Monopulse Set
Abstract: Receiver Protectors KUBand Duplexer Monopulse DSA0021917 microwave Duplexer
Text: Receiver Protectors Ku-Band Monopulse Set Features: • · · · · · Frequency: 15.5 to 17.5 GHz Insertion Loss: 1.5 dB max VSWR: 1.45:1 max Phase Matching: ± 15 degrees max Amplitude Matching: ± 0.3 dB max Dual Unit Power Handling in duplexer : - Active: 2.6 kW peak; 10 mS pulse @ 4% Duty
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sky77528
Abstract: SKY77344 SKY77531 sky77534 srf 3417 SKY77526 SKY73009-11 SKY77518 sky77524 SKY77519
Text: Product Selection Guide Fall 2009 Skyworks Solutions Skyworks Solutions, Inc. is an innovator of high reliability analog and mixed signal semiconductors. Leveraging core technologies, Skyworks offers diverse standard and custom linear products supporting automotive, broadband, cellular infrastructure, energy management,
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BRO254-09B
sky77528
SKY77344
SKY77531
sky77534
srf 3417
SKY77526
SKY73009-11
SKY77518
sky77524
SKY77519
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sky77528
Abstract: sky77534 SKY77526 SKY77705 SKY77548 SKY77542 SKY65404-21 SKY77544 SKY77701 AX508
Text: Product Selection Guide Fall 2010 Skyworks Solutions Skyworks Solutions, Inc. is an innovator of high reliability analog and mixed signal semiconductors. Leveraging core technologies, Skyworks offers diverse standard and custom linear products supporting automotive, broadband, cellular infrastructure, energy management,
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BRO254-10A
sky77528
sky77534
SKY77526
SKY77705
SKY77548
SKY77542
SKY65404-21
SKY77544
SKY77701
AX508
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GC4430
Abstract: High Speed Switches GC4432-30 Types of Radar Antenna GC4400 GC4413 GC4410 GC4411 GC4412 GC4431
Text: Semiconductor Control Devices HIGH VOLTAGE PIN DIODES APPLICATIONS DESCRIPTION The GC4400 series are high voltage, high power cathode base PIN diodes. These high resistivity silicon devices are passivated with silicon dioxide for high stability and reliability and have been proven by
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GC4400
MIL-S-19500.
GC4500,
GC4200,
GC4300
GC4430
High Speed Switches
GC4432-30
Types of Radar Antenna
GC4413
GC4410
GC4411
GC4412
GC4431
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High Speed Switches
Abstract: GC4412 digital phase shifters GC4400 GC4410 GC4411 GC4413 GC4430 GC4431 RS100
Text: TOC Control Devices HIGH VOLTAGE PIN DIODES DESCRIPTION APPLICATIONS The GC4400 series are high voltage, high power cathode base PIN diodes. These high resistivity silicon devices are passivated with silicon dioxide for high stability and reliability and have been proven by thousands of device hours in high reliability systems.
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GC4400
MIL-S-19500.
GC4500,
GC4200,
GC4300
High Speed Switches
GC4412
digital phase shifters
GC4410
GC4411
GC4413
GC4430
GC4431
RS100
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GC4412
Abstract: No abstract text available
Text: Control Devices HIGH VOLTAGE PIN DIODES APPLICATIONS DESCRIPTION The GC4400 series are high voltage, high power cathode base PIN diodes. These high resistivity silicon devices are passivated with silicon dioxide for high stability and reliability and have been proven by
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GC4400
MIL-S-19500.
GC4500,
GC4200,
GC4300
GC4412
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GC4200
Abstract: Types of Radar Antenna GC4210 GC4270 GC4271 GC4272 GC4273 GC4274 GC4275 RS20
Text: Control Devices HIGH SPEED PIN DIODES APPLICATIONS DESCRIPTION The GC4200 series are high speed cathode base PIN diodes made with high resistivity epitaxial silicon material. These diodes are passivated with silicon dioxide for high stability and reliability and have been proven by
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GC4200
MIL-S-19500.
GC4300,
GC4400,
GC4500
Types of Radar Antenna
GC4210
GC4270
GC4271
GC4272
GC4273
GC4274
GC4275
RS20
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GC4200
Abstract: GC4275 GC4270 GC4271 GC4272 GC4273 GC4274 RS20
Text: TOC Control Devices HIGH SPEED PIN DIODES DESCRIPTION APPLICATIONS The GC4200 series are high speed cathode base PIN diodes made with high resistivity epitaxial silicon material. These diodes are passivated with silicon dioxide for high stability and reliability and have been proven by thousands of device hours in high reliability systems.
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GC4200
GC4300,
GC4400,
GC4500
GC4270
GC4271
GC4272
GC4273
GC4274
GC4275
GC4270
GC4271
GC4272
GC4273
GC4274
RS20
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Untitled
Abstract: No abstract text available
Text: GC4410 – GC4495 TM CONTROL DEVICES – HIGH VOLTAGE PIN DIODES RoHS Compliant DESCRIPTION KEY FEATURES The GC4400 series are high voltage, high power cathode base PIN diodes. These high resistivity silicon devices are glass passivated for high stability and reliability
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GC4410
GC4495
GC4400
18Ghz
GC44xx
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GC4430
Abstract: digital phase shifters GC4410 GC4412 GC4432-30 gc4495 GC4400 GC4411 GC4413 GC4200
Text: GC4410 – GC4495 TM CONTROL DEVICES – HIGH VOLTAGE PIN DIODES RoHS Compliant DESCRIPTION KEY FEATURES The GC4400 series are high voltage, high power cathode base PIN diodes. These high resistivity silicon devices are glass passivated for high stability and reliability
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GC4410
GC4495
GC4400
18Ghz
GC44xx
GC4430
digital phase shifters
GC4410
GC4412
GC4432-30
gc4495
GC4411
GC4413
GC4200
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GC4510
Abstract: ku band HIGH POWER ANTENNA SWITCH PIN DIODE GC4500 GC4511-00 GC4511 GC4512 GC4513 GC4530 GC4533 digital phase shifters
Text: GC4510 – GC4533 CONTROL DEVICES High Voltage NIP Diodes TM RoHS Compliant KEY FEATURES The GC4500 series are high voltage, high power anode base NIP diodes. These high resistivity silicon devices are passivated with silicon dioxide for high stability and reliability and have been proven by thousands of device
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GC4510
GC4533
GC4500
MIL-PRF-19500.
18Ghz
GC45xx
GC4510
ku band HIGH POWER ANTENNA SWITCH PIN DIODE
GC4511-00
GC4511
GC4512
GC4513
GC4530
GC4533
digital phase shifters
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GC4310
Abstract: GC4311 GC4371 GC4372 GC4373 GC4374 GC4375 GC4200
Text: GC4310 – GC4375 CONTROL DEVICES High Speed NIP Diodes TM RoHS Compliant KEY FEATURES The GC4300 series are high speed anode base NIP diodes made with high resistivity reverse epitaxial silicon material. These diodes are passivated with silicon dioxide for high stability and reliability and have been proven by
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GC4310
GC4375
GC4300
18Ghz
GC4310
GC4311
GC4371
GC4372
GC4373
GC4374
GC4375
GC4200
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GC4210
Abstract: GC4200 GC4270 GC4271 GC4272 GC4273 GC4275
Text: GC4210 – GC4275 TM CONTROL DEVICES – HIGH SPEED PIN DIODES RoHS Compliant KEY FEATURES The GC4200 series are high speed cathode base PIN diodes made with high resistivity epitaxial silicon material. These diodes are passivated with silicon dioxide for high stability and reliability
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GC4210
GC4275
GC4200
MIL-PRF-19500.
GC4210
GC4270
GC4271
GC4272
GC4273
GC4275
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Untitled
Abstract: No abstract text available
Text: GC4510 – GC4533 CONTROL DEVICES High Voltage NIP Diodes TM RoHS Compliant K EY FEAT U RES The GC4500 series are high voltage, high power anode base NIP diodes. These high resistivity silicon devices are passivated with silicon dioxide for high stability and reliability and have been proven by thousands of device
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GC4510
GC4533
GC4500
MIL-PRF-19500.
18Ghz
GC45xx
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Untitled
Abstract: No abstract text available
Text: GC4210 – GC4275 TM CONTROL DEVICES – HIGH SPEED PIN DIODES RoHS Compliant K EY FEAT U RES The GC4200 series are high speed cathode base PIN diodes made with high resistivity epitaxial silicon material. These diodes are passivated with silicon dioxide for high stability and reliability
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GC4210
GC4275
GC4200
18Ghz
MIL-PRF-195
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UPC8236
Abstract: MRFE6VP m74 7 segment display Mounting and Soldering of RF transistors MOBILE jammer GSM 1800 MHZ circuit diagram BLF4G08LS-160A rf Amplifier mhz Doherty 470-860 RF transceiver 802.11AC AN10882 m74 7 segment display input
Text: RF Manual 16 edition th Application and design manual for High Performance RF products June 2012 NXP enables you to unleash the performance of next-generation RF and microwave designs NXP's RF Manual is one of the most important reference tools on the market for today’s
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m1305 transistor
Abstract: w431 MRF1421C Diode LT 4104 NJT1946A 7082a NJT1949 magnetron 2j42 MSF1422B magnetron 5kw
Text: INTEGRATED CIRCUITS BIPOLAR OPERATIONAL AMPLIFIER TY PE s I N G ¥ D U A L Q u A D H E X D E S C R IP T IO N NJMOP-07 NJM318 NJM741 NJM2107F NJM2130 NJM425# NJM5534 NJM 022 N JM 022B NJM 062 N JM 072B N JM 082B NJM353 NJM1458 NJM2041 NJM2043 NJM2068 NJM2082
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NJMOP-07
NJM318
NJM741
NJM2107F
NJM2130
NJM425#
NJM5534
NJM353
NJM1458
NJM2041
m1305 transistor
w431
MRF1421C
Diode LT 4104
NJT1946A
7082a
NJT1949
magnetron 2j42
MSF1422B
magnetron 5kw
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NE14201
Abstract: NE14202 NE14203 NE14204 NE14205 NE14206 NE14207 NE14208 NE14209
Text: 6563403 NEW ENGLAND MICROWAVE _ ' ' '66C 00085 bb DE | b S t i 3 4 0 3 OOOODflS fl | ~ N€W <ENGLmD MICROWme CORPORATION 2 6 H A M P S H IR E D R IV E , H U D S O N , N E W H A M P S H IR E 0 3 0 5 1 6 0 3 8 8 3 - 2 9 0 0 HIGH VOLTAGE P IN /N IP DIODES
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b5b3403
NE14200/14200R
NE14200-14200R
Mil-S-19500.
frequenc02
NE14203
NE14204
NE14205
NE14206
NE14207
NE14201
NE14202
NE14208
NE14209
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GC4490
Abstract: No abstract text available
Text: Control Devices HIGH VOLTAGE PIN DIODES DESCRIPTION APPLICATIONS The GC4400 series are high voltage, high power cath ode base PIN diodes. These high resistivity silicon devices are passivated with silicon dioxide for high stability and reliability and have been proven by thou
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GC4400
GC4500,
GC4200,
GC4300
GC4490
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HP PIN DIODES
Abstract: No abstract text available
Text: lhp% H EW LETT mLUM P A C K A R D PIN Diodes for Fast Switching and Attenuating Technical Data 5082-3305 5082-3306 Features • Nanosecond Sw itching Time Typically Less than 5 ns • Low R esidual Series R esistance Less than 1 Q • Low Drive Current Required
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Untitled
Abstract: No abstract text available
Text: • 4 4 4 7 5 A 4 □□□'17313 S I T HEW LETT-PACKARD/ ■H P A C MP NT S W fw% H E W L E T T b lE D PACKARD PIN D iodes for F ast S w itch in g and A tten u atin g Technical Data 5082-3305 5082-3306 Features 1 32 0 5 2 f2 3 fi5 3 § l • Nanosecond Sw itching
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DDDT73Ã
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Untitled
Abstract: No abstract text available
Text: HEWLETT-PACKARDn CHPNTS 2QE 4447SÔ4 a D 0005770 HIGH RELIABILITY PIN DIODES HEWLETT PACKARD Generic 5082-3042 and -3043 S B TX-3042 TXB-3042 TXV-3042 TXVB-3042 TX-3Û43 TXB-3043 TXV-3043 TXUB-3043 T - O Ï 'J S ' Features QUALITY PERFORMANCE TESTED Test Program Patterned after MIL-S-19500
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4447S
TX-3042
TXB-3042
TXV-3042
TXVB-3042
TXB-3043
TXV-3043
TXUB-3043
MIL-S-19500
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digital phase shifters
Abstract: NE14001 NE14002 NE14003 NE14004 NE14005 NE14006 NE14007 NE14008 ksb34
Text: 6563403 NEW % 'EN,GL AND M i CRD WAVE ~~bb 66C 00083 D E | tSt.3403 0000DA3 o 7 - / 3 ' o 4 N€W €NGLM1D MICROWNJ€ CORPORATION 26 HAMPSHIRE DRIVE, HUDSON, NEW HAMPSHIRE 03051 603 883-2900 HIGH SPEED P.I.N. DIODES NE 14000 T h e N E 1 4 0 0 0 a re stab le and reliab le fast sw itching PIN diodes m ade from high resisitivity epitaxial
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bsb34d3
NE14000
MIL-S-19500.
PN-011.
digital phase shifters
NE14001
NE14002
NE14003
NE14004
NE14005
NE14006
NE14007
NE14008
ksb34
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hp 3101
Abstract: hp 3101 pin hp 3201 HP PIN DIODES 5082-3041 HP5082-3305 hp 3303 5082 J 3305 5082-3041 equivalent
Text: H E W L E T T ^ PACKARD COMPONENTS PIN DIODES FOR FAST SWITCHING RF POWER SWITCHING AND ATTENUATION 5082 3101/02 5082 3201/02 5082 3301/02 5082 3303/04 5082 3305/06 - - - - - RF POWER SWITCHING/ATTENUATING Features HIGH ISOLATION Greater Than 25 dB LOW INSERTION LOSS
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