Untitled
Abstract: No abstract text available
Text: I_CDIL DO-35 Standard Zener Diodes 500 mW Electrical Characteristics (At Ta=25°C, Unless Otherwise Specified) Type No. v 2T a t lZT min nom (V) rZT at Ijjj max max (Ohm) ‘zT rZK a t l2K max (mA) (Ohm) *ZK (mA) Temp. Coeff. ot Zener Voltage typ (%/°C)
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DO-35
BZX79C36
BZX79C39
BZX79C43
BZX79C47
u5-50
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Untitled
Abstract: No abstract text available
Text: DO-35 Professional Grade Zener Diodes 400 mW Electrical C haracteristics (At Ta=25°C, U nless Otherw ise Specified) Type No. rzr at l^ Vzr at ^ZT * at l2K !ZK Temp. Coeff. of Zener Voltage typ (%/°C) (V) max (Ohm) (mA) max (Ohm) 1N957 6.8 4.5 18.5 700
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DO-35
1N957
1N959
1N960
1N961
1N962
1N963
1N964
1N965
1N966
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1N52518
Abstract: FZK 105 1N52568 fzk 101 FZK 111 1N52548 1N5251B 1N5252B 1N5253B 1N5254B
Text: IL DO-35 Standard Zener Diodes 500 mW Electrical Characteristics (At Ta=25°C, Unless Otherwise Specified) Type No. Vrr at Izr* nom (V) rZT at 'ZT* rZK max (Ohm) (mA) 1N5251B 22 29 5.6 1N5252B 24 33 1N5253B •25 1N5254B 'zK at l2K \-n max (Ohm) . (mA) Temp.
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1N5251B
1N5252B
1N5253B
1N5254B
1N5255B
1NS256B
1N5257B
D0-35/D0-4T
ui-50
1N52518
FZK 105
1N52568
fzk 101
FZK 111
1N52548
1N5253B
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Untitled
Abstract: No abstract text available
Text: IL DO-35 Standard Zener Diodes 500 mW Electrical Characteristics (At Ta=25°C, Unless Otherwise Specified) Type No. Vzr rZT a t l ZT* at l ^ nom (V) max (Ohm) (mA) 'z T * rZK 'zk at l2K 1N5251B 22 29 5.6 1N5252B 24 33 1N5253B •25 1N5254B max (Ohm) . (mA)
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DO-35
1N5251B
1N5252B
1N5253B
1N5254B
u5-50
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1N52398
Abstract: 1n52488 1N52318 1N52428 zener 1N52378 1N52368 1N52278 diode 1N52508 1N52478 1N52508
Text: DO-35 Standard Zendr Diodes 500 mW - Electrical Characteristics (At Ta=25°C, Unless Otherwise Specified) Type No. fZT at l^* at 'zT* fZK at l2K \„ Temp. Coeff. of Zener Voltage (%/°C) Ta 25°C max (MA) V R 'zM *ZSM* vF @ lF Pd (mA) (W) Ta 75 °C max
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1N5223B
1N5224B
1N5225B
1N5226B
1NS227B
1N5228B
1N5229B
1N5239B
1N5240B
1N5241B
1N52398
1n52488
1N52318
1N52428 zener
1N52378
1N52368
1N52278
diode 1N52508
1N52478
1N52508
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Untitled
Abstract: No abstract text available
Text: fl DO-41 Professional Grade Zener Diodes 1 W Electrical Characteristics (At Ta=25°C, Unless Otherwise Specified) Type No. ^ZT at min nom max (V) rZT *ZT max (Ohm) a t lZT rZK <ZK (mA) max (Ohm) (mA) a t l2K Temp. Coeff. lR at VR Ta Zener Voltage 25°C max
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DO-41
1N4728
1N4729
1N4730
u5-50
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Untitled
Abstract: No abstract text available
Text: DO-41 PROFESSIONAL GRADE ZENER DIODES 1 W Electrical Type No. min C h aracte ristics (At Ta=25°C, U n le ss O therw ise Specified ) 'zT V ZT rZT at lCT at Ij j at l2K max max nom max rZK 'ZK T C emp' oeff. Of Ir at V R Vr !ZM *ZSM Pd Vp Ip Ta ^ener ^oltaga
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DO-41
1N4752
1N47S3
1N4754
BZVB5C27
BZV85C30
BZV85C33
BZVB5C36
BZV85C39
BZV8SC43
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BZV85C5V1
Abstract: BZV85C5V6 BZV85C30 BZV85C3V3 BZV85C2V7 BZV85C3V6 BZV85C3V9 BZV85C4V3 BZV85C4V7 BZV85C6V2
Text: DO*41 Zener Diodes — —- - - — -: . Electrical Characteristics At Ta=25°C, Unless Otherwise Specified Type No. max (Ohm) (mA) max (Ohm) (mA) Temp. Coeff. of Zener Voltage typ (%/°C) ^ZT f ZT a t 'z r a tlz r min norm max (V)
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DCN41
BZV85C2V7
BZV85C3V3
BZV85C3V6
BZV85C3V9
BZV85C4V3
BZV85C4V7
BZV85C5V1
BZV85C16
BZV85C18
BZV85C5V6
BZV85C30
BZV85C6V2
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ADE-208-137
Abstract: 1n5223b
Text: ADE-208-137 Z 1N5223B through 1N5258B Silicon Epitaxial Planar Zener Diodes for Voltage Regulation Preliminary Rev. 0 Aug. 1993 HITACHI Features Outline • G lass package DO-35 structure ensures high reliability. • Wide spectrum from 2.7V through 36V of zener
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ADE-208-137
1N5223B
1N5258B
DO-35
1N5223B
DO-35
1N5258B
1N5248B
1N5249B
1N5250B
ADE-208-137
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IN4748A
Abstract: in4738 1H47S 1H4747A 1H4735A 1H4749A D000032 IT9010 200a liu 1N4732A
Text: INTERNATIONAL SEMICOND 4TE T0DQ37Ö □□□□032 1Tb « I S E M D International Semiconductor, Inc1 W silicon zener diodes M ECHANICAL CH A RACTERISTICS FEATURES MAXIMUM RATINGS • Zener voltage 3.3 to 100 V • Hermetically sealed glass package Junction Temperature: -65°C to +200°C
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0DD37fl
D000032
IN4748A
in4738
1H47S
1H4747A
1H4735A
1H4749A
IT9010
200a liu
1N4732A
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l2k Diodes
Abstract: zener diode 1N961 1N4733 zener diode 1N52 diode zener 182 lN5349 zener diode 182 1N751 1N752 1N754
Text: SEMICONDUCTORS INC DTE D | 013bb5D □□□□2LIÖ 4 | °? Zener Diodes. 0,4 W. 1N751 Series. 400 m W Glass Zener Diodes in DO-35 Package (TA = 25 °C . Outline : 5 Nominal Zener Voltage V ,a t l2I Type Maximum Zener Impedance at l2T in) 17 11 7 (V) 5 .1
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013bb5D
1N751
DO-35
1N752
1N753
1N754
1N755
1N756
1N757
l2k Diodes
zener diode 1N961
1N4733 zener diode
1N52
diode zener 182
lN5349
zener diode 182
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IN752 zener diode
Abstract: IN659 IN965 in4938 IN752 IN751 in755 zener in758 in753 zener in753 zener diode
Text: FAIRCHILD SEMICONDUCTOR ~ai deT| 3*4t i b 74 00271470 a J 3469674 FAIRCHILD SEMICONDUCTOR FAIRCHILD I A Schlumberger Company 84D 2 7 4 7 8 1N658/FDLL658 General Purpose Diodes T o i -Q°\ PACKAG ES 1N658 FDLL658 • B V . . . 120 V MIN @ 100 *iA • VF . 1 . 0 V ( M A X ) @ 1 00 mA
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00E747A
1N658/FDLL658
1N658
FDLL658
DO-35
LL-34
FDS01400
IN752 zener diode
IN659
IN965
in4938
IN752
IN751
in755
zener in758
in753 zener
in753 zener diode
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Untitled
Abstract: No abstract text available
Text: 0.5A Fully Protected Dual H-Bridge Driver Description The CS-3710 is a smart dual 0.5A Hbridge driver used in microprocessor controlled stepper motor systems. The CS-3710 provides bidirectional current using two independent 0.5A H-bridge drivers. On chip commutation diodes
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CS-3710
20b755b
00035TD
CS-3710
CS-3710M15
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diode IN4000
Abstract: 1N29B IN4000 IN4000 silicon diode Zener diode ZTK in2970 IN4000 series IN4000 diode IN3993 IN2987
Text: niCROSEni coRP 51E D • bll5abS Microsemi Corp. f Ti* atme expem SA STA CA SCOTTSDALE, A Z F o r m o re in fo rm a l,o n call: 602 941-6.10» 0001S5T 0 0b rise ■ 1NZ970 thru 1N3015B and 1N 3993 thru 1 N 4000A FEA TU RES • ZENER VOLTAGE 3.9 to 200V • VOLTAGE TOLERANCES; ± 5 % , ± 1 0 %
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lNZ970thru
1N3015B
1N4000A
80mW/Â
diode IN4000
1N29B
IN4000
IN4000 silicon diode
Zener diode ZTK
in2970
IN4000 series
IN4000 diode
IN3993
IN2987
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TLP626
Abstract: TA-39
Text: TOSHIBA TLP626,TLP626-2/TLP626-4 TOSHIBA PHOTOCOUPLER TI • m GaAs IRED & PHOTO-TRANSISTOR TI PK7R-? g U TI PR7R-A■ ■ g PROGRAMMABLE CONTROLLERS AC / DC-INPUT MODULE TELECOMMUNICATION U nit in mm 4 TLP626 3 51 [r3 The TOSHIBA TLP626, -2 and -4 consist of gallium arsenide infrared
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TLP626
TLP626-2/TLP626-4
TLP626,
TLP626-2
TLP626-4
TLP626
TLP626-4
TA-39
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LN 358 n
Abstract: 1N1000 LN 358 IC si9500 1G97
Text: 1N 2 9 7 0 thru 1N 3015B and 1N 3993 thru 1 N 400 0A Microsemi Corp. f The áuxte experts S -l \ T i -1 V 'l. C'A sí o n s n .4 1 r. For more a in t o : I iia h o r i / call: 602 941-6300 m FE A T U R E S • ZENER VOLTAGE 3.9 to 200V • VOLTAGE TOLERANCES; ± 5 % , ± 10% and ± 20% (See Note 1)
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3015B
LN 358 n
1N1000
LN 358 IC
si9500
1G97
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Z9M y
Abstract: 1N4460D 1N4465 "Z9m JANTX 1N4469 1N4460 z9m g "Z9m" 1N4460C 1N4496
Text: INCH-POUNO The documentation and process conversion measures necessary to comply with this shall be completed by 16 Aug 94. MIL-S-19500/4Q6C 16 Hay 1994 SUPERSEDING MIL-S-19500/406B 19 June 1992 MILITARY SPECIFICATION SEMICONDUCTOR DEVICES, D100E, SILICON, VOLTAGE REGULATOR
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MIL-S-19500/4Q6C
MIL-S-19500/406B
1N4460,
1N4460C,
1N4460D
1N4496,
1N4496C,
1N44960
1N6485,
1N6485C,
Z9M y
1N4465
"Z9m
JANTX 1N4469
1N4460
z9m g
"Z9m"
1N4460C
1N4496
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RCA SK CROSS-REFERENCE
Abstract: CD4003 2N2505 TF408 1N4465 250PA120 2N3017 pt 3570 trw rf pa189 Semicon volume 1
Text: 1969 o < 00 x ic e uo <r\ *—4 rO O CM u J 'r < o o o CO r aJ. rfrr.~> y -< z X— < P“ -J Sem iconductor Annual At .0008" Dia. . . . there is no second source phire orifice insert. Tempress also created and supplied the tungsten carbide ultrasonic bonding tool and pioneered
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