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    KTN2222 Price and Stock

    KEC KTN2222AS

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Bristol Electronics KTN2222AS 2,282
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    KEC KTN2222AS-RTK

    Bipolar Junction Transistor, NPN Type, SOT-23
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components KTN2222AS-RTK 1,825
    • 1 $1.5
    • 10 $1.5
    • 100 $1.5
    • 1000 $0.6
    • 10000 $0.525
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    KTN2222AS-RTK 1,825
    • 1 $1.5
    • 10 $1.5
    • 100 $1.5
    • 1000 $0.6
    • 10000 $0.525
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    Others KTN2222AS-RTK

    Bipolar Junction Transistor, NPN Type, SOT-23 (Also Known As: KTN2222AS)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components KTN2222AS-RTK 1,374
    • 1 $0.12
    • 10 $0.12
    • 100 $0.12
    • 1000 $0.054
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    KTN2222AS-RTK 1,374
    • 1 $0.12
    • 10 $0.12
    • 100 $0.12
    • 1000 $0.054
    • 10000 $0.054
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    KEC KTN2222A

    Bipolar Junction Transistor, NPN Type, TO-92
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components KTN2222A 12
    • 1 $5.1387
    • 10 $3.7684
    • 100 $3.7684
    • 1000 $3.7684
    • 10000 $3.7684
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    KEC KTN2222AS-RTK/P

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Ameya Holding Limited KTN2222AS-RTK/P 36,000
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    Find more KTN2222 price and stock on Findchips.com

    KTN2222 Datasheets (27)

    Part ECAD Model Manufacturer Description Curated Type PDF
    KTN2222 Korea Electronics Switching Transistor Original PDF
    KTN2222 Korea Electronics EPITAXIAL PLANAR NPN TRANSISTOR Scan PDF
    KTN2222 Korea Electronics V(ceo): 30V I(c): 600mA P(c): 625mW NPN Silicon Transistor Scan PDF
    KTN2222 Korea Electronics Switching Transistor Scan PDF
    KTN2222 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    KTN2222 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    KTN2222A Korea Electronics Switching Transistor Original PDF
    KTN2222A Korea Electronics Switching Transistor Scan PDF
    KTN2222A Korea Electronics EPITAXIAL PLANAR NPN TRANSISTOR Scan PDF
    KTN2222A Korea Electronics V(ceo): 40V I(c): 600mA P(c): 625mW NPN Silicon Transistor Scan PDF
    KTN2222A Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    KTN2222A Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    KTN2222AS Korea Electronics Switching Transistor Original PDF
    KTN2222AS Korea Electronics Switching Transistor Scan PDF
    KTN2222AS Korea Electronics EPITAXIAL PLANAR NPN TRANSISTOR Scan PDF
    KTN2222AS Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    KTN2222AU Korea Electronics Switching Transistor Original PDF
    KTN2222AU Korea Electronics EPITAXIAL PLANAR NPN TRANSISTOR Scan PDF
    KTN2222AU Korea Electronics Switching Transistor Scan PDF
    KTN2222(A)U Unknown Silicon NPN Transistor Scan PDF

    KTN2222 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    KTN2222U

    Abstract: No abstract text available
    Text: SEMICONDUCTOR KTN2222U MARKING SPECIFICATION USM PACKAGE 1. Marking method Laser Marking 2. Marking No. 0 1 ZB 1 2 Item Marking Description Device Mark ZB KTN2222U hFE Grade - - * Lot No. 01 2006. 1st Week [0:1st Character, 1:2nd Character] Note * Lot No. marking method


    Original     		PDF KTN2222U KTN2222U

    KTN2222U

    Abstract: No abstract text available
    Text: SEMICONDUCTOR KTN2222U/AU TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. E FEATURES B M M Low Leakage Current : ICEX=10nA Max. ; VCE=60V, VEB(OFF)=3V. D 3 1 G Low Saturation Voltage J A 2 : VCE(sat)=0.3V(Max.) ; IC=150mA, IB=15mA.


    Original     		PDF KTN2222U/AU 150mA, KTN2907U/2907AU. KTN2222U KTN2222AU

    Untitled

    Abstract: No abstract text available
    Text: SEMICONDUCTOR KTN2222U/AU TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES 2008. 8. 29 Revision No : 3 1/5


    Original     		PDF KTN2222U/AU

    KTN2222

    Abstract: 2222A npn KTN2222A
    Text: SEMICONDUCTOR KTN2222/A TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. B C FEATURES A ・Low Leakage Current : ICEX=10nA Max. ; VCE=60V, VEB(OFF)=3V. N ・Low Saturation Voltage K : VCE(sat)=0.3V(Max.) ; IC=150mA, IB=15mA.


    Original     		PDF KTN2222/A 150mA, KTN2907/2907A. KTN2222/2222A 2N2222/2222A. KTN2222 2222A npn KTN2222A

    LM8550

    Abstract: KTD2026 2SC2320 equivalent NEC 12F DATASHEET 2N3904 MOTOROLA 2sc2240 equivalent 2N3906 MOTOROLA 2sc1983 2N5400 MOTOROLA 2SD1960
    Text: Type No. Maker KEC Type No. Maker KEC Type No. Maker KEC Type No. Maker KEC 2N2222/A Motorola KTN2222/A 2SA1150 Toshiba KTA1272 2SA1510 Sanyo KRA1 10S 2SB546A NEC KTB 1369 2N2369/A Motorola KTN2369/A 2SA1151 NEC KTA1266 2SA1511 Sanyo KRA1 10M 2SB560 Sanyo


    Original     		PDF 2N2222/A KTN2222/A 2SA1150 KTA1272 2SA1510 2SB546A 2N2369/A KTN2369/A 2SA1151 KTA1266 LM8550 KTD2026 2SC2320 equivalent NEC 12F DATASHEET 2N3904 MOTOROLA 2sc2240 equivalent 2N3906 MOTOROLA 2sc1983 2N5400 MOTOROLA 2SD1960

    2222A

    Abstract: transistor 2222a data sheet transistor 2222a KTN2222A 2222A transistor
    Text: SEMICONDUCTOR KTN2222A MARKING SPECIFICATION TO-92 PACKAGE 1. Marking method Laser Marking 2. Marking KTN 1 2222A 016 3 No. Item Device Name Lot No. 2003. 3. 3 Revision No : 1 2 Marking Description KTN Series Name 2222A Device Name 016 Year 0~9 : 2000~2009


    Original     		PDF KTN2222A 2222A transistor 2222a data sheet transistor 2222a KTN2222A 2222A transistor

    KTN2222AU

    Abstract: KTN2222U
    Text: SEMICONDUCTOR KTN2222U/AU TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. E FEATURES B M M ・Low Leakage Current D A 3 1 G ・Low Saturation Voltage J 2 : ICEX=10nA Max. ; VCE=60V, VEB(OFF)=3V. : VCE(sat)=0.3V(Max.) ; IC=150mA, IB=15mA.


    Original     		PDF KTN2222U/AU 150mA, KTN2907U/2907AU. KTN2222AU KTN2222U

    KTN2222

    Abstract: 2222 diode 2222 2222 a
    Text: SEMICONDUCTOR KTN2222 MARKING SPECIFICATION TO-92 PACKAGE 1. Marking method Laser Marking 2. Marking KTN 2222 816 No. Item 1 2 3 98.06.23 Marking Description KTN Series Name 2222 Device Name Device Name Lot No. Revision No : 8 Year 0 ~ 9 : 1900~1999 16 Week


    Original     		PDF KTN2222 KTN2222 2222 diode 2222 2222 a

    Untitled

    Abstract: No abstract text available
    Text: SEMICONDUCTOR KTN2222S/AS TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES 1999. 5. 4 Revision No : 2 1/5


    Original     		PDF KTN2222S/AS

    KTN2222AU

    Abstract: KTN2222U 1k31
    Text: SEMICONDUCTOR KTN2222U/AU TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. E FEATURES B M M ᴌLow Leakage Current : ICEX=10nA Max. ; VCE=60V, VEB(OFF)=3V. D 3 1 G ᴌLow Saturation Voltage J A 2 : VCE(sat)=0.3V(Max.) ; IC=150mA, IB=15mA.


    Original     		PDF KTN2222U/AU 150mA, KTN2907U/2907AU. KTN2222U KTN2222AU KTN2222AU 1k31

    transistor 2222a data sheet

    Abstract: transistor 2222a data sheet to-92 2222A to-92 npn 2n2222 to-92 2222a NPN transistor 2222a 2222A Transistor 2N2222 Datasheet transistor 2222a to-92 npn 2907A
    Text: SEMICONDUCTOR KTN2222/A TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. B C FEATURES A Low Leakage Current : ICEX=10nA Max. ; VCE=60V, VEB(OFF)=3V. Low Saturation Voltage N K : VCE(sat)=0.3V(Max.) ; IC=150mA, IB=15mA.


    Original     		PDF KTN2222/A 150mA, KTN2907/2907A. KTN2222/2222A 2N2222/2222A. KTN2222 KTN220 transistor 2222a data sheet transistor 2222a data sheet to-92 2222A to-92 npn 2n2222 to-92 2222a NPN transistor 2222a 2222A Transistor 2N2222 Datasheet transistor 2222a to-92 npn 2907A

    ZG SOT-23

    Abstract: ZG SOT23 KTN2222AS SOT-23 MARKING ZG SOT-23 KTN2222AS marking zg MARKING ZG sot 23 zG j1 zg marking sot 23 zG
    Text: SEMICONDUCTOR KTN2222AS MARKING SPECIFICATION SOT-23 PACKAGE 1. Marking method Laser Marking 2. Marking No. 1 ZG 2 1 Item Marking Description Device Mark ZG KTN2222AS hFE Grade - - * Lot No. 01 2002. 1st Week [0:1st Character, 1:2nd Character] Note * Lot No. marking method


    Original     		PDF KTN2222AS OT-23 ZG SOT-23 ZG SOT23 KTN2222AS SOT-23 MARKING ZG SOT-23 KTN2222AS marking zg MARKING ZG sot 23 zG j1 zg marking sot 23 zG

    Untitled

    Abstract: No abstract text available
    Text: SEMICONDUCTOR KTN2222S/AS TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES E B L L ・Low Leakage Current 2 A H : VCE sat =0.3V(Max.) ; IC=150mA, IB=15mA. 3 G ・Low Saturation Voltage D : ICEX=10nA(Max.) ; VCE=60V, VEB(OFF)=3V.


    Original     		PDF KTN2222S/AS 150mA, KTN2907S/2907AS. 10x8x0

    marking zg

    Abstract: No abstract text available
    Text: SEMICONDUCTOR KTN2222AE TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. E FEATURES B ・Low Leakage Current : ICEX=10nA Max. ; VCE=60V, VEB(OFF)=3V. D H ・Low Saturation Voltage G A 2 1 3 : VCE(sat)=0.3V(Max.) ; IC=150mA, IB=15mA.


    Original     		PDF KTN2222AE 150mA, KTN2907AE. marking zg

    KTN2222ae

    Abstract: MARKING ZG KTN2907AE
    Text: SEMICONDUCTOR KTN2222AE TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. E FEATURES B Low Leakage Current : ICEX=10nA Max. ; VCE=60V, VEB(OFF)=3V. D H Low Saturation Voltage G A 2 1 3 : VCE(sat)=0.3V(Max.) ; IC=150mA, IB=15mA.


    Original     		PDF KTN2222AE 150mA, KTN2907AE. KTN2222ae MARKING ZG KTN2907AE

    ktn2222u

    Abstract: KTN2222AU
    Text: SEMICONDUCTOR KTN2222U/AU TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES ・Low Leakage Current : ICEX=10nA Max. ; VCE=60V, VEB(OFF)=3V. ・Low Saturation Voltage : VCE(sat)=0.3V(Max.) ; IC=150mA, IB=15mA.


    Original     		PDF 150mA, KTN2907U/2907AU. KTN2222U/AU KTN2222U KTN2222AU 150mA

    KTN2222S

    Abstract: No abstract text available
    Text: SEMICONDUCTOR KTN2222S MARKING SPECIFICATION SOT-23 PACKAGE 1. Marking method Laser Marking 2. Marking ZB No. 1 Item Marking Device Mark ZB KTN2222S hFE Grade - - * Lot No. 01 2 Description 1998. 1st Week [ 0: 1st Character, 1: 2nd Character] [Note] * Lot No. marking method


    Original     		PDF KTN2222S OT-23 KTN2222S

    KTN2222AS

    Abstract: KTN2222S KTN2222AS SOT-23
    Text: SEMICONDUCTOR TECHNICAL DATA KTN2222S/AS EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES • Low Leakage Current : IcEx-10nA M ax. ; V ce-60V , V eb(off)-3V. • Low Saturation Voltage : VcE(sat)=0.3V(Max.) ; Ic=150mA, lB=15mA.


    OCR Scan     		PDF KTN2222S/AS 15QmA, KTN2907S/2907AS. KTN2222S KTN2222AS 10x8x0 KTN2222AS KTN2222AS SOT-23

    KTN2222AU

    Abstract: KTN2222U FC100H
    Text: KEC SEMICONDUCTOR TECHNICAL DATA KOREA ELECTRONICS CO.,LTD. KTN2222U/AU EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES • Low Leakage Current : I c E x - 1 0 n A M a x . ; V c e = 6 0 V , V e b (o ff ) - 3 V .


    OCR Scan     		PDF KTN2222U/AU 150mA, KTN2907U/2907AU. KTN2222U KTN2222AU KTN2222AU FC100H

    KTN222S

    Abstract: KTN2222AS KTN2222S marking cox
    Text: ¿s\ I n ter n a tio n a l W S em ico n d u cto r, In c . KTN2222S/AS E P IT A X IA L P L A N A R NPN T R A N S IS T O R GENERAL PURPOSE APPLICATAIONS SWITCHING APPLICATIONS SOT-23 FEATURES • Low Leakage C urrent: lCEX = 10 mA Max, V CE = 60 Volts, V EB 0FF =3 V o lts


    OCR Scan     		PDF KTN2222S/AS KTN2222S KTN2222AS OT-23 KTN2222AS TD0037fl KTN222S marking cox

    Untitled

    Abstract: No abstract text available
    Text: SEMICONDUCTOR TECHNICAL DA TA KTN2222U/AU EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES • Low Leakage Current : IcE x-10nA M ax. ; V ce-6 0 V , V eb(off)-3V . • Low Saturation Voltage : VcE(sat)=0.3V(Max.) ; Ic=150m A , lB=15mA.


    OCR Scan     		PDF KTN2222U/AU x-10nA KTN2907U/2907AU. KTN2222U KTN2222AU

    2222a

    Abstract: 1N 2907A 2907A similar transistor h pn 2222a 2n2222 kec 400OT KTN2222A transistor 2222a KTN2222 transistor pn 2222a
    Text: KEC SEMICONDUCTOR TECHNICAL DA TA KOREA ELECTRONICS CO.,LTD. KTN2222/A EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES • Low Leakage Current : I c E x - 1 0 n A M a x . ; V c e = 6 0 V , V e b (o ff )= 3V .


    OCR Scan     		PDF KTN2222/A 150mA, KTN2907/2907A. KTN2222/2222A 2N2222/2222A. KTN2222 KTN2222A KTN2222/A 2222a 1N 2907A 2907A similar transistor h pn 2222a 2n2222 kec 400OT KTN2222A transistor 2222a transistor pn 2222a

    KTN2222AU

    Abstract: KTN2222U
    Text: SEMICONDUCTOR TECHNICAL DATA KTN2222U/AU EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES • Low Leakage Current : IcE x-10nA M ax. ; V ce-6 0 V , V eb(off)-3V . • Low Saturation Voltage : VcE(sat)=0.3V(Max.) ; Ic=150m A , lB=15mA.


    OCR Scan     		PDF KTN2222U/AU 150mA, KTN2907U/2907AU. KTN2222U KTN2222AU 10X8X0 KTN2222AU

    sot-23 MARKING 25J

    Abstract: sot-23 25J sot-23 MARK 25J KTN2222AS KTN2222S KTN2222AS SOT-23
    Text: KEC SEMICONDUCTOR TECHNICAL DATA KOREA ELECTRONICS CO.,LTD. KTN2222S/AS EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES • Low Leakage Current ; IcEx=10nA M ax. ; V ce=60V, V eb <o f f )=3 V . • Low Saturation Voltage


    OCR Scan     		PDF KTN2222S/AS 150mA, KTN2907S/2907AS. KTN2222S KTN2222AS 10x8x0 sot-23 MARKING 25J sot-23 25J sot-23 MARK 25J KTN2222AS KTN2222AS SOT-23