IRFR5305
Abstract: IRFU5305 63 marking code diode
Text: PD-95025A IRFR5305PbF IRFU5305PbF l l l l l l l Ultra Low On-Resistance Surface Mount IRFR5305 Straight Lead (IRFU5305) Advanced Process Technology Fast Switching Fully Avalanche Rated Lead-Free HEXFET Power MOSFET D VDSS = -55V RDS(on) = 0.065Ω G ID = -31A
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PD-95025A
IRFR5305PbF
IRFU5305PbF
IRFR5305)
IRFU5305)
IRFU120
IRFR/U5305PbF
O-252AA)
EIA-481
EIA-541.
IRFR5305
IRFU5305
63 marking code diode
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IRF Power MOSFET code marking
Abstract: IRFR5305 IRFU5305 IRF 100A IRFR5305PBF
Text: PD-95025A IRFR5305PbF IRFU5305PbF l l l l l l l Ultra Low On-Resistance Surface Mount IRFR5305 Straight Lead (IRFU5305) Advanced Process Technology Fast Switching Fully Avalanche Rated Lead-Free HEXFET Power MOSFET D VDSS = -55V RDS(on) = 0.065Ω G ID = -31A
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PD-95025A
IRFR5305PbF
IRFU5305PbF
IRFR5305)
IRFU5305)
AN-994.
IRFR/U5305PbF
O-251AA)
IRF Power MOSFET code marking
IRFR5305
IRFU5305
IRF 100A
IRFR5305PBF
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IRFR5305
Abstract: IRFR P-Channel MOSFET IRFU5305PbF IRFU5305
Text: PD-95025A IRFR5305PbF IRFU5305PbF l l l l l l l Ultra Low On-Resistance Surface Mount IRFR5305 Straight Lead (IRFU5305) Advanced Process Technology Fast Switching Fully Avalanche Rated Lead-Free HEXFET Power MOSFET D VDSS = -55V RDS(on) = 0.065Ω G ID = -31A
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PD-95025A
IRFR5305PbF
IRFU5305PbF
IRFR5305)
IRFU5305)
O-252AA)
EIA-481
EIA-541.
EIA-481.
IRFR5305
IRFR P-Channel MOSFET
IRFU5305PbF
IRFU5305
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IRFR5305
Abstract: IRFU5305 irf5305 IRFR5305PBF IRFU5305PbF
Text: PD-95025A IRFR5305PbF IRFU5305PbF l l l l l l l Ultra Low On-Resistance Surface Mount IRFR5305 Straight Lead (IRFU5305) Advanced Process Technology Fast Switching Fully Avalanche Rated Lead-Free HEXFET Power MOSFET D VDSS = -55V RDS(on) = 0.065Ω G ID = -31A
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PD-95025A
IRFR5305PbF
IRFU5305PbF
IRFR5305)
IRFU5305)
moun16
EIA-481
EIA-541.
EIA-481.
IRFR5305
IRFU5305
irf5305
IRFR5305PBF
IRFU5305PbF
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Untitled
Abstract: No abstract text available
Text: PD-95025A IRFR5305PbF IRFU5305PbF l l l l l l l Ultra Low On-Resistance Surface Mount IRFR5305 Straight Lead (IRFU5305) Advanced Process Technology Fast Switching Fully Avalanche Rated Lead-Free HEXFET Power MOSFET D VDSS = -55V RDS(on) = 0.065Ω G ID = -31A
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PD-95025A
IRFR5305PbF
IRFU5305PbF
IRFR5305)
IRFU5305)
EIA-481
EIA-541.
EIA-481.
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Untitled
Abstract: No abstract text available
Text: PD - 94836 IRFIZ44NPbF HEXFET Power MOSFET l l l l l l Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS
Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated Lead-Free D VDSS = 55V RDS on = 0.024Ω G ID = 31A S Description
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IRFIZ44NPbF
O-220
I840G
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IRFz44n equivalent
Abstract: k3432 IRFZ44N 12v input 55v output using irfz44n circuit
Text: PD - 94836 IRFIZ44NPbF l l l l l l Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS
Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated Lead-Free HEXFET Power MOSFET D VDSS = 55V RDS on = 0.024Ω G ID = 31A S Description
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IRFIZ44NPbF
O-220
I840G
IRFz44n equivalent
k3432
IRFZ44N
12v input 55v output using irfz44n circuit
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IRFz44n equivalent
Abstract: 12v input 55v output using irfz44n circuit IRFZ44N for irfz44n
Text: PD - 94836 IRFIZ44NPbF l l l l l l Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS
Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated Lead-Free HEXFET Power MOSFET D VDSS = 55V RDS on = 0.024Ω G ID = 31A S Description
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IRFIZ44NPbF
O-220
I840G
IRFz44n equivalent
12v input 55v output using irfz44n circuit
IRFZ44N
for irfz44n
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IRF5305
Abstract: 55V MOSFET P-Channel k 524 ir
Text: PD - 91385B IRF5305 HEXFET Power MOSFET l l l l l l Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching P-Channel Fully Avalanche Rated D VDSS = -55V RDS on = 0.06Ω G ID = -31A S Description Fifth Generation HEXFETs from International Rectifier
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91385B
IRF5305
O-220
IRF5305
55V MOSFET P-Channel
k 524 ir
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EK 110
Abstract: IRF5305
Text: PD - 9.1385A IRF5305 HEXFET Power MOSFET l l l l l l Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching P-Channel Fully Avalanche Rated D VDSS = -55V RDS on = 0.06Ω G ID = -31A S Description Fifth Generation HEXFETs from International Rectifier
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IRF5305
O-220
EK 110
IRF5305
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Untitled
Abstract: No abstract text available
Text: PD - 91385B IRF5305 HEXFET Power MOSFET l l l l l l Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching P-Channel Fully Avalanche Rated D VDSS = -55V RDS on = 0.06Ω G ID = -31A S Description Fifth Generation HEXFETs from International Rectifier
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91385B
IRF5305
O-220
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IRF5305
Abstract: No abstract text available
Text: PD - 91385B IRF5305 HEXFET Power MOSFET l l l l l l Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching P-Channel Fully Avalanche Rated D VDSS = -55V RDS on = 0.06Ω G ID = -31A S Description Fifth Generation HEXFETs from International Rectifier
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91385B
IRF5305
O-220
IRF5305
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IRF5305
Abstract: EPF12 borg
Text: PD - 901385B IRF5305 HEXFET Power MOSFET l l l l l l Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching P-Channel Fully Avalanche Rated D VDSS = -55V RDS on = 0.06Ω G ID = -31A S Description Fifth Generation HEXFETs from International Rectifier
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901385B
IRF5305
O-220
IRF5305
EPF12
borg
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IRFR5305
Abstract: IRFU5305 IRF5305
Text: PD - 91402A IRFR/U5305 HEXFET Power MOSFET l l l l l l Ultra Low On-Resistance Surface Mount IRFR5305 Straight Lead (IRFU5305) Advanced Process Technology Fast Switching Fully Avalanche Rated D VDSS = -55V RDS(on) = 0.065Ω G ID = -31A S Description Fifth Generation HEXFETs from International Rectifier utilize
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1402A
IRFR/U5305
IRFR5305)
IRFU5305)
IRFR5305
IRFU5305
IRF5305
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IRFR5305
Abstract: IRFU5305
Text: PD - 91402A IRFR/U5305 HEXFET Power MOSFET l l l l l l Ultra Low On-Resistance Surface Mount IRFR5305 Straight Lead (IRFU5305) Advanced Process Technology Fast Switching Fully Avalanche Rated D VDSS = -55V RDS(on) = 0.065Ω G ID = -31A S Description Fifth Generation HEXFETs from International Rectifier utilize
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1402A
IRFR/U5305
IRFR5305)
IRFU5305)
i2-7105
IRFR5305
IRFU5305
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IRFR5305
Abstract: No abstract text available
Text: IRFR/U5305 l l l l l l Ultra Low On-Resistance Surface Mount IRFR5305 Straight Lead (IRFU5305) Advanced Process Technology Fast Switching Fully Avalanche Rated D VDSS = -55V RDS(on) = 0.065Ω G ID = -31A S D-Pak IRFR5305 I-Pak IRFU5305 Description The D-Pak is designed for surface mounting using vapor
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IRFR/U5305
IRFR5305)
IRFU5305)
IRFR5305
IRFU5305
O-251AA)
O-252AA)
IRFR5305
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7912A
Abstract: irfp31n50 IRFP31N50L 152x 247Package
Text: PD - 94081 SMPS MOSFET IRFP31N50L Applications HEXFET Power MOSFET l Switch Mode Power Supply SMPS l UninterruptIble Power Supply VDSS RDS(on) typ. ID l High Speed Power Switching 500V 0.15Ω 31A l ZVS and High Frequency Circuit l PWM Inverters Benefits
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IRFP31N50L
O-247AC
7912A
irfp31n50
IRFP31N50L
152x
247Package
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B1370
Abstract: R B1370 IRFz44n equivalent MOSFET IRFZ44N for irfz44n IRF1010 MOSFET TO-220 IRFIZ44N
Text: PD - 9.1403B IRFIZ44N l l l l l Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS
Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated HEXFET Power MOSFET D VDSS = 55V RDS on = 0.024Ω G ID = 31A S Description Fifth Generation HEXFETs from International Rectifier
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1403B
IRFIZ44N
O-220
B1370
R B1370
IRFz44n equivalent
MOSFET IRFZ44N
for irfz44n
IRF1010 MOSFET TO-220
IRFIZ44N
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IRFz44n equivalent
Abstract: IRFIZ44N IRFZ44N IRFIZ44N equivalent irf 630
Text: PD - 9.1403A IRFIZ44N HEXFET Power MOSFET l l l l l Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS
Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated D VDSS = 55V RDS on = 0.024Ω G ID = 31A S Description Fifth Generation HEXFETs from International Rectifier
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IRFIZ44N
O-220
IRFz44n equivalent
IRFIZ44N
IRFZ44N
IRFIZ44N equivalent
irf 630
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IRFz44n equivalent
Abstract: datasheet of irfz44n IRF1010 IRFI840G IRFIZ44N IRFZ44N
Text: PD - 9.1403B IRFIZ44N l l l l l Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS
Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated HEXFET Power MOSFET D VDSS = 55V RDS on = 0.024Ω G ID = 31A S Description Fifth Generation HEXFETs from International Rectifier
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1403B
IRFIZ44N
O-220
IRFz44n equivalent
datasheet of irfz44n
IRF1010
IRFI840G
IRFIZ44N
IRFZ44N
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Untitled
Abstract: No abstract text available
Text: PD - 9.1403B IRFIZ44N HEXFET Power MOSFET l l l l l Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS
Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated D VDSS = 55V RDS on = 0.024Ω G ID = 31A S Description Fifth Generation HEXFETs from International Rectifier
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1403B
IRFIZ44N
O-220
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Untitled
Abstract: No abstract text available
Text: PD - 97766 AUTOMOTIVE GRADE AUIRLI2505 Features l l l l l l l l l l Advanced Planar Technology Logic-Level Gate Drive Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Repetitive Avalanche Allowed up to
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AUIRLI2505
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IRF8302M
Abstract: No abstract text available
Text: IRF8302MPbF l l l l l l l l l l l RoHs Compliant and Halogen-Free HEXFET Power MOSFET plus Schottky Diode Integrated Monolithic Schottky Diode Typical values unless otherwise specified Low Profile (<0.7 mm) VDSS VGS RDS(on) RDS(on) Dual Sided Cooling Compatible
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IRF8302MPbF
IRF8302M
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l33a
Abstract: l69b L37B l37a L33B L68B L33A SMD l71b l47B L120B
Text: Mechanical Outlines - LED C A SE L-18b C A SE L-19b -01.8 0.07 -01.8(0.07) 04.0(0.16) 0.75(0.03) max athode athode -2.54(0.1) -2.54(0.1) C A SE L-22b C A SE L-30b -05.0(0.2) 03.55 (0.14) athode -2.54(0.1) -2.54(0.1) C A SE L-31a L-31b C A SE L-32a L-32b 02.94
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L-18b
L-19b
L-22b
L-30b
L-31a
L-31b
L-32a
L-32b
L-31b
l33a
l69b
L37B
l37a
L33B
L68B
L33A SMD
l71b
l47B
L120B
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