 0.10 4.65


    Original     		PDF DBSMS27P: OT1154-1 sot1154-1

    SOT263

    Abstract: SOT-263 sot263-01 TO-220 JEDEC
    Text: PDF: 1999 Apr 16 Philips Semiconductors Package outline Plastic single-ended package; heatsink mounted; 1 mounting hole; 5-lead TO-220 lead form option SOT263-01 E A A1 P q D1 mounting base D L4 L3 L1 R L L5 m 1 L2 5 e b w M R c Q Q1 Q2 5 10 mm scale DIMENSIONS mm are the original dimensions


    Original     		PDF O-220 OT263-01 O-220 SOT263 SOT-263 sot263-01 TO-220 JEDEC

    L3 Package

    Abstract: SOT263 TO-220 JEDEC sot263b
    Text: PDF: 2001 Jan 11 Philips Semiconductors Package outline Plastic single-ended package; heatsink mounted; 1 mounting hole; 5-lead TO-220 lead form option SOT263B-01 E p1 A ∅p A1 q D1 mounting base D L3 L1 R L L4 m 1 L2 5 e b R w M c Q Q1 Q2 5 10 mm scale DIMENSIONS mm are the original dimensions


    Original     		PDF O-220 OT263B-01 O-220 L3 Package SOT263 TO-220 JEDEC sot263b

    philips 3f3 ferrite

    Abstract: AN890 variac used as a battery charger
    Text: r ^ z j S G S -T H O M S O N 7 M« L4 9 9 0 Rffl[] g[^(Q [l[L[Igir[K]M D(gi L4 9 9 0 A PRIMARY CONTROLLER • ■ ■ ■ ■ ■ ■ . ■ . ■ ■ . ■ CURRENTT-MODE CONTROL PWM SWITCHING FREQUENCY UP TO 1 MHz LOW START-UP CURRENT < 0.45mA HIGH-CURRENT OUTPUT DRIVE SUITABLE


    OCR Scan     		PDF 100ns DIP16 DIP16 S016W L4990/L4990A DIP16) L4990 D/L4990AD S016W) philips 3f3 ferrite AN890 variac used as a battery charger

    philips 3f3 ferrite

    Abstract: AN890 transistor KT 816 dz 300 AN-890
    Text: r ^ z j S G S -T H O M S O N 7 M« L4 9 9 0 Rffl[] g[^(Q [l[L[Igir[K]M D(gi L4 9 9 0 A PRIMARY CONTROLLER • ■ ■ ■ ■ ■ ■ . ■ . ■ ■ . ■ CURRENTT-MODE CONTROL PWM SWITCHING FREQUENCY UP TO 1 MHz LOW START-UP CURRENT < 0.45mA HIGH-CURRENT OUTPUT DRIVE SUITABLE


    OCR Scan     		PDF 100ns DIP16 DIP16 S016W L4990/L4990A DIP16) L4990D/L4990AD S016W) philips 3f3 ferrite AN890 transistor KT 816 dz 300 AN-890

    transistor mark l6

    Abstract: No abstract text available
    Text: NPN EPITAXIAL SILICON TRANSISTOR KST1623L3/L4/L5/L6/L7 AMPLIFIER TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS TA=25°C C haracteristic Symbol Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Dissipation Storage Temperature


    OCR Scan     		PDF KST1623L3/L4/L5/L6/L7 OT-23 KST1623L3 KST1623L4 KST1623L5 KST1623L6 KST1623L7 transistor mark l6

    transistor A 564

    Abstract: L6 TRANSISTOR kst1623 L6 MARKING transistor L7 transistor marking l6
    Text: NPN EPITAXIAL SILICON TRANSISTOR KST1623L3/L4/L5/L6/L7 AMPLIFIER TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS TA=25t C h a ra cte ristic Sym b o l Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Dissipation


    OCR Scan     		PDF KST1623L3/L4/L5/L6/L7 OT-23 KST1623L3 KST1623L4 KST1823L5 KST1623L6 KST1623L7 KST1623L3 KST1623L4 KST1623L5 transistor A 564 L6 TRANSISTOR kst1623 L6 MARKING transistor L7 transistor marking l6

    MPSA10

    Abstract: MPSA10 equivalent transistor
    Text: SAMSUNG SEMICONDUCTOR I NC MPSA10 l4 E | 7 «,fcm Ma 0007341, 5 NPN EPITAXIAL SILICON TRANSISTOR T-29-21 AMPLIFIER TRANSISTOR • Collector-Emltter Voltage: Veto= 40V • Collector Dissipation: Pc max =625mW ABSOLUTE MAXIMUM RATINGS (Ta=25°C) Characteristic


    OCR Scan     		PDF MPSA10 625mW T-29-21 MPSA10 MPSA10 equivalent transistor

    S3C marking

    Abstract: No abstract text available
    Text: P hilips Sem iconductors bbS 3T31 0033540 N APX f lf l4 ANER Product specification PHILIPS/DISCRETE N-channel field-effect transistors PARAMETER • Low leakage level typ. 500 fA SYMBOL • High gain ±VDS drain-source voltage loss drain current • Low cut-off voltage.


    OCR Scan     		PDF BF556A BF556B BF556C BF556B 23SHt. bbS3031 S3C marking