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    L1 SOT143 Search Results

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    Catalog Datasheet MFG & Type PDF Document Tags

    sy10s897jc

    Abstract: cmos tsmc 0.18 A103267 0.18 tsmc BCD sy10s897 MIC29300BU BGA289 Unisem MIC2287 SPN860003
    Text: EXTENDED TEMPERATURE CYCLE Ta Delta = -65C to +150C MSL Pkg Lds Device D/C Process Qty Cyc. L3 BGA 289 KS8695PX 0421A L3 BGA 289 KS8695PX 0407 L1 L1 P.DIP P.DIP 24 40 MIC59P50 MIC10937P L2 L2 L2 L2 L2 L2 L2 L2 L2 L2 L2 L2 L2 L2 L2 L2 L2 L2 L2 L2 L2 L2 L2 L2


    Original     		PDF KS8695PX MIC59P50 MIC10937P MIC2214PM MIC2198 SY88953L MIC2550 sy10s897jc cmos tsmc 0.18 A103267 0.18 tsmc BCD sy10s897 MIC29300BU BGA289 Unisem MIC2287 SPN860003

    transistor p2w

    Abstract: No abstract text available
    Text: 06011 Only One Name Means ProTek’Tion SOT-143 PACKAGE OUTLINE & DIMENSIONS PACKAGE OUTLINE SOT-143 A G L PACKAGE DIMENSIONS J S B MILLIMETERS MIN MAX DIM L1 A B C D F G H J K L L1 R S K D F H C R MOUNTING PAD X Yx3 m n 1.2 x 0.9 0.85 x 0.85 2.0 1.9 m


    Original     		PDF OT-143 OT-143 transistor p2w

    TO253

    Abstract: transistor k 790 PLCC-20
    Text: Package Information Tape and Reel Option for TSSOP, 8-Pin F BB BB E ØJ AA B H A C1 C ØK D G AA L M M1 L2 ØM L1 QL SECTION BB Siliconix 24-Sep-96 SECTION AA Dim A B C C1 D E F G H ØJ ØK L L1 L2 QL M M1 ØM Millimeters Min Max 15.70 16.30 1.65 1.85 3.50


    Original     		PDF 24-Sep-96 O-237 O-236 OT-23) O-253 OT-143) TO253 transistor k 790 PLCC-20

    TO253

    Abstract: PLCC-20 1307 TRANSISTOR TO-253 SILICONIX
    Text: Package Information Tape and Reel Option for TSSOP, 8-Pin F BB BB E ØJ AA B H A C1 C ØK D G AA L M M1 L2 ØM L1 QL SECTION BB Siliconix 24-Sep-96 SECTION AA Dim A B C C1 D E F G H ØJ ØK L L1 L2 QL M M1 ØM Millimeters Min Max 15.70 16.30 1.65 1.85 3.50


    Original     		PDF 24-Sep-96 O-237 O-236 OT-23) O-253 OT-143) TO253 PLCC-20 1307 TRANSISTOR TO-253 SILICONIX

    527AF

    Abstract: to253 to-253 sot143-4
    Text: MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS SOT−143, 4 Lead CASE 527AF−01 ISSUE A DATE 24 MAR 2009 SYMBOL MIN A 0.80 1.22 D A1 0.05 0.15 e A2 0.75 b 0.30 0.50 b2 0.76 0.89 4 3 E1 1 E c 0.08 D 2.80 E 2.10 E1 1.20 e 2 0.40 L1 0.20 2.90 2.64 1.30 0.50 0°


    Original     		PDF OT-143, 527AF-01 O-253. 98AON34306E 527AF 527AF to253 to-253 sot143-4

    Field-Effect Transistors

    Abstract: SOT54variant diodes PACKAGE
    Text: DISCRETE SEMICONDUCTORS Package outlines Small-signal Field-effect Transistors and Diodes 1999 May 11 PACKAGE INFORMATION Page SOD68 . SOD110 . SOD323 . SOD523 . SOT23 . SOT54 . SOT54variant . SOT143B . SOT143R . SOT323 . SOT343N


    Original     		PDF OD110 OD323 OD523 OT54variant OT143B OT143R OT323 OT343N OT343R OT363 Field-Effect Transistors SOT54variant diodes PACKAGE

    RF Wideband Transistors

    Abstract: No abstract text available
    Text: PACKAGE OUTLINES Package SOT23 SOT54 SOT54variant SOT89 SOT122A SOT143B SOT143R SOT172A1 SOT172A2 SOT223 SOT323 SOT343N SOT343R SOT353 SOT363 Surface-mount yes no no yes no yes yes no no yes yes yes yes yes yes Page . . . . . . . .


    Original     		PDF OT54variant OT122A OT143B OT143R OT172A1 OT172A2 OT223 OT323 OT343N OT343R RF Wideband Transistors

    GCDA15C

    Abstract: No abstract text available
    Text: GCDA15C-1 Vishay Semiconductors Low Capacitance Bidirectional ESD Protection Diode in SOT143 3D Top View Pinning-Schematic Features • 1-line ESD protection silicon diode • ESD Immunity ± 30 kV e3 acc. IEC 61000-4-2 • Very low capacitance < 2 pF • Bidirectional, Symmetrical clamping behaviour


    Original     		PDF GCDA15C-1 OT143 2002/95/EC 2002/96/EC GCDA15C-1 GCDA15C-1-GS08 OT143 D-74025 17-Mar-06 GCDA15C

    GCDA15C-1

    Abstract: GCDA15C-1-GS08
    Text: GCDA15C-1 Vishay Semiconductors Low Capacitance Bidirectional ESD Protection Diode in SOT143 3D Top View Pinning-Schematic Features • 1-line ESD protection silicon diode • ESD Immunity ± 30 kV e3 acc. IEC 61000-4-2 • Very low capacitance < 2 pF • Bidirectional, Symmetrical clamping behaviour


    Original     		PDF GCDA15C-1 OT143 2002/95/EC 2002/96/EC GCDA15C-1-GS08 08-Apr-05 GCDA15C-1 GCDA15C-1-GS08

    RF Wideband Transistors

    Abstract: MS-012AA
    Text: PACKAGE OUTLINES Package SOT23 SOT54 SOT89 SOT96-1 SOT122A SOT122D SOT122E SOT143B SOT143R SOT172A1 SOT172A2 SOT223 SOT323 SOT343N SOT343R SOT353 SOT363 SOT551A Surface-mount yes no yes yes no no no yes yes no no yes yes yes yes yes yes yes Page . .


    Original     		PDF OT96-1 OT122A OT122D OT122E OT143B OT143R OT172A1 OT172A2 OT223 OT323 RF Wideband Transistors MS-012AA

    TRANSISTOR L2

    Abstract: transistor bf 194 E C B
    Text: BFG325/XR NPN 14 GHz wideband transistor Rev. 01 — 2 February 2005 Product data sheet 1. Product profile 1.1 General description NPN silicon planar epitaxial transistor in a 4-pin dual-emitter SOT143R plastic package. 1.2 Features • ■ ■ ■ High power gain


    Original     		PDF BFG325/XR OT143R TRANSISTOR L2 transistor bf 194 E C B

    transistor l2

    Abstract: No abstract text available
    Text: BFG310/XR NPN 14 GHz wideband transistor Rev. 01 — 2 February 2005 Product data sheet 1. Product profile 1.1 General description NPN silicon planar epitaxial transistor in a 4-pin dual-emitter SOT143R plastic package. 1.2 Features • ■ ■ ■ High power gain


    Original     		PDF BFG310/XR OT143R transistor l2

    SY68730ZC

    Abstract: MIC29302BT SY68730 sy10s897 0343a KS8721BL Unisem tsmc cmos tsmc cmos 0.35 KSZ8695PX
    Text: Autoclave Pressure Pot Test + 121C / 15 PSIG (With Pre-con 3X Reflow ) MSL Pkg Lds Device D/C Process Qty Hours Rej Assembler L3 L3 L3 L3 BGA BGA BGA BGA 289 289 289 289 KS8695PX KS8695PX KS8695PX KSZ8695PX 0407 0421A 0417A 0452A TSMC .18 TSMC .18 TSMC .18


    Original     		PDF KS8695PX KSZ8695PX KS8721BL KS8995M KS8995X KS8995E SY68730ZC MIC29302BT SY68730 sy10s897 0343a KS8721BL Unisem tsmc cmos tsmc cmos 0.35 KSZ8695PX

    Untitled

    Abstract: No abstract text available
    Text: BFG310/XR NPN 14 GHz wideband transistor Rev. 2 — 15 September 2011 Product data sheet 1. Product profile 1.1 General description NPN silicon planar epitaxial transistor in a 4-pin dual-emitter SOT143R plastic package. 1.2 Features and benefits   


    Original     		PDF BFG310/XR OT143R BFG310

    PowerDI5060-8L

    Abstract: DFN1006-2 DFN1006-3 DFN1006H4-2 DFN1006H4-3 DFN1310H4-6 DFN1411-3 DFN1612-6 DFN1616-6 DFN1616-8
    Text: PACKAGE OUTLINE DIMENSIONS Surface Mount Packages DFN1006-2 / DFN1006H4-2 A DFN1006-2 Dim Min Max Typ A 0.47 0.53 0.50 A1 0.05 0.03 b 0.45 0.55 0.50 D 0.95 1.075 1.00 E 0.55 0.675 0.60 e 0.40 L 0.20 0.30 0.25 R 0.05 0.15 0.10 All Dimensions in mm A1 D R E


    Original     		PDF DFN1006-2 DFN1006H4-2 DFN1006-2 DFN1006-3 DFN1006H4-3 DFN1006-3 O92-3L AP02002 PowerDI5060-8L DFN1006H4-2 DFN1006H4-3 DFN1310H4-6 DFN1411-3 DFN1612-6 DFN1616-6 DFN1616-8

    do-201 package

    Abstract: DFN2020-3 SOD 523 0.85-1.25 DP SOT523 DFN1006-3 dfn3030-8 DFN1006-2 DFN1006H4-2 GBJ 1005 DFN1310H4-6
    Text: PACKAGE OUTLINE DIMENSIONS Surface Mount Packages DFN1006-2 / DFN1006H4-2 A DFN1006-2 Dim Min Max Typ A 0.47 0.53 0.50 A1 0.05 0.03 b 0.45 0.55 0.50 D 0.95 1.075 1.00 E 0.55 0.675 0.60 e 0.40 L 0.20 0.30 0.25 R 0.05 0.15 0.10 All Dimensions in mm A1 D R E


    Original     		PDF DFN1006-2 DFN1006H4-2 DFN1006-2 DFN1006-3 DFN1006H4-3 DFN1006-3 O92-3L AP02002 do-201 package DFN2020-3 SOD 523 0.85-1.25 DP SOT523 dfn3030-8 DFN1006H4-2 GBJ 1005 DFN1310H4-6

    Untitled

    Abstract: No abstract text available
    Text: BFG325/XR NPN 14 GHz wideband transistor Rev. 2 — 15 September 2011 Product data sheet 1. Product profile 1.1 General description NPN silicon planar epitaxial transistor in a 4-pin dual-emitter SOT143R plastic package. 1.2 Features and benefits   


    Original     		PDF BFG325/XR OT143R BFG325

    .H2 sot89

    Abstract: DFN1006-2 DFN1006-3 DFN1006H4-2 DFN1006H4-3 DFN1310H4-6 DFN1411-3 DFN1612-6 DFN1616-6 DFN1616-8
    Text: PACKAGE OUTLINE DIMENSIONS Surface Mount Packages DFN1006-2 / DFN1006H4-2 A DFN1006-2 Dim Min Max Typ A 0.47 0.53 0.50 A1 0.05 0.03 b 0.45 0.55 0.50 D 0.95 1.075 1.00 E 0.55 0.675 0.60 e 0.40 L 0.20 0.30 0.25 R 0.05 0.15 0.10 All Dimensions in mm A1 D R E


    Original     		PDF DFN1006-2 DFN1006H4-2 DFN1006-2 DFN1006-3 DFN1006H4-3 DFN1006-3 O92-3L AP02002 .H2 sot89 DFN1006H4-2 DFN1006H4-3 DFN1310H4-6 DFN1411-3 DFN1612-6 DFN1616-6 DFN1616-8

    SOT-95

    Abstract: TO-252-4L sc59 dfn3030-8 MSOP-10 powerdi 123 DFN1006-3 DFN1006H4-2 WL-CSP1010H6-4 DFN1310H4-6
    Text: PACKAGE OUTLINE DIMENSIONS Surface Mount Packages DFN1006-2 / DFN1006H4-2 A DFN1006-2 Dim Min Max Typ A 0.47 0.53 0.50 A1 0.05 0.03 b 0.45 0.55 0.50 D 0.95 1.075 1.00 E 0.55 0.675 0.60 e 0.40 L 0.20 0.30 0.25 R 0.05 0.15 0.10 All Dimensions in mm A1 D R E


    Original     		PDF DFN1006-2 DFN1006H4-2 DFN1006-2 DFN1006-3 DFN1006H4-3 DFN1006-3 O92-3L AP02002 SOT-95 TO-252-4L sc59 dfn3030-8 MSOP-10 powerdi 123 DFN1006H4-2 WL-CSP1010H6-4 DFN1310H4-6

    transistor l2

    Abstract: transistor bf 194
    Text: BFG325/XR NPN 14 GHz wideband transistor Rev. 2 — 15 September 2011 Product data sheet 1. Product profile 1.1 General description NPN silicon planar epitaxial transistor in a 4-pin dual-emitter SOT143R plastic package. 1.2 Features and benefits   


    Original     		PDF BFG325/XR OT143R BFG325 transistor l2 transistor bf 194

    MLC850

    Abstract: equivalent for transistor tt 2222 RF Power Transistor spice 2222 031 capacitor philips TT 2222 npn "RF Power Transistor" transistor tt 2222 NPN planar RF transistor NPN RF Amplifier RF POWER TRANSISTOR
    Text: Product specification Philips Semiconductors NPN 2 G H z R F pow er transisto r BFG11 ; BFG 11/X FEATURES DESCRIPTION • High power gain NPN silicon planar epitaxial transistors encapsulated in a plastic, 4-pin dual-emitter SOT143 package. • High efficiency


    OCR Scan     		PDF BFG11 BFG11/X OT143 BFG11 BFG11/X OT143. 711DflSb MLC850 equivalent for transistor tt 2222 RF Power Transistor spice 2222 031 capacitor philips TT 2222 npn "RF Power Transistor" transistor tt 2222 NPN planar RF transistor NPN RF Amplifier RF POWER TRANSISTOR

    Untitled

    Abstract: No abstract text available
    Text: Philips Semiconductors Data sheet status Product specification date of issue April 1995 FEATURES • Short channel transistor with high ratio IVfsi^Cis. • Low noise gain controlled amplifier to 1 GHz. DESCRIPTION Depletion type field-effect transistor in a plastic SOT143R microminiature


    OCR Scan     		PDF BF998R OT143R

    transistor smd zG

    Abstract: npn zg SMD Transistor zG TRANSISTOR 610 smd
    Text: Philips Sem iconductors Product specification NPN 3 GHz wideband transistor DESCRIPTION BFG17A PINNING NPN wideband transistor in a microminiature plastic SOT143 surface mounting envelope with double emitter bonding. PIN 4 DESCRIPTION 3 Code: E6 It is intended for use in wideband


    OCR Scan     		PDF OT143 BFG17A MSB014 OT143. 711062fci 711062b 7110A2L transistor smd zG npn zg SMD Transistor zG TRANSISTOR 610 smd

    smd transistor fq 30

    Abstract: BFG17A TRANSISTOR 610 smd
    Text: Philips Semiconductors Product specification NPN 3 GHz wideband transistor DESCRIPTION BFG17A PINNING NPN wideband transistor in a microminiature plastic SOT143 surface mounting envelope with double emitter bonding. PIN 4 DESCRIPTION 3 Code: E6 It is intended for use in wideband


    OCR Scan     		PDF BFG17A OT143 M5B014 OT143. MBB376 711002b smd transistor fq 30 BFG17A TRANSISTOR 610 smd