DBP-1617N530
Abstract: No abstract text available
Text: Wireless Products Electromechanical RF Switches Active Components Passive Components RF Radiation Safety Products Power Meters/Monitors Main Menu Standard Communication Band Amplifiers Ku BAND, HIGH POWER LINEAR AMPLIFIERS SPECIFICATIONS MODEL NUMBER FREQUENCY
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DBP-1617N530
DBP-1819N530
DBP-1617N530
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RF remote control 10 MHz 17 Pin
Abstract: RF power amplifier MHz
Text: BLOCK UPCONVERTERS FOR INTEGRATION IN HIGH POWER AMPLIFIERS Ka-Band Model C-, X-, Ku- and DBS-Band Models FEATURES • 32 dB attenuation control • 10 MHz reference input on RF input or external reference input connector • Analog and RS485 remote control
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RS485
RS485.
UPBA-13
UPBA-14
UPBA-17
UPBA-28
04G2/Hz
D-301B
RF remote control 10 MHz 17 Pin
RF power amplifier MHz
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SEMP 690
Abstract: No abstract text available
Text: SPG-14 SATCOM PRODUCT GUIDE CONTENTS Attenuators. 3 Amplifiers. 4-5
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SPG-14
SEMP 690
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KU band rf amplifiers
Abstract: mgfk41a4045
Text: < X/Ku band internally matched power GaAs FET > MGFK41A4045 14.0 – 14.5 GHz BAND / 12W DESCRIPTION OUTLINE DRAWING The MGFK41A4045 is an internally impedance-matched GaAs power FET especially designed for use in 14.0 – 14.5 GHz band amplifiers. The hermetically sealed metal-ceramic
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MGFK41A4045
MGFK41A4045
41dBm
KU band rf amplifiers
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Untitled
Abstract: No abstract text available
Text: < X/Ku band internally matched power GaAs FET > MGFK41A4045 14.0 – 14.5 GHz BAND / 12W DESCRIPTION OUTLINE DRAWING The MGFK41A4045 is an internally impedance-matched GaAs power FET especially designed for use in 14.0 – 14.5 GHz band amplifiers. The hermetically sealed metal-ceramic
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MGFK41A4045
MGFK41A4045
41dBm
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ATF-35176
Abstract: ina10386 lnb downconverter schematic diagram ATF-35576 ATF35176 INA-10386 AN-A008 micro-X ceramic Package lna fet ATF13036 LNB down converter for Ku band
Text: Direct Broadcast Satellite Systems Application Note A009 NOTE: This publication is a reprint of a previously published Application Note and is for technical reference only. For more current information, see the following publications: • AN1091, 1 and 2 Stage 10.7 to 12.7 GHz Amplifiers Using the
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AN1091,
ATF-36163
5965-1235E.
AN1136,
5966-2488E.
AN1139,
INA-51063
5091-8819E
5968-3629E
ATF-35176
ina10386
lnb downconverter schematic diagram
ATF-35576
ATF35176
INA-10386
AN-A008
micro-X ceramic Package lna fet
ATF13036
LNB down converter for Ku band
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Untitled
Abstract: No abstract text available
Text: < X/Ku band internally matched power GaAs FET > MGFK33V4045 14.0 – 14.5 GHz BAND / 2W DESCRIPTION The MGFK33V4045 is an internally impedance-matched GaAs power FET especially designed for use in 14.0 – 14.5 GHz band amplifiers. The hermetically sealed metal-ceramic
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MGFK33V4045
MGFK33V4045
700mA
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Untitled
Abstract: No abstract text available
Text: < X/Ku band internally matched power GaAs FET > MGFK33V4045 14.0 – 14.5 GHz BAND / 2W DESCRIPTION The MGFK33V4045 is an internally impedance-matched GaAs power FET especially designed for use in 14.0 – 14.5 GHz band amplifiers. The hermetically sealed metal-ceramic
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MGFK33V4045
MGFK33V4045
700mA
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Untitled
Abstract: No abstract text available
Text: < X/Ku band internally matched power GaAs FET > MGFK37V4045 14.0 – 14.5 GHz BAND / 5.5W DESCRIPTION The MGFK37V4045 is an internally impedance-matched GaAs power FET especially designed for use in 14.0 – 14.5 GHz band amplifiers. The hermetically sealed metal-ceramic
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MGFK37V4045
MGFK37V4045
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Untitled
Abstract: No abstract text available
Text: < X/Ku band internally matched power GaAs FET > MGFK35V4045 14.0 – 14.5 GHz BAND / 3.5W DESCRIPTION The MGFK35V4045 is an internally impedance-matched GaAs power FET especially designed for use in 14.0 – 14.5 GHz band amplifiers. The hermetically sealed metal-ceramic
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MGFK35V4045
MGFK35V4045
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35W amplifiers
Abstract: No abstract text available
Text: < X/Ku band internally matched power GaAs FET > MGFK35V4045 14.0 – 14.5 GHz BAND / 3.5W DESCRIPTION The MGFK35V4045 is an internally impedance-matched GaAs power FET especially designed for use in 14.0 – 14.5 GHz band amplifiers. The hermetically sealed metal-ceramic
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MGFK35V4045
MGFK35V4045
35W amplifiers
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5.5w
Abstract: No abstract text available
Text: < X/Ku band internally matched power GaAs FET > MGFK37V4045 14.0 – 14.5 GHz BAND / 5.5W DESCRIPTION The MGFK37V4045 is an internally impedance-matched GaAs power FET especially designed for use in 14.0 – 14.5 GHz band amplifiers. The hermetically sealed metal-ceramic
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MGFK37V4045
MGFK37V4045
5.5w
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MGF2415
Abstract: No abstract text available
Text: < High-power GaAs FET small signal gain stage > MGF2415A S to Ku BAND / 0.55W non - matched DESCRIPTION The MGF2415A, power GaAs FET with an N-channel schottky gate, is designed for use in S to Ku band amplifiers. FEATURES • High output power Po=27.5dBm(TYP.) @f=14.5GHz
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MGF2415A
MGF2415A,
150mA
MGF2415
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Untitled
Abstract: No abstract text available
Text: < High-power GaAs FET small signal gain stage > MGF2445A S to Ku BAND / 1.6W non - matched DESCRIPTION The MGF2445A, power GaAs FET with an N-channel schottky gate, is designed for use in S to Ku band amplifiers. FEATURES • High output power Po=32.0dBm(TYP.) @f=12GHz
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MGF2445A
MGF2445A,
12GHz
450mA
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Untitled
Abstract: No abstract text available
Text: < High-power GaAs FET small signal gain stage > MGF2445A S to Ku BAND / 1.6W non - matched DESCRIPTION The MGF2445A, power GaAs FET with an N-channel schottky gate, is designed for use in S to Ku band amplifiers. FEATURES • High output power Po=32.0dBm(TYP.) @f=12GHz
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MGF2445A
MGF2445A,
12GHz
450mA
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Untitled
Abstract: No abstract text available
Text: < High-power GaAs FET small signal gain stage > MGF2407A S to Ku BAND / 0.28W non - matched DESCRIPTION The MGF2407A, power GaAs FET with an N-channel schottky gate, is designed for use in S to Ku band amplifiers. FEATURES • High output power Po=24.5dBm(TYP.) @f=14.5GHz
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MGF2407A
MGF2407A,
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MGF2430A
Abstract: No abstract text available
Text: < High-power GaAs FET small signal gain stage > MGF2430A S to Ku BAND / 1.1W non - matched DESCRIPTION The MGF2430A, power GaAs FET with an N-channel schottky gate, is designed for use in S to Ku band amplifiers. FEATURES • High output power Po=30.5dBm(TYP.) @f=14.5GHz
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MGF2430A
MGF2430A,
300mA
MGF2430A
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Untitled
Abstract: No abstract text available
Text: < High-power GaAs FET small signal gain stage > MGF2430A S to Ku BAND / 1.1W non - matched DESCRIPTION The MGF2430A, power GaAs FET with an N-channel schottky gate, is designed for use in S to Ku band amplifiers. FEATURES • High output power Po=30.5dBm(TYP.) @f=14.5GHz
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MGF2430A
MGF2430A,
300mA
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Untitled
Abstract: No abstract text available
Text: < High-power GaAs FET small signal gain stage > MGF2407A S to Ku BAND / 0.28W non - matched DESCRIPTION The MGF2407A, power GaAs FET with an N-channel schottky gate, is designed for use in S to Ku band amplifiers. FEATURES • High output power Po=24.5dBm(TYP.) @f=14.5GHz
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MGF2407A
MGF2407A,
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Untitled
Abstract: No abstract text available
Text: < X/Ku band internally matched power GaAs FET > MGFK38A3745 13.75 – 14.50 GHz BAND / 6W DESCRIPTION The MGFK38A3745 is an internally impedance-matched GaAs power FET especially designed for use in 13.75 – 14.50 GHz band amplifiers. The hermetically sealed metal-ceramic
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MGFK38A3745
MGFK38A3745
50GHz
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Untitled
Abstract: No abstract text available
Text: Dual Band X & Ku SSPA X 125W to 180W Ku 125W to 160W SSPA-XK Features • Dual-band, linearity and efficiency High gain Microprocessor based monitor and control Monitoring of all key operating parameters Built-in forward and reflected power monitors
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RS232
RS422/485
PB-SSPA-XK-13150
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F1375
Abstract: 9137 006 208 MGFK38A3745
Text: < X/Ku band internally matched power GaAs FET > MGFK38A3745 13.75 – 14.50 GHz BAND / 6W DESCRIPTION The MGFK38A3745 is an internally impedance-matched GaAs power FET especially designed for use in 13.75 – 14.50 GHz band amplifiers. The hermetically sealed metal-ceramic
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MGFK38A3745
MGFK38A3745
50GHz
100ohm
F1375
9137 006 208
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Untitled
Abstract: No abstract text available
Text: < X/Ku band internally matched power GaAs FET > MGFK25V4045 14.0 – 14.5 GHz BAND / 0.3W DESCRIPTION The MGFK25V4045 is an internally impedance-matched GaAs power FET especially designed for use in 14.0 – 14.5 GHz band amplifiers. The hermetically sealed metal-ceramic
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MGFK25V4045
MGFK25V4045
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SFD1001
Abstract: wj sfd1001 ICS1001 "ku band" amplifier SME1400 E9001 SR1019 SME1400B-10 icl1001
Text: PRODUCT SELECTION GUIDE: By Specifications RF Products: <2.5 GHz AMPLIFIERS Frequency Small Gain Noise Power Output Range Signal Gain Flatness Figure at 1 dB Compression Intercept VSW R MHz (dB) (±dB) (dB) (dBm) Point (dBm) (i/O) Volts mA Type AH1 450-3000
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OCR Scan
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A3010-1
SA1032
OT-89
J1-10
J1-13
J2-10
J2-13
J3-10
J3-13
E900-17
SFD1001
wj sfd1001
ICS1001
"ku band" amplifier
SME1400
E9001
SR1019
SME1400B-10
icl1001
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