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    KP DIOD Search Results

    KP DIOD Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    KP DIOD Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    KPA-3010F3C

    Abstract: KP-2012F3C
    Text: SMD INFRARED EMITTING DIODES KP-1608F3C 0603 Part No. KP-2012F3C(0805) Material λP (nm) Lens Type KP-3216F3C(1206) Po (mW/sr) @20mA Min. Typ. View ing Angle KPA-3010F3C(1104) Dimension 2θ θ1/2 1.6mm x 0.8mm x 1.1mm (0603) KP-1608F3C GaAs 940 water clear


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    KP-1608F3C KP-2012F3C KP-3216F3C KPA-3010F3C KP-1608F3C KP-1608SF4C KP-2012F3C KP-2012SF4C KP-3216F3C KP-3216SF4C PDF

    Untitled

    Abstract: No abstract text available
    Text: SMD INFRARED EMITTING DIODES KP-1608F3C 0603 Part No. KP-2012F3C(0805) Material λD P (nm) Lens Type KP-3216F3C(1206) Po Iv (m mW cd/s)r) View ing @3@ 0m2A 0m *5A 0mA Angle Min. Typ. KPA-3010F3C(1104) Dimension 2θ 1/2 1.6mm x 0.8mm x 1.1mm (0603) KP-1608F3C


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    KP-1608F3C KP-2012F3C KP-3216F3C KPA-3010F3C KP-1608F3C KP-1608SF4C KP-2012F3C KP-2012SF4C KP-3216F3C KP-3216SF4C PDF

    KP-1608EC

    Abstract: KP-1608SGC KP-1608YC KDA0081 KP-1608
    Text: 1.6x0.8mm SMD CHIP LED LAMPS HIGH EFFICIENCY RED KP-1608SGC SUPER BRIGHT GREEN KP-1608YC YELLOW Description Features ! 1.6mmx0.8mm !LOW KP-1608EC SMT LED, 1.1mm THICKNESS. The High Efficiency Red source color devices are POWER CONSUMPTION. made with Gallium Arsenide Phosphide on Gallium


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    KP-1608EC KP-1608SGC KP-1608YC 2000PCS KDA0081 SEP/07/2001 KP-1608EC KP-1608SGC KP-1608YC KDA0081 KP-1608 PDF

    KP-2012EC

    Abstract: KDA0081 KP-2012 KP-2012SGC KP-2012YC smd diode ED
    Text: 2.0x1.2mm SMD CHIP LED LAMPS KP-2012EC HIGH EFFICIENCY RED KP-2012SGC SUPER BRIGHT GREEN KP-2012YC YELLOW Features Description !2.0mmx1.2mm SMT LED, 1.1mm THICKNESS. The High Efficiency Red source color devices are !LOW POWER CONSUMPTION. made with Gallium Arsenide Phosphide on Gallium


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    KP-2012EC KP-2012SGC KP-2012YC 2000PCS KP-2012EC KDA0081 SEP/07/2001 KP-2012SGC KP-2012YC KDA0081 KP-2012 smd diode ED PDF

    KDA0110

    Abstract: KP-3216 KP-3216EC KP-3216SGC KP-3216YC led kp 3216 KP-321
    Text: 3.2x1.6mm SMD CHIP LED LAMPS KP-3216EC HIGH EFFICIENCY RED KP-3216SGC SUPER BRIGHT GREEN KP-3216YC YELLOW Features Description !3.2mmx1.6mm SMT LED, 1.1mm THICKNESS. The High Efficiency Red source color devices are !LOW POWER CONSUMPTION. made with Gallium Arsenide Phosphide on Gallium


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    KP-3216EC KP-3216SGC KP-3216YC 2000PCS KP-3216EC KDA0110 SEP/07/2001 KP-3216SGC KP-3216YC KDA0110 KP-3216 led kp 3216 KP-321 PDF

    Untitled

    Abstract: No abstract text available
    Text: 1.6x0.8mm SMD CHIP LED LAMPS KP-1608E HIGH EFFICIENCY RED KP-1608SGC SUPER BRIGHT GREEN KP-1608YC YELLOW Features Description !1.6mmx0.8mm SMT LED, 1.1mm THICKNESS. The High Efficiency Red source color devices are !LOW POWER CONSUMPTION. made with Gallium Arsenide Phosphide on Gallium


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    KP-1608E KP-1608SGC KP-1608YC 2000PCS millim01 KP-1608EC KDA0081 SEP/07/2001 KP-1608SGC KP-1608YC PDF

    kp20a

    Abstract: KP100a kp10a kp30a KP100 KP48A kp10 KP80A KP75A KP45A
    Text: 5 KP 6.5 . 5 KP 110CA Unidirectional and bidirectional Transient Voltage Suppressor Diodes Unidirektionale und bidirektionale Spannungs-Begrenzer-Dioden Peak pulse power dissipation Impuls-Verlustleistung 5000 W Maximum stand-off voltage Maximale Sperrspannung


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    110CA UL94V-0 kp20a KP100a kp10a kp30a KP100 KP48A kp10 KP80A KP75A KP45A PDF

    kp20a

    Abstract: KP100a KP10A KP30A KP28A KP24A KP36A KP12A KP15A KP36
    Text: 5 KP 6.5 . 5 KP 110CA Unidirectional and bidirectional Transient Voltage Suppressor Diodes Unidirektionale und bidirektionale Spannungs-Begrenzer-Dioden Peak pulse power dissipation Impuls-Verlustleistung 5000 W Maximum stand-off voltage Maximale Sperrspannung


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    110CA UL94V-0 kp20a KP100a KP10A KP30A KP28A KP24A KP36A KP12A KP15A KP36 PDF

    kp20a

    Abstract: kp305 KP11 kp33a KP48A
    Text: 5 KP 6.5 . 5 KP 110CA Unidirectional and bidirectional Transient Voltage Suppressor Diodes Unidirektionale und bidirektionale Spannungs-Begrenzer-Dioden Peak pulse power dissipation Impuls-Verlustleistung 5000 W Maximum stand-off voltage Maximale Sperrspannung


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    110CA UL94V-0 kp20a kp305 KP11 kp33a KP48A PDF

    Untitled

    Abstract: No abstract text available
    Text: INFRA-RED EMITTING DIODES KP-2012F3C KP-2012SF4C Features ! WATER CLEAR LENS AVAILABLE. ! 2.0mmx1.2mm ! HIGH Description SMT LED, 1.1mm THICKNESS. F3 Made with Gallium Arsenide Infrared Emitting diodes. SF4 Made with Gallium Aluminum Arsenide Infrared POWER OUTPUT.


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    KP-2012F3C KP-2012SF4C 2000PCS KDA0430 SEP/21/2001 KP-2012F3C PDF

    KP-1608

    Abstract: KP-1608SF4C
    Text: 1.6x0.8mm INFRARED EMITTING DIODE Part Number: KP-1608SF4C Features Description z1.6mmX0.8mm SMT LED, 1.1mm THICKNESS. zMECHANICALLY AND SPECTRALLY MATCHED TO SF4 Made with Gallium Aluminum Arsenide Infrared Emitting diodes. KP-1608 PHOTOTRANSISTOR. zWATER CLEAR LENS.


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    KP-1608SF4C KP-1608 2000PCS DSAD0325 JUL/10/2007 KP-1608SF4C PDF

    Diodes high voltage

    Abstract: No abstract text available
    Text: INFRA-RED EMITTING DIODES KP-2012F3C KP-2012SF4C Features ! WATER CLEAR LENS AVAILABLE. ! 2.0mmx1.2mm ! HIGH Description SMT LED, 1.1mm THICKNESS. F3 Made with Gallium Arsenide Infrared Emitting diodes. SF4 Made with Gallium Aluminum Arsenide Infrared POWER OUTPUT.


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    KP-2012F3C KP-2012SF4C KDA0430 SEP/21/2001 KP-2012F3C Diodes high voltage PDF

    Untitled

    Abstract: No abstract text available
    Text: INFRA-RED EMITTING DIODES KP-1608F3C KP-1608SF4C Features ! Description WATER CLEAR LENS AVAILABLE. ! 1.6mmx0.8mm ! HIGH F3 Made with Gallium Arsenide Infrared Emitting diodes. SMT LED, 1.1mm THICKNESS. SF4 Made with Gallium Aluminum Arsenide Infrared Emitting


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    KP-1608F3C KP-1608SF4C KDA0429 SEP/21/2001 KP-1608F3C KP-1608SF4C PDF

    Untitled

    Abstract: No abstract text available
    Text: 1.6X0.8mm INFRA-RED EMITTING DIODE KP-1608F3C Features z1.6mmX0.8mm SMT LED, 1.1mm THICKNESS. zMECHANICALLY AND SPECTRALLY MATCHED TO Description F3 Made with Gallium Arsenide Infrared Emitting diodes. KP-1608 PHOTOTRANSISTOR. zWATER CLEAR LENS. zPACKAGE: 2000PCS / REEL.


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    KP-1608F3C KP-1608 2000PCS DSAB7146 OCT/18/2005 KP-1608F3C PDF

    Untitled

    Abstract: No abstract text available
    Text: 1.6X0.8mm INFRA-RED EMITTING DIODE KP-1608F3C Features Description 1.6mmX0.8mm SMT LED, 1.1mm THICKNESS. MECHANICALLY AND SPECTRALLY MATCHED TO F3 Made with Gallium Arsenide Infrared Emitting diodes. KP-1608 PHOTOTRANSISTOR. WATER CLEAR LENS. PACKAGE: 2000PCS / REEL.


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    KP-1608F3C KP-1608 2000PCS DSAB7146 MAR/20/2005 KP-1608F3C PDF

    Untitled

    Abstract: No abstract text available
    Text: INFRA-RED EMITTING DIODES KP-3216F3C KP-3216SF4C Features ! WATER CLEAR LENS AVAILABLE. ! 3.2mmx1.6mm ! HIGH Description SMT LED, 1.1mm THICKNESS. F3 Made with Gallium Arsenide Infrared Emitting diodes. SF4 Made with Gallium Aluminum Arsenide Infrared POWER OUTPUT.


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    KP-3216F3C KP-3216SF4C KDA0431 SEP/21/2001 KP-3216F3C PDF

    KP-3216SF4C

    Abstract: KDA0431 KP-3216F3C
    Text: INFRA-RED EMITTING DIODES KP-3216F3C KP-3216SF4C Features ! WATER CLEAR LENS AVAILABLE. ! 3.2mmx1.6mm ! HIGH Description SMT LED, 1.1mm THICKNESS. F3 Made with Gallium Arsenide Infrared Emitting diodes. SF4 Made with Gallium Aluminum Arsenide Infrared POWER OUTPUT.


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    KP-3216F3C KP-3216SF4C 2000PCS/REEL. KDA0431 SEP/21/2001 KP-3216SF4C KDA0431 KP-3216F3C PDF

    GP 023 DIODE

    Abstract: kp 103 power transistor array M63824GP M63824KP
    Text: MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> M63824GP/KP 7-UNIT 500mA DARLINGTON TRANSISTOR-ARRAY WITH CLAMP DIODE DESCRIPTION The M63824GP/KP 7-channel sinkdriver, consists of 14 NPN transistors connected to from seven high current gain driver pairs. PIN CONFIGURATION


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    M63824GP/KP 500mA M63824GP/KP 500mA) GP 023 DIODE kp 103 power transistor array M63824GP M63824KP PDF

    Untitled

    Abstract: No abstract text available
    Text: 1.6x0.8mm INFRA-RED EMITTING DIODE KP-1608SF4C Features Description 1.6mmX0.8mm SMT LED, 1.1mm THICKNESS. MECHANICALLY AND SPECTRALLY MATCHED TO SF4 Made with Gallium Aluminum Arsenide Infrared Emitting diodes. KP-1608 PHOTOTRANSISTOR. W ATER CLEAR LENS. PACKAGE: 2000PCS / REEL .


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    KP-1608SF4C KP-1608 2000PCS DSAD0325 MAR/20/2005 KP-1608SF4C PDF

    18P4G

    Abstract: 20P2N-A M63815FP M63815KP M63815P 20P2N
    Text: POWEREX MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> M63815P/FP/KP 8-UNIT 300mA TRANSISTOR ARRAY WITH CLAMP DIODE DESCRIPTION M63815P/FP/KP are eight-circuit Single transistor arrays with clamping diodes. The circuits are made of NPN transistors. Both the semiconductor integrated circuits perform


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    M63815P/FP/KP 300mA M63815P/FP/KP 300mA) 18P4G 20P2N-A M63815FP M63815KP M63815P 20P2N PDF

    M63816FP

    Abstract: M63816KP M63816P 18P4G 20P2N-A
    Text: POWEREX MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> M63816P/FP/KP 8-UNIT 300mA TRANSISTOR ARRAY WITH CLAMP DIODE DESCRIPTION M63816P/FP/KP are eight-circuit Single transistor arrays with clamping diodes. The circuits are made of NPN transistors. Both the semiconductor integrated circuits perform


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    M63816P/FP/KP 300mA M63816P/FP/KP 300mA) M63816FP M63816KP M63816P 18P4G 20P2N-A PDF

    Untitled

    Abstract: No abstract text available
    Text: INFRA-RED EMITTING DIODES KP-3216F3C KP-3216F3BT KP-3216SF4C KP-3216SF4BT Features Package Dimensions i BOTH WATER CLEAR LENS AND BLUE TRANSPARENT LENS AVAILABLE, POLARITY MARK i 3.2mmx1,6mm SMTLED. 1.1mm THICKNESS, i HIGH POWER OUTPUT. Description F3 Made with Gallium Arsenide Infrared Emitting diodes.


    OCR Scan
    KP-3216F3C KP-3216SF4C KP-3216F3BT KP-3216SF4BT KP-3216SF4BT KP-3216SF4C/ PDF

    4-KP20F-2

    Abstract: KP-2012F3C MARK 2CR kp 40 12
    Text: INFRA-RED EMITTING DIODES KP-2012F3C KP-2012F3BT KP-2012SF4C KP-2012SF4BT Features Package Dimensions i BOTH WATER CLEAR LENS AND BLUE TRANSPARENT LENS AVAILABLE, i 2.0mmx1,2mm SMTLED. 1.1 mm THICKNESS, 0 .1 3 .0 0 5 j POLARITY MARK i HIGH POWER OUTPUT. im


    OCR Scan
    KP-2012F3C KP-2012SF4C KP-2012F3BT KP-2012SF4BT KP-201D 4-KP20F-3 4-KP20F-2 MARK 2CR kp 40 12 PDF

    KP-1608SF4BT

    Abstract: kp 40 12 kp1608f3c
    Text: INFRA-RED EMITTING DIODES KP-1608F3C KP-1608F3BT KP-1608SF4C KP-1608SF4BT Features Package Dimensions i BOTH W A T E R CLEAR LENS A ND BLUE TR A N S P A R E N T LENS AVAILABLE, i 1 .6mmx0.8mm S M T LED. 1.1mm TH IC K N ES S, 0.25 .01 i HIGH PO W ER OUTPUT.


    OCR Scan
    KP-1608F3C KP-1608SF4C KP-1608F3BT KP-1608SF4BT 4-KP16F-3 KP-1608SF4BT kp 40 12 kp1608f3c PDF