KPA-3010F3C
Abstract: KP-2012F3C
Text: SMD INFRARED EMITTING DIODES KP-1608F3C 0603 Part No. KP-2012F3C(0805) Material λP (nm) Lens Type KP-3216F3C(1206) Po (mW/sr) @20mA Min. Typ. View ing Angle KPA-3010F3C(1104) Dimension 2θ θ1/2 1.6mm x 0.8mm x 1.1mm (0603) KP-1608F3C GaAs 940 water clear
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KP-1608F3C
KP-2012F3C
KP-3216F3C
KPA-3010F3C
KP-1608F3C
KP-1608SF4C
KP-2012F3C
KP-2012SF4C
KP-3216F3C
KP-3216SF4C
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Untitled
Abstract: No abstract text available
Text: SMD INFRARED EMITTING DIODES KP-1608F3C 0603 Part No. KP-2012F3C(0805) Material λD P (nm) Lens Type KP-3216F3C(1206) Po Iv (m mW cd/s)r) View ing @3@ 0m2A 0m *5A 0mA Angle Min. Typ. KPA-3010F3C(1104) Dimension 2θ 1/2 1.6mm x 0.8mm x 1.1mm (0603) KP-1608F3C
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KP-1608F3C
KP-2012F3C
KP-3216F3C
KPA-3010F3C
KP-1608F3C
KP-1608SF4C
KP-2012F3C
KP-2012SF4C
KP-3216F3C
KP-3216SF4C
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KP-1608EC
Abstract: KP-1608SGC KP-1608YC KDA0081 KP-1608
Text: 1.6x0.8mm SMD CHIP LED LAMPS HIGH EFFICIENCY RED KP-1608SGC SUPER BRIGHT GREEN KP-1608YC YELLOW Description Features ! 1.6mmx0.8mm !LOW KP-1608EC SMT LED, 1.1mm THICKNESS. The High Efficiency Red source color devices are POWER CONSUMPTION. made with Gallium Arsenide Phosphide on Gallium
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KP-1608EC
KP-1608SGC
KP-1608YC
2000PCS
KDA0081
SEP/07/2001
KP-1608EC
KP-1608SGC
KP-1608YC
KDA0081
KP-1608
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KP-2012EC
Abstract: KDA0081 KP-2012 KP-2012SGC KP-2012YC smd diode ED
Text: 2.0x1.2mm SMD CHIP LED LAMPS KP-2012EC HIGH EFFICIENCY RED KP-2012SGC SUPER BRIGHT GREEN KP-2012YC YELLOW Features Description !2.0mmx1.2mm SMT LED, 1.1mm THICKNESS. The High Efficiency Red source color devices are !LOW POWER CONSUMPTION. made with Gallium Arsenide Phosphide on Gallium
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KP-2012EC
KP-2012SGC
KP-2012YC
2000PCS
KP-2012EC
KDA0081
SEP/07/2001
KP-2012SGC
KP-2012YC
KDA0081
KP-2012
smd diode ED
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KDA0110
Abstract: KP-3216 KP-3216EC KP-3216SGC KP-3216YC led kp 3216 KP-321
Text: 3.2x1.6mm SMD CHIP LED LAMPS KP-3216EC HIGH EFFICIENCY RED KP-3216SGC SUPER BRIGHT GREEN KP-3216YC YELLOW Features Description !3.2mmx1.6mm SMT LED, 1.1mm THICKNESS. The High Efficiency Red source color devices are !LOW POWER CONSUMPTION. made with Gallium Arsenide Phosphide on Gallium
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KP-3216EC
KP-3216SGC
KP-3216YC
2000PCS
KP-3216EC
KDA0110
SEP/07/2001
KP-3216SGC
KP-3216YC
KDA0110
KP-3216
led kp 3216
KP-321
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Untitled
Abstract: No abstract text available
Text: 1.6x0.8mm SMD CHIP LED LAMPS KP-1608E HIGH EFFICIENCY RED KP-1608SGC SUPER BRIGHT GREEN KP-1608YC YELLOW Features Description !1.6mmx0.8mm SMT LED, 1.1mm THICKNESS. The High Efficiency Red source color devices are !LOW POWER CONSUMPTION. made with Gallium Arsenide Phosphide on Gallium
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KP-1608E
KP-1608SGC
KP-1608YC
2000PCS
millim01
KP-1608EC
KDA0081
SEP/07/2001
KP-1608SGC
KP-1608YC
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kp20a
Abstract: KP100a kp10a kp30a KP100 KP48A kp10 KP80A KP75A KP45A
Text: 5 KP 6.5 . 5 KP 110CA Unidirectional and bidirectional Transient Voltage Suppressor Diodes Unidirektionale und bidirektionale Spannungs-Begrenzer-Dioden Peak pulse power dissipation Impuls-Verlustleistung 5000 W Maximum stand-off voltage Maximale Sperrspannung
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110CA
UL94V-0
kp20a
KP100a
kp10a
kp30a
KP100
KP48A
kp10
KP80A
KP75A
KP45A
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kp20a
Abstract: KP100a KP10A KP30A KP28A KP24A KP36A KP12A KP15A KP36
Text: 5 KP 6.5 . 5 KP 110CA Unidirectional and bidirectional Transient Voltage Suppressor Diodes Unidirektionale und bidirektionale Spannungs-Begrenzer-Dioden Peak pulse power dissipation Impuls-Verlustleistung 5000 W Maximum stand-off voltage Maximale Sperrspannung
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110CA
UL94V-0
kp20a
KP100a
KP10A
KP30A
KP28A
KP24A
KP36A
KP12A
KP15A
KP36
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kp20a
Abstract: kp305 KP11 kp33a KP48A
Text: 5 KP 6.5 . 5 KP 110CA Unidirectional and bidirectional Transient Voltage Suppressor Diodes Unidirektionale und bidirektionale Spannungs-Begrenzer-Dioden Peak pulse power dissipation Impuls-Verlustleistung 5000 W Maximum stand-off voltage Maximale Sperrspannung
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110CA
UL94V-0
kp20a
kp305
KP11
kp33a
KP48A
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Untitled
Abstract: No abstract text available
Text: INFRA-RED EMITTING DIODES KP-2012F3C KP-2012SF4C Features ! WATER CLEAR LENS AVAILABLE. ! 2.0mmx1.2mm ! HIGH Description SMT LED, 1.1mm THICKNESS. F3 Made with Gallium Arsenide Infrared Emitting diodes. SF4 Made with Gallium Aluminum Arsenide Infrared POWER OUTPUT.
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KP-2012F3C
KP-2012SF4C
2000PCS
KDA0430
SEP/21/2001
KP-2012F3C
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KP-1608
Abstract: KP-1608SF4C
Text: 1.6x0.8mm INFRARED EMITTING DIODE Part Number: KP-1608SF4C Features Description z1.6mmX0.8mm SMT LED, 1.1mm THICKNESS. zMECHANICALLY AND SPECTRALLY MATCHED TO SF4 Made with Gallium Aluminum Arsenide Infrared Emitting diodes. KP-1608 PHOTOTRANSISTOR. zWATER CLEAR LENS.
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KP-1608SF4C
KP-1608
2000PCS
DSAD0325
JUL/10/2007
KP-1608SF4C
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Diodes high voltage
Abstract: No abstract text available
Text: INFRA-RED EMITTING DIODES KP-2012F3C KP-2012SF4C Features ! WATER CLEAR LENS AVAILABLE. ! 2.0mmx1.2mm ! HIGH Description SMT LED, 1.1mm THICKNESS. F3 Made with Gallium Arsenide Infrared Emitting diodes. SF4 Made with Gallium Aluminum Arsenide Infrared POWER OUTPUT.
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KP-2012F3C
KP-2012SF4C
KDA0430
SEP/21/2001
KP-2012F3C
Diodes high voltage
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Untitled
Abstract: No abstract text available
Text: INFRA-RED EMITTING DIODES KP-1608F3C KP-1608SF4C Features ! Description WATER CLEAR LENS AVAILABLE. ! 1.6mmx0.8mm ! HIGH F3 Made with Gallium Arsenide Infrared Emitting diodes. SMT LED, 1.1mm THICKNESS. SF4 Made with Gallium Aluminum Arsenide Infrared Emitting
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KP-1608F3C
KP-1608SF4C
KDA0429
SEP/21/2001
KP-1608F3C
KP-1608SF4C
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Untitled
Abstract: No abstract text available
Text: 1.6X0.8mm INFRA-RED EMITTING DIODE KP-1608F3C Features z1.6mmX0.8mm SMT LED, 1.1mm THICKNESS. zMECHANICALLY AND SPECTRALLY MATCHED TO Description F3 Made with Gallium Arsenide Infrared Emitting diodes. KP-1608 PHOTOTRANSISTOR. zWATER CLEAR LENS. zPACKAGE: 2000PCS / REEL.
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KP-1608F3C
KP-1608
2000PCS
DSAB7146
OCT/18/2005
KP-1608F3C
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Untitled
Abstract: No abstract text available
Text: 1.6X0.8mm INFRA-RED EMITTING DIODE KP-1608F3C Features Description 1.6mmX0.8mm SMT LED, 1.1mm THICKNESS. MECHANICALLY AND SPECTRALLY MATCHED TO F3 Made with Gallium Arsenide Infrared Emitting diodes. KP-1608 PHOTOTRANSISTOR. WATER CLEAR LENS. PACKAGE: 2000PCS / REEL.
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KP-1608F3C
KP-1608
2000PCS
DSAB7146
MAR/20/2005
KP-1608F3C
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Untitled
Abstract: No abstract text available
Text: INFRA-RED EMITTING DIODES KP-3216F3C KP-3216SF4C Features ! WATER CLEAR LENS AVAILABLE. ! 3.2mmx1.6mm ! HIGH Description SMT LED, 1.1mm THICKNESS. F3 Made with Gallium Arsenide Infrared Emitting diodes. SF4 Made with Gallium Aluminum Arsenide Infrared POWER OUTPUT.
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KP-3216F3C
KP-3216SF4C
KDA0431
SEP/21/2001
KP-3216F3C
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KP-3216SF4C
Abstract: KDA0431 KP-3216F3C
Text: INFRA-RED EMITTING DIODES KP-3216F3C KP-3216SF4C Features ! WATER CLEAR LENS AVAILABLE. ! 3.2mmx1.6mm ! HIGH Description SMT LED, 1.1mm THICKNESS. F3 Made with Gallium Arsenide Infrared Emitting diodes. SF4 Made with Gallium Aluminum Arsenide Infrared POWER OUTPUT.
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KP-3216F3C
KP-3216SF4C
2000PCS/REEL.
KDA0431
SEP/21/2001
KP-3216SF4C
KDA0431
KP-3216F3C
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GP 023 DIODE
Abstract: kp 103 power transistor array M63824GP M63824KP
Text: MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> M63824GP/KP 7-UNIT 500mA DARLINGTON TRANSISTOR-ARRAY WITH CLAMP DIODE DESCRIPTION The M63824GP/KP 7-channel sinkdriver, consists of 14 NPN transistors connected to from seven high current gain driver pairs. PIN CONFIGURATION
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M63824GP/KP
500mA
M63824GP/KP
500mA)
GP 023 DIODE
kp 103
power transistor array
M63824GP
M63824KP
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Untitled
Abstract: No abstract text available
Text: 1.6x0.8mm INFRA-RED EMITTING DIODE KP-1608SF4C Features Description 1.6mmX0.8mm SMT LED, 1.1mm THICKNESS. MECHANICALLY AND SPECTRALLY MATCHED TO SF4 Made with Gallium Aluminum Arsenide Infrared Emitting diodes. KP-1608 PHOTOTRANSISTOR. W ATER CLEAR LENS. PACKAGE: 2000PCS / REEL .
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KP-1608SF4C
KP-1608
2000PCS
DSAD0325
MAR/20/2005
KP-1608SF4C
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18P4G
Abstract: 20P2N-A M63815FP M63815KP M63815P 20P2N
Text: POWEREX MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> M63815P/FP/KP 8-UNIT 300mA TRANSISTOR ARRAY WITH CLAMP DIODE DESCRIPTION M63815P/FP/KP are eight-circuit Single transistor arrays with clamping diodes. The circuits are made of NPN transistors. Both the semiconductor integrated circuits perform
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M63815P/FP/KP
300mA
M63815P/FP/KP
300mA)
18P4G
20P2N-A
M63815FP
M63815KP
M63815P
20P2N
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M63816FP
Abstract: M63816KP M63816P 18P4G 20P2N-A
Text: POWEREX MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> M63816P/FP/KP 8-UNIT 300mA TRANSISTOR ARRAY WITH CLAMP DIODE DESCRIPTION M63816P/FP/KP are eight-circuit Single transistor arrays with clamping diodes. The circuits are made of NPN transistors. Both the semiconductor integrated circuits perform
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M63816P/FP/KP
300mA
M63816P/FP/KP
300mA)
M63816FP
M63816KP
M63816P
18P4G
20P2N-A
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Untitled
Abstract: No abstract text available
Text: INFRA-RED EMITTING DIODES KP-3216F3C KP-3216F3BT KP-3216SF4C KP-3216SF4BT Features Package Dimensions i BOTH WATER CLEAR LENS AND BLUE TRANSPARENT LENS AVAILABLE, POLARITY MARK i 3.2mmx1,6mm SMTLED. 1.1mm THICKNESS, i HIGH POWER OUTPUT. Description F3 Made with Gallium Arsenide Infrared Emitting diodes.
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KP-3216F3C
KP-3216SF4C
KP-3216F3BT
KP-3216SF4BT
KP-3216SF4BT
KP-3216SF4C/
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4-KP20F-2
Abstract: KP-2012F3C MARK 2CR kp 40 12
Text: INFRA-RED EMITTING DIODES KP-2012F3C KP-2012F3BT KP-2012SF4C KP-2012SF4BT Features Package Dimensions i BOTH WATER CLEAR LENS AND BLUE TRANSPARENT LENS AVAILABLE, i 2.0mmx1,2mm SMTLED. 1.1 mm THICKNESS, 0 .1 3 .0 0 5 j POLARITY MARK i HIGH POWER OUTPUT. im
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KP-2012F3C
KP-2012SF4C
KP-2012F3BT
KP-2012SF4BT
KP-201D
4-KP20F-3
4-KP20F-2
MARK 2CR
kp 40 12
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KP-1608SF4BT
Abstract: kp 40 12 kp1608f3c
Text: INFRA-RED EMITTING DIODES KP-1608F3C KP-1608F3BT KP-1608SF4C KP-1608SF4BT Features Package Dimensions i BOTH W A T E R CLEAR LENS A ND BLUE TR A N S P A R E N T LENS AVAILABLE, i 1 .6mmx0.8mm S M T LED. 1.1mm TH IC K N ES S, 0.25 .01 i HIGH PO W ER OUTPUT.
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KP-1608F3C
KP-1608SF4C
KP-1608F3BT
KP-1608SF4BT
4-KP16F-3
KP-1608SF4BT
kp 40 12
kp1608f3c
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