Untitled
Abstract: No abstract text available
Text: SKKT 15, SKKH 15 THYRISTOR BRIDGE,SCR,BRIDGE SEMIPACK 0 Thyristor / Diode Modules LMNO LMMO= LDMO L XVV ¥VV TAVV TBVV L @VV UVV TCVV TRVV PISL Q TB S G*2 > TUVW I5 Q XB YEH NZZI TB[V@? NZZ$ TB[V@? NZZI TB[VU? NZZ$ TB[VU? NZZI TB[TC? NZZ$ TB[TC? NZZI TB[TR?
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1084-VV
Abstract: AP1084
Text: This Anachip version datasheet is replaced with Diodes Inc. datasheet AP1084 AP1084 5A Low Dropout Positive Adjustable or Fixed-Mode Regulator Features • • • • • • • General Description AP1084 is a low dropout positive adjustable or fixedmode regulator with minimum of 5.0A output current
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AP1084
AP1084
1084-VV
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30076
Abstract: 1N4006 1N4148 VI-J00 VI-AIM Vicor 30769
Text: 12. AC Input Module AIM / MI-AIM Design Guide & Applications Manual For VI-200 and VI-J00 Family DC-DC Converters and Configurable Power Supplies OVERVIEW In combination with VI-200 and VI-J00 Family of DC-DC converter modules, the Alternating Input Module (AIM)
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VI-200
VI-J00
VI-200/J00
A/250V
30076
1N4006
1N4148
VI-AIM
Vicor 30769
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Untitled
Abstract: No abstract text available
Text: This Anachip version datasheet is replaced with Diodes Inc. datasheet AP1086 AP1086 1.5A Low Dropout Positive Adjustable or Fixed-Mode Regulator Features • • • • • General Description AP1086 is a low dropout positive adjustable or fixed-mode regulator with minimum of 1.5A output
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AP1086
AP1086
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Untitled
Abstract: No abstract text available
Text: This Anachip version datasheet is replaced Not Recommended for New Design with Diodes Diodes Inc. AP1086 use Inc.datasheet Datasheet AP1086 AP1086 1.5A Low Dropout Positive Adjustable or Fixed-Mode Regulator Features • • • • • General Description
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AP1086
AP1086
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Untitled
Abstract: No abstract text available
Text: TOP264-271 TOPSwitch-JX Family Integrated Off-Line Switcher with EcoSmart™ Technology for Highly Efficient Power Supplies Product Highlights + EcoSmart – Energy Efficient • Ideal for applications from 10 W to 245 W • Energy efficient over entire load range
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OP264-271
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la 7632
Abstract: No abstract text available
Text: dream SINGLE CHIP SYNTHESIZER WITH EFFECTS Single chip all-in-one design, only requires external DAC — MIDI control processor — Synthesis, General MIDI w avetable im plem entation — C om patible effects : reverb + chorus — Program m able Spatializer or four channels surround *
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TO-264-aa
Abstract: No abstract text available
Text: HiPerFET Power MOSFETs IXFK90N20Q IXFK90N20QS Q C lass ID25 = 200 V = 90 A R = D SS DS on Sym bol Test Conditions Maxim um Ratings V OSS Tj = 25°C to 150°C 200 V VDGR Tj = 25°C to 150°C; R GS = 1 MQ 200 V Vos V GSM Continuous ±20 V Transient ±30
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IXFK90N20Q
IXFK90N20QS
O-264
O-264AA
TO-264-aa
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SHINDENGEN DIODE
Abstract: No abstract text available
Text: V a y h =£/<V 7 S Ü « T !/ U X Surface Mounting Device K v o m Schottky Barrier Diode Twin Diode l^ v -% [Z I DF30PC3M OUTLINE DIMENSIONS Case : STO-220 30V 30A •S M D rn • f i f i V i = 0 ,4 V o -m m ± • D C iü ^ O R J B • D C /D C U V A - ?
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DF30PC3M
STO-220
--12r>
SHINDENGEN DIODE
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rc helicopter circuit diagram
Abstract: j3700 reverb IC
Text: dream SINGLE CHIP SYNTHESIZER WITH EFFECTS, PARALLEL INTERFACE • Single chip all-in-one design, only requires external DAC — MIDI control processor, serial and parallel interface — Synthesis — Compatible effects : reverb + chorus — Programmable Spatializer orfour channels surround *
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SAM9793
rc helicopter circuit diagram
j3700
reverb IC
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TO-247 Package y
Abstract: No abstract text available
Text: □ IXYS Preliminary Data Sheet HiPerFAST IGBT with Diode IXGH30N60BU1 IXGH30N60BU1S V CES 600 V 60 A 1.8 V 130 ns ^C25 V CE sat Combi Pack TO-247 SMD (30N60BU1S) m Maximum Ratings Symbol Test Conditions V CES Td = 25°C to 150°C 600 V V CGR Td = 25°C to 150°C; RGE = 1 M£i
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IXGH30N60BU1
IXGH30N60BU1S
O-247
TO-247 Package y
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SHINDENGEN DIODE
Abstract: DE10S3L
Text: S U S x /W 7. , V 3 . y _i _ Sur f ace Mounting Device *# 8 1 Diode 7 Schottky Barrier Diode . OUTLINE DIMENSIONS DE10S3L 30 V 10A • SMD • T j 15 0 t ; • ftV f = 0 45V • PnRRM J ''K 3 > V X lS 6 Ü
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DE10S3L
SHINDENGEN DIODE
DE10S3L
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Untitled
Abstract: No abstract text available
Text: ¡Ü H Ü X / N '- I' X „ _ - , lounting Device Surface Mounting . Super F ast Recovery Diode Single Diode OUTLINE DIMENSIONS D2FL40 400V 1.3A •^ Jv ä JS M D • trr5 0 n s ffl Ì É •S R B S •D C / D C Z\y>K.—S> • 7U - r p . 'O b • m m . OA. m m
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D2FL40
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S3K60
Abstract: Low Forward Voltage Diode
Text: Super Fast Recovery Diode Axial Diode OUTLINE S3K60 Unit : m m Package : AX14 W eight 1.06g Typ 600V 3A 2 ' Feature 26.5 • í iü í E F R D • High Voltage Supper FRD • trr=100ns • trr= 100ns • V f =1.3V • Low V f=1 .3V N B 26.5 -Li. MA «<?
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S3K60
100ns
S3K60
J533-1
Low Forward Voltage Diode
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Untitled
Abstract: No abstract text available
Text: VRRM =800-1600 V U A V M = 30 A Rectifier Diode Prelim inary Data V RSM V V RRM T0-220 TO-263 DSI DSI DSI DSI DSI DSI DSI DSI TO-263 AA Ki V V 900 1300 1500 1700 800 1200 1400 1600 30-08A 30-12A 30-14A 30-16A Symbol Test Conditions U(AV)M Tc = UsM T v, = 45°C;
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T0-220
O-263
O-263
0-08A
0-12A
0-14A
0-16A
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BDX69
Abstract: transistor handbook BDX68 BDX68A BDX68C BDX69B
Text: ¡A-ISp 2 .5 8 BDX69; 69A BDX69B; 69C JV DARLINGTON POWER T R A N SIST O R S N-P-N Darlingtons for audio output stages and general amplifier and switching applications. In TO-3 envelope. P-N-P complements are BD X68, 8D X6 8A , BD X 6 8 8 and BD X 68 C . Q U IC K R E F E R E N C E D A T A
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BDX69;
BDX69B;
BDX68,
BDX68A,
BDX688
BDX68C.
BDX69
transistor handbook
BDX68
BDX68A
BDX68C
BDX69B
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025B2
Abstract: ge motor 752
Text: ' D I X Y Advanced Technical Information S Ultra-Low VCE sat IGBT with Diode 1XGH 28N60B IXGT 28N60B V CES ^C25 v CE(sat) 600 V 40 A 2.0 V Combi Pack Symbol Test Conditions Maximum Ratings v CES T, = 2 5 °C to 1 5 0 °C 600 V VcOR T ,J = 25° C to 150° C; R_.
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28N60B
28N60B
O-268
O-247
025B2
ge motor 752
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IXGH20N60BU1
Abstract: IXGH20N60BU1S HIPERFAST IGBT WITH DIODE IXGH20N60BU1 TO-247 IXYS DIODE SMD GEM TAA 521 D
Text: □ IXYS Preliminary data IXGH20N60BU1 IXGH20N60BU1S HiPerFAST IGBT with Diode V CES ^C 25 V CE(sat)typ Combi Pack *fi(typ) = 600 V = 40 A = 1.7 V = 100 ns TO-247 SMD* Symbol Test Conditions V v CGR Td = 25°C to 150°C Td = 25°C to 150°C; RGE = 1 M£i
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IXGH20N60BU1
IXGH20N60BU1S
O-247
IXGH20N60BU1S
HIPERFAST IGBT WITH DIODE
IXGH20N60BU1 TO-247 IXYS
DIODE SMD GEM
TAA 521 D
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Untitled
Abstract: No abstract text available
Text: !3 IX ^ Y "S Advanced Technical Information VDSS IXFH 75N10Q IXFT 75N10Q HiPerFET Power MOSFETs Q-Class = 100 V = 75 A = 20 mQ ^D25 D DS on trr < 200ns N-Channel Enhancement Mode Avalanche Rated, Highdv/dt Low Gate Charge and Capacitances Symbol TestConditions
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75N10Q
200ns
-247A
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MARKING aep
Abstract: No abstract text available
Text: ' t y y ÿ ' f # —K : Outline Drawings SCHOTTKY BARRIER DIODE • 4 # f i ’ Features • l&Vc Lo w V f ■ : Super high speed sw itchin g. »aft 1 J» >1 ■K 1 ? High reliability by planer design. • Marking 9 oi 3 W :ft5m m b'7f S KM A «TBI WiH^nW
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I95t/R89)
Shl50
MARKING aep
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SLC-B 42-PIN
Abstract: No abstract text available
Text: SEHITRON INDUSTRIES LT D 20E D • a i 3 7 f i a cl 0 0 0 0 0 1 1 POWERZORB ■ SLCB V\\-\^> L20 Series 600W Bipolar Transient Absorption Zener Diodes A range of bipolar protection diodes in a surface mount package. "" p P V t T 600W; 1mf5 eypo suiyc 1W max cunt
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fll37flflT
D00D015
SLC-B 42-PIN
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Untitled
Abstract: No abstract text available
Text: SIEMENS 2-A DC Motor Driver TLE 4202 B Bipolar IC Overview Features • • • • • • • Drives motors up to 2 A Integrated free-wheeling diodes 2.5 A Short-circuit proof to ground Overtemperature protection Low saturation voltages through bootstrap
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Q67000-A8225
P-T0220-7-1
Q103SDT
235b05
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Untitled
Abstract: No abstract text available
Text: TD TOSHIBA -CDISCRETE/OPTOD- D Ë J T C H 7 B 5 D GG 11,35 Y ö 9 0 97 25 0 T O S HI BA <DISCRETE/OPTO tfosìuba D7 I 3 3 - 3 g 90D 16357 TOSHIBA GTR MODULE SEMICONDUCTOR MG 20 O M 1FK 1 SILICON NPN TRIPLE DIFFUSED TYPE TECHNICAL DATA HIGH POWER SWITCHING APPLICATIONS.
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IC-200A)
ECA-MG200M1FK1-4
DT-33-35
clDc17a
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Untitled
Abstract: No abstract text available
Text: D 1 X Y S Preliminary data HiPerFAST IGBT with Diode IXGX50N60AU1 IXGX50N60AU1S Combi Pack v CES ^C25 vv CE sat tfi = 600 V = 75 A = 2.7 V = 275 ns TO-247 Hole-less SMD (50N 60AU 1S) Symbol Test Conditions Maximum Ratings v CES T j = 25°C to 150°C 600
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IXGX50N60AU1
IXGX50N60AU1S
O-247
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