9S12XEP100
Abstract: No abstract text available
Text: Freescale Semiconductor Application Note Document Number:A N4505 Rev. 0, 7/2012 Safety Considerations S12GFamily by: Joachim Krücken AISG MCU Design Munich Contents 1 Introduction 1
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N4505
S12GFamily
9S12XEP100
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APW7141QAITRG
Abstract: SCB-0350M samsung ba92 G546A4P1UF BA92-05996A g546a4 M471B5673EH1-CF8 KSB0705HA AF82801IBM EB88CTGM
Text: - This Document can not be used without Samsung's authorization - Part List : NP-R530-JA05RU Ver. Location 0001 A0010 Part Number 3903-000444 CBF-POWER CORD;DT,EU/KR,CP3,IEC320 C5,25 Part Name & Specification Q'ty SA/SNA 1 SA Parent Part BA99-15303A 0001 B0001
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NP-R530-JA05RU
A0010
B0001
B0003
B0009
B0010
B0100
B0302
B0303
B0402
APW7141QAITRG
SCB-0350M
samsung ba92
G546A4P1UF
BA92-05996A
g546a4
M471B5673EH1-CF8
KSB0705HA
AF82801IBM
EB88CTGM
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K4W1G1646E-HC12
Abstract: BA9-20 BA96-04097A BA39-00813a ltn156 SCB-1700N LTN156A CLAA156WA11A 88E8057 Forcecon
Text: - This Document can not be used without Samsung's authorization - Part List : NP-R522-XS01UA Ver. Location 0001 A0010 Part Number 3903-000444 CBF-POWER CORD;DT,EU/KR,CP3,IEC320 C5,25 Part Name & Specification Q'ty SA/SNA 1 SA NP-R522-XS01UA Parent Part 0001
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NP-R522-XS01UA
A0010
A1001
B0001
B0003
B0009
B0010
B0013
B0100
K4W1G1646E-HC12
BA9-20
BA96-04097A
BA39-00813a
ltn156
SCB-1700N
LTN156A
CLAA156WA11A
88E8057
Forcecon
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Untitled
Abstract: No abstract text available
Text: 0912GN-600 600 Watts - 65 Volts, 128 s, 10% Broadband Data Link 960 - 1215 MHz Preliminary GENERAL DESCRIPTION CASE OUTLINE 55-KR Common Source The 0912GN-600 is an internally matched, COMMON SOURCE, class AB, GaN on SiC HEMT transistor capable of providing over 18dB gain,
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0912GN-600
55-KR
0912GN-600
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Untitled
Abstract: No abstract text available
Text: 03/00 T05 SE 650 KR 001 Rev. 00 RatioplastOptoelectronics GmbH RPopto-Klemme 650nm Sender LED 650nm 50MBit/s 1 Allgemeine Beschreibung _ Die RPopto-Klemme ist speziell geeignet für Anwendungen mit Standard 1mm Kunststofflichtwellenleiter. Bestückt mit einer schnellen 650nm LED die über
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650nm
50MBit/s
100MBit
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Untitled
Abstract: No abstract text available
Text: 2729GN-400 Rev 1 2729GN-400 400 Watts - 65 Volts, 100 s, 10% Radar 2700 - 2900 MHz GENERAL DESCRIPTION CASE OUTLINE 55-KR Common Source The 2729GN-400 is an internally matched, COMMON SOURCE, class AB GaN on SiC HEMT transistor capable of providing over 11dB gain, 400 Watts
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2729GN-400
2729GN-400
55-KR
55-KR
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capacitor 1700uF
Abstract: 50-mVpp IEC60950-1 3700uF 188uF 50MVPP
Text: KR/KRW Series 6 Watt DC/DC Converter Single and Dual Outputs 2:1 and 4:1 Wide Input Voltage Range FEATURES APPLICATIONS ● 6 Watts Output Power ● Measurement ● Output Current up to 1A ● Wireless Network ● High Efficiency up to 83% ● Telecom/Datacom
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ISO9001
2002/95/EC
capacitor 1700uF
50-mVpp
IEC60950-1
3700uF
188uF
50MVPP
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Untitled
Abstract: No abstract text available
Text: Product Brief Cortina Systems CS4323 Octal 10G CDR with Quad EDC and KR Backplane Support Product Description Network bandwidth growth is driving the adoption of 10 Gbps and 40 Gbps backplane interconnects. In addition to the increasing speed and integration of features, support for energy-efficient operation is critical.
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CS4323
10Gbase-KR,
40GBase-KR4,
10/40/100G
10GBase-KR
40Gbase-KR4
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dioda 1n4007
Abstract: diody i tyrystory dioda Silikon TSE6-1A3113100 schemat 1000ap dioda LED zasilacze TSE6-1A3213100 tyrystory
Text: TSE - urz¹dzenie do ³agodnego za³¹czania transformatora, jest przekanikiem elektronicznym z mikroprocesorem kontroluj¹cym warunki za³¹czania transformatora. Jako klucze elektroniczne zastosowane s¹ tu tyrystory mocy. £agodny rozruch transformatora bez udarowego pr¹du rozruchowego jest osi¹gniêty dziêki krótkotrwa³emu przemagnesowaniu rdzenia
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v23084
Abstract: dip RELAY POTTER rx1 1240 V23136 tyco relay V23135 V23134-J V23086-C1 schrack V23148 V23132 v23201
Text: Relay Shortform SELECTION GUIDE Catalogue 1-1773449-3 Issued 01-2008. GENERAL PURPOSE RELAYS - 250VAC SWITCHING KR-E PT MT RM 3 RM 7 RM 6 KHS PT 3 N/O 4 C/O SAFETY RELAYS SR2 SR4 SR6 2 Dimensions are shown for reference purposes only. SPECIAL CONFIG Dimensions are in millimetres
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250VAC
v23084
dip RELAY POTTER
rx1 1240
V23136 tyco relay
V23135
V23134-J
V23086-C1
schrack V23148
V23132
v23201
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Untitled
Abstract: No abstract text available
Text: Preliminary 1011GN-700ELM Rev 2 1011GN-700ELM 700 Watts – 70% Efficiency Mode-S ELM, Avionics 1030 MHz GENERAL DESCRIPTION CASE OUTLINE 55-KR Common Source The 1011GN-700ELM is a common source, class AB, GaN on SiC HEMT power transistor specifically designed for Mode-S ELM Applications. It is
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1011GN-700ELM
1011GN-700ELM
55-KR
55-KR
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Untitled
Abstract: No abstract text available
Text: 1011GN-700ELM 700 Watts – 70% Efficiency Mode-S ELM, Avionics 1030 MHz GENERAL DESCRIPTION CASE OUTLINE 55-KR Common Source The 1011GN-700ELM is a common source, class AB, GaN on SiC HEMT power transistor specifically designed for Mode-S ELM Applications. It is capable of delivering 700 Watts of pulsed peak power
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1011GN-700ELM
55-KR
1011GN-700ELM
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Untitled
Abstract: No abstract text available
Text: To Top / Lineup / Index FUJITSU SEMICONDUCTOR DATA SHEET DS05-11245-1E MEMORY Unbuffered 4 M x 64 BIT HYPER PAGE MODE DRAM DIMM MB8504E064AB-60/-70 Unbuffered, 4 M × 64 Bit Hyper Page Mode DIMM, 3.3 V, 1-bank, 2 KR • DESCRIPTION The Fujitsu MB8504E064AB is a fully decoded, CMOS Dynamic Random Access Memory DRAM module
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DS05-11245-1E
MB8504E064AB-60/-70
MB8504E064AB
MB81V17405A
168-pin
F9709
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Untitled
Abstract: No abstract text available
Text: To Top / Lineup / Index FUJITSU SEMICONDUCTOR DATA SHEET DS05-11243-1E MEMORY Unbuffered 1 M x 64 BIT HYPER PAGE MODE DRAM DIMM MB8501E064AD-60/-70 Unbuffered, 1 M × 64 Bit Hyper Page Mode DIMM, 3.3 V, 1-bank, 4 KR • DESCRIPTION The Fujitsu MB8501E064AD is a fully decoded, CMOS Dynamic Random Access Memory DRAM module
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DS05-11243-1E
MB8501E064AD-60/-70
MB8501E064AD
MB81V16165A
168-pin
F9803
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Untitled
Abstract: No abstract text available
Text: To Top / Lineup / Index FUJITSU SEMICONDUCTOR DATA SHEET DS05-11246-2E MEMORY Unbuffered 4 M x 64 BIT HYPER PAGE MODE DRAM DIMM MB8504E064AC-60/-70 Unbuffered, 4 M × 64 Bit Hyper Page Mode DIMM, 3.3 V, 1-bank, 4 KR • DESCRIPTION The Fujitsu MB8504E064AC is a fully decoded, CMOS Dynamic Random Access Memory DRAM module
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DS05-11246-2E
MB8504E064AC-60/-70
MB8504E064AC
MB81V16405A
168-pin
F9803
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Untitled
Abstract: No abstract text available
Text: To Top / Lineup / Index FUJITSU SEMICONDUCTOR DATA SHEET DS05-11244-1E MEMORY Unbuffered 2 M x 64 BIT HYPER PAGE MODE DRAM DIMM MB8502E064AC-60/-70 Unbuffered, 2 M × 64 Bit Hyper Page Mode DIMM, 3.3 V, 1-bank, 2 KR • DESCRIPTION The Fujitsu MB8502E064AC is a fully decoded, CMOS Dynamic Random Access Memory DRAM module
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DS05-11244-1E
MB8502E064AC-60/-70
MB8502E064AC
MB81V17805A
168-pin
F9803
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SEM-162LAS
Abstract: circuit diagram of LED message display 16X16
Text: 2 0 0 3 . 2 , 14 A K LED DOT MATRIX MODULE MODEL : S IM -1 6 2 L A S A U K CORP. SOZ- 1Z S hinheung-D ong, Iksan, K orea T E L : 063 835-7111 FA X : (063) 335-Z681 URL : http;//w w w .auk,co,kr E -m ail ! webmaster@auk,CQ,kr 2 0 0 3 . 2 . 14 2 0 0 3 . 2 . 14
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SEM-162LAS
96x96x30
16x16)
SEM-162LAS
circuit diagram of LED message display
16X16
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Untitled
Abstract: No abstract text available
Text: 2 0 0 3 . 2 , 14 A K LED DOT MATRIX MODULE MODEL : S IM -1 6 2 L A S A U K CORP. SOZ- 1Z S hinheung-D ong, Iksan, K orea T E L : 063 835-7111 FA X : (063) 335-Z681 URL : http;//w w w .auk,co,kr E -m ail ! webmaster@auk,CQ,kr 2 0 0 3 . 2 . 14 2 0 0 3 . 2 . 14
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335-Z681
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FS70SMJ-03
Abstract: No abstract text available
Text: MITSUBISHI Neh POWER MOSFET FS70SMJ-03 HIGH-SPEED SWITCHING USE OUTLINE DRAWING Dimensions in mm 4.5 15.9MAX f 3.2 £ kr 5.45 0.6 oi 4V DRIVE V d s s . 3 0 V rDS ON (M AX). 12m£2
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FS70SMJ-03
12mi2
571Q-123
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5M280
Abstract: TF5S40ZZ 26M12 24M9S MIL-R-39008 28M28S 473 capacitor
Text: SERIES M and MV SERIES M - SINGLE OUTPUT MILITARY Hi Reliability PICO PAKT NUM KR Ultra-M iniature Isolated DC-DC Converters -55°C + 8 5 C Transformers manufactured to MIL-T-27 TF5S40ZZ • Capacitors MIL-C-39003, S Level MIL-C-55681, S Level • Resistors
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5M12S
5M15S
5M24S
5M28S
12M5S
8V-48V
5M280
TF5S40ZZ
26M12
24M9S
MIL-R-39008
28M28S
473 capacitor
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stanley s3
Abstract: T4121 Series
Text: SSE T> m 4b7fllSfl Ü Q Q 1S 31 b27 • I I S T / STANLEY ELECTRIC CO LTD ROUND SHAPE TYPE LED LAMP f>5/<f>4 KR-5704X/KR5505S/KR4505S SERIES ■ FEATURES • • • • • • • ■ Package Dimension WIDE DIRECTIVITY TYPES ARE SERIALIZED GaAIAs DH CONSTRUCTION HI-SUPER
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KR-5704X/KR5505S/KR4505S
5704X
5505S
4505S
0001S33
T-41-21
stanley s3
T4121 Series
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8X16
Abstract: S7425
Text: 2 0 0 3 . 2 , 14 A 0 K TENTATIVE LED DOT MATRIX MODULE M O D EL : S O M - 240 L A U 3 Colors L D M for outdoor use ^ - ¿ ];S |A ]- AU K CO RP. SOZ- 1Z Shiriheung-D ong, Iksan, K orea T E L : (063) 835-7111 FA X : (063) 835-Z681 URL : http;//w w w .auk,co,kr
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SOM-240
120x240x30
8X16
S7425
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Untitled
Abstract: No abstract text available
Text: MINIATURE ALUMINUM ELECTRO LYTIC C APAC ITO R S KR KT ¡\flH ~C Series • 105*C , 1 0 0 0 hours w ith the rated rip ple cu rre n t applied. • S o lv e n t-p r o o f type 6 .3 to 2 5 0 V o c . S P E C IF IC A T IO N S Specifications Items Operating Temperature
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120Hz)
22X50
25X50
16X40
63X11
10X25
13X25
13X30
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sml series nippon chemi-con
Abstract: 6800 microfarad capacitor 2200 microfarad electrolytic capacitor 50VB10 25x80 22000 microfarad capacitor 5L40 NIPPON CHEMI-CON axial capacitors CVS1000 pvc 412 capacitors
Text: Load Life R = w ith ripple Feature S eries C SH rw i C 4 Kadial 6 3 -4 5 0 2000 0 1 -2 2 .0 0 0 G eneral, m iniaturized Axial 5 KR G eneral, m iniaturized Radial 6 105 KT •G1« Nominal Capacitance Range (x/F) ST CD B i polar o h. 3 (hour) 85 3 Cl «
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2000R
85X360X360
97X360X360
sml series nippon chemi-con
6800 microfarad capacitor
2200 microfarad electrolytic capacitor
50VB10
25x80
22000 microfarad capacitor
5L40
NIPPON CHEMI-CON axial capacitors
CVS1000
pvc 412 capacitors
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