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onsemi KSB601Y TRANS PNP DARL 100V 5A TO-220-3
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onsemi KSB601YTU TRANS PNP DARL 100V 5A TO-220-3
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Rochester Electronics LLC KSB601YTU TRANS PNP DARL 100V 5A TO-220-3
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DigiKey	KSB601YTU	Tube			579	1 - 10 - 100 - 1000 $0.52 10000 $0.52	Buy Now
onsemi KSB601OTU TRANS PNP DARL 100V 5A TO-220-3
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DigiKey	KSB601OTU	Tube				1 - 10 - 100 - 1000 - 10000 -	Buy Now
onsemi KSB601YTSTU TRANS PNP DARL 100V 5A TO-220-3
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DigiKey	KSB601YTSTU	Tube				1 - 10 - 100 - 1000 - 10000 -	Buy Now

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KSB601 Datasheets (13)

Part	Manufacturer	Description	Datasheet Type	PDF
KSB601	Fairchild Semiconductor	PNP Epitaxial Silicon Darlington Transistor	Original	PDF
KSB601	Fairchild Semiconductor	PNP EPITAXIAL SILICON DARLINGTON TRANSISTOR	Scan	PDF
KSB601	Motorola	Motorola Semiconductor Data & Cross Reference Book	Scan	PDF
KSB601	Unknown	Shortform IC and Component Datasheets (Plus Cross Reference Data)	Short Form	PDF
KSB601	Unknown	Shortform Data and Cross References (Misc Datasheets)	Short Form	PDF
KSB601	Samsung Electronics	PNP Epitaxial Silicon Darlington Transistor	Scan	PDF
KSB601O	Fairchild Semiconductor	TRANS DARLINGTON PNP 100V 5A 3TO-220	Original	PDF
KSB601OTU	Fairchild Semiconductor	PNP Epitaxial Silicon Darlington Transistor	Original	PDF
KSB601R	Fairchild Semiconductor	Low Frequency Power Amplifier	Original	PDF
KSB601Y	Fairchild Semiconductor	Low Frequency Power Amplifier	Original	PDF
KSB601YTSTU	Fairchild Semiconductor	PNP Epitaxial Silicon Darlington Transistor	Original	PDF
KSB601YTU	Fairchild Semiconductor	PNP Epitaxial Silicon Darlington Transistor	Original	PDF
KSB601YTU_NL	Fairchild Semiconductor	PNP Epitaxial Silicon Darlington Transistor	Original	PDF

KSB601 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
Untitled Abstract: No abstract text available Text: KSB601 KSB601 Low Frequency Power Amplifier • Medium Speed Switching Industrial Use • Complement to KSD560 1 1.Base TO-220 2.Collector 3.Emitter PNP Epitaxial Silicon Darlington Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol	Original	KSB601 KSD560 O-220 PW10ms, Cycle50% KSB601wer KSB601	PDF
KSB601 Abstract: KSD560 Text: KSD560 KSD560 Low Frequency Power Amplifier • Low Speed Switching Industrial Use • Complement to KSB601 TO-220 1 1.Base 2.Collector 3.Emitter NPN Epitaxial Silicon Darlington Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO	Original	KSD560 KSB601 O-220 KSB601 KSD560	PDF
Untitled Abstract: No abstract text available Text: KSB601 KSB601 Low Frequency Power Amplifier • Medium Speed Switching Industrial Use • Complement to KSD560 1 TO-220 1.Base 2.Collector 3.Emitter PNP Epitaxial Silicon Darlington Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol	Original	KSB601 KSD560 O-220 PW10ms, Cycle50%	PDF
Untitled Abstract: No abstract text available Text: NPN EPITAXIAL SILICON DARLINGTON TRANSISTOR KSD560 TO-220 LOW FREQUENCY POWER AMPLIFIER LOW SPEED SWITCHING INDUSTRIAL USE • Complement to KSB601 ABSOLUTE MAXIMUM RATINGS Characteristic Symbol Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage	Original	KSD560 O-220 KSB601 Cycle50%	PDF
Untitled Abstract: No abstract text available Text: KSD560 KSD560 Low Frequency Power Amplifier • Low Speed Switching Industrial Use • Complement to KSB601 TO-220 1 1.Base 2.Collector 3.Emitter NPN Epitaxial Silicon Darlington Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO	Original	KSD560 KSB601 O-220	PDF
Untitled Abstract: No abstract text available Text: KSD560 KSD560 Low Frequency Power Amplifier • Low Speed Switching Industrial Use • Complement to KSB601 TO-220 1 1.Base 2.Collector 3.Emitter NPN Epitaxial Silicon Darlington Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO	Original	KSD560 KSB601 O-220 PW10ms, Cycle50% KSD560	PDF
KSB601 Abstract: KSD560 Text: KSB601 KSB601 Low Frequency Power Amplifier • Medium Speed Switching Industrial Use • Complement to KSD560 1 1.Base TO-220 2.Collector 3.Emitter PNP Epitaxial Silicon Darlington Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol	Original	KSB601 KSD560 O-220 KSB601 KSD560	PDF
Untitled Abstract: No abstract text available Text: KSB601 KSB601 Low Frequency Power Amplifier • Medium Speed Switching Industrial Use • Complement to KSD560 1 1.Base TO-220 2.Collector 3.Emitter PNP Epitaxial Silicon Darlington Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol	Original	KSB601 KSD560 O-220	PDF
fjaf6812 Abstract: tip41 darlington fjaf6920 BUT12(A)F KSA1010 transistor bd140-15 bu408 equivalent FJL6920 equivalent fjl6820 FJL6920 Text: Discrete Bipolar Power Transistor – General Purpose Part Number IC A VCEO (V) VCBO (V) VEBO (V) PC (W) hFE VCE (sat) Min Max @ IC (A) Typ (V) Max (V) TO-126 NPN Configuration KSC2682 0.1 180 180 5 8 100 320 0.01 0.12 0.5 KSC3502 0.1 200 200 5 5 40 320	Original	O-126 KSC2682 KSC3502 KSC2258 KSC2258A KSC3503 KSC3953 KSC2688 BD150 KSC5305D fjaf6812 tip41 darlington fjaf6920 BUT12(A)F KSA1010 transistor bd140-15 bu408 equivalent FJL6920 equivalent fjl6820 FJL6920	PDF
BUV48I Abstract: BU808DXI BD699 buv18a BD241CFI transistor 2SA1046 BUW52I BU808DFI equivalent BU724AS 2SA1046 Text: BIPOLAR TRANSISTOR INTRODUCTION TO BIPOLAR CROSS REFERENCE In order to improve our overall service, SGS-THOMSON has introduced a system of preferred transistor sales types. The following cross-reference is intended as a guide to identify sales types that may be suitable	Original	2N3016 2N3021 2N3022 2N3023 2N3024 2N3025 2N3026 2N3055 2N3076 2N3171 BUV48I BU808DXI BD699 buv18a BD241CFI transistor 2SA1046 BUW52I BU808DFI equivalent BU724AS 2SA1046	PDF
2N5657 equivalent Abstract: 2SA1046 BU326 BU108 BU100 2SC2331 Y tip47 419 2N3792 application notes Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N5655 2N5656 2N5657 Plastic NPN Silicon High-Voltage Power Transistor . . . designed for use in line–operated equipment such as audio output amplifiers; low–current, high–voltage converters; and AC line relays.	Original	2N5655 2N5656 2N5657 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B 2N5657 equivalent 2SA1046 BU326 BU108 BU100 2SC2331 Y tip47 419 2N3792 application notes	PDF
MJE494 Abstract: 2SC1419 BD 804 2SD675 MJE104 BD581 BD135 CURVES MJ1000 DTS-4041 2N5037 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BD157 BD158 BD159 Plastic Medium Power NPN Silicon Transistor . . . designed for power output stages for television, radio, phonograph and other consumer product applications. 0.5 AMPERE POWER TRANSISTORS NPN SILICON 250 – 300 – 350 VOLTS	Original	BD157 BD158 BD159 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B MJE494 2SC1419 BD 804 2SD675 MJE104 BD581 BD135 CURVES MJ1000 DTS-4041 2N5037	PDF
2SD669 equivalent Abstract: BD801 BDY29 equivalent BU108 2SC2080 2SD436 2N6021 BD345 tip122 D-PAK package 2SD544 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N6609 See 2N3773 Darlington Silicon Power Transistors 2N6667 2N6668 . . . designed for general–purpose amplifier and low speed switching applications. • High DC Current Gain — hFE = 3500 (Typ) @ IC = 4 Adc • Collector–Emitter Sustaining Voltage — @ 200 mAdc	Original	2N6609 2N3773) 2N6667 2N6668 220AB 2N6387, 2N6388 2SD669 equivalent BD801 BDY29 equivalent BU108 2SC2080 2SD436 2N6021 BD345 tip122 D-PAK package 2SD544	PDF
2SC495 Abstract: NSP41A BU108 transistor BD614 MOTOROLA 2SA663 BD4122 BD661 MJ1000 NSP2100 D45VH4 similar Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJF6107 Power Transistor For Isolated Package Applications PNP SILICON POWER TRANSISTOR 7 AMPERES 70 VOLTS 34 WATTS Designed for general–purpose amplifier and switching applications, where the mounting surface of the device is required to be electrically isolated from the heatsink	Original	MJF6107 2N6107 E69369, TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B 2SC495 NSP41A BU108 transistor BD614 MOTOROLA 2SA663 BD4122 BD661 MJ1000 NSP2100 D45VH4 similar	PDF

Untitled Abstract: No abstract text available Text: NPN EPITAXIAL SILICON DARLINGTON TRANSISTOR KSD560 LOW FREQUENCY POWER AMPLIFIER LOW SPEED SWITCHING INDUSTRIAL USE • Complement to KSB601 ABSOLUTE MAXIMUM RATINGS Characteristic Symbol Rating Unit Collector-Base Voltage VcBO 150 V Collector-Emitter Voltage	OCR Scan	KSD560 KSB601 350/is,	PDF
Untitled Abstract: No abstract text available Text: PNP EPITAXIAL SILICON DARLINGTON TRANSISTOR KSB601 LOW FREQUENCY POWER AMPLIFIER MEDIUM SPEED SWITCHING INDUSTRIAL USE T O -2 2 0 • Complement to KSD560 ABSOLUTE MAXIMUM RATINGS Characteristic Symbol Rating Unit Collector-Base Voltage V cB O -1 0 0 Collector-Emitter Voltage	OCR Scan	KSB601 KSD560 350uS,	PDF
LC2000 Abstract: No abstract text available Text: PNP EPITAXIAL SILICON DARLINGTON TRANSISTOR KSB601 LOW FREQUENCY POWER AMPLIFIER MEDIUM SPEED SWITCHING INDUSTRIAL USE TO-220 • Complement to KSD560 ABSOLUTE MAXIMUM RATINGS Characteristic Symbol Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage	OCR Scan	KSB601 KSD560 O-220 LC2000	PDF
Untitled Abstract: No abstract text available Text: NPN EPITAXIAL SILICO N DARLINGTON T R A N SIST O R KSD560 TO-220 LOW FREQUENCY POWER AMPLIFIER LOW SPEED SWITCHING INDUSTRIAL USE • Complement to KSB601 ABSOLUTE MAXIMUM RATINGS Rating Unit Collector-Base Voltage C haracteristic VcBO Symbol 150 V Collector-Emitter Voltage	OCR Scan	KSD560 O-220 KSB601	PDF
KSB601 Abstract: KSD560 h300f Text: PNP EPITAXIAL SILICON DARLINGTON TRANSISTO R KSB601 LOW FREQUENCY POWER AMPLIFIER MEDIUM SPEED SW ITCHING INDUSTRIAL USE • C o m p le m e n t to K S D 5 6 0 A BSOLUTE M AXIMUM RATINGS R a tin g U n it C o lle c to r-B a s e V o lta g e C h a r a c te r is tic	OCR Scan	KSB601 KSD560 O-220 H300fi KSB601 KSD560 h300f	PDF
EM 316 Abstract: No abstract text available Text: NPN EPITAXIAL SILICON DARLINGTON TRANSISTOR KSD560 LOW FREQUENCY POWER AMPLIFIER LOW SPEED SWITCHING INDUSTRIAL USE TO -220 • Complement to KSB601 ABSOLUTE MAXIMUM RATINGS Characteristic Symbol Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage	OCR Scan	KSD560 KSB601 EM 316	PDF
Untitled Abstract: No abstract text available Text: NPN EPITAXIAL SILICON DARLINGTON TRANSISTOR KSD560 TO-220 LOW FREQUENCY POWER AMPLIFIER LOW SPEED SWITCHING INDUSTRIAL USE • C om plem ent to KSB601 ABSOLUTE MAXIMUM RATINGS R a tin g U n it C ollector-Base Voltage C h a ra c te ris tic VcBO S ym bol 150	OCR Scan	KSD560 O-220 KSB601	PDF
KSD569 Abstract: KSB601 KSB708 KSD560 KSD568 C 3311 transistor Text: ^SAMSUNG S E M I C O N D U C T O R m e I NC d I oaoTboa NPN EPITAXIAL SILICON DARLINGTON TRANSISTOR KSD560 T ~ LOW FREQUENCY POWER AMPLIFIER LOW SPEED SWITCHING INDUSTRIAL USE • Complement to KSB601 ABSOLUTE MAXIMUM RATINGS Ta=25°C Characteristic Symbol	OCR Scan	KSD560 KSB601 -r-55 O-220 T-33-11 KSD569 KSB601 KSB708 KSD560 KSD568 C 3311 transistor	PDF
Untitled Abstract: No abstract text available Text: PNP EPITAXIAL SILICON DARLINGTON TRANSISTOR KSB601 LOW FREQUENCY POWER AMPLIFIER MEDIUM SPEED SWITCHING INDUSTRIAL USE * Complement to KSD560 ABSOLUTE MAXIMUM RATINGS Rating Unit Collector-Base Voltage C haracteristic VcBO Symbol - 100 V Collector-Emitter Voltage	OCR Scan	KSB601 KSD560 25roduct	PDF
Untitled Abstract: No abstract text available Text: PNP EPITAXIAL SILICON DARLINGTON TRANSISTOR KSB601 LOW FREQUENCY POWER AMPLIFIER MEDIUM SPEED SWITCHING INDUSTRIAL USE • Complement to KSD560 ABSOLUTE MAXIMUM RATINGS Rating Unit Collector-Base Voltage Characteristic VcBO Symbol - 100 V Collector-Emitter Voltage	OCR Scan	KSB601 KSD560	PDF

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KSB601 Datasheets (13)

KSB601 Datasheets Context Search

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KSB601

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KSB601

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fjaf6812

BUV48I

2N5657 equivalent

MJE494

2SD669 equivalent

2SC495

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LC2000

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KSB601

EM 316

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KSD569

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