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    L2N60 Search Results

    L2N60 Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    L2N600 Leshan Radio Company N-Channel Enhancement Mode Field Effect Transistor Original PDF

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    L2N600

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. 600V N-Channel Enhancement-Mode MOSFET VDS= 600V RDS ON , Vgs@10V, Ids@1A = 3.8Ω We declare that the material of product compliance with RoHS requirements. 1/5 LESHAN RADIO COMPANY, LTD. L2N600 Electrical Characteristics Parameter


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    PDF L2N600 L2N600

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    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. 600V N-Channel Enhancement-Mode MOSFET VDS= 600V RDS ON , Vgs@10V, Ids@1A = 3.8Ω We declare that the material of product compliance with RoHS requirements. 1/5 LESHAN RADIO COMPANY, LTD. L2N60 Electrical Characteristics Parameter


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    PDF L2N60

    2x062h

    Abstract: gk105 1SS216 GK104 SMD Transistors w06 D20SB80 SMD marking 5As D25SB80 LRB706F-40T1G 2x062
    Text: Leshan Radio Company, Ltd. 2008 PRODUCTS CATALOGUE 目 录 CONTENT 开关二极管 SWITCHING DIODES. 1 1. SOD–923 Surface Mount Switching Diodes. 1


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    PDF ZMM22 ZMM24 ZMM27 ZMM43 ZMM47 2x062h gk105 1SS216 GK104 SMD Transistors w06 D20SB80 SMD marking 5As D25SB80 LRB706F-40T1G 2x062