KRX208E
Abstract: No abstract text available
Text: SEMICONDUCTOR KRX208E MARKING SPECIFICATION TES6 PACKAGE 1. Marking method Laser Marking BW 1 3 No. 0 1 2. Marking 2 Item Marking Description Device Mark BW KRX208E hFE Grade - - * Lot No. 01 2006. 1st Week [0:1st Character, 1:2nd Character] Pin No. Dot Pin 1 Index.
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KRX208E
KRX208E
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KRX210E
Abstract: No abstract text available
Text: SEMICONDUCTOR KRX210E MARKING SPECIFICATION TES6 PACKAGE 1. Marking method Laser Marking MN 1 3 No. 0 1 2. Marking 2 Item Marking Description Device Mark MN KRX210E hFE Grade - - * Lot No. 01 2006. 1st Week [0:1st Character, 1:2nd Character] Pin No. Dot Pin 1 Index.
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KRX210E
KRX210E
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KRX204E
Abstract: No abstract text available
Text: SEMICONDUCTOR KRX204E MARKING SPECIFICATION TES6 PACKAGE 1. Marking method Laser Marking BD 1 3 No. 0 1 2. Marking 2 Item Marking Description Device Mark BD KRX204E hFE Grade - - * Lot No. 01 2006. 1st Week [0:1st Character, 1:2nd Character] Pin No. Dot Pin 1 Index.
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KRX204E
KRX204E
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KRX202U
Abstract: No abstract text available
Text: SEMICONDUCTOR KRX202U TECHNICAL DATA EPITAXIAL PLANAR NPN/PNP TRANSISTOR SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. B B1 FEATURES Including two devices in US6. 1 6 2 5 3 4 DIM A A1 B A C With Built-in bias resistors. A1 C Ultra Super mini type with 6 leads.
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KRX202U
KRX202U
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KRX207E
Abstract: MARKING BF
Text: SEMICONDUCTOR KRX207E MARKING SPECIFICATION TES6 PACKAGE 1. Marking method Laser Marking BF 1 3 No. 0 1 2. Marking 2 Item Marking Description Device Mark BF KRX207E hFE Grade - - * Lot No. 01 2006. 1st Week [0:1st Character, 1:2nd Character] Pin No. Dot Pin 1 Index.
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KRX207E
KRX207E
MARKING BF
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KRX209U
Abstract: No abstract text available
Text: SEMICONDUCTOR KRX209U MARKING SPECIFICATION US6 PACKAGE 1. Marking method Laser Marking BM 1 3 No. 0 1 2. Marking 2 Item Marking Description Device Mark BM KRX209U hFE Grade - - * Lot No. 01 2006. 1st Week [0:1st Character, 1:2nd Character] Pin No. Dot Pin 1 Index.
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KRX209U
KRX209U
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bt 2012
Abstract: KRX207U
Text: SEMICONDUCTOR KRX207U MARKING SPECIFICATION US6 PACKAGE 1. Marking method Laser Marking BT 1 3 No. 0 1 2. Marking 2 Item Marking Description Device Mark BT KRX207U hFE Grade - - * Lot No. 01 2006. 1st Week [0:1st Character, 1:2nd Character] Pin No. Dot Pin 1 Index.
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KRX207U
bt 2012
KRX207U
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m krx209e
Abstract: KRX209E
Text: SEMICONDUCTOR KRX209E MARKING SPECIFICATION TES6 PACKAGE 1. Marking method Laser Marking BM 1 3 No. 0 1 2. Marking 2 Item Marking Description Device Mark BM KRX209E hFE Grade - - * Lot No. 01 2006. 1st Week [0:1st Character, 1:2nd Character] Pin No. Dot Pin 1 Index.
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KRX209E
m krx209e
KRX209E
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KRX205U
Abstract: No abstract text available
Text: SEMICONDUCTOR KRX205U MARKING SPECIFICATION US6 PACKAGE 1. Marking method Laser Marking BE 1 3 No. 0 1 2. Marking 2 Item Marking Description Device Mark BE KRX205U hFE Grade - - * Lot No. 01 2006. 1st Week [0:1st Character, 1:2nd Character] Pin No. Dot Pin 1 Index.
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KRX205U
KRX205U
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KRX202E
Abstract: No abstract text available
Text: SEMICONDUCTOR KRX202E TECHNICAL DATA EPITAXIAL PLANAR NPN/PNP TRANSISTOR SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. B B1 FEATURES C A With Built-in bias resistors. 1 6 2 5 3 4 DIM A A1 B B1 C D H J A1 Thin Extreme Super mini type with 6 pin.
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KRX202E
KRX202E
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KRX205E
Abstract: MARKING BE
Text: SEMICONDUCTOR KRX205E MARKING SPECIFICATION TES6 PACKAGE 1. Marking method Laser Marking BE 1 3 No. 0 1 2. Marking 2 Item Marking Description Device Mark BE KRX205E hFE Grade - - * Lot No. 01 2006. 1st Week [0:1st Character, 1:2nd Character] Pin No. Dot Pin 1 Index.
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KRX205E
KRX205E
MARKING BE
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KRX204U
Abstract: No abstract text available
Text: SEMICONDUCTOR KRX204U TECHNICAL DATA EPITAXIAL PLANAR NPN/PNP TRANSISTOR SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. B B1 FEATURES Including two devices in US6. 1 6 2 5 3 4 DIM A A1 B A C With Built-in bias resistors. A1 C Ultra Super mini type with 6 leads.
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KRX204U
KRX204U
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KRX209U
Abstract: No abstract text available
Text: SEMICONDUCTOR KRX209U TECHNICAL DATA EPITAXIAL PLANAR NPN/PNP TRANSISTOR SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. B B1 FEATURES Including two devices in US6. 1 6 2 5 3 4 DIM A A1 B A C With Built-in bias resistors. A1 C Ultra Super mini type with 6 leads.
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KRX209U
KRX209U
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KRX201E
Abstract: No abstract text available
Text: SEMICONDUCTOR KRX201E TECHNICAL DATA EPITAXIAL PLANAR NPN/PNP TRANSISTOR SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. B B1 FEATURES C A ᴌWith Built-in bias resistors. 1 6 2 5 3 4 DIM A A1 B B1 C D H J A1 Thin Extreme Super mini type with 6 pin.
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KRX201E
KRX201E
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Untitled
Abstract: No abstract text available
Text: SEMICONDUCTOR KRX201E TECHNICAL DATA EPITAXIAL PLANAR NPN/PNP TRANSISTOR SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. B B1 FEATURES C A With Built-in bias resistors. 1 6 2 5 3 4 DIM A A1 B B1 C D H J A1 Thin Extreme Super mini type with 6 pin.
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KRX201E
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Untitled
Abstract: No abstract text available
Text: SEMICONDUCTOR KRX204U TECHNICAL DATA EPITAXIAL PLANAR NPN/PNP TRANSISTOR SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. B B1 FEATURES Including two devices in US6. 1 6 2 5 3 4 DIM A A1 B A C With Built-in bias resistors. A1 C Ultra Super mini type with 6 leads.
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KRX204U
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Untitled
Abstract: No abstract text available
Text: SEMICONDUCTOR KRX208U TECHNICAL DATA SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. FEATURES 2008. 11. 20 Revision No : 2 1/3
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KRX208U
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Untitled
Abstract: No abstract text available
Text: SEMICONDUCTOR KRX206U TECHNICAL DATA SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. FEATURES 2008. 11. 20 Revision No : 4 1/3
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KRX206U
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Untitled
Abstract: No abstract text available
Text: SEMICONDUCTOR KRX210E TECHNICAL DATA EPITAXIAL PLANAR NPN/PNP TRANSISTOR SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. B B1 FEATURES C A ・Simplify circuit design. 1 6 2 5 3 4 A1 ・With Built-in bias resistors. C ・Including two devices in TES6.
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KRX210E
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Untitled
Abstract: No abstract text available
Text: SEMICONDUCTOR KRX206E TECHNICAL DATA EPITAXIAL PLANAR NPN/PNP TRANSISTOR SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. B B1 FEATURES C A With Built-in bias resistors. 1 6 2 5 3 4 DIM A A1 B B1 C D H J A1 Thin Extreme Super mini type with 6 Pin.
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KRX206E
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TRANSISTOR BC 6 pnp
Abstract: KRX203E
Text: SEMICONDUCTOR KRX203E TECHNICAL DATA EPITAXIAL PLANAR NPN/PNP TRANSISTOR SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. B B1 FEATURES C A ᴌWith Built-in bias resistors. 1 6 2 5 3 4 DIM A A1 B B1 C D H J A1 Thin Extreme Super mini type with 6 pin.
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KRX203E
TRANSISTOR BC 6 pnp
KRX203E
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KRX201U
Abstract: No abstract text available
Text: SEMICONDUCTOR KRX201U TECHNICAL DATA EPITAXIAL PLANAR NPN/PNP TRANSISTOR SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. B B1 FEATURES Including two devices in US6. DIM A A1 B 1 6 2 5 3 4 A C With Built-in bias resistors. A1 C Ultra Super mini type with 6 leads.
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KRX201U
KRX201U
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KRX204E
Abstract: No abstract text available
Text: SEMICONDUCTOR KRX204E TECHNICAL DATA EPITAXIAL PLANAR NPN/PNP TRANSISTOR SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. B B1 FEATURES C A With Built-in bias resistors. 1 6 2 5 3 4 DIM A A1 B B1 C D H J A1 Thin Extreme Super mini type with 6 pin.
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KRX204E
KRX204E
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KRX207U
Abstract: No abstract text available
Text: SEMICONDUCTOR KRX207U TECHNICAL DATA EPITAXIAL PLANAR NPN/PNP TRANSISTOR SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. B B1 FEATURES Including two devices in US6. 1 6 2 5 3 4 DIM A A1 B A C With Built-in bias resistors. A1 C Ultra Super mini type with 6 leads.
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KRX207U
KRX207U
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