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    L21 DIODE MARKING Search Results

    L21 DIODE MARKING Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    L21 DIODE MARKING Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: BAS29, BAS31, BAS35 Il SILICON PLANAR EPITAXIAL HIGH-SPEED DIODE BAS29 single diode, BAS31 dual diodes in series and BAS35 dual diodes, common anodes. Marking PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm BAS2&- L20 BAS31 - L21 BAS35 - L22 _3.0_ 2.8 0.46 w -H


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    BAS29, BAS31, BAS35 BAS29 BAS31 BAS35 BAS31 PDF

    Untitled

    Abstract: No abstract text available
    Text: 83633^4 DDDD718 7b4 • BAS29, BAS31, BAS35 SILICON PLANAR EPITAXIAL HIGH-SPEED DIODE BAS29 single diode, BAS31 dual diodes in series and BAS35 dual diodes, common anodes. Marking PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm BAS29- L20 BAS31 - L21 BAS35 - L22


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    DDDD718 BAS29, BAS31, BAS35 BAS29 BAS31 BAS35 BAS29- PDF

    Untitled

    Abstract: No abstract text available
    Text: BAS29, BAS31, BAS35 SILICON PLANAR EPITAXIAL HIGH-SPEED DIODE BAS29 single diode, BAS31 dual diodes in series and BÀS35 dual diodes, common anodes. Marking PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm BAS29- L20 BAS31 - L21 BAS35 L22 J.O 2.8 0.46 H — H i


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    BAS29, BAS31, BAS35 BAS29 BAS31 BAS29- BAS35 BAS29 PDF

    BAS29

    Abstract: BAS31 BAS35 diode 7B4
    Text: • E3A33T4 DDDG716 7b4 ■ BAS29, BAS31, BAS35 SILICON PLANAR EPITAXIAL HIGH-SPEED DIODE BAS29 single diode, BAS31 dual diodes in series and BAS35 dual diodes, common anodes. Marking PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm B A S 2 9 - L20 BAS31 - L21


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    D00G716 BAS29, BAS31, BAS35 BAS29 BAS31 BAS35 BAS29- diode 7B4 PDF

    BAS29

    Abstract: BAS31 BAS35
    Text: Transys Electronics L I M I T E D SOT-23 BAS29, BAS31, BAS35 SILICON PLANAR EPITAXIAL HIGH-SPEED DIODE BAS29 single diode, BAS31 dual diodes in series and BAS35 dual diodes, common anodes. PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm Marking BAS29– L20 BAS31 – L21


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    OT-23 BAS29, BAS31, BAS35 BAS29 BAS31 BAS35 BAS29­ BAS31 PDF

    l21 diode marking

    Abstract: l21 diode marking c2 diode MARKING CODE l22 marking code C2 diode diode MARKING CODE C2 CODE L22 L21 marking code
    Text: Central CMPD1001 CMPD1001A CMPD1001S TM Semiconductor Corp. DESCRIPTION: The Central Semiconductor CMPD1001 series types are silicon switching diodes manufactured by the epitaxial planar process, designed for applications requiring high current capability.


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    CMPD1001 CMPD1001A CMPD1001S OT-23 CMPD1001A 100mA 200mA l21 diode marking l21 diode marking c2 diode MARKING CODE l22 marking code C2 diode diode MARKING CODE C2 CODE L22 L21 marking code PDF

    MARKING CODE l22

    Abstract: l21 code diode marking r5 l21 diode l21 diode marking CODE L22 diode marking ja CMPD1001 Marking code TM SOT23-6 CMPD1001S
    Text: Central CMPD1001 CMPD1001A CMPD1001S TM Semiconductor Corp. SURFACE MOUNT HIGH CURRENT SILICON SWITCHING DIODE DESCRIPTION: The Central Semiconductor CMPD1001 series types are silicon switching diodes manufactured by the epitaxial planar process, designed for


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    CMPD1001 CMPD1001A CMPD1001S CMPD1001 OT-23 MARKING CODE l22 l21 code diode marking r5 l21 diode l21 diode marking CODE L22 diode marking ja Marking code TM SOT23-6 CMPD1001S PDF

    L21 marking code

    Abstract: No abstract text available
    Text: CMPD1001 CMPD1001A CMPD1001S SURFACE MOUNT HIGH CURRENT SILICON SWITCHING DIODE w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPD1001 series types are silicon switching diodes manufactured by the epitaxial planar process, designed for applications


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    CMPD1001 CMPD1001A CMPD1001S CMPD1001 OT-23 100mA 200mA L21 marking code PDF

    l21 diode

    Abstract: l21 diode marking MARKING CODE l22 marking code 35 CODE L22 marking code diode CMPD1001 CMPD1001A CMPD1001S marking code
    Text: CMPD1001 CMPD1001A CMPD1001S SURFACE MOUNT HIGH CURRENT SILICON SWITCHING DIODE w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPD1001 series types are silicon switching diodes manufactured by the epitaxial planar process, designed for applications


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    CMPD1001 CMPD1001A CMPD1001S CMPD1001 OT-23 100mA 200mA l21 diode l21 diode marking MARKING CODE l22 marking code 35 CODE L22 marking code diode CMPD1001A CMPD1001S marking code PDF

    MARKING SY SOT23

    Abstract: marking JG SOT-23 L21 marking code marking code LE SOT 23 jg sot23 Diode SY 350
    Text: Central" CMPD1001 CMPD1001A CMPD1001S Semiconductor Corp. DESCRIPTION: The Central Semiconductor CMPD1001 series types are silicon switching diodes manufactured by the epitaxial planar process, designed for applications requiring high current capability. HIGH CURRENT


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    CMPD1001 CMPD1001A CMPD1001S OT-23 CMPD1001A 100ii 13-November MARKING SY SOT23 marking JG SOT-23 L21 marking code marking code LE SOT 23 jg sot23 Diode SY 350 PDF

    marking code fs 1 sot 323

    Abstract: R5 MARKING CODE diode l22
    Text: Central“ CMPD1001 CMPD1001A CMPD1001S Semiconductor Corp. SURFACE MOUNT HIGH CURRENT SILICON SWITCHING DIODE DESCRIPTION: The Central Semiconductor CMPD1001 series types are silicon switching diodes manufactured by the epitaxial planar process, designed for


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    CMPD1001 CMPD1001A CMPD1001S OT-23 CMPD1001S OPD1001S marking code fs 1 sot 323 R5 MARKING CODE diode l22 PDF

    A82 SMD

    Abstract: marking code jg SMD diode smd diode marking jg smd diode A82 marking code JG SMD d1875 smd A82 smd code A82 BAV70-184 smd diode code F3
    Text: SMD Switching Diodes Three Terminals Part No. Peak Reverse Marking Voltage Code Max. Forward Voltage Drop @ IF VRRM (V) VF (V) IF (mA) SMD Diodes Max. Max. Diode Max. Reverse Reverse CapaciPackCurrent Recov- tance Pinout age @ VR ery Time @1MHz Diag. 0V


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    TWT4148S-221F5 TWT4148A-120F5 TWT4148C-121F5 TWT4148S-221WT TWT4148A-120WT TWT4148C-121WT A82 SMD marking code jg SMD diode smd diode marking jg smd diode A82 marking code JG SMD d1875 smd A82 smd code A82 BAV70-184 smd diode code F3 PDF

    smd diode A82

    Abstract: smd diode marking A3 smd code A82 DIODE smd marking A3 marking code JG SMD TWT4148A-120F5 diode SMD MARKING CODE A6
    Text: SMD Switching Diodes Three Terminals Part No. Peak Reverse Marking Voltage Code Max. Forward Voltage Drop @ IF VRRM (V) VF (V) IF (mA) SMD Diodes Max. Max. Diode Max. Reverse Reverse CapaciPackCurrent Recov- tance Pinout age @ VR ery Time @1MHz Diag. 0V


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    TWT4148S-221F5 TWT4148A-120F5 TWT4148C-121F5 TWT4148S-221WT TWT4148A-120WT TWT4148C-121WT smd diode A82 smd diode marking A3 smd code A82 DIODE smd marking A3 marking code JG SMD TWT4148A-120F5 diode SMD MARKING CODE A6 PDF

    smd diode marking A7 SOT-23

    Abstract: SMD DIODE A6 t SOT-23 5d smd sot-23 L21 SMD marking codes sot-23 A4 A7 w sot-23 diode SOT89 smd marking A5 sod a4 marking smd diode SOT23 A6 smd diode marking A3 sot23
    Text: SMD SWITCHING DIODES DESCRIPTION • Philips Components diodes for switching applications combine the highest quality standards w ith state-of-the-art production equipm ent to fulfill the need for generic, low-cost devices. These sw itching diodes offer a broad


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    OT-23 OT-143 PMLL4151 PMLL4153 PMLL4446 PMLL4448 OT-223 OT-143 smd diode marking A7 SOT-23 SMD DIODE A6 t SOT-23 5d smd sot-23 L21 SMD marking codes sot-23 A4 A7 w sot-23 diode SOT89 smd marking A5 sod a4 marking smd diode SOT23 A6 smd diode marking A3 sot23 PDF

    SMD diode C5C

    Abstract: smd diode A82 SMD diode Ca6 SMD diode CA2 dual diode 1N4148 SMD smd diode 1N4148 sot23 1N4148 diode SOD 80 1n4148 smd diode 1N4148 diode SMD type smd diode marking code L51
    Text: SMD Switching Diodes TYPE NO. CASE DESCRIPTION BAS28 BAS 56 CLL914 CLL2003 CLL4150 CLL4448 CLL5001 CM PD914 CMPD1001 CMPD1001A SOT-143 SOT-143 SOD-8O SOD-80 SOD-8O SOD-8O SOD-8O SOT-23 SOT-23 SOT-23 CMPD1001S CMPD20Û3 CMPD2004 CMPD2004S SOT-23 SOT-23 SOT-23


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    BAS28 BAS56 CLL914 CLL2003 CLL4150 CLL4448 CLL5001 CMPD914 CMPD1001 CMPD1001A SMD diode C5C smd diode A82 SMD diode Ca6 SMD diode CA2 dual diode 1N4148 SMD smd diode 1N4148 sot23 1N4148 diode SOD 80 1n4148 smd diode 1N4148 diode SMD type smd diode marking code L51 PDF

    diode marking e8

    Abstract: l21 code BAS31 Diode Marking 016 l21 diode
    Text: BAS31 Dual In-Series General-Purpose Controlled-Avalanche Diode TO-236AB SOT-23 .122 (3.1) .110 (2.8) .016 (0.4) t c u d o r P w e N Mounting Pad Layout 0.037 (0.95) 0.037 (0.95) Top View 0.079 (2.0) .056 (1.43) .052 (1.33) 3 1 0.035 (0.9) Dimensions in inches


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    BAS31 O-236AB OT-23) OT-23 O-236AB) 100mA 200mA 400mA diode marking e8 l21 code BAS31 Diode Marking 016 l21 diode PDF

    Untitled

    Abstract: No abstract text available
    Text: _ A_ BAS29 BAS31 BAS35 SILICON PLANAR EPITAXIAL HIGH-SPEED DIODES The BAS29, BAS31 and the BAS35 are silicon planar epitaxial diodes encapsulated in a SOT-23 envelope. The BAS29 consists of a single diode. The BAS31 has two diodes in series and the BAS35 has two


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    BAS29 BAS31 BAS35 BAS29, BAS31 BAS35 OT-23 BAS29 PDF

    L21 SMD

    Abstract: smd L21 KAS31 JTp smd diode smd diode 1301 L20 SMD bas35 l21 diode marking TP50S smd diode marking t1
    Text: Diodes SMD Type General Purpose Controlled Avalanche Diodes KAS29/KAS31/KAS35 BAS29/BAS31/BAS35 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features 1 0.55 General application +0.1 1.3-0.1 +0.1 2.4-0.1 Small plastic SMD package 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1


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    KAS29/KAS31/KAS35 BAS29/BAS31/BAS35) OT-23 KAS35 KAS31 KAS29 L21 SMD smd L21 KAS31 JTp smd diode smd diode 1301 L20 SMD bas35 l21 diode marking TP50S smd diode marking t1 PDF

    88128

    Abstract: BAS31 MJ marking sot23 Diode Marking 016 general purpose diode marking code -08
    Text: BAS31 Vishay Semiconductors New Product formerly General Semiconductor Dual In-Series General-Purpose Controlled-Avalanche Diode Mounting Pad Layout TO-236AB SOT-23 0.031 (0.8) .122 (3.1) .110 (2.8) .016 (0.4) Top View 0.035 (0.9) .056 (1.43) .052 (1.33)


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    BAS31 O-236AB OT-23) OT-23 O-236AB) 400mA 15-May-02 88128 BAS31 MJ marking sot23 Diode Marking 016 general purpose diode marking code -08 PDF

    Untitled

    Abstract: No abstract text available
    Text: Product specification KAS29/KAS31/KAS35 BAS29/BAS31/BAS35 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features 1 0.55 General application +0.1 1.3-0.1 +0.1 2.4-0.1 Small plastic SMD package 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 1.Base 2.Emitter 3.collector


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    KAS29/KAS31/KAS35 BAS29/BAS31/BAS35) OT-23 KAS35 KAS31 KAS29 PDF

    Untitled

    Abstract: No abstract text available
    Text: • bbSS'Dl 0 0 5 4 5 6 2 4flfl N AMER PHILIPS/DISCRETE BAS29 BAS31 BAS35 IAPX b7E 3 _ / v _ SILICON PLANAR EPITAXIAL HIGH-SPEED DIODES The BAS29, BAS31 and the BAS35 are silicon planar epitaxial diodes encapsulated in a SOT-23 envelope.


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    BAS29 BAS31 BAS35 BAS29, BAS31 BAS35 OT-23 BAS29 PDF

    Untitled

    Abstract: No abstract text available
    Text: Central" CMPD1001 CMPD1001A CMPD1001S Semiconductor Corp. HIGH CURRENT SWITCHING DIODE DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPD1001 series types are silicon switching diodes manufactured by the epitaxial planar process, designed for applications requiring


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    CMPD1001 CMPD1001A CMPD1001S CMPD1001 OT-23 PDF

    BAS31

    Abstract: BAS35 doppeldiode
    Text: BAS31 BAS35 BAS31 BAS35 Surface Mount Small Signal Dual Diodes Kleinsignal-Doppel-Dioden für die Oberflächenmontage Version 2009-11-26 1.1 2.9 ±0.1 0.4 1.3 2.5 ±0.1 max 3 Type Code 2 1 Power dissipation – Verlustleistung 350 mW Repetitive peak reverse voltage


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    BAS31 BAS35 OT-23 O-236) UL94V-0 BAS31 BAS35 doppeldiode PDF

    BAS31

    Abstract: BAS35
    Text: BAS31, BAS35 BAS31, BAS35 Surface Mount Small Signal Dual Diodes Kleinsignal-Doppel-Dioden für die Oberflächenmontage Version 2011-10-11 1.1 2.9 ±0.1 0.4 1.3 2.5 ±0.1 max 3 Type Code 2 1 Power dissipation – Verlustleistung 350 mW Repetitive peak reverse voltage


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    BAS31, BAS35 OT-23 O-236) UL94V-0 BAS31 BAS35 PDF