SJPB-L4
Abstract: sanken power transistor
Text: http://www.sanken-ele.co.jp SANKEN ELECTRIC SJPB-L4 Mar. 2008 Schottky Barrier Rectifier General Description Package SJPB-L4 is a Schottky Barrier Diode, and has achieved low leakage current and low VF by selecting the best barrier metal. Applications ●DC-DC converters
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0E-01
0E-02
0E-03
0E-04
SJPB-L4
sanken power transistor
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Untitled
Abstract: No abstract text available
Text: http://www.sanken-ele.co.jp SANKEN ELECTRIC SJPB-L4 Mar. 2008 Schottky Barrier Rectifier General Description Package SJPB-L4 is a Schottky Barrier Diode, and has achieved low leakage current and low VF by selecting the best barrier metal. Applications DC-DC converters
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philips 3f3 ferrite
Abstract: AN890 variac used as a battery charger
Text: r ^ z j S G S -T H O M S O N 7 M« L4 9 9 0 Rffl[] g[^(Q [l[L[Igir[K]M D(gi L4 9 9 0 A PRIMARY CONTROLLER • ■ ■ ■ ■ ■ ■ . ■ . ■ ■ . ■ CURRENTT-MODE CONTROL PWM SWITCHING FREQUENCY UP TO 1 MHz LOW START-UP CURRENT < 0.45mA HIGH-CURRENT OUTPUT DRIVE SUITABLE
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100ns
DIP16
DIP16
S016W
L4990/L4990A
DIP16)
L4990
D/L4990AD
S016W)
philips 3f3 ferrite
AN890
variac used as a battery charger
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philips 3f3 ferrite
Abstract: AN890 transistor KT 816 dz 300 AN-890
Text: r ^ z j S G S -T H O M S O N 7 M« L4 9 9 0 Rffl[] g[^(Q [l[L[Igir[K]M D(gi L4 9 9 0 A PRIMARY CONTROLLER • ■ ■ ■ ■ ■ ■ . ■ . ■ ■ . ■ CURRENTT-MODE CONTROL PWM SWITCHING FREQUENCY UP TO 1 MHz LOW START-UP CURRENT < 0.45mA HIGH-CURRENT OUTPUT DRIVE SUITABLE
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100ns
DIP16
DIP16
S016W
L4990/L4990A
DIP16)
L4990D/L4990AD
S016W)
philips 3f3 ferrite
AN890
transistor KT 816
dz 300
AN-890
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BFU309
Abstract: No abstract text available
Text: titiS3 T31 □□E3 b f l4 H 7 P hilips Sem iconductors APX Prelim inary specification N-channel silicon field-effect transistors , BFU308/309/310 N Af1 FP PHTI TPS/DTSCRETE L71 FEATURES PIN CONFIGURATION • Low noise • Interchangeability of drain and source connections
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BFU308/309/310
MSB032
MBB114
PINNING-TO-18
00E3b
b53T31
BFU309
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S3C marking
Abstract: No abstract text available
Text: P hilips Sem iconductors bbS 3T31 0033540 N APX f lf l4 ANER Product specification PHILIPS/DISCRETE N-channel field-effect transistors PARAMETER • Low leakage level typ. 500 fA SYMBOL • High gain ±VDS drain-source voltage loss drain current • Low cut-off voltage.
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BF556A
BF556B
BF556C
BF556B
23SHt.
bbS3031
S3C marking
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L4949E
Abstract: S020L switching preregulator L4949ED L4949EP HY 915
Text: /= 7 ^ 7 #. SGS-THOM SON R!ilD»li[yiOT SWlD g L4 9 4 9 E MULTIFUNCTION VERY LOW DROP VOLTAGE REGULATOR PRODUCT PREVIEW • OPERATING DC SUPPLY VOLTAGE RANGE 5V - 28V ■ TRANSIENT SUPPLY VOLTAGE UP TO 40V ■ EXTREMELY LOW QUIESCENT CURRENT IN STANDBY MODE
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L4949E
S020L
L4949ED
L4949EP
S020L)
100mA
L4949E
S020L
switching preregulator
L4949ED
L4949EP
HY 915
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ATF-25100
Abstract: ATF25100-GP3 AT-8251 at8251
Text: HEW LETT-PACKARD/ C MP NT S b lE H EW LETT PACKARD m D • l 4 l4 7 S f l 4 ODCmSB 723 ATF-25100 (AT-8251 0.5-10 GHz Low Noise Gallium Arsenide FET Features Chip Outline • • Low Noise Figure: 0.8 dB typical at 4 GHz High Associated Gain: 14.0 dB typical at 4 GHz
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ATF-25100
AT-8251
ATF-25100
ATF25100-GP3
AT-8251
at8251
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Untitled
Abstract: No abstract text available
Text: www.fairchildsemi.com M L4 8 2 4 Pow e r Fa c t or Corre c t ion a nd PWM Cont rolle r Com bo Features General Description • Internally synchronized PFC and PWM in one IC • Low total harmonic distortion • Reduces ripple current in the storage capacitor between
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DS30004824
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8 pin ic chip 5270
Abstract: No abstract text available
Text: July 1994 PRELIMINARY Micro Linear M L4 6 1 0 R , M L 4 6 1 1 R 5V, 2-, 4-Channel Thin-Film Read/Write Circuit GENERAL DESCRIPTION FEATURES The ML461 OR/4611R is a bipolar monolithic read/write circuit designed for use with two-terminal thin-film recording heads. They provide a low noise read amplifier,
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ML461
OR/4611R
ML4610R-2CS
ML4610R-4CS
ML4611R-4CS
16-Pin
20-Pin
24-Pin
8 pin ic chip 5270
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Untitled
Abstract: No abstract text available
Text: H a rris D G 411, D G 412 C l4 1 3 S E M I C O N D U C T O R Monolithic Quad SPST CMOS Analog Switches August 1993 Features Description ON-Resistance < 35i2 Max • Low Power Consumption PD < 35^W • Fast Switching Action • toN <175ns • tgpp<145ns
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175ns
145ns
DG201A/DG202
DG411
DG211
DG212
1-800-4-HARRIS
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LF347
Abstract: LF347B LM348 ULN 8 DIP T79 LOW NOISE AMP 100n18
Text: TEXAS I N S T R 1ÖE D LIN /IN T FC ö li t i l 7 H 4 GQ77374 T LF347, LF347B WIDE-BANDWIDTH QUAD JFET-INPUT OPERATIONAL AMPLIFIERS D2997, M A R C H 1987 D. J, OR N PACKAGE (TOP VIEW) (o Low Input Noise Current Typically 0 .0 1 pA/VHz L 1 V J l4 U O U T )
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U17H4
GQ77374
LF347,
LF347B
D2997,
T-79-/5
LM348
V01/V02
LF347
LF347B
LM348
ULN 8 DIP
T79 LOW NOISE AMP
100n18
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HP5082-2835
Abstract: HP50822835 hp5082 B1B11 step 7 micro win MP7685KD ic cmos 4090 MP7685 mpop02
Text: M EOE b O ci 7 4 l4 4 D MICRO POWER SYSTEMS S CMOS 11-Bit Monolithic A/D Flash Converter M IC R O POWER SYSTEMS FEATURES • • • • 0DG3SbS MP7685 IN C PIN CONFIGURATION 11-BIT RESOLUTION 1 MHz Sampling Rate Single Supply Voltage 3 to 6.5V Low Power CMOS (100 mW max.)
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11-Bit
MP7685
150ft,
160ft
100ft
430ft
HP5082-2835)
750ft
HP5082-2835
HP50822835
hp5082
B1B11
step 7 micro win
MP7685KD
ic cmos 4090
MP7685
mpop02
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74HL33953D
Abstract: 74HL33953DB
Text: N A P C /P H ILIP S S E niC O N » b3E D • b t i S 3 cì B l4 G 0 f l M D b 3 Philips Semiconductors T3T Objective Specification Octal registered transceiver; 3-state; inverting FEATURES • • • • DESCRIPTION The 74HL33953 is a high-performance, low-power,
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74HL33953
74HL33953
D0fl40b7
74HL33953D
74HL33953DB
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Untitled
Abstract: No abstract text available
Text: LF347, LF347B WIDE BANDWIDTH QUAD JFE T INPUT OPERATIONAL AMPLIFIERS D 2 9 9 7 , M AR CH 198 7 Low Input Bias Current Typically 50 p A D, J. OR N P A C K A G E T O P V IE W Typically 0.01 pA/Vfiz (outC 1 U l4 Dout) <IN- C 2 13 □ i n - S A M P #1 (lN + C 3
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LF347,
LF347B
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Untitled
Abstract: No abstract text available
Text: July 1 996 P R E LIM IN AR Y MgL Micro Linear ML4751 Adjustable Output Low Current Boost Regulator G EN ERA L D ESCRIPTIO N FEATURES The M L4 7 5 1 is a lo w p o w e r boost re g u la to r designed fo r D C to D C co n ve rsio n in 1 to 3 ce ll battery p o w e re d
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ML4751
L4751
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NJG1130KA1
Abstract: HK1005 Power AMP P1dB 35dBm
Text: NJG1130KA1 GPS LOW NOISE AMPLIFIER GaAs MMIC ! GENERAL DESCRIPTION NJG1130KA1 is a low noise amplifier GaAs MMIC designed for GPS application at the 1.575GHz. The LNA offers excellent low noise figure, high linearity and low current consumption. Two stage amplifier and ESD protection circuit are integrated
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NJG1130KA1
NJG1130KA1
575GHz.
575GHz
HK1005
Power AMP P1dB 35dBm
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Untitled
Abstract: No abstract text available
Text: NJG1130KA1 GNSS LOW NOISE AMPLIFIER GaAs MMIC • GENERAL DESCRIPTION NJG1130KA1 is a low noise amplifier GaAs MMIC designed for GNSS Global Navigation Satellite Systems . The LNA offers excellent low noise figure, high linearity and low current consumption.
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NJG1130KA1
NJG1130KA1
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njg1130ka1
Abstract: No abstract text available
Text: NJG1130KA1 GPS LOW NOISE AMPLIFIER GaAs MMIC • GENERAL DESCRIPTION NJG1130KA1 is a low noise amplifier GaAs MMIC designed for GPS application at the 1.575GHz. The LNA offers excellent low noise figure, high linearity and low current consumption. Two stage amplifier and ESD protection circuit are integrated
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NJG1130KA1
NJG1130KA1
575GHz.
575GHz
575GHz
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Untitled
Abstract: No abstract text available
Text: Document Number: MML20242H Rev. 0, 10/2012 Freescale Semiconductor Technical Data Enhancement Mode pHEMT Technology E-pHEMT MML20242HT1 Low Noise Amplifier The MML20242H is a 2-stage low noise amplifier (LNA) with active bias and high isolation for use in cellular infrastructure applications. It is designed
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MML20242H
MML20242HT1
MML20242H
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MML20242H
Abstract: RO4350B Rogers RO4350B microstrip
Text: Freescale Semiconductor Technical Data Document Number: MML20242H Rev. 0, 10/2012 Enhancement Mode pHEMT Technology E-pHEMT MML20242HT1 Low Noise Amplifier The MML20242H is a 2-stage low noise amplifier (LNA) with active bias and high isolation for use in cellular infrastructure applications. It is designed
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MML20242H
MML20242HT1
MML20242H
RO4350B
Rogers RO4350B microstrip
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3802A
Abstract: mn3801 mn3106 N8033 MN3801S 8028A N3801 N3858 N3802 mn8040
Text: MOS LSIs • CCD Delay Line Series 1 Category Type No. Clock System Stages Frequency Signal Area ( —3dB) COM Depth Quasi single power supply 5V, (6V) Supply voltage N M s 5V Supply voltage 12V Quasi single power supply 5V. (9V) Low EMI Low clock noise
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N3801/S
N3802A/S
N3803/S
MN8040
400mVp-p
200mVp-p
200mVp-p
200mW
300mW
3802A
mn3801
mn3106
N8033
MN3801S
8028A
N3801
N3858
N3802
mn8040
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MH88210
Abstract: A46 1336 P1N50 c2328
Text: •V II I E L . Hybrid DTMF Receiver System Features • • • • • • • • Up to 40dB Dynamic Range Single Power Supply No External Components Needed Direct Connection To Telephone Line Exceptional Talk Off 14dB Signal to Noise Ratio A cquisition Time Adjustable Down to 10ms
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h88210
MHSB210
MH88210
MH88210
A46 1336
P1N50
c2328
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LL1608-F2N7S
Abstract: ATF34143 ATF-34143 601706 atf 36163 Low Noise Amplifier fet amplifier schematic schematic diagram DC amplifier 0805CS ATF-35143 ATF-36163
Text: High Intercept Low Noise Amplifiers for 1500 MHz through 2500 MHz using the ATF-34143 Low Noise PHEMT Application Note 1175 Introduction Biasing Options and Source Grounding Agilent Technologies’ ATF-34143 is a low noise PHEMT designed for use in low cost commercial applications in
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ATF-34143
ATF-34143
SC-70
OT-343)
AV01-xxxxEN
LL1608-F2N7S
ATF34143
601706
atf 36163 Low Noise Amplifier
fet amplifier schematic
schematic diagram DC amplifier
0805CS
ATF-35143
ATF-36163
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