56-PIN
Abstract: LH28F320S3TD-L10 TSOP056-P-1420
Text: LH28F320S3TD-L10 LH28F320S3TD-L10 32 M-bit 2 MB x 8/1 MB x 16 x 2-Bank Smart 3 Dual Work Flash Memory DESCRIPTION The LH28F320S3TD-L10 Dual Work flash memory with Smart 3 technology is a high-density, low-cost, nonvolatile, read/write storage solution for a wide
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LH28F320S3TD-L10
LH28F320S3TD-L10
56-pin
TSOP056-P-1420)
TSOP056-P-1420
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LH28F160S3NS-L10
Abstract: LHF16KA1
Text: PRELIMINARY PRODUCT SPECIFICATIONS Integrated Circuits Group LH28F160S3NS-L10 Flash Memory 16M 2M x 8/1M × 16 (Model No.: LHF16KA1) Issue Date: March 16, 2001 sharp LHF16KA1 ●Handle this document carefully for it contains material protected by international copyright
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LH28F160S3NS-L10
LHF16KA1)
LHF16KA1
LH28F160S3NS-L10
LHF16KA1
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LH28F160S3HNS-L10
Abstract: No abstract text available
Text: PRODUCT SPECIFICATIONS Integrated Circuits Group LH28F160S3HNS-L10 Flash Memory 16M 2Mx8/1Mx16 (Model No.: LHF16KAS) Spec No.: EL131052 Issue Date: February 5, 2001 sharp LHF16KAS ●Handle this document carefully for it contains material protected by international copyright
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LH28F160S3HNS-L10
8/1Mx16)
LHF16KAS)
EL131052
LHF16KAS
LH28F160S3HNS-L10
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LH28F160S3HNS-L10
Abstract: No abstract text available
Text: Date 16M x8/x16 Flash Memory LH28F160S3HNS-L10 Feb. 5. 2001 LHF16KAS ●Handle this document carefully for it contains material protected by international copyright law. Any reproduction, full or in part, of this material is prohibited without the express
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x8/x16)
LH28F160S3HNS-L10
LHF16KAS
AP-001-SD-E
AP-006-PT-E
AP-007-SW-E
LH28F160S3HNS-L10
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DO14
Abstract: LH28F160S3NS-L10 LHF16KA1
Text: PRODUCT SPECIFICATIONS Integrated Circuits Group LH28F160S3NS-L10 Flash Memory 16M 2MB x 8/1MB × 16 (Model No.: LHF16KA1) Spec No.: EL128039 Issue Date: August 22, 2000 SHARP LHFlGKAl l Handle this document carefully for it contains material protected by international copyright
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LH28F160S3NS-L10
LHF16KA1)
EL128039
200008OI
BJ433
335X150X80
340X310X175
DO14
LH28F160S3NS-L10
LHF16KA1
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Untitled
Abstract: No abstract text available
Text: PRODUCT SPECIFICATIONS Integrated Circuits Group LH28F160S3NS-L10 Flash Memory 16M 2MB x 8/1MB × 16 (Model No.: LHF16KA1) Spec No.: EL128039 Issue Date: August 22, 2000 SHARP LHFlGKAl l Handle this document carefully for it contains material protected by international copyright
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LH28F160S3NS-L10
LHF16KA1)
EL128039
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AN15862A
Abstract: L1137 QFP044-P-1010F
Text: Part No. AN15862A Package Code No. QFP044-P-1010F Publication date: June 2007 nt in ue Pl pl d in ea an c se ed lud pl vi an m m es si tf ed ain ai fo ol t n l ht low disc dis ena ten low tp in o co n an in :// g nt n ce c g pa U in tin t e fo na RL ue ue ype typ ur
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AN15862A
QFP044-P-1010F
SDB00146AEB
AN15862A
L1137
QFP044-P-1010F
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TS PQ4 24
Abstract: TM4C129LNCZAD
Text: mikromedia 5 for Tiva Amazingly compact, all-on-a-single-pcb development board that carries 5’’ TFT Touch Screen and lots of multimedia peripherals, all driven by a powerful TM4C129L X NCZAD TO OUR VALUED CUSTOMERS I want to express my thanks to you for being interested in our products and for having
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TM4C129L
TS PQ4 24
TM4C129LNCZAD
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S105H
Abstract: h13f
Text: Thermal Cut-Off 250 Vac L50N 1 5/10/20/25A L10N 1) 3/8A L50NG900 max. 184 °C) L10N L50NG902 (max. 184°C) L10N Thermal Cut-Off HDMV, HDMH 15A 2) HDMV HDMH L50NG913 (max. 240°C) L10NG911 Plastic or metal housing temperature rating (°C) type Tf Th Tm Tm
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5/10/20/25A
L50NG900
L50NG902
L50NG913
L10NG911
AWG18
S105H
h13f
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D100D
Abstract: C1213A transistor k1213 k1011 k0305 K0116 k1112 K1012 K0115 k1113
Text: AND8077/D GigaCommt SiGe SPICE Modeling Kit Prepared by: Senad Lomigora and Paul Shockman http://onsemi.com APPLICATION NOTE Objective The objective of this kit is to provide sufficient circuit schematic and SPICE parameter information to perform system level interconnect modeling for devices in
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AND8077/D
D100D
C1213A
transistor k1213
k1011
k0305
K0116
k1112
K1012
K0115
k1113
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D100D
Abstract: k1113 K1112 k1011 C1213A C1314A k0305 transistor c1013 k0308 K0216
Text: AND8077/D GigaCommt SiGe SPICE Modeling Kit Prepared by: Senad Lomigora and Paul Shockman http://onsemi.com APPLICATION NOTE Objective The objective of this kit is to provide sufficient circuit schematic and SPICE parameter information to perform system level interconnect modeling for devices in
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AND8077/D
D100D
k1113
K1112
k1011
C1213A
C1314A
k0305
transistor c1013
k0308
K0216
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TFB45A12
Abstract: No abstract text available
Text: SEPA BRUSHLESS FAN TFB45A05, TFB45A12 Pb HIGH RELIABILITY FAN SHAPE AND DIMENSION 42 18.5 2 Pa 1.5 19 1.5 32.5 4 18 1.5 9 90 30 20 40 60 80 100 310 +/-15 TFB45A05 3 25.5 23 +/-0.3 18 +/-0.3 44.5 60 +/-0.8 32 26.5 TFB45A12 6 +/-0.3 l/min 43.5 +/-0.3 mmH O
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TFB45A05,
TFB45A12
TFB45A05
AWG26
L10/MTBF
E54695)
E44247)
D-79108
TFB45A12
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k2225 transistor
Abstract: k1118 k1117 k1213 power transistor k1821 transistor k1213 k1117 transistor K2225 k1518 transistor k1117
Text: AN1560/D Low Voltage ECLinPS and ECLinPS Lite SPICE Modeling Kit 150Prepared by Senad Lomigora and Paul Shockman ON Semiconductor Broadband Application Engineers http://onsemi.com APPLICATION NOTE Objective The objective of this kit is to extend the information given
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AN1560/D
150Prepared
AN1503
k2225 transistor
k1118
k1117
k1213
power transistor k1821
transistor k1213
k1117 transistor
K2225
k1518
transistor k1117
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transistor c1013
Abstract: K0107 transistor c1014 C1013 transistor k0207 transistor k0307 K0915 transistor K0816 8600E spice germanium diode
Text: AND8077/D GigaComm SiGe SPICE Modeling Kit Prepared by: Senad Lomigora and Paul Shockman ON Semiconductor Broadband Application Engineers http://onsemi.com APPLICATION NOTE Objective The objective of this kit is to provide sufficient circuit schematic and SPICE parameter information to perform
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AND8077/D
r14525
AND8077/D
transistor c1013
K0107
transistor c1014
C1013 transistor
k0207
transistor k0307
K0915 transistor
K0816
8600E
spice germanium diode
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56-PIN
Abstract: LH28F320S3TD-L10 TSOP056-P-1420
Text: SHARP LH28F320S3TD-L10 LH28F320S3TD-L10 32 M-bit 2 MB x 8/1 MB x 16 x 2-Bank Smart 3 Dual Work Flash Memory DESCRIPTION The LH28F320S3TD-L10 Dual W ork flash memory • Scalable Command Set (SCS) with Smart 3 technology is a high-density, low-cost, • High performance read access time
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LH28F320S3TD-L10
LH28F320S3TD-L10
56-pin
TSOP056-P-1420)
TSOP056-P-1420
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Untitled
Abstract: No abstract text available
Text: SHARP PRODUCT PREVIEW Rev. 1.3 LH28F160S3-L10/13 16-MBIT 2MBx8/1MBx16 Smart 3 Flash MEMORY Smart 3 Technology — 2.7V or 3.3V Vcc — 2.7V, 3.3V or 5V VPP Common Flash Interface (CFI) — Universal & Upgradable Interface Scalable Command Set (SCS) High Speed Write Performance
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LH28F160S3-L10/13
16-MBIT
2MBx8/1MBx16)
100/130ns
120/150ns
64-Kbyte
100ns
120ns
130ns
150ns
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phase controller L120
Abstract: AMD flash ETOX
Text: SHARP PRODUCT PREVIEW Rev. 1.3 LH28F160S3-L10/13 16-M BIT 2MBX8/1 MBx16 Sm art 3 Flash MEMORY • Smart 3 Technology — 2.7V or 3.3V Vcc — 2.7V, 3.3V or 5V VPP User-Configurable x8 or x16 Operation ■ Common Flash interface (CFI) — Universal & Upgradable Interface
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LH28F160S3-L10/13
16-MBIT
MBx16)
100/130ns
120/150ns
56-Lead
64-Lead
phase controller L120
AMD flash ETOX
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10DN
Abstract: 27110 2150C REP50n
Text: DATE 1 -5 -9 8 REVISIONS E .C .N . □RAWING NUM BER REV Q E D -P T -3 0 4 R 2 A REV « 0 B R D R ./ A ELECTRO-OPTICAL CHARACTERISTICS TA = 2 5 'C PARAMETER e .8 oc o.iio] E.80C0.L10] SYMBOL TEST CONDITION MIN •nrp MAX 1000 UNIT nA COLLECTOR DARK CURRENT
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140E0
QED-PT-304R2
REP50N5E
10DN
27110
2150C
REP50n
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET TRANSCEIVER MODULE NL1000 3.3 V, SMALL PACKAGE IrDA COMPLIANT TRANSCEIVER MODULE DATA RATE: 2.4 k to 115.2 kbps DESCRIPTION T h e N L10 00 is a sm all pa ckag e tra n s c e iv e r m odule for IrDA V er.1 .0 . T h is m odule in co rp o ra te s an in fra re d Rays
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NL1000
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1045y
Abstract: 1046h 1044G 1052Y 1046Y gl 1046g 1051G 1043H GL-104 1042H
Text: COLLINS ELECTRONICS CORP 3ME D 2233170 DOOaOOb b W?=^r2L Led Indicator Lamps U LED IN D IC A TO R LA M PS 1 2x2 + a » 11 11 r -mu j 'l I1 11 - 2 x 4 .5 1 mm 2 .5 x 5 i Tf •■ 2 .5 X 7 .5 ia J1 A 2 x 2 .5 Ì T 2x5 i j I1 7 3 x 4 .5 C o lo r Em itting m a te ria l
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r-4t-21
GH038H
GH038G
GH038Y
GL-1039H
GL-1039G
GL-1039Y
GL-1040H
GL-1040G
GL-1040Y
1045y
1046h
1044G
1052Y
1046Y
gl 1046g
1051G
1043H
GL-104
1042H
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KM41C4000/L
Abstract: KM41C4000
Text: SAMSUNG ELECTRONICS INC M 2E D 7^4142 QQ1D1S7 b ISM6K CMOS DRAM KM41C4000/L 4 M X 1 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: tR A C tC A C tflC K M 41C 4000/L- 8 80ns 20ns 150ns K M 41C 4000/L-10 100ns 25ns
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KM41C4000/L
4000/L-
150ns
4000/L-10
100ns
180ns
cycles/16ms
cycles/128ms
T-46-23-15
KM41C4000/L
KM41C4000
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DIN 16901 130 plastic
Abstract: DIN 16901 150 DIN 16901 130 A6211 V42254-A6109-L1 DIN 16901 110 2G109 ng 52 5-1393561-6 a6210
Text: 2 c/i tf> •_ Xi « O O Ç It pc,—-C6'C ÌA -c W» £o° -55 «.%-o.gI IeS ISc«« S «« t C Ï o <tB 2 Ï * • £«uo c » w.£ s re u^< -Cû CEr — > .5 D C <q ^ JjT £ O -O w w C M Û ft « #0« W»Ä fflü t WÈ Cy ? «» 5s S C 3? ".S OS ^8g«o.2° «Oc
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V42254-A6000-G*
DIN 16901 130 plastic
DIN 16901 150
DIN 16901 130
A6211
V42254-A6109-L1
DIN 16901 110
2G109
ng 52
5-1393561-6
a6210
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Untitled
Abstract: No abstract text available
Text: s -n o y 0 0 1 8 9 1 tfY i ^ j& P R E L IM IN A R Y f t SEMICONDUCTOR HY51C64 65,536X1-Bit CMOS Dynamic RAM FEBRUARY 1986 DESCRIPTION The HY51C64 is a high speed 65,536 bit CMOS dynamic Random Access Memory. Fabricated in CMOS technology, the HY51C64 offers features not
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HY51C64
536X1-Bit
HY51C64
16-pin
100ns
120ns
150ns
K29793/4
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Untitled
Abstract: No abstract text available
Text: Cooling aggregates with axial fan Hollow-fin cooling aggregates - g e o m e try o f h o llo w fin o p im isin g the a ir flo w - p a rtic u la rly effective heat dissipation - c o m p a c t construction - s e m ic o n d u c to r m o u n tin g surface fo r m illed fla t
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E2-15
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