Untitled
Abstract: No abstract text available
Text: KSR1105 KSR1105 Switching Application Bias Resistor Built In • Switching circuit, Inverter, Interface circuit, Driver Circuit • Built in bias Resistor (R1 =4.7KΩ, R2=10KΩ) • Complement to KSR2105 3 2 SOT-23 1 1. Base 2. Emitter 3. Collector Equivalent Circuit
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KSR1105
KSR2105
OT-23
OT-23
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KSR1105
Abstract: KSR2105
Text: KSR1105 KSR1105 Switching Application Bias Resistor Built In • Switching circuit, Inverter, Interface circuit, Driver Circuit • Built in bias Resistor (R1 =4.7KΩ, R2=10KΩ) • Complement to KSR2105 2 1 SOT-23 1. Base 2. Emitter 3. Collector Equivalent Circuit
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KSR1105
KSR2105
OT-23
KSR1105
KSR2105
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KSR1105
Abstract: KSR2105
Text: KSR2105 KSR2105 Switching Application Bias Resistor Built In • Switching circuit, Inverter, Interface circuit, Driver Circuit • Built in bias Resistor (R1=4.7KΩ, R2=10KΩ) • Complement to KSR1105 3 2 1 SOT-23 1. Base 2. Emitter 3. Collector Equivalent Circuit
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KSR2105
KSR1105
OT-23
KSR1105
KSR2105
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KSR1105
Abstract: KSR2105
Text: KSR1105 KSR1105 Switching Application Bias Resistor Built In • Switching circuit, Inverter, Interface circuit, Driver Circuit • Built in bias Resistor (R1 =4.7KΩ, R2=10KΩ) • Complement to KSR2105 3 2 SOT-23 1 1. Base 2. Emitter 3. Collector Equivalent Circuit
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KSR1105
KSR2105
OT-23
KSR1105
KSR2105
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KSR1105
Abstract: KSR2105
Text: KSR1105 NPN EPITAXIAL SILICON TRANSISTOR SWITCHING APPLICATION Bias Resistor Built In SOT-23 • Switching circuit, Inverter, Interface circuit, Driver Circuit • Built in bias Resistor (R1 =4.7KΩ, R2=10KΩ) • Complement to KSR2105 ABSOLUTE MAXIMUM RATINGS (TA=25°°C)
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KSR1105
OT-23
KSR2105
KSR1105
KSR2105
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Untitled
Abstract: No abstract text available
Text: KSR2105 KSR2105 Switching Application Bias Resistor Built In • Switching circuit, Inverter, Interface circuit, Driver Circuit • Built in bias Resistor (R1=4.7KΩ, R2=10KΩ) • Complement to KSR1105 3 2 1 SOT-23 1. Base 2. Emitter 3. Collector Equivalent Circuit
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KSR2105
KSR1105
OT-23
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ksr2105
Abstract: No abstract text available
Text: KSR2105 KSR2105 Switching Application Bias Resistor Built In • Switching circuit, Inverter, Interface circuit, Driver Circuit • Built in bias Resistor (R1=4.7KΩ, R2=10KΩ) • Complement to KSR1105 3 2 1 SOT-23 1. Base 2. Emitter 3. Collector Equivalent Circuit
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KSR2105
KSR1105
OT-23
OT-23
ksr2105
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Untitled
Abstract: No abstract text available
Text: KSR2105 KSR2105 Switching Application Bias Resistor Built In • Switching circuit, Inverter, Interface circuit, Driver Circuit • Built in bias Resistor (R1=4.7KΩ, R2=10KΩ) • Complement to KSR1105 2 1 SOT-23 1. Base 2. Emitter 3. Collector Equivalent Circuit
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KSR2105
KSR1105
OT-23
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KSR1105
Abstract: KSR2105
Text: KSR2105 PNP EPITAXIAL SILICON TRANSISTOR SWITCHING APPLICATION Bias Resistor Built In • Switching circuit, Inverter, Interface circuit, Driver Circuit • Built in bias Resistor (R1=4.7KΩ, R2=10KΩ) • Complement to KSR1105 SOT-23 ABSOLUTE MAXIMUM RATINGS (TA=25°°C)
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KSR2105
KSR1105
OT-23
KSR1105
KSR2105
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KSR1105
Abstract: KSR2105
Text: KSR2105 KSR2105 Switching Application Bias Resistor Built In • Switching circuit, Inverter, Interface circuit, Driver Circuit • Built in bias Resistor (R1=4.7KΩ, R2=10KΩ) • Complement to KSR1105 2 1 SOT-23 1. Base 2. Emitter 3. Collector Equivalent Circuit
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KSR2105
KSR1105
OT-23
KSR1105
KSR2105
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fairchild sot-23 Device Marking pc
Abstract: KSR1105 KSR2105
Text: KSR1105 KSR1105 Switching Application Bias Resistor Built In • Switching circuit, Inverter, Interface circuit, Driver Circuit • Built in bias Resistor (R1 =4.7KΩ, R2=10KΩ) • Complement to KSR2105 3 2 SOT-23 1 1. Base 2. Emitter 3. Collector Equivalent Circuit
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KSR1105
KSR2105
OT-23
fairchild sot-23 Device Marking pc
KSR1105
KSR2105
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SSP35n03
Abstract: bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent
Text: Cross Reference Guide Industry 1.5KE100A 1.5KE100CA 1.5KE10A 1.5KE10CA 1.5KE110A 1.5KE110CA 1.5KE11A 1.5KE11CA 1.5KE120A 1.5KE120CA 1.5KE12A 1.5KE12CA 1.5KE130A 1.5KE130CA 1.5KE13A 1.5KE13CA 1.5KE150A 1.5KE150CA 1.5KE15A 1.5KE15CA 1.5KE160A 1.5KE160CA 1.5KE16A
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5KE100A
5KE100CA
5KE10A
5KE10CA
5KE110A
5KE110CA
5KE11A
5KE11CA
5KE120A
5KE120CA
SSP35n03
bc417
ksh200 equivalent
2N5457 equivalent
ss8050 equivalent
1N34 equivalent
FQP50N06 equivalent
bd139 equivalent
2N5458 equivalent
2N3563 equivalent
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STF12A80
Abstract: BSTC1026 BSTD1046 BTB04-600SAP STF6A80 BSTD1040 TO510DH BSTC1040 TO812NJ BTB15-700B
Text: Cross Reference For the most up to date cross reference, go to the product portal: Manufacturer type number Manufacturer Philips type number Page number Manufacturer type number Manufacturer
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02CZ10
02CZ11
02CZ12
02CZ13
02CZ15
02CZ16
02CZ18
02CZ2
02CZ20
STF12A80
BSTC1026
BSTD1046
BTB04-600SAP
STF6A80
BSTD1040
TO510DH
BSTC1040
TO812NJ
BTB15-700B
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transistor SMD s72
Abstract: nec mys 501 MYS 99 transistor 8BB smd st MYS 99 102 kvp 81A kvp 81A DIODE Kvp 69A kvp 86a smd transistor A7p
Text: ВВЕДЕНИЕ Впервые, сделана столь масштабная попытка, разобраться с маркировкой компонентов поверхностного монтажа SMD . Конечно, книга не является панацеей, но на взгляд авторов должна существенно помочь в той
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OT323
BC818W
MUN5131T1.
BC846A
SMBT3904,
MVN5131T1
SMBT3904
OT323
transistor SMD s72
nec mys 501
MYS 99
transistor 8BB smd
st MYS 99 102
kvp 81A
kvp 81A DIODE
Kvp 69A
kvp 86a
smd transistor A7p
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Untitled
Abstract: No abstract text available
Text: KSR2105 PNP EPITAXIAL SILICON TRANSISTOR SWITCHING APPLICATION Bias Resistor Built In SOT-23 • Switching Circuit, Inverter, Interlace circuit Driver circuit • Built in bias Resistor (R,=4.7K1), R2=10Kfl) • Complement to KSR1105 ABSOLUTE MAXIMUM RATINGS (Ta=25°C )
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KSR2105
OT-23
10Kfl)
KSR1105
7Tbm42
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Untitled
Abstract: No abstract text available
Text: KSR1105 NPN EPITAXIAL SILICON TRANSISTOR SWITCHING APPLICATION Bias Resistor Built In S O T -2 3 • Switching Circuit, Inverter, Interface circuit Driver circuit • Built in bias Resistor (R,=4.7KQ, R2=10KQ) • Complement to KSR2105 % ABSOLUTE MAXIMUM RATINGS (Ta=25°C)
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KSR1105
KSR2105
100/iA
7Tb4142
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IC SEM 2105
Abstract: sem 2105 inverter sem 2105 inverter /IC SEM 2105
Text: NPN EPITAXIAL SILICON TRANSISTOR KSR1105 SWITCHING APPLICATION Bias Resistor Built In • Sw itching circuit, Inverter, Interface circuit, D river C ircuit • Built in bias R esistor (R i =A.1KQ., R2=10K£i) • C om plem ent to K S R 2105 ABSOLUTE MAXIMUM RATINGS (TA=25°C)
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KSR1105
IC SEM 2105
sem 2105
inverter sem 2105
inverter /IC SEM 2105
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7K MARKING
Abstract: 500C KSR1105 KSR2105 47KJ
Text: NPN EPITAXIAL SILICON TRANSISTOR KSR1105 SWITCHING APPLICATION B ias R esistor Built In S O T-23 • Sw itching circuit, Inverter, Interface circuit, D river C ircuit • Built in bias R esistor (R i =4.7K£1, R2=10K£1) • C om plem ent to KSR2105 ABSOLUTE MAXIMUM RATINGS (TA=25°C)
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KSR1105
KSR2105
7K MARKING
500C
KSR1105
KSR2105
47KJ
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Untitled
Abstract: No abstract text available
Text: KSR2105 PNP EPITAXIAL SILICON TRANSISTOR SWITCHING APPLICATION Bias Resistor Built In SOT-23 • Switching circuit, Inverter, Interface circuit, Driver Circuit • Built in bias Resistor (R!=4.7Ki2, R2=10Ki2) • Complement to KSR1105 ABSOLUTE MAXIMUM RATINGS (Ta=25°C)
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KSR2105
OT-23
10Ki2)
KSR1105
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KSR1105
Abstract: KSR2105 transistor saa
Text: SAMSUNG SEM ICO NDU CTOR .INC T ’ S & 'M 1 4 E | 7^4142 000704? t. | KSR1105 NPN EPITAXIAL SILICON TRANSISTOR SWITCHING APPLICATION Bias Resistor Built In SO T-23 • Switching Circuit, Inverter, Interface circuit Driver circuit • Built in bias Resistor (R,=4.7KO, R,=10KD)
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-U14E
KSR1105
KSR2105
OT-23
Q00704Ã
-10K-H
KSR2105
transistor saa
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KSR2105
Abstract: No abstract text available
Text: KSR2105 PNP EPITAXIAL SILICON TRANSISTOR SWITCHING APPLICATION B ias R esistor B u ilt In • Switching circuit, Inverter, Interface circuit, Driver Circuit • Built in bias Resistor (R« =4.7Iifl, R^IO kÚ) • Complement to KSR1105 SOT-23 ABSOLUTE MAXIMUM RATINGS (TA=25‘C)
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KSR2105
KSR1105
OT-23
-100/iA.
-10mA,
-100M
KSR2105
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transistor 13003 AD
Abstract: ksd-180 HF 13003 KSD180 13003 HF KSD168 KSD966 ksd-168 PNP NPN Transistor VCEO 120V 100V Ic 7A KSC 1.5k 250v
Text: TRANSISTORS FUNCTION GUIDE 1. SMALL SIGNAL TRANSISTORS 1.1 General Purpose Transistors 1.1.1 SOT-23 Type Transistors Device and Polarity Marking Condition V ceo lc Vce h FE Condition (c le Vce(sat},VBE(sat)(v) Condition fiÌMHz) (V) (A) (V) !c (mA) (mA)
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OT-23
KST06
KST05
KSC1623
BCW71
BCX70G
BCX70H
BCX70J
BCX70K
BCX71G
transistor 13003 AD
ksd-180
HF 13003
KSD180
13003 HF
KSD168
KSD966
ksd-168
PNP NPN Transistor VCEO 120V 100V Ic 7A
KSC 1.5k 250v
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ksd 168
Abstract: KSA 1102 ksd 301 ksp13 601 KSD 105 13003 bd KSR1107 SA1142 13003 sd KSC5027
Text: ALPHANUMERIC INDEX 1. KSA Series Device KSA473 KSA539 KSA542 KSA614 KSA642 KSA643 KSA708 KSA709 KSA733 KSA812 KSA910 KSA916 KSA928 KSA931 KSA940 KSA954 KSA992 KSA1010 KSA1013 KSA1015 K SA 1142 KSA1150 KSA1156 KSA1174 KSA1175 KSA1182 KSA1201 KSA1203 KSA1220
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KSA473
KSA539
KSA542
KSA614
KSA642
KSA643
KSA708
KSA709
KSA733
KSA812
ksd 168
KSA 1102
ksd 301
ksp13 601
KSD 105
13003 bd
KSR1107
SA1142
13003 sd
KSC5027
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WY transistor
Abstract: KSR1105 KSR2105
Text: SAMSUNG S E M IC O N D U C T O R INC KSR2105 14E D | 7*11,41^2 0 0 0 7 1 1 ^ 5 J| PNP EPITAXIAL SILICON TRANSISTOR SWITCHING APPLICATION T-31- I3 Bias Resistor Built In SO T-23 • Switching Circuit, Inverter, Interface circuit Driver circuit • Built In bias Resistor (R,=4.7Kß, R2=10Kß)
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KSR2105
KSR1105
OT-23
WY transistor
KSR1105
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