MARKING L31 SMD
Abstract: No abstract text available
Text: IS / IECQC 700000 IS / IECQC 750100 IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited An IS/ISO 9002 and IECQ Certified Manufacturer SILICON PLANAR EPITAXIAL HIGH-SPEED DIODE 3 MARKING:- L31 Pin Configuration 2 1 BAV23S SOT-23 1 = ANODE 2 = CATHODE
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BAV23S
OT-23
BAV23S
C-120
MARKING L31 SMD
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SMD L31
Abstract: MARKING L31 SMD SOT-23 marking l31 BAV23S l31 BAV23S marking L31 SOT23
Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SILICON PLANAR EPITAXIAL HIGH-SPEED DIODE 3 MARKING:- L31 Pin Configuration 2 1 BAV23S SOT-23 1 = ANODE 2 = CATHODE 3 = ANODE/ CATHODE DESCRIPTION BAV23S Consists of Two Planar Epitaxial High-Speed Diodes in One Microminiature Plastic Envelope
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BAV23S
OT-23
BAV23S
C-120
SMD L31
MARKING L31 SMD
SOT-23 marking l31
BAV23S l31
marking L31 SOT23
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MARKING L31 SMD
Abstract: No abstract text available
Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SILICON PLANAR EPITAXIAL HIGH-SPEED DIODE 3 MARKING:- L31 Pin Configuration 2 1 BAV23S SOT-23 1 = ANODE 2 = CATHODE 3 = ANODE/ CATHODE DESCRIPTION BAV23S Consists of Two Planar Epitaxial High-Speed Diodes in One Microminiature Plastic Envelope
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Original
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BAV23S
OT-23
BAV23S
C-120
MARKING L31 SMD
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SMD L31
Abstract: smd diode marking 9 ba MARKING- L31 BAV23S l31 BAV23S MARKING L31 SMD
Text: Continental Device India Limited An ISO/TS16949 and ISO 9001 Certified Company SILICON PLANAR EPITAXIAL HIGH-SPEED DIODE 3 MARKING:- L31 Pin Configuration 2 1 BAV23S SOT-23 1 = ANODE 2 = CATHODE 3 = ANODE/ CATHODE DESCRIPTION BAV23S Consists of Two Planar Epitaxial High-Speed Diodes in One Microminiature Plastic Envelope
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Original
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ISO/TS16949
BAV23S
OT-23
BAV23S
C-120
SMD L31
smd diode marking 9 ba
MARKING- L31
BAV23S l31
MARKING L31 SMD
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MARKING L31 SMD
Abstract: BAV23S l31
Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SILICON PLANAR EPITAXIAL HIGH-SPEED DIODE 3 MARKING:- L31 Pin Configuration 2 1 BAV23S SOT-23 1 = ANODE 2 = CATHODE 3 = ANODE/ CATHODE DESCRIPTION BAV23S Consists of Two Planar Epitaxial High-Speed Diodes in One Microminiature Plastic Envelope
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Original
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BAV23S
OT-23
BAV23S
C-120
MARKING L31 SMD
BAV23S l31
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smd transistor l32
Abstract: SMD EZ 648 001aan207 BLF0510H6600P
Text: BLF0510H6600P Power LDMOS transistor Rev. 1 — 9 October 2012 Objective data sheet 1. Product profile 1.1 General description A 600 W LDMOS RF power transistor for transmitter applications and industrial applications. The excellent ruggedness of this device makes it ideal for digital and analog
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BLF0510H6600P
powe11
smd transistor l32
SMD EZ 648
001aan207
BLF0510H6600P
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SMD EZ 648
Abstract: smd transistor l32 smd transistor L33 smd transistor l31 J2151 J15-12
Text: BLF988; BLF988S Power LDMOS transistor Rev. 1 — 9 October 2012 Objective data sheet 1. Product profile 1.1 General description A 600 W LDMOS RF power transistor for transmitter applications and industrial applications. The excellent ruggedness of this device makes it ideal for digital and analog
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BLF988;
BLF988S
BLF988
SMD EZ 648
smd transistor l32
smd transistor L33
smd transistor l31
J2151
J15-12
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Untitled
Abstract: No abstract text available
Text: BLF988; BLF988S Power LDMOS transistor Rev. 2 — 1 August 2013 Product data sheet 1. Product profile 1.1 General description A 600 W LDMOS RF power transistor for transmitter applications and industrial applications. The excellent ruggedness of this device makes it ideal for digital and analog
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BLF988;
BLF988S
BLF988
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smd transistor L33
Abstract: SMD l33 Transistor transistor smd l33 BLF879P smd transistor l32 2663 transistor j337 IEC C20 dimension J17-15 J0582
Text: BLF879P UHF power LDMOS transistor Rev. 1 — 23 August 2011 Product data sheet 1. Product profile 1.1 General description A 500 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications. The excellent ruggedness of this device makes it ideal for digital and analog
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BLF879P
771-BLF879P112
BLF879P
smd transistor L33
SMD l33 Transistor
transistor smd l33
smd transistor l32
2663 transistor
j337
IEC C20 dimension
J17-15
J0582
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UT-090C-25
Abstract: smd transistor l32 NXP amplifier EZ 711 253 J1072 ST EZ 711 253
Text: BLU6H0410L-600P; BLU6H0410LS-600P Power LDMOS transistor Rev. 1 — 26 April 2012 Product data sheet 1. Product profile 1.1 General description A 600 W LDMOS RF power transistor for radar transmitter applications and industrial applications in the frequency range of 400 MHz to 900 MHz.
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BLU6H0410L-600P;
BLU6H0410LS-600P
BLU6H0410L-600P
6H0410LS-600P
UT-090C-25
smd transistor l32
NXP amplifier
EZ 711 253
J1072
ST EZ 711 253
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SMD l33 Transistor
Abstract: No abstract text available
Text: BLU6H0410L-600P; BLU6H0410LS-600P Power LDMOS transistor Rev. 2 — 12 July 2013 Product data sheet 1. Product profile 1.1 General description A 600 W LDMOS RF power transistor for radar transmitter applications and industrial applications in the frequency range of 400 MHz to 900 MHz.
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BLU6H0410L-600P;
BLU6H0410LS-600P
BLU6H0410L-600P
6H0410LS-600P
SMD l33 Transistor
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Untitled
Abstract: No abstract text available
Text: BLF10H6600P; BLF10H6600PS Power LDMOS transistor Rev. 2 — 20 June 2013 Product data sheet 1. Product profile 1.1 General description A 600 W LDMOS RF power transistor for transmitter applications and industrial applications. The excellent ruggedness of this device makes it ideal for digital and analog
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BLF10H6600P;
BLF10H6600PS
BLF10H6600P
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smd transistor L33
Abstract: dvbt transmitter UT-090C-25 dvb-t2 SMD l33 Transistor
Text: BLF879P UHF power LDMOS transistor Rev. 1 — 23 August 2011 Product data sheet 1. Product profile 1.1 General description A 500 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications. The excellent ruggedness of this device makes it ideal for digital and analog
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BLF879P
smd transistor L33
dvbt transmitter
UT-090C-25
dvb-t2
SMD l33 Transistor
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smd transistor l31
Abstract: No abstract text available
Text: BLF888A; BLF888AS UHF power LDMOS transistor Rev. 3 — 30 August 2011 Product data sheet 1. Product profile 1.1 General description A 600 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications. The excellent ruggedness of this device makes it ideal for digital and analog
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BLF888A;
BLF888AS
BLF888A
smd transistor l31
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BLF888A
Abstract: SMD l33 Transistor smd transistor L33 dvb-t2 ST EZ 711 253 BLF888AS smd transistor l32 UT-090C-25 L33 SMD transistor smd l33
Text: BLF888A; BLF888AS UHF power LDMOS transistor Rev. 2 — 1 March 2011 Preliminary data sheet 1. Product profile 1.1 General description A 600 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications. The excellent ruggedness of this device makes it ideal for digital and analog
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BLF888A;
BLF888AS
BLF888A
SMD l33 Transistor
smd transistor L33
dvb-t2
ST EZ 711 253
BLF888AS
smd transistor l32
UT-090C-25
L33 SMD
transistor smd l33
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Untitled
Abstract: No abstract text available
Text: BLF888B; BLF888BS UHF power LDMOS transistor Rev. 2 — 12 July 2013 Product data sheet 1. Product profile 1.1 General description A 650 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications. The excellent ruggedness of this device makes it ideal for digital and analog
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BLF888B;
BLF888BS
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Untitled
Abstract: No abstract text available
Text: BLF888A; BLF888AS UHF power LDMOS transistor Rev. 4 — 12 July 2013 Product data sheet 1. Product profile 1.1 General description A 600 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications. The excellent ruggedness of this device makes it ideal for digital and analog
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BLF888A;
BLF888AS
narrow15
BLF888A
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BLF888B
Abstract: smd transistor L33 Technical Specifications of DVB-T2 Transmitter
Text: BLF888B; BLF888BS UHF power LDMOS transistor Rev. 1 — 17 October 2011 Product data sheet 1. Product profile 1.1 General description A 650 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications. The excellent ruggedness of this device makes it ideal for digital and analog
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BLF888B;
BLF888BS
BLF888B
smd transistor L33
Technical Specifications of DVB-T2 Transmitter
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Untitled
Abstract: No abstract text available
Text: BLF888A; BLF888AS UHF power LDMOS transistor Rev. 5 — 4 November 2013 Product data sheet 1. Product profile 1.1 General description A 600 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications. The excellent ruggedness of this device makes it ideal for digital and analog
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BLF888A;
BLF888AS
BLF888A
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smd transistor L33
Abstract: UT-090C-25 BLF888A L33 SMD PAR ofdm SMD l33 Transistor 800B 800R BLF888AS C1210X475K5RAC-TU
Text: BLF888A; BLF888AS UHF power LDMOS transistor Rev. 1 — 21 September 2010 Objective data sheet 1. Product profile 1.1 General description A 600 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications. The excellent ruggedness of this device makes it ideal for digital and analog
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BLF888A;
BLF888AS
BLF888A
smd transistor L33
UT-090C-25
L33 SMD
PAR ofdm
SMD l33 Transistor
800B
800R
BLF888AS
C1210X475K5RAC-TU
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smd transistor L33
Abstract: transistor smd l33 ttf 103 english SMD l32 Transistor SMD l33 Transistor 900 mhz av transmitter dvb-t2
Text: BLF879P; BLF879PS UHF power LDMOS transistor Rev. 2 — 25 July 2012 Product data sheet 1. Product profile 1.1 General description A 500 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications. The excellent ruggedness of this device makes it ideal for digital and analog
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BLF879P;
BLF879PS
BLF879P
smd transistor L33
transistor smd l33
ttf 103 english
SMD l32 Transistor
SMD l33 Transistor
900 mhz av transmitter
dvb-t2
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MARKING L31 SMD
Abstract: No abstract text available
Text: SIEMENS BAR 64-02W Silicon PIN Diode • High voltage current controlled RF resistor for RF attenuator and switches • Frequency range above 1 MHz • Low resistance and short carrier lifetime • Very low inductance • For frequencies up to 3 GHz • Extremely small plastic SMD package
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4-02W
Q62702-A1215
SCD-80
flE35fc
01EDEEE
100MHz
fl235b05
MARKING L31 SMD
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DIODE smd marking A7p
Abstract: smd code A4p SOT23 marking A7p sot23 a4p A7p smd smd code A7p SMD L31 sot143 marking code JTp smd A7p P5D SMD
Text: SMD Switching Diodes 11 SMD® Switching Diodes Description Mechanical Data Philips Components diodes for switching applications combine the highest quality standards with state-of-the-art production equipment to fulfill the need for generic, low-cost devices. These switching diodes offer a broad range of cur
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PMBD2836
PMBD2837
PMBD2838
PMBD6050
PMBD6100
PMBD7000
OT-23
OT-143
OT-223
DIODE smd marking A7p
smd code A4p
SOT23 marking A7p
sot23 a4p
A7p smd
smd code A7p
SMD L31
sot143 marking code JTp
smd A7p
P5D SMD
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smd transistor l32
Abstract: SMD Transistor SAs transistor SMD t30 sas smd transistor SMD l32 Transistor SMD L31 SMD CAPACITOR L29 SMD Transistor t30 SMD electrolytic capacitor SMD CAPACITOR L27
Text: Philips Semiconductors Product specification UHF push-pull power transistor BLV945B FEATURES DESCRIPTION • Double internal input matching for easy matching and high gain Two NPN silicon planar epitaxial transistors in push-pull configuration, intended for linear common emitter
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BLV945B
OT324
OT324
7110fl2fc.
OT324.
ocn23ia
smd transistor l32
SMD Transistor SAs
transistor SMD t30
sas smd transistor
SMD l32 Transistor
SMD L31
SMD CAPACITOR L29
SMD Transistor t30
SMD electrolytic capacitor
SMD CAPACITOR L27
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