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    L3 SOT223 Search Results

    L3 SOT223 Datasheets Context Search

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    SY68730ZC

    Abstract: MIC29302BT SY68730 sy10s897 0343a KS8721BL Unisem tsmc cmos tsmc cmos 0.35 KSZ8695PX
    Text: Autoclave Pressure Pot Test + 121C / 15 PSIG (With Pre-con 3X Reflow ) MSL Pkg Lds Device D/C Process Qty Hours Rej Assembler L3 L3 L3 L3 BGA BGA BGA BGA 289 289 289 289 KS8695PX KS8695PX KS8695PX KSZ8695PX 0407 0421A 0417A 0452A TSMC .18 TSMC .18 TSMC .18


    Original     		PDF KS8695PX KSZ8695PX KS8721BL KS8995M KS8995X KS8995E SY68730ZC MIC29302BT SY68730 sy10s897 0343a KS8721BL Unisem tsmc cmos tsmc cmos 0.35 KSZ8695PX

    sy10s897jc

    Abstract: cmos tsmc 0.18 A103267 0.18 tsmc BCD sy10s897 MIC29300BU BGA289 Unisem MIC2287 SPN860003
    Text: EXTENDED TEMPERATURE CYCLE Ta Delta = -65C to +150C MSL Pkg Lds Device D/C Process Qty Cyc. L3 BGA 289 KS8695PX 0421A L3 BGA 289 KS8695PX 0407 L1 L1 P.DIP P.DIP 24 40 MIC59P50 MIC10937P L2 L2 L2 L2 L2 L2 L2 L2 L2 L2 L2 L2 L2 L2 L2 L2 L2 L2 L2 L2 L2 L2 L2 L2


    Original     		PDF KS8695PX MIC59P50 MIC10937P MIC2214PM MIC2198 SY88953L MIC2550 sy10s897jc cmos tsmc 0.18 A103267 0.18 tsmc BCD sy10s897 MIC29300BU BGA289 Unisem MIC2287 SPN860003

    TP-LINK

    Abstract: smd r4b DM9331 DM9331AE SMD r1b DM9331A tplink V23818 6.8k SOT R23
    Text: 8 7 6 5 4 3 2 1 L5 FOR 3.3V FIBER MODULE L3 FOR 5V FIBER MODULE DVDD L5 1 2.2uH/SMD1812 +5V L3 1 2.2uH/SMD1812 FOR DM9331A ONLY AUTO LOOP-BACK TEST DVDD SW1 1 FULL D RA2 1 2 1 4 SW1_2 SW1_5 SW1_11 SW1_8 8 7 6 5 R1B R2B R3B R4B RESET# 50MHZ FX_RXDV R19 6.8K


    Original     		PDF 2uH/SMD1812 DM9331A 50MHZ TP-LINK smd r4b DM9331 DM9331AE SMD r1b tplink V23818 6.8k SOT R23

    Cystek

    Abstract: No abstract text available
    Text: CYStech Electronics Corp. SOT-223 Dimension A Marking: B C 1 2 3 D E F H G a1 I a2 3-Lead SOT-223 Plastic Surface Mounted Package CYStek Package Code: L3 *: Typical Inches Min. Max. 0.1142 0.1220 0.2638 0.2874 0.1299 0.1457 0.0236 0.0315 *0.0906 0.2480 0.2638


    Original     		PDF OT-223 UL94V-0 Cystek

    BFG198

    Abstract: microstripline
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BFG198 NPN 8 GHz wideband transistor Product specification 1995 Sep 12 NXP Semiconductors Product specification NPN 8 GHz wideband transistor DESCRIPTION BFG198 PINNING NPN planar epitaxial transistor in a plastic SOT223 envelope, intended


    Original     		PDF BFG198 OT223 MSB002 OT223. R77/03/pp14 BFG198 microstripline

    PowerMOS Transistors

    Abstract: 075E05 MS-012AA SO24 SSOP16 SSOP24
    Text: Philips Semiconductors PowerMOS transistors Package outlines PACKAGE OUTLINES Package SOT23 SOT54 TO-92 SOT54variant (TO-92variant) SOT78 (TO-220AB) SOT89 SOT96-1 (SO8) SOT137-1 (SO24) SOT186 (TO-220 exposed tabs) SOT186A (TO-220) SOT223 SOT226 (low-profile TO-220)


    Original     		PDF OT54variant O-92variant) O-220AB) OT96-1 OT137-1 OT186 O-220 OT186A O-220) OT223 PowerMOS Transistors 075E05 MS-012AA SO24 SSOP16 SSOP24

    Untitled

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS DAT BFG198 NPN 8 GHz wideband transistor Product specification 1995 Sep 12 NXP Semiconductors Product specification NPN 8 GHz wideband transistor DESCRIPTION BFG198 PINNING NPN planar epitaxial transistor in a plastic SOT223 envelope, intended


    Original     		PDF BFG198 OT223 MSB002 OT223. R77/03/pp14

    r1601

    Abstract: SOT223 MARKING L5 thn6601b
    Text: Specification THN6601B NPN SiGe RF TRANSISTOR Unit in mm SOT223 □ Applications 6.5 - UHF and VHF wide band amplifier 3.0 4 - High gain bandwidth product 7.0 3.5 □ Features fT = 7 GHz - High power gain 1 |S21|2 = 7 dB @ VCE = 5 V, IC = 100 mA, f = 1 GHz


    Original     		PDF THN6601B OT223 r1601 SOT223 MARKING L5 thn6601b

    Untitled

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS DAT BFG135 NPN 7GHz wideband transistor Product specification 1995 Sep 13 NXP Semiconductors Product specification NPN 7GHz wideband transistor DESCRIPTION BFG135 PINNING NPN silicon planar epitaxial transistor in a plastic SOT223 envelope,


    Original     		PDF BFG135 OT223 MSB002 R77/03/pp16

    bfg135 application note

    Abstract: bfg135 bfg135sot223 BFG135 amplifier TRANSISTOR GENERAL DIGITAL L6 BFG135,115
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BFG135 NPN 7GHz wideband transistor Product specification 1995 Sep 13 NXP Semiconductors Product specification NPN 7GHz wideband transistor DESCRIPTION BFG135 PINNING NPN silicon planar epitaxial transistor in a plastic SOT223 envelope,


    Original     		PDF BFG135 OT223 BFG135 MSB002 OT223. R77/03/pp16 771-BFG135-T/R bfg135 application note bfg135sot223 BFG135 amplifier TRANSISTOR GENERAL DIGITAL L6 BFG135,115

    BFG135 amplifier

    Abstract: SC7313 BFG135 bfg135 application note MBB298
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BFG135 NPN 7GHz wideband transistor Product specification 1995 Sep 13 NXP Semiconductors Product specification NPN 7GHz wideband transistor DESCRIPTION BFG135 PINNING NPN silicon planar epitaxial transistor in a plastic SOT223 envelope,


    Original     		PDF BFG135 OT223 MSB002 R77/03/pp16 BFG135 amplifier SC7313 BFG135 bfg135 application note MBB298

    ATML

    Abstract: ATML U 0420g MIC5205M5 ATML H Unisem 0116E ATML 28 SPN860003 MIC2211
    Text: High Temp Bias Moisture Life Test TA = 85C / 85%RH at rated voltage or Highly Accelerated Stress Test HAST +131C / 85%RH MSL Pkg Lds Device D/C Process L2 L2 L2 L2 L2 L2 L2 L2 L2 L2 L2 L2 L2 L2 L2 L2 L2 L2 L2 L2 L2 L2 L2 L2 L2 L2 L2 L2 L2 6 6 6 10 10 10 10


    Original     		PDF 0144B 0207B 0217B 0219B 0245B 0252C 0307E 0321D 0321E SY88923KC ATML ATML U 0420g MIC5205M5 ATML H Unisem 0116E ATML 28 SPN860003 MIC2211

    TO220 land pattern

    Abstract: 1122 sot-223 AP1122 sot89 marking JB
    Text: AP1122 1A Low Dropout Positive Regulator „ Features „ General Description - 1.3V maximum dropout at full load current - Fixed 1.2V+ 2% output voltage - Fast transient response - Output current limiting - Built-in thermal shutdown - Good noise rejection - Pb-Free Packages: SOT223, TO263, TO252,


    Original     		PDF AP1122 AP1122 TO220 land pattern 1122 sot-223 sot89 marking JB

    1122 sot-223

    Abstract: AP1122
    Text: AP1122 1A Low Dropout Positive Regulator „ Features „ General Description - 1.3V maximum dropout at full load current - Fixed 1.2V+ 2% output voltage - Fast transient response - Output current limiting - Built-in thermal shutdown - Good noise rejection - Pb-Free Packages: SOT223, TO263, TO252,


    Original     		PDF AP1122 AP1122 1122 sot-223

    bfg97

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS DAT BFG97 NPN 5 GHz wideband transistor Product specification September 1995 NXP Semiconductors Product specification NPN 5 GHz wideband transistor DESCRIPTION BFG97 PINNING NPN planar epitaxial transistor mounted in a plastic SOT223


    Original     		PDF BFG97 OT223 BFG31. MSB002 OT223. R77/02/pp16 bfg97

    regulator 17-33

    Abstract: 1117-3.3 17-33 sot89
    Text: AP1117 1A Low Dropout Positive Adjustable or Fixed-Mode Regulator „ Features „ General Description - 1.4V maximum dropout at full load current - Fast transient response - Output current limiting - Built-in thermal shutdown - Packages: SOT223, TO263, TO252, TO220,


    Original     		PDF AP1117 OT223, AP1117 regulator 17-33 1117-3.3 17-33 sot89

    BFG35

    Abstract: TRANSISTOR FQ BFG35 amplifier BHS111 npn 2222 transistor TRANSISTOR NPN c4 nf C2570
    Text: Philips Semiconductors Product specification NPN 4 GHz wideband transistor DESCRIPTION BFG35 PINNING NPN planar epitaxial transistor mounted in a plastic SOT223 envelope, intended for wideband amplifier applications. It features high output voltage capabilities.


    OCR Scan     		PDF BFG35 OT223 OT223. MSA035 TRANSISTOR FQ BFG35 amplifier BHS111 npn 2222 transistor TRANSISTOR NPN c4 nf C2570

    npn 2222 transistor

    Abstract: BFG198 MS80 din 45325 2222 TRANSISTOR NPN Philips 2222 114 capacitor 2222 851
    Text: Philips Semiconductors Product specification NPN 8 GHz wideband transistor DESCRIPTION BFG198 PINNING NPN planar epitaxial transistor in a plastic SOT223 envelope, intended for wideband amplifier applications. The device features a high gain and excellent output voltage capabilities.


    OCR Scan     		PDF BFG198 OT223 7110fl2b MSA035 OT223. npn 2222 transistor BFG198 MS80 din 45325 2222 TRANSISTOR NPN Philips 2222 114 capacitor 2222 851

    BFG35 amplifier

    Abstract: No abstract text available
    Text: Philips Semiconductors Product specification NPN 4 GHz wideband transistor DESCRIPTION BFG35 PINNING NPN planar epitaxial transistor mounted in a plastic SOT223 envelope, intended for wideband amplifier applications. It features high output voltage capabilities.


    OCR Scan     		PDF OT223 I3FG55. BFG35 OT223. MBB364 BFG35 amplifier

    Philips 2222 050 capacitor

    Abstract: No abstract text available
    Text: Philips Semiconductors Product specification NPN 7GHz wideband transistor DESCRIPTION BFG135 PINNING NPN silicon planar epitaxial transistor in a plastic SOT223 envelope, intended for wideband amplifier applications. The small emitter structures, with integrated


    OCR Scan     		PDF BFG135 OT223 MSB002 OT223. 711062b 110fi2b 711Da2b Philips 2222 050 capacitor

    BFG135 power amplifier for 900Mhz

    Abstract: BFG135 amplifier BFG135 A amplifier bfg135 BFG135 TRANSISTOR MBB300 BFG135 - BFG135 microstripline npn 2222 transistor power amplifier specifications at 900Mhz
    Text: Philips Semiconductors Product specification NPN 7GHz wideband transistor DESCRIPTION BFG135 PINNING NPN silicon planar epitaxial transistor in a plastic SOT223 envelope, intended for wideband amplifier applications. The small emitter structures, with integrated


    OCR Scan     		PDF BFG135 OT223 711Qfl2ti 7110fl2b BFG135 BFG135 power amplifier for 900Mhz BFG135 amplifier BFG135 A amplifier BFG135 TRANSISTOR MBB300 BFG135 - BFG135 microstripline npn 2222 transistor power amplifier specifications at 900Mhz

    NT 407 F TRANSISTOR

    Abstract: Philips CD 303 2222 595 npn 2222 transistor BFG198 MS8002 0450 7N 2222 443 TRANSISTOR D 471 MRA transistor
    Text: Philips Sem iconductors • N bbS3R31 AMER 0024SSb 7bS H IA P X P H IL IP S /D IS C R E T E b7E Product specification D NPN 8 GHz wideband transistor DESCRIPTION BFG198 PINNING NPN planar epitaxial transistor in a plastic SOT223 envelope, intended for wideband simplifier applications.


    OCR Scan     		PDF BFG198 OT223 MS8002 OT223. NT 407 F TRANSISTOR Philips CD 303 2222 595 npn 2222 transistor BFG198 MS8002 0450 7N 2222 443 TRANSISTOR D 471 MRA transistor

    MB87S

    Abstract: No abstract text available
    Text: • bbS3R31 0 0 2 ^ 5 b 7bS « A P X “ N AUER PHILIPS/DISCRETE b7E D NPN 8 GHz wideband transistor DKT c ^ Philips Semiconductors DESCRIPTION Product specification BFG198 PINNING NPN planar epitaxial transistor in a plastic SOT223 envelope, intended for wideband amplifier applications.


    OCR Scan     		PDF bbS3R31 BFG198 OT223 MB87S

    Untitled

    Abstract: No abstract text available
    Text: nu. . 0 . J Philips Semiconductors • ^53=131 0 0 2 ^ 2 3 21b « A P X " n AMER PHILIPS/DISCRETE NPN 7 GHz wideband transistor DESCRIPTION Product specification L7E T> BFG135 PINNING NPN silicon planar epitaxial transistor in a plastic SOT223 envelope, intended for wideband


    OCR Scan     		PDF BFG135 OT223