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    KTC3199 Price and Stock

    Micro Commercial Components KTC3199-O-AP

    TRANS NPN 50V 0.15A TO92S
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    DigiKey KTC3199-O-AP Ammo Pack
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    Micro Commercial Components KTC3199-Y-AP

    TRANS NPN 50V 0.15A TO92S
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    Micro Commercial Components KTC3199-BL-AP

    TRANS NPN 50V 0.15A TO92S
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    Micro Commercial Components KTC3199-GR-AP

    TRANS NPN 50V 0.15A TO92S
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    KEC KTC3199GR

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    Bristol Electronics KTC3199GR 35,036
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    Find more KTC3199 price and stock on Findchips.com

    KTC3199 Datasheets (9)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    KTC3199 Korea Electronics General Purpose Transistor Original PDF
    KTC3199 Micro Commercial Components NPN General Purpose Transistor Original PDF
    KTC3199 Korea Electronics General Purpose Transistor Scan PDF
    KTC3199 Korea Electronics EPITAXIAL PLANAR NPN TRANSISTOR Scan PDF
    KTC3199 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    KTC3199 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    KTC3199L Korea Electronics Low Noise Transistor Original PDF
    KTC3199L Korea Electronics EPITAXIAL PLANAR NPN TRANSISTOR Scan PDF
    KTC3199L Korea Electronics Low Noise Transistor Scan PDF

    KTC3199 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    KTA1267

    Abstract: No abstract text available
    Text: MCC   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# KTA1267 Features • • • Excellent hFE Linearity: hFE 0.1mA /h FE (2.0mA)=0.95(Typ) Low Noise: NF=1.0dB(Typ.), 10dB(Max.) Complementary to KTC3199


    Original     		PDF KTA1267 KTC3199 O-92S KTA1267

    c3199

    Abstract: transistor c3199 C3199 transistor transistor C3199 GR C3199 gr ktC3199 transistor C3199 y
    Text: MCC   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# TM Micro Commercial Components KTC3199 Features • • • • High DC Current Gain: hFE=70~700 Excellent hFE Linearity: hFE 0.1mA /h FE (2.0mA)=0.95(Typ)


    Original     		PDF KTC3199 KTA1267 C3199 O-92S c3199 transistor c3199 C3199 transistor transistor C3199 GR C3199 gr ktC3199 transistor C3199 y

    KTA1267

    Abstract: No abstract text available
    Text: SEMICONDUCTOR KTA1267 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION SWITCHING APPLICATION. B FEATURES A ϒ⁄Excellent hFE Linearity O F : hFE 0.1mA /hFE(2mA)=0.95(Typ.). ・Low Noise : NF=1dB(Typ.), 10dB(Max.). H M G ・Complementary to KTC3199.


    Original     		PDF KTA1267 KTC3199. -100mA, -10mA O-92M KTA1267

    Untitled

    Abstract: No abstract text available
    Text: SEMICONDUCTOR KTC3199 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION SWITCHING APPLICATION. FEATURES 1996. 5. 30 Revision No : 1 1/3


    Original     		PDF KTC3199

    transistor KTC3199

    Abstract: No abstract text available
    Text: MCC   omponents 21201 Itasca Street Chatsworth    !"# $ %    !"# KTA1267 Features • • • Excellent hFE Linearity: hFE 0.1mA /h FE (2.0mA)=0.95(Typ) Low Noise: NF=1.0dB(Typ.), 10dB(Max.) Complementary to KTC3199


    Original     		PDF KTA1267 KTC3199 O-92S transistor KTC3199

    KTC3199 GR

    Abstract: No abstract text available
    Text: MCC   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# TM Micro Commercial Components KTC3199 Features • • • • High DC Current Gain: hFE=70~700 Excellent hFE Linearity: hFE 0.1mA /h FE (2.0mA)=0.95(Typ)


    Original     		PDF KTC3199 KTA1267 O-92S KTC3199 GR

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92S Plastic-Encapsulate Transistors TO – 92S KTA1267 TRANSISTOR PNP 1. EMITTER FEATURES z Excellent hFE Linearity z Complementary to KTC3199 2. COLLECTOR 3. BASE MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)


    Original     		PDF O-92S KTA1267 KTC3199 -100mA -10mA

    c3199

    Abstract: C3199L C319 KTC3199L
    Text: SEMICONDUCTOR KTC3199L MARKING SPECIFICATION TO-92M PACKAGE 1. Marking method Laser Marking 2. Marking C3199L GR 816 No. Item Marking Description 1 Device Name C3199L KTC3199L 2 hFE Grade GR O,Y,GR,BL 3 Lot No. 816 98.06.23 Revision No : 00 8 Year 0 ~ 9 : 1900~1999


    Original     		PDF KTC3199L O-92M C3199L c3199 C3199L C319 KTC3199L

    c3199

    Abstract: transistor C3199 GR
    Text: MCC TM Micro Commercial Components KTC3199-O KTC3199-Y KTC3199-GR KTC3199-BL   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • • • • x • • • • NPN General Purpose Application


    Original     		PDF KTC3199-O KTC3199-Y KTC3199-GR KTC3199-BL KTA1267 C3199 O-92S c3199 transistor C3199 GR

    KTA1267L

    Abstract: KTC3199L
    Text: SEMICONDUCTOR KTA1267L TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR LOW NOISE AMPLIFIER APPLICATION. FEATURES B ᴌExcellent hFE Linearity A : hFE 0.1mA /hFE(2mA)=0.95(Typ.). O F ᴌLow Noise : NF=0.2dB(Typ.), 3dB(Max.). ᴌComplementary to KTC3199L. H G


    Original     		PDF KTA1267L KTC3199L. KTA1267L KTC3199L

    KTA1267

    Abstract: KTC3199 KTA1267 GR
    Text: SEMICONDUCTOR KTA1267 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION SWITCHING APPLICATION. B FEATURES A Excellent hFE Linearity O F : hFE 0.1mA /hFE(2mA)=0.95(Typ.). ᴌLow Noise : NF=1dB(Typ.), 10dB(Max.). H M G ᴌComplementary to KTC3199.


    Original     		PDF KTA1267 KTC3199. KTA1267 KTC3199 KTA1267 GR

    KTC31

    Abstract: KTC3199 GR ktc3199 y
    Text: MCC   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# TM Micro Commercial Components KTC3199 Features • • • • NPN General Purpose Application High DC Current Gain: hFE=70~700 Excellent hFE Linearity: hFE 0.1mA /h FE (2.0mA)=0.95(Typ)


    Original     		PDF KTC3199 KTA1267 O-92S 100mAdc, 10mAdc) 10Vdc, 10KOHM) KTC31 KTC3199 GR ktc3199 y

    c3199

    Abstract: transistor c3199 C3199 transistor KTC3199GR transistor C3199 GR C3199 gr KTC3199Y C3199 y ktc31 KTC3199 GR
    Text: MCC KTC3199 KTC3199-O KTC3199-Y KTC3199-GR KTC3199-BL   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# TM Micro Commercial Components Features • • • • High DC Current Gain: hFE=70~700


    Original     		PDF KTC3199 KTC3199-O KTC3199-Y KTC3199-GR KTC3199-BL KTA1267 C3199 O-92S c3199 transistor c3199 C3199 transistor KTC3199GR transistor C3199 GR C3199 gr KTC3199Y C3199 y ktc31 KTC3199 GR

    C3199

    Abstract: transistor c3199 c3199gr KTC3199 GR C3199 transistor C3199 gr C3199 y KTC3199 C3199 equivalent transistor KTC3199
    Text: SEMICONDUCTOR KTC3199 MARKING SPECIFICATION TO-92M PACKAGE 1. Marking method Laser Marking 2. Marking C3199 GR 116 No. Item Marking 1 Device Name C3199 KTC3199 2 hFE Grade GR O,Y,GR,BL 3 Lot No. 116 01.09.27 Revision No : 01 Description 1 Year 0 ~ 9 : 2000~2009


    Original     		PDF KTC3199 O-92M C3199 C3199 transistor c3199 c3199gr KTC3199 GR C3199 transistor C3199 gr C3199 y KTC3199 C3199 equivalent transistor KTC3199

    Untitled

    Abstract: No abstract text available
    Text: SEMICONDUCTOR KTA1267 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION SWITCHING APPLICATION. FEATURES ϒ⁄Excellent hFE Linearity : hFE 0.1mA /hFE(2mA)=0.95(Typ.). ・Low Noise : NF=1dB(Typ.), 10dB(Max.). ・Complementary to KTC3199.


    Original     		PDF KTA1267 KTC3199. -100mA, -10mA

    KTA1267L

    Abstract: KTC3199L
    Text: SEMICONDUCTOR KTC3199L TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR LOW NOISE AUDIO AMPLIFIER APPLICATION. FEATURES B ᴌHigh DC Current Gain : hFE=70ᴕ700. A ᴌExcellent hFE Linearity O F : hFE 0.1mA /hFE(2mA)=0.95(Typ.). ᴌLow Noise : NF=0.2dB(Typ.), 3dB(Max.).


    Original     		PDF KTC3199L KTA1267L. 100Hz, 100mA, KTA1267L KTC3199L

    transistor KTC3199

    Abstract: KTA1267 KTC3199 KTC3199 GR
    Text: SEMICONDUCTOR KTC3199 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION SWITCHING APPLICATION. B FEATURES A ᴌHigh DC Current Gain : hFE=70~700. O F ᴌExcellent hFE Linearity : hFE 0.1mA /hFE(2mA)=0.95(Typ.). H M G ᴌLow Noise : NF=1dB(Typ.), 10dB(Max.).


    Original     		PDF KTC3199 KTA1267. transistor KTC3199 KTA1267 KTC3199 KTC3199 GR

    KTC3199 GR

    Abstract: KTC3199 transistor KTC3199 ktC3199 transistor ktc3199 y ktc31 npn hfe 120-240
    Text: KTC3199 KTC3199 TO-92S TRANSISTOR NPN FEATURES Power dissipation PCM: 1. EMITTER 400 2. COLLECTOR mW (Tamb=25℃) Collector current ICM: 150 mA Collector-base voltage 50 V V(BR)CBO: Operating and storage junction temperature range 3. BASE 123 TJ, Tstg: -55℃ to +150℃


    Original     		PDF KTC3199 O-92S 100mA, KTC3199 GR KTC3199 transistor KTC3199 ktC3199 transistor ktc3199 y ktc31 npn hfe 120-240

    KTC3199 GR

    Abstract: No abstract text available
    Text: MCC   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# KTC3199 Features • • • • NPN General Purpose Application High DC Current Gain: hFE=70~700 Excellent hFE Linearity: hFE 0.1mA /h FE (2.0mA)=0.95(Typ)


    Original     		PDF KTC3199 KTA1267 O-92S 100mAdc, 10mAdc) 10Vdc, 10KOHM) KTC3199 GR

    Untitled

    Abstract: No abstract text available
    Text: SEMICONDUCTOR TECHNICAL DATA KTA1267 e p it a x ia l p la n a r pnp t r a n s i s t o r GENERAL PURPOSE APPLICATION SWITCHING APPLICATION. FEATURES • Excellent h FE Linearity : hFE 0.1mA /hFE(2mA)=0.95(Typ.). • Low Noise : NF=ldB(Typ.), 10dB(Max.). • Complementary to KTC3199.


    OCR Scan     		PDF KTA1267 KTC3199.

    transistor wu1

    Abstract: transistor wu1 5
    Text: SEMICONDUCTOR TECHNICAL DATA KTA1267L EPITAXIAL PLANAR PNP TRANSISTOR LOW NOISE AMPLIFIER APPLICATION. FEATURES • Excellent hFF Linearity : hFE 0.1mA /W2rnA)=0.95(Typ.). • Low Noise : NF=0.2dB(Typ.), 3dB(Max.). • Complementary to KTC3199L. MAXIMUM RATINGS (Ta=25°C)


    OCR Scan     		PDF KTA1267L KTC3199L. transistor wu1 transistor wu1 5

    KTC3199

    Abstract: KTA1267 ktC3199 transistor
    Text: SEMICONDUCTOR TECHNICAL DATA KTC3199 EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES • High DC Current Gain : hFE=70~700. • Excellent I lfe Linearity : hFE 0.1mA /hFE(2mA)=0.95(Typ.). • Low Noise : NF=ldB(Typ.), 10dB(Max.).


    OCR Scan     		PDF KTC3199 KTA1267. T0-92M KTC3199 KTA1267 ktC3199 transistor

    KTA1267L

    Abstract: KTC3199L hFE transistor 200
    Text: SEMICONDUCTOR TECHNICAL DATA KTC3199L EPITAXIAL PLANAR NPN TRANSISTOR LOW NOISE AUDIO AMPLIFIER APPLICATION. FEATURES • High DC Current Gain : hFE=70~700. • Excellent h FE Linearity : hFE 0.1mA /W2rnA)=0.95(Typ.). • Low Noise : NF=0.2dB(Typ.), 3dB(Max.).


    OCR Scan     		PDF KTC3199L KTA1267L. T0-92M 100mA, 100Hz, KTA1267L KTC3199L hFE transistor 200

    ER100

    Abstract: No abstract text available
    Text: S EM IC O N D U C T O R KTC3199 TECHNI CAL DATA EPI TAXI AL PLANAR NPN TRA NS IST OR G E N E R A L PUR PO SE A PPLICATIO N SW ITC H IN G APPLICATIO N. FEA T U RE S • H igh DC C urrent G ain : h FE=70~700. • E xcellent h FE L inearity : h FE 0 .1m A /h FE(2m A )=0.95(T yp.).


    OCR Scan     		PDF KTC3199 ER100