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    onsemi KSE801STU

    TRANS NPN DARL 60V 4A TO126-3
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    KSE801 Datasheets (5)

    Part ECAD Model Manufacturer Description Curated Type PDF
    KSE801 Fairchild Semiconductor NPN Epitaxial Silicon Darlington Transistor Original PDF
    KSE801 Fairchild Semiconductor SILICON DARLINGTON TRANSISTOR Original PDF
    KSE801 Fairchild Semiconductor NPN EPITAXIAL SILICON DARLINGTON TRANSISTOR Scan PDF
    KSE801 Samsung Electronics Transistor Function Guide Scan PDF
    KSE801STU Fairchild Semiconductor NPN Epitaxial Silicon Darlington Transistor Original PDF

    KSE801 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    fjaf6812

    Abstract: tip41 darlington fjaf6920 BUT12(A)F KSA1010 transistor bd140-15 bu408 equivalent FJL6920 equivalent fjl6820 FJL6920
    Text: Discrete Bipolar Power Transistor – General Purpose Part Number IC A VCEO (V) VCBO (V) VEBO (V) PC (W) hFE VCE (sat) Min Max @ IC (A) Typ (V) Max (V) TO-126 NPN Configuration KSC2682 0.1 180 180 5 8 100 320 0.01 0.12 0.5 KSC3502 0.1 200 200 5 5 40 320


    Original     		PDF O-126 KSC2682 KSC3502 KSC2258 KSC2258A KSC3503 KSC3953 KSC2688 BD150 KSC5305D fjaf6812 tip41 darlington fjaf6920 BUT12(A)F KSA1010 transistor bd140-15 bu408 equivalent FJL6920 equivalent fjl6820 FJL6920

    transistor k 702

    Abstract: TRANSISTOR S 802 kse800
    Text: KSE800/801/802/803 KSE800/801/802/803 Monolithic Construction With Built-in BaseEmitter Resistors • High DC Current Gain : hFE= 750 Min. @ IC= 1.5 and 2.0A DC • Complement to KSE700/701/702/703 TO-126 1 1. Emitter 2.Collector 3.Base NPN Epitaxial Silicon Darlington Transistor


    Original     		PDF KSE800/801/802/803 KSE700/701/702/703 O-126 KSE800/801 KSE802/803 KSE802/803 KSE800 KSE800S transistor k 702 TRANSISTOR S 802

    thermistor KSD201

    Abstract: IRF power mosfets catalog Complementary MOSFETs buz11 BZX85C6V8 SPICE MODEL Diode 1N4001 50V 1.0A DO-41 Rectifier Diode K*D1691 make SMPS inverter welding machine transistor KSP44 1N5402 spice model tip122 tip127 mosfet audio amp
    Text: Fairchild Semiconductor Product Catalog 2004 Microcontrollers Optoelectronics Across the board. Around the world. Analog Discrete Interface & Logic Interface & Logic Discrete Power Optoelectronics Analog & Mixed Signal Fairchild Semiconductor, The Power Franchise™


    Original     		PDF

    tip122 tip127 audio board

    Abstract: BUK 450-1000 Transistor Selection Guide tip122 tip127 audio amp FJL6920 equivalent car amp TIP41/TIP42 kse13009 TRANSISTOR TIP31 FJL6920
    Text: Bipolar Power Transistor Selection Guide Bipolar Power Transistor Selection Guide Analog Discrete Interface & Logic Optoelectronics January 2003 Across the board. Around the world. Bipolar Power Transistor Selection Guide January 2003 Table of Contents


    Original     		PDF Power247TM, tip122 tip127 audio board BUK 450-1000 Transistor Selection Guide tip122 tip127 audio amp FJL6920 equivalent car amp TIP41/TIP42 kse13009 TRANSISTOR TIP31 FJL6920

    FQPF*7N65C APPLICATIONS

    Abstract: bc548 spice model bf494 spice model spice model bf199 LM3171 BC517 spice model bc547 spice model BF494 spice MOC3043-M spice model SPICE model BC237
    Text: Fairchild PSG.book Page i Wednesday, July 28, 2004 11:12 AM Fairchild Semiconductor Product Catalog Rev. 1 Analog & Mixed Signal Discrete Power Interface & Logic Microcontrollers Optoelectronics RF Power Front Matter.fm Page ii Monday, August 2, 2004 10:09 AM


    Original     		PDF UF4003. UF4004. UF4005. UF4006. UF4007. USB10H. USB1T1102 USB1T11A. vKA75420M W005G FQPF*7N65C APPLICATIONS bc548 spice model bf494 spice model spice model bf199 LM3171 BC517 spice model bc547 spice model BF494 spice MOC3043-M spice model SPICE model BC237

    SSP35n03

    Abstract: bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent
    Text: Cross Reference Guide Industry 1.5KE100A 1.5KE100CA 1.5KE10A 1.5KE10CA 1.5KE110A 1.5KE110CA 1.5KE11A 1.5KE11CA 1.5KE120A 1.5KE120CA 1.5KE12A 1.5KE12CA 1.5KE130A 1.5KE130CA 1.5KE13A 1.5KE13CA 1.5KE150A 1.5KE150CA 1.5KE15A 1.5KE15CA 1.5KE160A 1.5KE160CA 1.5KE16A


    Original     		PDF 5KE100A 5KE100CA 5KE10A 5KE10CA 5KE110A 5KE110CA 5KE11A 5KE11CA 5KE120A 5KE120CA SSP35n03 bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent

    BDX548

    Abstract: KSB1023 power BJT MJD117 Darlington bdx33c KSD5018 PNP dpak npn BD675A BD677A KSD1692
    Text: Discrete Power BJT darlington Products IC A VCEO (V) VCBO (V) VEBO (V) hFE PC (W) VCE (sat) Min Max @ IC (A) Typ (V) Max (V) TO-126 NPN Configuration KSD985 1.5 60 150 8 10 2000 30000 1 - 1.5 KSD986 1.5 80 150 8 10 2000 30000 1 - 1.5 KSD1692 3 100 150 8


    Original     		PDF O-126 KSD985 KSD986 KSD1692 BD675A BD677A KSE800 KSE801 MJE800 TIP146 BDX548 KSB1023 power BJT MJD117 Darlington bdx33c KSD5018 PNP dpak npn BD675A BD677A KSD1692

    transistors mje13005

    Abstract: MJE4340 MJE4341 MJE4342 MJE4343 MJH6282 MJH6283 MJH6284 TIP35 TIP35A
    Text: Power Transistors Operating Temperature: -65o C to 150o C h FE Part No. and Polarity IC NPN MJE4340 MJE4341 MJE4342 MJE4343 MJH6282 MJH6283 MJH6284 TIP35 TIP35A TIP35B TIP35C - PNP MJE4350 MJE4351 MJE4352 MJE4353 MJH6285 MJH6286 MJH6287 TIP36 TIP36A TIP36B


    Original     		PDF MJE4350 MJE4351 MJE4352 MJE4353 MJH6285 MJH6286 MJH6287 TIP36 TIP36A TIP36B transistors mje13005 MJE4340 MJE4341 MJE4342 MJE4343 MJH6282 MJH6283 MJH6284 TIP35 TIP35A

    702 TRANSISTOR

    Abstract: kse800
    Text: KSE800/801/803 NPN EPITAXIAL SILICON DARLINGTON TRANSISTOR HIGH DC CURRENT GAIN MIN hFE= 750 @IC= 1.5 and 2.0A DC MONOLITHIC CONSTRUCTION WITH BUILT-IN BASE-EMITTER RESISTORS TO-126 • Complement to KSE700/701/702/703 ABSOLUTE MAXIMUM RATINGS Characteristic


    Original     		PDF KSE800/801/803 O-126 KSE700/701/702/703 KSE800/801 KSE802/803 702 TRANSISTOR kse800

    E802

    Abstract: KSE800
    Text: KSE800/801/802/803 KSE800/801/802/803 Monolithic Construction With Built-in BaseEmitter Resistors • High DC Current Gain : hFE= 750 Min. @ IC= 1.5 and 2.0A DC • Complement to KSE700/701/702/703 TO-126 1 1. Emitter 2.Collector 3.Base NPN Epitaxial Silicon Darlington Transistor


    Original     		PDF KSE800/801/802/803 KSE700/701/702/703 O-126 KSE800/801 KSE802/803 E802 KSE800

    ss8050 d 331

    Abstract: tip122 tip127 mosfet audio amp KSD180 KA1M0880 application note SS8550 D 331 dual cc BAW62 KA2S0680 ss8550 sot-23 MPSA92(KSP92) equivalent DIODE 1N4148 LL-34
    Text: Power Products S e l e c t i o n G u i d e September, 1999 Power Products Table of Contents Alphanumeric Listing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2


    Original     		PDF F-91742 ss8050 d 331 tip122 tip127 mosfet audio amp KSD180 KA1M0880 application note SS8550 D 331 dual cc BAW62 KA2S0680 ss8550 sot-23 MPSA92(KSP92) equivalent DIODE 1N4148 LL-34

    ic 803

    Abstract: KSE800
    Text: KSE800/801/802/803 KSE800/801/802/803 Monolithic Construction With Built-in BaseEmitter Resistors • High DC Current Gain : hFE= 750 Min. @ IC= 1.5 and 2.0A DC • Complement to KSE700/701/702/703 TO-126 1 1 . Emitter 2. Collector 3. Base NPN Epitaxial Silicon Darlington Transistor


    Original     		PDF KSE800/801/802/803 KSE700/701/702/703 O-126 KSE800/801 KSE802/803 KSE802/803 ic 803 KSE800

    ic 803

    Abstract: transistor 2A 3v kse800 KSE800 Transistor darlington transistor with built-in temperature c kse70 pc 801 transistor 803
    Text: NPN EPITAXIAL SILICON DARLINGTON TRANSISTOR KSE800/801/803 HIGH DC CURRENT GAIN MIN hFE= 750 IC= -1.5 and -2.0A DC MONOLITHIC CONSTRUCTION WITH BUILT-IN BASE-EMITTER RESISTORS { TO-126 Complement to KSE700/701/702/703 ABSOLUTE MAXIMUM RATINGS Characteristic


    Original     		PDF KSE800/801/803 O-126 KSE700/701/702/703 KSE800/801 KSE802/803 KSE800/802 KSE801/803 ic 803 transistor 2A 3v kse800 KSE800 Transistor darlington transistor with built-in temperature c kse70 pc 801 transistor 803

    kse800

    Abstract: 702 TRANSISTOR 702 Z TRANSISTOR TRansistor L 701
    Text: NPN EPITAXIAL KSE800/801/803 SILICON DARLINGTON TRANSISTOR HIGH DC CURRENT GAIN MIN hFE= 750 @lc= 1.5 and 2.0A DC MONOLITHIC CONSTRUCTION WITH BUILT-IN BASE-EMITTER RESISTORS • C om plem ent to KSE700/701/702/703 ABSOLUTE MAXIMUM RATINGS C haracteristic


    OCR Scan     		PDF E800/801/803 KSE700/701/702/703 O-126 KSE800/801 KSE802/803 kse800 702 TRANSISTOR 702 Z TRANSISTOR TRansistor L 701

    transistor 13003 AD

    Abstract: ksd-180 HF 13003 KSD180 13003 HF KSD168 KSD966 ksd-168 PNP NPN Transistor VCEO 120V 100V Ic 7A KSC 1.5k 250v
    Text: TRANSISTORS FUNCTION GUIDE 1. SMALL SIGNAL TRANSISTORS 1.1 General Purpose Transistors 1.1.1 SOT-23 Type Transistors Device and Polarity Marking Condition V ceo lc Vce h FE Condition (c le Vce(sat},VBE(sat)(v) Condition fiÌMHz) (V) (A) (V) !c (mA) (mA)


    OCR Scan     		PDF OT-23 KST06 KST05 KSC1623 BCW71 BCX70G BCX70H BCX70J BCX70K BCX71G transistor 13003 AD ksd-180 HF 13003 KSD180 13003 HF KSD168 KSD966 ksd-168 PNP NPN Transistor VCEO 120V 100V Ic 7A KSC 1.5k 250v

    transistor H 802

    Abstract: PC 801 S
    Text: NPN EPITAXIAL KSE800/801/803 SILICON DARLINGTON TRANSISTOR HIGH DC CURRENT GAIN MIN hFE= 750 @ lc= 1.5 and 2.0A DC MONOLITHIC CONSTRUCTION WITH BUILT-IN BAS E-EMITTER RESISTORS * Complement to KSE700/701/702/703 ABSOLUTE MAXIMUM RATINGS C haracteristic Symbol


    OCR Scan     		PDF KSE800/801/803 KSE700/701/702/703 KSE800/801 KSE802/803 transistor H 802 PC 801 S

    ksd 250v 10a

    Abstract: ksd 202 ksd 180 13003 bd ksd 250v ksd 75 bow 94c bdx 44b ksd 250V 5A d5072
    Text: TRANSISTORS FUNCTION GUIDE 3. QUICK REFERENCE TABLE APPLICATION 3.1 Audio Equipment Package SOT-23 TO-92 TO-92L TO-126 TO-220 Application FM RM AMP KSC2223 Mix Conv KSC2223 Local Ose KSC2223 IF AM Diff. Amp KSC2715 RF KSC1623 Conv Ose KSC2715 IF KSC2715


    OCR Scan     		PDF OT-23 KSC2223 KSC2715 KSC1674 KSC1674/ KSC167Î KSC838/KSC167 ksd 250v 10a ksd 202 ksd 180 13003 bd ksd 250v ksd 75 bow 94c bdx 44b ksd 250V 5A d5072

    ksd 180

    Abstract: ksd 180/60 ksd 250 se130 tip142
    Text: TRANSISTO RS FUNCTION GUIDE 2. POWER TRANSISTORS 2.1. General Purpose Transistors 2.1.1 T O -1 2 6 Type T r a n s is to rs Device Type Condition Ic VCEO A (V) NPN PNP 0.1 180 KSC2682 KSA1142 200 KSC3502 300 KSC3503 0.1 VCE 200 Condition hFE Ic Ic VcE{sat)(V)


    OCR Scan     		PDF KSC2682 KSC3502 KSC3503 KSC3953 KSC2258 KSC2258A KSC5036 KSC2688 KSC5035 KSC5034 ksd 180 ksd 180/60 ksd 250 se130 tip142

    ksd 168

    Abstract: KSA 1102 ksd 301 ksp13 601 KSD 105 13003 bd KSR1107 SA1142 13003 sd KSC5027
    Text: ALPHANUMERIC INDEX 1. KSA Series Device KSA473 KSA539 KSA542 KSA614 KSA642 KSA643 KSA708 KSA709 KSA733 KSA812 KSA910 KSA916 KSA928 KSA931 KSA940 KSA954 KSA992 KSA1010 KSA1013 KSA1015 K SA 1142 KSA1150 KSA1156 KSA1174 KSA1175 KSA1182 KSA1201 KSA1203 KSA1220


    OCR Scan     		PDF KSA473 KSA539 KSA542 KSA614 KSA642 KSA643 KSA708 KSA709 KSA733 KSA812 ksd 168 KSA 1102 ksd 301 ksp13 601 KSD 105 13003 bd KSR1107 SA1142 13003 sd KSC5027

    KSD201

    Abstract: kse800 KS01692 KSE703 KSA1304 KSA1614 KSB1015 KSB1366 KSC3296 KSD1273
    Text: SAMSUNG E L E C T R O N I C S INC bOE D • 7 cíbmM5 TRANSISTORS 2.1.6 0011S3M 67b ■ SMfiK FUNCTION GUIDE T0-220 F Type Transistors Device Type VcEO (A) <V) 1.5 150 3 55 NPN KSC3296 W MIN KSA1304 10 0.5 40 KSA1614 5 0.5 40 PNP Condition *>FE VcE<s«tXV)


    OCR Scan     		PDF T0-220 KSC3296 KSA1304 KSA1614 KSD1406 KSB1015 KSD2012 KSB1366 KSD1273 KSD1944 KSD201 kse800 KS01692 KSE703 KSD1273

    SD1406

    Abstract: SD2058 KSD201 sb1150 SD-1406
    Text: TRANSISTORS FUNCTION GUIDE 2.1.6 T0-220 F Type T ran sisto rs 'c VcEO (A) (V) Device Type V ce NPN 1.5 150 3 55 Condition K SC 3 2 9 6 Condition Hfe lc lc (V) (A) MIN MAX (A) (A) K SA 130 4 10 0.5 40 75 0.5 0.05 K SA 1614 5 0.5 40 240 1 0.1 PNP V CE(sat)(V) Condition


    OCR Scan     		PDF T0-220 KSH12 SD1406 SD2058 KSD201 sb1150 SD-1406

    Untitled

    Abstract: No abstract text available
    Text: FUNCTION GUIDE TRANSISTORS 2.1.6 T0-220 F Type Transistors Device Type (A) (V) 1.5 150 3 55 NPN KSC3296 Condition Condition hFE •e V ce (V) (A) M IN KSA1304 10 0.5 40 KSA1614 5 0.5 40 240 PNP M AX lc (A) Ib (A) 75 0.5 0.05 VciKsatKV) TYP Condition M AX


    OCR Scan     		PDF T0-220 KSC3296 KSD1406 KSD2012 KSD1273 KSD1944 KSD1408 KSD1362 KSD1588 KSC3158

    D880 voltage regulator

    Abstract: B0244C TIP28C transistor d880 VOLTAGE REGULATOR D880 D880 TRANSISTOR TIP28 A992 transistor E13009 ksd-180
    Text: TRANSISTORS FUNCTION GUIDE 1. SMALL SIGNAL TRANSISTORS 1.1 General Purpose Transistors 1.1.1 SOT-23 Type Transistors Device and Polarity Marking Condition Vet: (V) Ic (A) hpe Condition Vce(sat), VeE(sat)(v) Condition (V) (mA) MAX KST56(2G) KST55(2H) 80 0.5


    OCR Scan     		PDF OT-23 KST06 KST05 BCW71 BCX70G BCX70H BCX70J BCX70K BCX71 BCX71H D880 voltage regulator B0244C TIP28C transistor d880 VOLTAGE REGULATOR D880 D880 TRANSISTOR TIP28 A992 transistor E13009 ksd-180

    TRANSISTOR S 802

    Abstract: KSE800 ic 801
    Text: NPN EPITAXIAL SILICON DARLINGTON TRANSISTOR KS E800/801/803 HIGH DC CU R R EN T GAIN MIN hFE= 750 @ lc= -1.5 and -2.0A DC MONOLITHIC CONSTRUCTION WITH BUILT-IN BASE-EM ITTER RESISTORS Complement to KSE700/701/702/703 A B S O LU T E MAXIMUM RATINGS Characteristic


    OCR Scan     		PDF E800/801/803 KSE700/701/702/703 KSE800/801 KSE802/803 KSE800/801/803 TRANSISTOR S 802 KSE800 ic 801