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    L2SB1197KRLT1 Search Results

    L2SB1197KRLT1 Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    L2SB1197KRLT1 Leshan Radio Company Low Frequency Transistor PNP Silicon Original PDF
    L2SB1197KRLT1G Leshan Radio Company Low Frequency Transistor PNP Silicon Original PDF

    L2SB1197KRLT1 Datasheets Context Search

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    Untitled

    Abstract: No abstract text available
    Text: LRC LESHAN RADIO COMPANY,LTD. Low Frequency Transistor Features • Pb−Free Package May be Available. The G−Suffix Denotes a Pb−Free Lead Finish L2SB1197KRLT1 3 COLLECTOR L2SB1197KQLT1 1 BASE 2 EMITTER 3 FAbsolute maximum ratings Ta = 25_C 1 2 SOT– 23


    Original     		PDF L2SB1197KRLT1 L2SB1197KQLT1 L2SB1197KRLT1 L2SB1197KQLT1 L2SB1197K OT-23 3000/Tape

    2x062h

    Abstract: gk105 1SS216 GK104 SMD Transistors w06 D20SB80 SMD marking 5As D25SB80 LRB706F-40T1G 2x062
    Text: Leshan Radio Company, Ltd. 2008 PRODUCTS CATALOGUE 目 录 CONTENT 开关二极管 SWITCHING DIODES. 1 1. SOD–923 Surface Mount Switching Diodes. 1


    Original     		PDF ZMM22 ZMM24 ZMM27 ZMM43 ZMM47 2x062h gk105 1SS216 GK104 SMD Transistors w06 D20SB80 SMD marking 5As D25SB80 LRB706F-40T1G 2x062

    Untitled

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. Low Frequency Transistor L2SB1197KQLT1G Series PNP Silicon FEATURE 3 ƽHigh current capacity in compact package. IC = í0.8A. 1 ƽEpitaxial planar type. ƽNPN complement: L2SD1781K 2 ƽ We declare that the material of product compliance with RoHS requirements.


    Original     		PDF L2SB1197KQLT1G L2SD1781K 236AB) L2SB1197KQLT1G 3000/Tape L2SB1197KQLT3G 10000/Tape L2SB1197KRLT1G L2SB1197KRLT3G

    ahr 49 transistor

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. Low Frequency Transistor L2SB1197KXLT1G PNP Silicon 3 FEATURE ƽHigh current capacity in compact package. IC = í0.8A. 1 ƽEpitaxial planar type. 2 ƽNPN complement: L2SD1781K ƽPb-Free Package is available. SOT– 23 TO–236AB


    Original     		PDF L2SB1197KXLT1G L2SD1781K 236AB) L2SB1197KQLT1G 3000/Tape L2SB1197KQLT3G 10000/Tape L2SB1197KRLT1G L2SB1197KRLT3G ahr 49 transistor

    ahr transistor

    Abstract: L2SB1197KQLT1 L2SB1197KQLT1G L2SB1197KRLT1 L2SB1197KRLT1G sot23 ahq
    Text: LESHAN RADIO COMPANY, LTD. Low Frequency Transistor L2SB1197K*LT1 PNP Silicon 3 FEATURE ƽHigh current capacity in compact package. IC = í0.8A. 1 ƽEpitaxial planar type. 2 ƽNPN complement: L2SD1781K ƽPb-Free Package is available. SOT– 23 TO–236AB


    Original     		PDF L2SB1197K L2SD1781K 236AB) L2SB1197KQLT1 L2SB1197KQLT1G 3000/Tape L2SB1197KRLT1 L2SB1197KRLT1G ahr transistor L2SB1197KQLT1 L2SB1197KQLT1G L2SB1197KRLT1 L2SB1197KRLT1G sot23 ahq

    Untitled

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. Low Frequency Transistor PNP Silicon L2SB1197KQLT1G Series S-L2SB1197KQLT1G Series FEATURE ƽHigh current capacity in compact package. IC = í0.8A. 3 ƽEpitaxial planar type. ƽNPN complement: L2SD1781K ƽ We declare that the material of product compliance with RoHS requirements.


    Original     		PDF L2SB1197KQLT1G S-L2SB1197KQLT1G L2SD1781K AEC-Q101 236AB) 3000/Tape 10000/Tape L2SB1197KQLT1G

    Untitled

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. Low Frequency Transistor L2SB1197KXLT1G Series PNP Silicon 3 FEATURE ƽHigh current capacity in compact package. IC = í0.8A. 1 ƽEpitaxial planar type. 2 ƽNPN complement: L2SD1781K ƽ We declare that the material of product compliance with RoHS requirements.


    Original     		PDF L2SB1197KXLT1G L2SD1781K 236AB) L2SB1197KQLT1G 3000/Tape L2SB1197KQLT3G 10000/Tape L2SB1197KRLT1G L2SB1197KRLT3G

    ahr transistor

    Abstract: L2SB1197KQLT1G L2SB1197KRLT1G L2SB1197K sot23 ahq
    Text: LESHAN RADIO COMPANY, LTD. Low Frequency Transistor L2SB1197KQLT1G Series PNP Silicon 3 FEATURE ƽHigh current capacity in compact package. IC = í0.8A. 1 ƽEpitaxial planar type. 2 ƽNPN complement: L2SD1781K ƽ We declare that the material of product compliance with RoHS requirements.


    Original     		PDF L2SB1197KQLT1G L2SD1781K 236AB) L2SB1197KQLT1G 3000/Tape L2SB1197KQLT3G 10000/Tape L2SB1197KRLT1G L2SB1197KRLT3G ahr transistor L2SB1197KRLT1G L2SB1197K sot23 ahq

    Untitled

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. Low Frequency Transistor PNP Silicon L2SB1197KQLT1G Series S-L2SB1197KQ LT1G Series FEATURE ƽHigh current capacity in compact package. IC = í0.8A. 3 ƽEpitaxial planar type. 1 ƽNPN complement: L2SD1781K ƽ We declare that the material of product compliance with RoHS requirements.


    Original     		PDF L2SB1197KQLT1G S-L2SB1197KQ L2SD1781K AEC-Q101 236AB) 3000/Tape L2SB1197KQLT1G S-L2SB1197KQLT1G L2SB1197KQLT3G S-L2SB1197KQLT3G

    copper wire

    Abstract: LH8550QLT1G L2SA1037AKRLT1G SSBC847BLT1G LBAS21CLT1G L9015HRLT1G LMBT3904SLT1G lmbt3906lt1g lrc LBCX19LT1G L9012RLT1G
    Text: LESHAN RADIO COMPANY, LTD. Ver.A PRODUCT/PROCESS CHANGE NOTIFICATION TO CUSTOMER PCN Number: LNC 090401 PCN Issue Date: 28th Apr' 2009 Contact: Contact your local LRC Sales Office Phone: Change Title: Copper Wire replacing Gold Wire in the SOT23 Packages Contact your local LRC Sales


    Original     		PDF L2SC2411KRLT1G L2SC2412KQLT1G L2SC2412KRLT1G L2SC2412KSLT1G L2SC3906KALT1G L2SD1781KRLT1G L2SD2114KVLT1G L2SD2114KWLT1G L9012QALT1G L9012QLT1G copper wire LH8550QLT1G L2SA1037AKRLT1G SSBC847BLT1G LBAS21CLT1G L9015HRLT1G LMBT3904SLT1G lmbt3906lt1g lrc LBCX19LT1G L9012RLT1G