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    KU 506 TRANSISTOR Search Results

    KU 506 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    CA3082 Rochester Electronics LLC Small Signal Bipolar Transistor Visit Rochester Electronics LLC Buy
    CA3081F Rochester Electronics LLC Small Signal Bipolar Transistor Visit Rochester Electronics LLC Buy
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation

    KU 506 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    transistors BC 639 029

    Abstract: BC368N mpsa 46 MPSA 506 transistor 42BA-3 SBC337
    Text: Selection Guide Diodes leaded For complete information and data sheets please refer to our Data Book I and II, Small Signal Semiconductor Edition 03.92. RF-Schottky Diodes for Professional Applications Type Frequency Band GHz Maximum Ratings Characteristics (TA = 25 °C)


    Original     		PDF O-92d transistors BC 639 029 BC368N mpsa 46 MPSA 506 transistor 42BA-3 SBC337

    Controlled Alternator Voltage Regulator

    Abstract: No abstract text available
    Text: CS3341, CS3351, CS387 Alternator Voltage Regulator Darlington Driver The CS3341/3351/387 integral alternator regulator integrated circuit provides the voltage regulation for automotive, 3–phase alternators. It drives an external power Darlington for control of the alternator


    Original     		PDF CS3341, CS3351, CS387 CS3341/3351/387 CS3341 CS3351 CS33x1 r14525 CS3341/D Controlled Alternator Voltage Regulator

    Untitled

    Abstract: No abstract text available
    Text: Back CS3341, CS3351, CS387 Alternator Voltage Regulator Darlington Driver The CS3341/3351/387 integral alternator regulator integrated circuit provides the voltage regulation for automotive, 3–phase alternators. It drives an external power Darlington for control of the alternator


    Original     		PDF CS3341, CS3351, CS387 CS3341/3351/387 CS3341 CS3351 CS33x1 r14525 CS3341/D

    d768 transistor

    Abstract: 3-pin D128 transistor transistor D128 transistor D586 D1515 ne32584c application note transistor d436 d388 transistor D832 transistor transistor D442
    Text: DATA DATA SHEET SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE32584C C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION The NE32584C is a Hetero Junction FET that utilizes the PACKAGE DIMENSIONS Unit: mm hetero junction to create high mobility electrons. Its excellent


    Original     		PDF NE32584C NE32584C d768 transistor 3-pin D128 transistor transistor D128 transistor D586 D1515 ne32584c application note transistor d436 d388 transistor D832 transistor transistor D442

    TRANSISTOR SMD MARKING CODE 1 KW

    Abstract: smd TRANSISTOR code marking wL TRANSISTOR SMD MARKING CODE MF fet alternator regulator circuit CS387 CS3341 CS3341YD14 CS3341YD14G CS3341YDR14 CS3351
    Text: CS3341, CS3351, CS387 Alternator Voltage Regulator Darlington Driver The CS3341/3351/387 integral alternator regulator integrated circuit provides the voltage regulation for automotive, 3−phase alternators. It drives an external power Darlington for control of the alternator


    Original     		PDF CS3341, CS3351, CS387 CS3341/3351/387 CS3341 CS3351 SOIC-14 CS387 CS3361. TRANSISTOR SMD MARKING CODE 1 KW smd TRANSISTOR code marking wL TRANSISTOR SMD MARKING CODE MF fet alternator regulator circuit CS3341YD14 CS3341YD14G CS3341YDR14

    TRANSISTOR SMD MARKING CODE 1 KW

    Abstract: No abstract text available
    Text: CS3341, CS3351, CS387 Alternator Voltage Regulator Darlington Driver The CS3341/3351/387 integral alternator regulator integrated circuit provides the voltage regulation for automotive, 3−phase alternators. It drives an external power Darlington for control of the alternator


    Original     		PDF CS3341, CS3351, CS387 CS3341/3351/387 CS3341 CS3351 CS387 CS3361. TRANSISTOR SMD MARKING CODE 1 KW

    CS3341

    Abstract: CS3341YD14 CS3341YDR14 CS3351 CS3351YD14 CS3351YDR14 CS387 CS387H alternator circuit diagram UM605
    Text: CS3341, CS3351, CS387 Alternator Voltage Regulator Darlington Driver The CS3341/3351/387 integral alternator regulator integrated circuit provides the voltage regulation for automotive, 3–phase alternators. It drives an external power Darlington for control of the alternator


    Original     		PDF CS3341, CS3351, CS387 CS3341/3351/387 CS3341 CS3351 CS387 r14525 CS3341/D CS3341YD14 CS3341YDR14 CS3351YD14 CS3351YDR14 CS387H alternator circuit diagram UM605

    Alternator regulator

    Abstract: alternator ic connection fet alternator regulator circuit alternator voltage regulator CS387 ignition coil npn power darlington CS3341 CS3341YD14 CS3341YDR14 CS3351
    Text: CS3341, CS3351, CS387 Alternator Voltage Regulator Darlington Driver The CS3341/3351/387 integral alternator regulator integrated circuit provides the voltage regulation for automotive, 3–phase alternators. It drives an external power Darlington for control of the alternator


    Original     		PDF CS3341, CS3351, CS387 CS3341/3351/387 CS3341 CS3351 CS387 CS3361. Alternator regulator alternator ic connection fet alternator regulator circuit alternator voltage regulator ignition coil npn power darlington CS3341YD14 CS3341YDR14

    2225x7r225kt3ab

    Abstract: MRF6VP41KH A114 A115 C101 JESD22 MRF6VP41KHR6 MRF6VP41KHSR6 ATC100B9R1CT500XT
    Text: Freescale Semiconductor ‘Technical Data Document Number: MRF6VP41KH Rev. 0, 1/2008 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed primarily for pulsed wideband applications with frequencies up to 450 MHz. Devices are unmatched and are suitable for use in industrial,


    Original     		PDF MRF6VP41KH MRF6VP41KHR6 MRF6VP41KHSR6 2225x7r225kt3ab MRF6VP41KH A114 A115 C101 JESD22 MRF6VP41KHSR6 ATC100B9R1CT500XT

    MRF6VP11KH

    Abstract: J647 MRF6VP11KHR6 mosfet mttf D6971 ptf561 A114 A115 AN1955 C101
    Text: Freescale Semiconductor Technical Data Document Number: MRF6VP11KH Rev. 0, 1/2008 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF6VP11KHR6 Designed primarily for pulsed wideband applications with frequencies up to 150 MHz. Device is unmatched and is suitable for use in industrial, medical


    Original     		PDF MRF6VP11KH MRF6VP11KHR6 MRF6VP11KH J647 MRF6VP11KHR6 mosfet mttf D6971 ptf561 A114 A115 AN1955 C101

    NE42484C

    Abstract: 2608 surface mount transistor NE42484C-T1 Ga FET marking k C band FET transistor s-parameters L to Ku BAND LOW NOISE AMPLIFIER NEC Ga FET marking C 1S1220 THE TRANSISTOR MANUAL (JAPANESE) 1993 nec gaas fet marking
    Text: DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE42484C C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION PACKAGE DIMENSIONS Unit : mm The NE42484C is a Hetero Junction FET that utilizes the hetero junction to create high mobility electrons. Its excellent


    Original     		PDF NE42484C NE42484C NE42484C-SL 2608 surface mount transistor NE42484C-T1 Ga FET marking k C band FET transistor s-parameters L to Ku BAND LOW NOISE AMPLIFIER NEC Ga FET marking C 1S1220 THE TRANSISTOR MANUAL (JAPANESE) 1993 nec gaas fet marking

    Tantalum Capacitor kemet

    Abstract: 1000 watts power amp circuit diagram 1000 watts ups circuit diagram Amp. mosfet 1000 watt AN1955 CPF320R000FKE14 tuo-4 Illinois Capacitor MRF6VP21KHR6 rf push pull mosfet power amplifier
    Text: Freescale Semiconductor Technical Data Document Number: MRF6VP21KH Rev. 3, 12/2008 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF6VP21KHR6 Designed primarily for pulsed wideband applications with frequencies up to 235 MHz. Device is unmatched and is suitable for use in industrial, medical


    Original     		PDF MRF6VP21KH MRF6VP21KHR6 Tantalum Capacitor kemet 1000 watts power amp circuit diagram 1000 watts ups circuit diagram Amp. mosfet 1000 watt AN1955 CPF320R000FKE14 tuo-4 Illinois Capacitor MRF6VP21KHR6 rf push pull mosfet power amplifier

    mrf6vp11kh

    Abstract: AN1955 A114 A115 C101 JESD22 MRF6VP11KHR6
    Text: Freescale Semiconductor Technical Data Document Number: MRF6VP11KH Rev. 4, 12/2008 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF6VP11KHR6 Designed primarily for pulsed wideband applications with frequencies up to 150 MHz. Device is unmatched and is suitable for use in industrial, medical


    Original     		PDF MRF6VP11KH MRF6VP11KHR6 mrf6vp11kh AN1955 A114 A115 C101 JESD22 MRF6VP11KHR6

    C15B1

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF6VP11KH Rev. 3, 9/2008 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF6VP11KHR6 Designed primarily for pulsed wideband applications with frequencies up to 150 MHz. Device is unmatched and is suitable for use in industrial, medical


    Original     		PDF MRF6VP11KH MRF6VP11KHR6 C15B1

    MRF6VP11KH

    Abstract: ATC100B180JT500X ATC100B101JT500XT MRF6VP11KHR6 A114 A115 AN1955 C101 JESD22 CPF320R000FKE14
    Text: Freescale Semiconductor Technical Data Document Number: MRF6VP11KH Rev. 1, 4/2008 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF6VP11KHR6 Designed primarily for pulsed wideband applications with frequencies up to 150 MHz. Device is unmatched and is suitable for use in industrial, medical


    Original     		PDF MRF6VP11KH MRF6VP11KHR6 MRF6VP11KH ATC100B180JT500X ATC100B101JT500XT MRF6VP11KHR6 A114 A115 AN1955 C101 JESD22 CPF320R000FKE14

    81c1000

    Abstract: ATC100B241JT200XT
    Text: Freescale Semiconductor Technical Data Document Number: MRF6VP41KH Rev. 3, 11/2008 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed primarily for pulsed wideband applications with frequencies up to 450 MHz. Devices are unmatched and are suitable for use in industrial,


    Original     		PDF MRF6VP41KH MRF6VP41KHR6 MRF6VP41KHSR6 81c1000 ATC100B241JT200XT

    A03TK

    Abstract: TRANSISTOR J406 A114 A115 AN1955 C101 JESD22 MRF6VP21KHR6 A03TKLC C2227
    Text: Freescale Semiconductor Technical Data Document Number: MRF6VP21KH Rev. 1, 4/2008 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF6VP21KHR6 Designed primarily for pulsed wideband applications with frequencies up to 235 MHz. Device is unmatched and is suitable for use in industrial, medical


    Original     		PDF MRF6VP21KH MRF6VP21KHR6 A03TK TRANSISTOR J406 A114 A115 AN1955 C101 JESD22 MRF6VP21KHR6 A03TKLC C2227

    atc100b270

    Abstract: No abstract text available
    Text: Freescale Semiconductor ‘Technical Data Document Number: MRF6VP41KH Rev. 1, 4/2008 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed primarily for pulsed wideband applications with frequencies up to 450 MHz. Devices are unmatched and are suitable for use in industrial,


    Original     		PDF MRF6VP41KH MRF6VP41KHR6 MRF6VP41KHSR6 atc100b270

    2SB75

    Abstract: 2sb405 2sb77 d 2SB505 2SB506 2SB77 2SB75 B 2SB77 C 2SB75 C
    Text: 5 - - FOR USE BY ELECTRICIANS OVERSEAS : •M-EiiOSW HE New T ransistor Manual lists all the transistors registered with the Electronic Industries Association of Japan (EIAJ), arranged in a manner easy to look up. We hope that you will m ake full use of the data provided in this manual by referring to the Japanese-English


    OCR Scan     		PDF 7C-25-C) 2SB75 2sb405 2sb77 d 2SB505 2SB506 2SB77 2SB75 B 2SB77 C 2SB75 C

    NE42484A

    Abstract: transistor NEC D 986 NE42484A-SL ne42484 IC ATA 2388 L to Ku BAND LOW NOISE AMPLIFIER NEC Ga FET marking L nec gaas fet marking NEC Ga FET marking A KU 506 transistor
    Text: DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE42484A C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET PACKAGE DIMENSIONS Unit : mm DESCRIPTION The N E42484A is a Hetero Junction FET that utilizes the hetero junction to create high mobility electrons. Its excellent


    OCR Scan     		PDF NE42484A NE42484A NE42484A-SL NE42484A-T1 transistor NEC D 986 ne42484 IC ATA 2388 L to Ku BAND LOW NOISE AMPLIFIER NEC Ga FET marking L nec gaas fet marking NEC Ga FET marking A KU 506 transistor

    NEC k 2134 transistor

    Abstract: k 2134 nec nec gaas fet marking NEC D 809 k NEC 2134 transistor NE32584
    Text: DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE32584C C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION The NE32584C is a Hetero Junction FET that utilizes the hetero junction to create high mobility electrons. PACKAGE DIMENSIONS Unit: mm


    OCR Scan     		PDF NE32584C NE32584C NE32584C-T1A NE32584C-SL NE32584C-T1 NEC k 2134 transistor k 2134 nec nec gaas fet marking NEC D 809 k NEC 2134 transistor NE32584

    2SD1491

    Abstract: S0426 14s6 RL-50 m1.0425 l0897 u236
    Text: NEC Silicon Power Transistor r - 2SD1491Ü 3 ^ ; •X ; y 4 * - K, ’T — K r f êï f é v u / >f ^ # T H i “ - ' . } ; « *HB0 JÊfi! 1mm h > F m) uv h 7 ^ r 8.5 M A X . m i t M t « 2.8 M A X . ~4> 3 2 ± o i t ' t c CM % ft o +1 I T K i t i 7 ) T 'i a ,


    OCR Scan     		PDF 2SD1491 PTlTa-25 2SD1491 S0426 14s6 RL-50 m1.0425 l0897 u236

    NE32584C-T1

    Abstract: nec 3435 transistor am 4428
    Text: DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE32584C C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION PACKAGE DIMENSIONS Unit: mm T h e N E 3 25 84C is a H etero Jun ction F ET th a t utilizes the hetero ju n ctio n to crea te high m obility e lectron s.


    OCR Scan     		PDF NE32584C NE32584C-T1A NE32584C-T1 nec 3435 transistor am 4428

    HCC4503B

    Abstract: KU 506 transistor
    Text: r r z SGS-THOMSON AT/ HCC4503B HCF4503B HEX BUFFER • ■ ■ ■ ■ 1 TTL-LOAD OUTPUT DRIVE CAPABILITY 2 OUTPUT-DISABLE CONTROLS 3 STATE OUTPUTS 5V, 10V, AND 15V PARAMETRIC RATINGS QUIESCENT CURRENT SPECIFIED TO 20V FOR HCC DEVICE ■ INPUT CURRENT OF 100nA AT 18V AND


    OCR Scan     		PDF HCC4503B HCF4503B 100nA HCC4503B HCC/HCF4503B J99A/2 KU 506 transistor