Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    KP-4 200-145 D J Search Results

    KP-4 200-145 D J Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    DBL5W5P543A40LF Amphenol Communications Solutions D-Sub Power Board Mount Connectors, Input Output Connectors, Full Power 5W5 Pin Right Angle Solder 40A, Europe Standard, 500 Cycles, Front: Threaded Insert M3, Back: Without Accessory on PCB. Visit Amphenol Communications Solutions
    DEL2V2P543H40LF Amphenol Communications Solutions D-Sub Power Board Mount Connectors, Input Output Connectors, Full Power 2V2 Pin Right Angle Solder 40A, Europe Standard, 500 Cycles, Front: Threaded Insert M3, Back: Harpoons for 2.4mm PCB Thickness. Visit Amphenol Communications Solutions
    DC8W8P500H30LF Amphenol Communications Solutions D-Sub Power Board Mount Connectors, Input Output Connectors, Full Power 8W8 Pin Right Angle Solder 30A, Europe Standard, 200 Cycles, Front: Without Accessory, Back: Harpoons for 2.4mm PCB Thickness. Visit Amphenol Communications Solutions
    DEV2V2P543H40LF Amphenol Communications Solutions D-Sub Power Board Mount Connectors, Input Output Connectors, Full Power 2V2 Pin Right Angle Solder 40A, Europe Standard, 500 Cycles, Front: Female Screw Lock UNC 4.40, Back: Harpoons for 2.4mm PCB Thickness. Visit Amphenol Communications Solutions
    DEO2V2P543M30LF Amphenol Communications Solutions D-Sub Power Board Mount Connectors, Input Output Connectors, Full Power 2V2 Pin Right Angle Solder 30A, Europe Standard, 500 Cycles, Front: Threaded Insert UNC 4.40, Back: Metal Brackets. Visit Amphenol Communications Solutions

    KP-4 200-145 D J Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    KP-4 200-145 d J

    Abstract: No abstract text available
    Text: TYPE FILM-FOIL CAPACITORS # 5689 KP-4 200-145 d J 33 > 10 48 ø 1.2 35 + 1 20 + 1 Polypropylene dielectric Plastic sleeve / Epoxy resin sealing Paramètre Capacitance Tolérance Rated voltage Rated voltage Repetitive surge current RMS Current Tangente delta


    Original     		faisab5689 KP-4 200-145 d J PDF

    75343P

    Abstract: 75343G 4352 HUF75343G3 HUF75343P3 HUF75343S3S HUF75343S3ST TA75343 TB334 75343S
    Text: HUF75343G3, HUF75343P3, HUF75343S3S Data Sheet June 1999 75A, 55V, 0.009 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,


    Original     		HUF75343G3, HUF75343P3, HUF75343S3S 43oducts 75343P 75343G 4352 HUF75343G3 HUF75343P3 HUF75343S3S HUF75343S3ST TA75343 TB334 75343S PDF

    Untitled

    Abstract: No abstract text available
    Text: HUFA76437P3, HUFA76437S3S TM Data Sheet November 2000 File Number 4984 64A, 60V, 0.017 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs Packaging JEDEC TO-220AB JEDEC TO-263AB SOURCE DRAIN GATE DRAIN FLANGE GATE SOURCE DRAIN (FLANGE) HUFA76437P3 HUFA76437S3S


    Original     		HUFA76437P3, HUFA76437S3S O-220AB O-263AB HUFA76437P3 O-220AB O-263AB 76437P 76437S PDF

    75343p

    Abstract: 75343G fairchild to-220ab 75343P HUF75343G3 75343 HUF75343p3 75343S HUF75343S3S HUF75343S3ST TA75343
    Text: HUF75343G3, HUF75343P3, HUF75343S3S Data Sheet June 1999 75A, 55V, 0.009 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,


    Original     		HUF75343G3, HUF75343P3, HUF75343S3S 75343p 75343G fairchild to-220ab 75343P HUF75343G3 75343 HUF75343p3 75343S HUF75343S3S HUF75343S3ST TA75343 PDF

    TB334

    Abstract: 76437S AN9321 AN9322 HUF76437P3 HUF76437S3S HUF76437S3ST
    Text: HUF76437P3, HUF76437S3S Data Sheet November 1999 File Number 4709.2 64A, 60V, 0.017 Ohm, N-Channel, Logic Level UltraFET Power MOSFET Packaging Features JEDEC TO-220AB JEDEC TO-263AB SOURCE DRAIN GATE DRAIN FLANGE GATE SOURCE DRAIN (FLANGE) HUF76437P3 HUF76437S3S


    Original     		HUF76437P3, HUF76437S3S O-220AB O-263AB HUF76437P3 TB334 76437S AN9321 AN9322 HUF76437P3 HUF76437S3S HUF76437S3ST PDF

    76437S

    Abstract: HUFA76437P3 HUFA76437S3S HUFA76437S3ST TB334 189E1
    Text: HUFA76437P3, HUFA76437S3S Data Sheet November 2000 File Number 4984 64A, 60V, 0.017 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs Packaging JEDEC TO-220AB JEDEC TO-263AB SOURCE DRAIN GATE DRAIN FLANGE GATE SOURCE DRAIN (FLANGE) HUFA76437P3 HUFA76437S3S


    Original     		HUFA76437P3, HUFA76437S3S O-220AB O-263AB HUFA76437P3 76437S HUFA76437P3 HUFA76437S3S HUFA76437S3ST TB334 189E1 PDF

    76437S

    Abstract: HUFA76437P3 HUFA76437S3S HUFA76437S3ST TB334
    Text: HUFA76437P3, HUFA76437S3S Data Sheet December 2001 64A, 60V, 0.017 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs Packaging JEDEC TO-220AB JEDEC TO-263AB SOURCE DRAIN GATE DRAIN FLANGE GATE SOURCE DRAIN (FLANGE) HUFA76437P3 HUFA76437S3S Features • Ultra Low On-Resistance


    Original     		HUFA76437P3, HUFA76437S3S O-220AB O-263AB HUFA76437P3 O-220ABopment. 76437S HUFA76437P3 HUFA76437S3S HUFA76437S3ST TB334 PDF

    76437S

    Abstract: HUF76437P3 HUF76437S3S HUF76437S3ST TB334
    Text: HUF76437P3, HUF76437S3S Data Sheet November 1999 File Number 4709.2 64A, 60V, 0.017 Ohm, N-Channel, Logic Level UltraFET Power MOSFET Title UF7 37P Packaging JEDEC TO-220AB SOURCE DRAIN GATE UF76 7S3 bjec 4A, V, 17 m, JEDEC TO-263AB GATE SOURCE DRAIN FLANGE


    Original     		HUF76437P3, HUF76437S3S O-220AB O-263AB HUF76437P3 76437P 76437S HUF76437P3 HUF76437S3S HUF76437S3ST TB334 PDF

    76437S

    Abstract: HUF76437S3ST AN9321 HUF76437P3 HUF76437S3S TB334
    Text: HUF76437P3, HUF76437S3S Data Sheet December 2001 64A, 60V, 0.017 Ohm, N-Channel, Logic Level UltraFET Power MOSFET Packaging JEDEC TO-220AB JEDEC TO-263AB SOURCE DRAIN GATE DRAIN FLANGE GATE SOURCE DRAIN (FLANGE) HUF76437P3 HUF76437S3S Features • Ultra Low On-Resistance


    Original     		HUF76437P3, HUF76437S3S O-220AB O-263AB HUF76437P3 76opment. 76437S HUF76437S3ST AN9321 HUF76437P3 HUF76437S3S TB334 PDF

    75332p

    Abstract: 75332S 75332 HUF75332P3 75332G huf75332 HUF75332G3 HUF75332S3S HUF75332S3ST TB334
    Text: HUF75332G3, HUF75332P3, HUF75332S3S Data Sheet June 1999 60A, 55V, 0.019 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,


    Original     		HUF75332G3, HUF75332P3, HUF75332S3S 75332p 75332S 75332 HUF75332P3 75332G huf75332 HUF75332G3 HUF75332S3S HUF75332S3ST TB334 PDF

    AN7254

    Abstract: AN9321 AN9322 HUF76423D3 HUF76423D3S HUF76423D3ST TB334
    Text: HUF76423D3, HUF76423D3S Data Sheet October 1999 File Number 4707.2 20A, 60V, 0.037 Ohm, N-Channel, Logic Level UltraFET Power MOSFET Packaging Features JEDEC TO-251AA DRAIN FLANGE JEDEC TO-252AA DRAIN (FLANGE) SOURCE DRAIN GATE GATE SOURCE HUF76423D3S HUF76423D3


    Original     		HUF76423D3, HUF76423D3S O-251AA O-252AA HUF76423D3 AN7254 AN9321 AN9322 HUF76423D3 HUF76423D3S HUF76423D3ST TB334 PDF

    IRF540n

    Abstract: MOSFET IRF540n mosfet 4842 Datasheet IRF540n AN7254 AN7260 AN9321 AN9322 TB334
    Text: IRF540N TM Data Sheet March 2000 File Number 4842 33A, 100V, 0.040 Ohm, N-Channel Power MOSFET Packaging Features JEDEC TO-220AB SOURCE DRAIN GATE DRAIN FLANGE • Ultra Low On-Resistance - rDS(ON) = 0.040Ω, VGS = 10V • Simulation Models - Temperature Compensated PSPICE and SABER


    Original     		IRF540N O-220AB IRF540n MOSFET IRF540n mosfet 4842 Datasheet IRF540n AN7254 AN7260 AN9321 AN9322 TB334 PDF

    AN7254

    Abstract: AN7260 AN9321 AN9322 IRFP140N TB334
    Text: IRFP140N TM Data Sheet March 2000 File Number 4841 33A, 100V, 0.040 Ohm, N-Channel Power MOSFET Packaging Features JEDEC TO-247 SOURCE DRAIN GATE • Ultra Low On-Resistance - rDS ON = 0.040Ω, VGS = 10V • Simulation Models - Temperature Compensated PSPICE and SABER


    Original     		IRFP140N O-247 AN7254 AN7260 AN9321 AN9322 IRFP140N TB334 PDF

    65e9

    Abstract: irfp150n IRFP150N equivalent AN7254 AN7260 AN9321 AN9322 TB334
    Text: IRFP150N TM Data Sheet March 2000 File Number 4844 44A, 100V, 0.030 Ohm, N-Channel Power MOSFET Packaging Features JEDEC TO-247 SOURCE DRAIN GATE • Ultra Low On-Resistance - rDS ON = 0.030Ω, VGS = 10V • Simulation Models - Temperature Compensated PSPICE and SABER


    Original     		IRFP150N O-247 65e9 irfp150n IRFP150N equivalent AN7254 AN7260 AN9321 AN9322 TB334 PDF

    75631S

    Abstract: No abstract text available
    Text: HUFA75631P3, HUFA75631S3ST TM Data Sheet November 2000 File Number 4958 33A, 100V, 0.040 Ohm, N-Channel, UltraFET Power MOSFETs Packaging JEDEC TO-220AB JEDEC TO-263AB SOURCE DRAIN GATE DRAIN FLANGE GATE SOURCE DRAIN (FLANGE) HUFA75631P3 HUFA75631S3ST


    Original     		HUFA75631P3, HUFA75631S3ST O-220AB O-263AB HUFA75631P3 O-220AB 75631P 75631S PDF

    75631P

    Abstract: 75631S AN9321 AN9322 HUF75631P3 HUF75631S3S HUF75631S3ST TB334
    Text: HUF75631P3, HUF75631S3S TM Data Sheet July 2000 33A, 100V, 0.040 Ohm, N-Channel, UltraFET Power MOSFET File Number 4720.2 Packaging JEDEC TO-220AB JEDEC TO-263AB SOURCE DRAIN GATE DRAIN FLANGE GATE SOURCE DRAIN (FLANGE) HUF75631P3 HUF75631S3S Features


    Original     		HUF75631P3, HUF75631S3S O-220AB O-263AB HUF75631P3 75631P 75631P 75631S AN9321 AN9322 HUF75631P3 HUF75631S3S HUF75631S3ST TB334 PDF

    irf540n

    Abstract: MOSFET IRF540n IRF540NT
    Text: IRF540N Data Sheet March 2000 File Number 4842 33A, 100V, 0.040 Ohm, N-Channel Power MOSFET Title F54 bt A, 0V, 40 m, Packaging Features JEDEC TO-220AB SOURCE DRAIN GATE DRAIN FLANGE) • Ultra Low On-Resistance - rDS(ON) = 0.040Ω, VGS = 10V • Simulation Models


    Original     		IRF540N O-220AB IRF540N O-220AB MOSFET IRF540n IRF540NT PDF

    75645p

    Abstract: mosfet 75645p 75645s AN9321 AN9322 HUF75645P3 HUF75645S3S HUF75645S3ST TB334
    Text: HUF75645P3, HUF75645S3S Data Sheet July 1999 File Number 4722.1 75A, 100V, 0.014 Ohm, N-Channel, UltraFET Power MOSFETs Packaging Features JEDEC TO-220AB JEDEC TO-263AB DRAIN FLANGE SOURCE DRAIN GATE GATE SOURCE DRAIN (FLANGE) • Ultra Low On-Resistance


    Original     		HUF75645P3, HUF75645S3S O-220AB O-263AB HUF75645P3 75645P 75645p mosfet 75645p 75645s AN9321 AN9322 HUF75645P3 HUF75645S3S HUF75645S3ST TB334 PDF

    65e9

    Abstract: 75637s TB334 AN9321 AN9322 HUF75637P3 HUF75637S3S HUF75637S3ST 75637P 156E-9
    Text: HUF75637P3, HUF75637S3S Data Sheet October 1999 File Number 4721.1 44A, 100V, 0.030 Ohm, N-Channel, UltraFET Power MOSFET Packaging Features JEDEC TO-220AB JEDEC TO-263AB SOURCE DRAIN GATE DRAIN FLANGE GATE SOURCE DRAIN (FLANGE) • Ultra Low On-Resistance


    Original     		HUF75637P3, HUF75637S3S O-220AB O-263AB HUF75637P3 75637P 65e9 75637s TB334 AN9321 AN9322 HUF75637P3 HUF75637S3S HUF75637S3ST 75637P 156E-9 PDF

    76437s

    Abstract: AN9321 HUF76437P3 HUF76437S3S HUF76437S3ST TB334 n72 m 315E-3
    Text: interrii HUF76437P3, HUF76437S3S November 1999 Data Sheet File Num ber 4709.2 64A, 60V, 0.017 Ohm, N-Channel, Logic Level UltraFET Power MOSFET Packaging Features JED E C TO -220AB JED E C TO -263AB SOURCE • Ultra Low On-Resistance DRAIN • rDS ON = 0 .0 1 4£i,


    OCR Scan     		O-220AB O-263AB HUF76437P3 HUF76437S3S HUF76437P3, 017i2, HUF76437P3 O-220AB 76437P 76437s AN9321 HUF76437S3S HUF76437S3ST TB334 n72 m 315E-3 PDF

    75343p

    Abstract: 75343 75343G 02-E4 TA75343 91E2 27e5 HUF75343P
    Text: HUF75343G3, HUF75343P3, HUF75343S3S Semiconductor June 1999 Data Sheet 75A, 55V, 0.009 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,


    OCR Scan     		HUF75343G3, HUF75343P3, HUF75343S3S 85e-2 76e-3 35e-3 64e-2 48e-1 23e-1 96e-2 75343p 75343 75343G 02-E4 TA75343 91E2 27e5 HUF75343P PDF

    75343P

    Abstract: No abstract text available
    Text: HUF75343G3, HUF75343P3, HUF75343S3S Semiconductor Data Sheet June 1999 75A, 55V, 0.009 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,


    OCR Scan     		HUF75343G3, HUF75343P3, HUF75343S3S 48e-1 23e-1 96e-2 HUF75343 15e-3 50e-2 40e-2 75343P PDF

    MSD 7818

    Abstract: MN9106 information applikation 7490 N TDA 5700 information applikation mikroelektronik udssr hefte 143KT1 Mikroelektronik Information Applikation K 176 LE, K 561 LN
    Text: In n in ik ü r Q fâ lI Information Applikation RGW Typen­ übersicht + Vergleich TeiM UdSSR JitfÆÊL JUUUUUUL&JJJUL i m i n i ^ r ^ c z l c i c b p o n Information Applikation , 9 H E F T 4 9 * R G W T y p e n ü b e r s i c h t + V e r g l e i c h Teil 1


    OCR Scan     		6250b MSD 7818 MN9106 information applikation 7490 N TDA 5700 information applikation mikroelektronik udssr hefte 143KT1 Mikroelektronik Information Applikation K 176 LE, K 561 LN PDF

    LA 47201

    Abstract: 75631P AN9321 AN9322 HUF75631P3 TB334
    Text: HUF75631P3 interdi Data Sheet O cto b e r 1999 F ile N um ber 4720.1 33A, 100V, 0.040 Ohm, N-Channel, UltraFET Power MOSFET Packaging Features JEDEC TQ-220AB • Ultra Low On-Resistance - rDS ON = 0.040£2, VGS = 10V SOURCE • Simulation Models - Temperature Compensated PSPICE and SABER®


    OCR Scan     		HUF75631P3 O-220AB HUF75631P3 O-220AB 75631P 10ements 43D2271 LA 47201 75631P AN9321 AN9322 TB334 PDF