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    L4 DIODE MARKING CODE Search Results

    L4 DIODE MARKING CODE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    L4 DIODE MARKING CODE Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    transistor 600v

    Abstract: 4n60f 4n60e 04n60 4N60 4N60 application note mosfet 4n60 4N60-E PT10M H04N60
    Text: Spec. No. : MOS200404 Issued Date : 2004.07.01 Revised Date :2010.10.14 Page No. : 1/6 HI-SINCERITY MICROELECTRONICS CORP. H04N60 Series H04N60 Series Pin Assignment Tab 3-Lead Plastic TO-263 Package Code: U Pin 1: Gate Pin 2 & Tab: Drain Pin 3: Source N-Channel Power Field Effect Transistor 600V, 4A


    Original     		PDF MOS200404 H04N60 O-263 O-220AB H04N60U, H04N60E, H04N60F transistor 600v 4n60f 4n60e 04n60 4N60 4N60 application note mosfet 4n60 4N60-E PT10M

    STPS40170CG

    Abstract: STPS40170CG-TR a2kk JESD97 STPS40170C STPS40170CT STPS40170CW l2f3
    Text: STPS40170C HIGH VOLTAGE POWER SCHOTTKY RECTIFIER Table 1: Main Product Characteristics IF AV 2 x 20 A VRRM 170 V Tj 175 °C VF(max) 0.75 V A1 K A2 K K FEATURES AND BENEFITS • ■ ■ ■ ■ ■ High junction temperature capability Low leakage current


    Original     		PDF STPS40170C STPS40170CG O-220AB STPS40170CT O-220AB, O-247, STPS40170CG STPS40170CG-TR a2kk JESD97 STPS40170C STPS40170CT STPS40170CW l2f3

    Untitled

    Abstract: No abstract text available
    Text: STH260N6F6-2 N-channel 60 V, 0.0016 Ω, 180 A H²PAK-2 STripFET VI DeepGATE™ Power MOSFET Preliminary data Features Order code VDSS RDS on max ID STH260N6F6-2 60 V < 0.002 Ω 180 A • Low gate charge ■ Very low on-resistance ■ High avalanche ruggedness


    Original     		PDF STH260N6F6-2 STH26

    4n60c

    Abstract: 4N60 application note br 4n60 4N60 transistor 342 pf mosfet 4n60 4n60e 04N60C H04N60 H04N60E
    Text: HI-SINCERITY Spec. No. : MOS200404 Issued Date : 2004.07.01 Revised Date : 2007.07.17 Page No. : 1/6 MICROELECTRONICS CORP. H04N60 Series H04N60 Series Pin Assignment Tab 3-Lead Plastic TO-263 Package Code: U Pin 1: Gate Pin 2 & Tab: Drain Pin 3: Source N-Channel Power Field Effect Transistor 600V, 4A


    Original     		PDF MOS200404 H04N60 O-263 O-220AB 10sec H04N60U, H04N60E, H04N60F 4n60c 4N60 application note br 4n60 4N60 transistor 342 pf mosfet 4n60 4n60e 04N60C H04N60E

    DIODE MARKING CODE B3

    Abstract: DIODE MARKING B4 marking B4 diode l4 marking code diode DSEP6-06BS diode B4 252 diode marking b2
    Text: DSEP6-06BS preliminary V RRM = I FAV = t rr = HiPerFRED High Performance Fast Recovery Diode Low Loss and Soft Recovery Single Diode 600 V 6A 15 ns Part number DSEP6-06BS 3 1 Marking on Product: P6QGUI Backside: cathode Features / Advantages: Applications:


    Original     		PDF DSEP6-06BS Recti10 60747and 20110915a DIODE MARKING CODE B3 DIODE MARKING B4 marking B4 diode l4 marking code diode DSEP6-06BS diode B4 252 diode marking b2

    Untitled

    Abstract: No abstract text available
    Text: STTH30L06C TURBO 2 ULTRAFAST HIGH VOLTAGE RECTIFIER Table 1: Main Product Characteristics IF AV Up to 2 x 20 A A1 VRRM 600 V A2 Tj 175°C VF (typ) 0.95 V trr (max) 55 ns K FEATURES AND BENEFITS • ■ ■ ■ A1 Ultrafast switching Low reverse current


    Original     		PDF STTH30L06C O-220AB STTH30L06CT O-247 STTH30L06CW STTH30L06,

    Untitled

    Abstract: No abstract text available
    Text: STPS30170C HIGH VOLTAGE POWER SCHOTTKY RECTIFIER Table 1: Main Product Characteristics IF AV 2 x 15 A A1 VRRM 170 V A2 Tj 175 °C VF(max) 0.75 V K A2 K FEATURES AND BENEFITS • High junction temperature capability ■ Low leakage current ■ Good trade off between leakage current and


    Original     		PDF STPS30170C O-220FPAB O-247 O-220AB STPS30170CW STPS30170CT STPS30170CFP STPS30170without

    smd diode L43

    Abstract: smd diode L44 l44 smd marking code smd diode code l4 smd diode L42 DIODE marking L4 marking L44 SOT23 L43 SMD SMD DIODE L4 L43 DIODE
    Text: Spec. No. : C302N3-H Issued Date : 2003.04.14 Revised Date : Page No. : 1/4 CYStech Electronics Corp. Small Signal Schottky double diodes BAT54N3/BAT54AN3 BAT54CN3/BAT54SN3 Description Planar silicon Schottky barrier diodes encapsulated in a SOT-23 small plastic SMD package.


    Original     		PDF C302N3-H BAT54N3/BAT54AN3 BAT54CN3/BAT54SN3 OT-23 BAT54 BAT54A BAT54C OT-23 BAT54S UL94V-0 smd diode L43 smd diode L44 l44 smd marking code smd diode code l4 smd diode L42 DIODE marking L4 marking L44 SOT23 L43 SMD SMD DIODE L4 L43 DIODE

    STTH30L06

    Abstract: STTH30L06C STTH30L06CG STTH30L06CG-TR STTH30L06CT STTH30L06CW
    Text: STTH30L06C TURBO 2 ULTRAFAST HIGH VOLTAGE RECTIFIER Table 1: Main Product Characteristics IF AV Up to 2 x 20 A A1 VRRM 600 V A2 Tj 175°C VF (typ) 0.95 V trr (max) 55 ns K FEATURES AND BENEFITS • ■ ■ ■ A1 Ultrafast switching Low reverse current


    Original     		PDF STTH30L06C O-220AB STTH30L06CT O-247 STTH30L06CW STTH30L06, STTH30L06 STTH30L06C STTH30L06CG STTH30L06CG-TR STTH30L06CT STTH30L06CW

    A2 DIODE SMD CODE MARKING

    Abstract: smd diode marking code a2 S3 marking DIODE smd diode code s3 A2 SMD CODE MARKING marking code e1 smd smd diode code l4 marking K2 diode smd schottky diode s3 - 13 DIODE smd marking A1
    Text: Spec. No. : C302S3-H Issued Date : 2004.04.13 Revised Date : Page No. : 1/4 CYStech Electronics Corp. Small Signal Schottky double diodes BAT54S3/BAT54AS3 BAT54CS3/BAT54SS3 Description Planar silicon Schottky barrier diodes encapsulated in a SOT-323 very small plastic SMD package.


    Original     		PDF C302S3-H BAT54S3/BAT54AS3 BAT54CS3/BAT54SS3 OT-323 BAT54 BAT54A BAT54C OT-323 BAT54S UL94V-0 A2 DIODE SMD CODE MARKING smd diode marking code a2 S3 marking DIODE smd diode code s3 A2 SMD CODE MARKING marking code e1 smd smd diode code l4 marking K2 diode smd schottky diode s3 - 13 DIODE smd marking A1

    l4 marking code diode

    Abstract: diode MARKING b3 DIODE 504
    Text: DSS6-0025BS preliminary V RRM = I FAV = VF = Schottky Diode High Performance Schottky Diode Low Loss and Soft Recovery Single Diode 25 V 6A 0.30 V Part number DSS6-0025BS 1 2 3 Backside: cathode Features / Advantages: Applications: Package: ● Very low Vf


    Original     		PDF DSS6-0025BS O-252 current10 60747and 20110915a l4 marking code diode diode MARKING b3 DIODE 504

    STPS30170CW

    Abstract: STPS30170C STPS30170 JESD97 STPS30170CFP STPS30170CG STPS30170CG-TR STPS30170CT 935 schottky diode
    Text: STPS30170C HIGH VOLTAGE POWER SCHOTTKY RECTIFIER Table 1: Main Product Characteristics IF AV 2 x 15 A A1 VRRM 170 V A2 Tj 175 °C VF(max) 0.75 V K A2 A2 K FEATURES AND BENEFITS • High junction temperature capability ■ Low leakage current ■ Good trade off between leakage current and


    Original     		PDF STPS30170C O-220FPAB O-247 O-220AB STPS30170CW STPS30170CT STPS30170CFP STPS30170CG STPS30170CW STPS30170C STPS30170 JESD97 STPS30170CFP STPS30170CG STPS30170CG-TR STPS30170CT 935 schottky diode

    STTH16L06CG

    Abstract: STTH16L06CFP STTH16L06CT STTH16L06C STTH16L06CG-TR STTH16L06GG-TR
    Text: STTH16L06C TURBO 2 ULTRAFAST HIGH VOLTAGE RECTIFIER Table 1: Main Product Characteristics IF AV Up to 2 x 10 A A1 VRRM 600 V A2 Tj 175°C VF (typ) 1.05 V trr (max) 35 ns K FEATURES AND BENEFITS • ■ ■ ■ A1 Ultrafast switching Low reverse recovery current


    Original     		PDF STTH16L06C O-220AB STTH16L06CT O-220FPAB STTH16L06CFP STTH16L06, STTH16L06CG STTH16L06CFP STTH16L06CT STTH16L06C STTH16L06CG-TR STTH16L06GG-TR

    Untitled

    Abstract: No abstract text available
    Text: STF1N105K3, STFW1N105K3, STP1N105K3 N-channel 1050 V, 8 Ω typ., 1.4 A SuperMESH3 Power MOSFET in TO-220FP, TO-3PF and TO-220 packages Datasheet — production data Features Order codes TAB VDS RDS on max PTOT ID 1 3 STF1N105K3 STFW1N105K3 1050 V 1 11 Ω


    Original     		PDF STF1N105K3, STFW1N105K3, STP1N105K3 O-220FP, O-220 STF1N105K3 STFW1N105K3 O-220FP O-220

    Untitled

    Abstract: No abstract text available
    Text: STF40N60M2, STFI40N60M2, STFW40N60M2 N-channel 600 V, 0.078 Ω typ., 34 A MDmesh II Plus low Qg Power MOSFETs in TO-220FP, I2PAKFP and TO-3PF packages Datasheet − production data Features Order codes VDS @ TJmax RDS on max ID 650 V 0.088 Ω 34 A STF40N60M2


    Original     		PDF STF40N60M2, STFI40N60M2, STFW40N60M2 O-220FP, STF40N60M2 STFI40N60M2 O-220FP O-281) DocID026364

    11NM50N

    Abstract: STD11NM50N STP11NM50N STF11NM50N std11nm50 11nm50 STF11NM50N st STD11N
    Text: STD11NM50N STF11NM50N, STP11NM50N N-channel 500 V, 0.4 Ω, 8.5 A MDmesh II Power MOSFET in DPAK, TO-220FP and TO-220 Features Order codes VDSS @TJmax RDS on max ID 3 1 STD11NM50N STF11NM50N STP11NM50N 3 550 V < 0.47 Ω 8.5 A DPAK 1 2 TO-220 • 100% avalanche tested


    Original     		PDF STD11NM50N STF11NM50N, STP11NM50N O-220FP O-220 STF11NM50N O-220FP 11NM50N STD11NM50N STP11NM50N STF11NM50N std11nm50 11nm50 STF11NM50N st STD11N

    stps20s100ct

    Abstract: STPS20S100CFP diode marking H2 STPS20S100C STPS20S100CR TO-220FPAB package
    Text: STPS20S100C POWER SCHOTTKY RECTIFIER Table 1: Main Product Characteristics IF AV 2 x 10 A VRRM 100 V Tj 175°C VF(max) 0.71 V A1 K A2 FEATURES AND BENEFITS • ■ ■ ■ High junction temperature capability for converters located in confined enrironment


    Original     		PDF STPS20S100C O-220AB STPS20S100CT O-220FPAB STPS20S100CFP O-220AB, O-220FPAB. stps20s100ct STPS20S100CFP diode marking H2 STPS20S100C STPS20S100CR TO-220FPAB package

    Untitled

    Abstract: No abstract text available
    Text: DLA 10 IM 800 UC advanced V RRM = I FAV = VF = High Efficiency Standard Rectifier Single Diode 800 V 10 A 1.01 V Part number 1 2 3 Marking on Product: MARLUI Backside: cathode Features / Advantages: Package: Applications: Planar passivated chips Very low leakage current


    Original     		PDF O-252 60747and 20070320a

    6P060AS

    Abstract: No abstract text available
    Text: DSEP6-06AS V RRM = I FAV = t rr = HiPerFRED High Performance Fast Recovery Diode Low Loss and Soft Recovery Single Diode 600 V 6A 20 ns Part number DSEP6-06AS 3 1 Marking on Product: 6P060AS Backside: cathode Features / Advantages: Applications: Package: ● Planar passivated chips


    Original     		PDF DSEP6-06AS 6P060AS 6-06AS 60747and 20110915a 6P060AS

    Untitled

    Abstract: No abstract text available
    Text: DLA 10 IM 800 UC advanced V RRM = I FAV = VF = High Efficiency Standard Rectifier Single Diode 800 V 10 A 1.01 V Part number DLA 10 IM 800 UC 1 2 3 Marking on Product: MARLUI Backside: cathode Features / Advantages: Applications: Package: ● Planar passivated chips


    Original     		PDF O-252 60747and 20070320a

    6-015AS

    Abstract: No abstract text available
    Text: DSS6-015AS V RRM = I FAV = VF = Schottky Diode High Performance Schottky Diode Low Loss and Soft Recovery Single Diode 150 V 6A 0.62 V Part number DSS6-015AS 1 2 3 Backside: cathode Features / Advantages: Applications: Package: ● Very low Vf ● Extremely low switching losses


    Original     		PDF DSS6-015AS O-252 6-015AS 60747and 20110915a 6-015AS

    Untitled

    Abstract: No abstract text available
    Text: EML4 / UML4N Transistors General purpose transistor isolated transistor and diode EML4 / UML4N 2SC5585 and RB521S-30 are housed independently in a EMT5 or UMT5 package. Dimensions (Unit : mm) Applications DC / DC converter Motor driver EMT5 1.6 0.5 1.0 0.5 0.5


    Original     		PDF 2SC5585 RB521S-30 200mA, 100MHz

    D1NL40

    Abstract: diode D1nl40
    Text: n - n x V 'C X -Y - Super Fast Recovery Diode Axial Diode O UTLINE D IM E N S IO N S D1NL40 Unit •mm Package I AX057 o 400V 0.9A hLO rn ±0.1 20MIN • trr5 0 n s • 5mm \d " j -20min -M - m «EPM f Marking L4 9D


    OCR Scan     		PDF D1NL40 AX057 ------------------------------------20min 20MIN J515-5 D1NL40 diode D1nl40

    AX057

    Abstract: marking code 9d D1NL4 DATE CODE FOR NITM MU diode MARKING CODE l4 marking code diode
    Text: Super Fast Recovery Diode Axial Diode Wtm D1 NL40 OUTLINE U nit-m m Package : AX057 W eight 0.19g Typ 400V 0.9A UJ Feature •ms'ix • Low Noise • trr= 5 0 n s • trr=50ns 02.6 -M - 0> Main Use • Switching Regulator • ÍM .0AJM 3 Marking Spec Code


    OCR Scan     		PDF AX057 AX057 marking code 9d D1NL4 DATE CODE FOR NITM MU diode MARKING CODE l4 marking code diode