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    Diodes Incorporated D3V3L2BS3LP-7B

    ESD Protection Diodes / TVS Diodes General Protection PP X1-DFN1006-3 T&R 10K
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    Murata Manufacturing Co Ltd DLP31SN221ML2L

    Common Mode Chokes / Filters 220 OHM 16V
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    Mouser Electronics DLP31SN221ML2L 1,556
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    Diodes Incorporated D3V3L2BS3LPQ-7B

    ESD Protection Diodes / TVS Diodes General Protection PP X1-DFN1006-3 T&R 10K
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    L2B LP LP Datasheets Context Search

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    construction of varactor diode

    Abstract: No abstract text available
    Text: MC12147 Low Power Voltage Controlled Oscillator Buffer The MC12147 is intended for applications requiring high frequency signal generation up to 1300 MHz. An external tank circuit is used to determine the desired frequency of operation. The VCO is realized using an


    Original     		PDF MC12147 MC12202 MC12149 MC12147 200ms 909MHz 1220MHz construction of varactor diode

    mc12149

    Abstract: No abstract text available
    Text: Low Power Voltage Controlled Oscillator Buffer The MC12149 is intended for applications requiring high frequency signal generation up to 1300 MHz. An external tank circuit is used to determine the desired frequency of operation. The VCO is realized using an


    Original     		PDF MC12149 MC12202 MC12149 10MHz 200ms 909MHz

    ML12149-5P

    Abstract: ML12210 MA393 MC12149 MC12149D ML12149 LT 725
    Text: ML12149 Low Power Voltage Controlled Oscillator Buffer Legacy Device: Motorola MC12149 The ML12149 is intended for applications requiring high frequency signal generation up to 1300 MHz. An external tank circuit is used to determine the desired frequency of operation. The VCO


    Original     		PDF ML12149 MC12149 ML12149 ML12210 ML12149-5P MA393 MC12149 MC12149D LT 725

    construction of varactor diode

    Abstract: MA393 varactor diode high frequency MC12147 MC12147D MC12202
    Text: Order this document by MC12147/D MC12147 Low Power Voltage Controlled Oscillator Buffer The MC12147 is intended for applications requiring high frequency signal generation up to 1300 MHz. An external tank circuit is used to determine the desired frequency of operation. The VCO is realized using an


    Original     		PDF MC12147/D MC12147 MC12147 MC12202 construction of varactor diode MA393 varactor diode high frequency MC12147D

    Untitled

    Abstract: No abstract text available
    Text: ML12149 Low Power Voltage Controlled Oscillator Buffer Legacy Device: Motorola MC12149 The ML12149 is intended for applications requiring high frequency signal generation up to 1300 MHz. An external tank circuit is used to determine the desired frequency of operation. The VCO


    Original     		PDF ML12149 MC12149 ML12149 ML12210

    Untitled

    Abstract: No abstract text available
    Text: ML12149 Low Power Voltage Controlled Oscillator Buffer Legacy Device: Motorola MC12149 The ML12149 is intended for applications requiring high frequency signal generation up to 1300 MHz. An external tank circuit is used to determine the desired frequency of operation. The VCO


    Original     		PDF ML12149 MC12149 ML12210

    MA393

    Abstract: MC12147 MC12147D MC12149 MC12202 motorola varactor
    Text: Order this document by MC12147/D MC12147 Low Power Voltage Controlled Oscillator Buffer The MC12147 is intended for applications requiring high frequency signal generation up to 1300 MHz. An external tank circuit is used to determine the desired frequency of operation. The VCO is realized using an


    Original     		PDF MC12147/D MC12147 MC12147 MC12202 MA393 MC12147D MC12149 motorola varactor

    ML12149-5P

    Abstract: LANSDALE SEMICONDUCTOR MA393 MC12149 MC12149D ML12149 ML12210 so8 Wire bond
    Text: ML12149 Low Power Voltage Controlled Oscillator Buffer Legacy Device: Motorola MC12149 The ML12149 is intended for applications requiring high frequency signal generation up to 1300 MHz. An external tank circuit is used to determine the desired frequency of operation. The VCO


    Original     		PDF ML12149 MC12149 ML12149 ML12210 ML12149-5P LANSDALE SEMICONDUCTOR MA393 MC12149 MC12149D so8 Wire bond

    MA393

    Abstract: MC12147 MC12147D MC12149 MC12202
    Text: MC12147 Low Power Voltage Controlled Oscillator Buffer The MC12147 is intended for applications requiring high frequency signal generation up to 1300 MHz. An external tank circuit is used to determine the desired frequency of operation. The VCO is realized using an


    Original     		PDF MC12147 MC12147 MC12202 MC12147/D MA393 MC12147D MC12149

    k1 M 1208 Q switch

    Abstract: mc12149 csr rf construction of varactor diode MA393 MC12149D MC12149SD MC12202 Nippon capacitors
    Text: Order this document by MC12149/D Low Power Voltage Controlled Oscillator Buffer The MC12149 is intended for applications requiring high frequency signal generation up to 1300 MHz. An external tank circuit is used to determine the desired frequency of operation. The VCO is realized using an


    Original     		PDF MC12149/D MC12149 MC12202 MC12149 k1 M 1208 Q switch csr rf construction of varactor diode MA393 MC12149D MC12149SD Nippon capacitors

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor, Inc.Order this document by MC12147/D MC12147 Low Power Voltage Controlled Oscillator Buffer LOW POWER VOLTAGE CONTROLLED OSCILLATOR BUFFER SEMICONDUCTOR TECHNICAL DATA DEVICE TO BE PHASED OUT. ARCHIVE INFORMATION ARCHIVE INFORMATION


    Original     		PDF MC12147/D MC12147 MC12147 MC12202

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Low Power Voltage Controlled Oscillator Buffer The MC12147 is intended for applications requiring high frequency signal generation up to 1300MHz. An external tank circuit is used to determine the desired frequency of operation. The VCO is realized using


    Original     		PDF MC12147 1300MHz. MC12202 BR1334 MC12147/D* MC12147/D

    Qb 742

    Abstract: MA393 MC12149 MC12149D MC12202
    Text: Order this document by MC12149/D Low Power Voltage Controlled Oscillator Buffer The MC12149 is intended for applications requiring high frequency signal generation up to 1300 MHz. An external tank circuit is used to determine the desired frequency of operation. The VCO is realized using an


    Original     		PDF MC12149/D MC12149 MC12202 MC12149 Qb 742 MA393 MC12149D

    MA393

    Abstract: MC12149 MC12149D MC12202 L2B LP LP
    Text: Freescale Semiconductor, Inc.Order this document by MC12149/D MC12149 Low Power Voltage Controlled Oscillator Buffer LOW POWER VOLTAGE CONTROLLED OSCILLATOR BUFFER SEMICONDUCTOR TECHNICAL DATA NOTE: The MC12149 is NOT suitable as a crystal oscillator. •


    Original     		PDF MC12149/D MC12149 MC12149 MC12202 MA393 MC12149D L2B LP LP

    construction of varactor diode

    Abstract: MA393 MC12147 MC12147D MC12147SD MC12202 Nippon capacitors
    Text: Order this document by MC12147/D MC12147 Low Power Voltage Controlled Oscillator Buffer The MC12147 is intended for applications requiring high frequency signal generation up to 1300 MHz. An external tank circuit is used to determine the desired frequency of operation. The VCO is realized using an


    Original     		PDF MC12147/D MC12147 MC12147 MC12202 construction of varactor diode MA393 MC12147D MC12147SD Nippon capacitors

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor, Inc.Order this document by MC12149/D MC12149 Low Power Voltage Controlled Oscillator Buffer LOW POWER VOLTAGE CONTROLLED OSCILLATOR BUFFER SEMICONDUCTOR TECHNICAL DATA NOTE: The MC12149 is NOT suitable as a crystal oscillator. •


    Original     		PDF MC12149/D MC12149 MC12149 MC12202

    MC12149

    Abstract: MA393 MC12149D MC12202
    Text: Order this document by MC12149/D Low Power Voltage Controlled Oscillator Buffer The MC12149 is intended for applications requiring high frequency signal generation up to 1300 MHz. An external tank circuit is used to determine the desired frequency of operation. The VCO is realized using an


    Original     		PDF MC12149/D MC12149 MC12202 MC12149 MA393 MC12149D

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Low Power Voltage Controlled Oscillator Buffer The MC12149 is intended for applications requiring high frequency signal generation up to 1300MHz. An external tank circuit is used to determine the desired frequency of operation. The VCO is realized using


    Original     		PDF MC12149 1300MHz. MC12202 MC12149/D* MC12149/D DL140

    Untitled

    Abstract: No abstract text available
    Text: 2 ö l2b 72 DOQMböB bT7 Dialîght Surface Mount LED, Bicolor TAPING SPECIFICATIONS rear side of tape PART NO. 597-7701-2xx LED COLOR Red/Green [ 079] |-— [.1S7] •<h Benefits • Compatible with automatic placement equipment • Compatible with infrared


    OCR Scan     		PDF 597-7701-2xx 597-7701-2xx EIA-481-1 MIL-STD-202E,

    P06V

    Abstract: D024 KSK161
    Text: KSK161 SILICON N-CHANNEL JUNCTION FET _ i- FM TUNER VHF AMPLIFIER • NF - 2.S dB TYP •|Yra|- 9.0 mS (TYP) ABSOLUTE MAXIMUM RATINGS (T.-25 °C) Characteristic Symbol Gate-Drain Voltage Gate Current Power Dissipation Junction Temperature


    OCR Scan     		PDF KSK161 O-92S 00E4flbb P06V D024 KSK161

    philips tea 1091

    Abstract: TEA 1091 TEA1112AT TEA1112 TEA1112A TEA1112T
    Text: Philips Semiconductors Preliminary specification Low voltage versatile telephone transmission circuits with dialler interface TEA1112; TEA1112A FEATURES GENERAL DESCRIPTION • Low DC line voltage; operates down to 1.6 V excluding polarity guard The TEA1112; TEA1112A are bipolar integrated circuits


    OCR Scan     		PDF TEA1112 TEA1112A TEA1112) TEA1112A) 711002b 00C17M57 philips tea 1091 TEA 1091 TEA1112AT TEA1112A TEA1112T

    T3D 67 diode

    Abstract: T3D 77 diode 74ABT821 T3D 46 diode T3D DIODE clamp SA00223 t3d 62 diode
    Text: Philips Semiconductors Product specification 10-bit D-type flip-flop; positive-edge trigger 3-State _ . OTOOi 74ABT821 extra data width for wider data/address paths of buses carrying parity. FEATURES • High speed parallel registers with positive edge-triggered D-type


    OCR Scan     		PDF 10-bit 74ABT821 64mA/-32mA 500mA sot355-1 MO-153AD 1995Sep06 11Dfl2b T3D 67 diode T3D 77 diode T3D 46 diode T3D DIODE clamp SA00223 t3d 62 diode

    ma7805

    Abstract: 2SC631 2SC632 2N3406 2SC634 FV918 2N1082 a608 NS3039 2SC402A
    Text: SYMBOLS & CODES EXPLAINED IN T Y P E No. CROSS-INDEX & TE C H N IC A L SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. This manufacturer-identifying symbol (assigned by D .A .T.A .) is an integral part of the type number (in Type No. Cross Index,


    OCR Scan     		PDF Voff-200uV. NS8000 NS8003 OC740 Pt-500mW; BVCBO-12V; 50-1500KC. Voff-100uV; 0-50KC. ma7805 2SC631 2SC632 2N3406 2SC634 FV918 2N1082 a608 NS3039 2SC402A

    T3D DIODE clamp

    Abstract: T3D 79 diode T3D DIODE t3d 62 diode Diode T3D 54 T3D 67 diode T3D 54 DIODE Diode T3D 08 T3D 46 diode T3D 45 diode
    Text: Philips Semiconductors Product specification 10-bit D-type flip-flop; positive-edge trigger 3-State _ . OTOOi 74ABT821 extra data width for wider data/address paths of buses carrying parity. FEATURES • High speed parallel registers with positive edge-triggered D-type


    OCR Scan     		PDF 10-bit 74ABT821 64mA/-32mA 500mA 74ABT821 sot355-1 mo-153ad 1995Sep06 11Dfl2b T3D DIODE clamp T3D 79 diode T3D DIODE t3d 62 diode Diode T3D 54 T3D 67 diode T3D 54 DIODE Diode T3D 08 T3D 46 diode T3D 45 diode