KMM366S824BT-G8
Abstract: KMM366S824BT-GH KMM366S824BT-GL
Text: KMM366S824BT PC100 SDRAM MODULE Revision History Revision .0 February 1998 - Input leakage Currents (Inputs / DQ) of Component level are changed. IIL(Inputs) : ± 5uA to ± 1uA, IIL(DQ) : ± 5uA to ± 1.5uA. - Cin to be measured at VDD = 3.3V, TA = 23°C, f = 1MHz, VREF =1.4V ± 200 mV.
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KMM366S824BT
PC100
100MHz
100MHz
KMM366S824BT-G8
KMM366S824BT-GH
KMM366S824BT-GL
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KM416S4030BT-G10
Abstract: KMM366S824BTL-G0
Text: KMM366S824BTL PC66 SDRAM MODULE Revision History Revision .3 March 1998 •Some Parameter values & Characteristics of comp. level are changed as below : - Input leakage currents (Inputs) : ±5uA to ±1uA. - Input leakage currents (I/O) : ±5uA to ±1.5uA.
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KMM366S824BTL
200mV.
66MHz
KM416S4030BT-G10
KMM366S824BTL-G0
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Untitled
Abstract: No abstract text available
Text: KMM366S824BTL PC66 SDRAM MODULE Revision History Revision .3 March 1998 •S o m e P a ra m e te r v a lu e s & C h a ra cte ristics o f com p , level are c h a n g e d as be lo w : - Input le aka ge cu rre n ts (Inputs) :± 5 u A to ± 1 u A . - Input le aka ge cu rre n ts (I/O) :± 5 u A to ± 1 ,5uA.
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KMM366S824BTL
416S4030BT
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Untitled
Abstract: No abstract text available
Text: KMM366S824BT PC100 SDRAM MODULE KMM366S824BT SDRAM DIMM 8Mx64 SDRAM DIMM based on 4Mx16, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung KMM366S824BT is a 8M bit x 64 Synchronous Dynamic RAM high density memory module. The Samsung
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KMM366S824BT
KMM366S824BT
PC100
8Mx64
4Mx16,
400mil
168-pin
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Untitled
Abstract: No abstract text available
Text: Preliminary PC 100 SDRAM MODULE KMM366S824BT KMM366S824BT SDRAM DIMM 8Mx64 SDRAM DIMM based on 4Mx16, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Sam sung KM M 366S 824B T is a 8M bit x 64 Synchronous : Perform ance range
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KMM366S824BT
KMM366S824BT
8Mx64
4Mx16,
400mil
168-pin
416S4030BT
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Untitled
Abstract: No abstract text available
Text: KMM366S824BT PC100 SDRAM MODULE Revision History Revision .0 February 1998 - Input leakage Currents (Inputs / DQ) of Com ponent level are changed. I n(lnputs) : ± 5uA to ± 1 uA, I il (DQ) : ± 5uA to ± 1.5uA. - Cin to be measured at V dd = 3.3V, T a = 23°C , f = 1 MHz, V
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OCR Scan
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PDF
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KMM366S824BT
PC100
4Mx16
KM416S4030BT
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Untitled
Abstract: No abstract text available
Text: KMM366S824BTL PC66 SDR AM M O D U L E Revision History Revision .3 March 1998 •Some Parameter values & Characteristics of comp, level are changed as below : - input leakage currents (Inputs) : ±5uA to ± 1uA. -Input leakage currents (I/O) : ±5uA to ±1.5uA.
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OCR Scan
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PDF
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KMM366S824BTL
200mV.
150Max
S4030BT
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Untitled
Abstract: No abstract text available
Text: KMM366S824BTL PC66 SDRAM MODULE KMM366S824BTL SDRAM DIMM 8Mx64 SDRAM DIMM based on 4Mx16,4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung KMM366S824BTL is a 8 M bit x 64 Synchronous Dynamic RAM high density memory module. The Samsung
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OCR Scan
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PDF
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KMM366S824BTL
KMM366S824BTL
8Mx64
4Mx16
400mil
168-pin
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KMM366S424BTL-G0
Abstract: KMM466S824BT2F0 KMM466S424BT-F0 KMM466S824BT2-F0 4MX16 16MX8 KM44S4020CT KM48S2020CT
Text: TABLE OF CONTENTS | I. General Information A. Product Guide Component B. Product Guide (Module) C. Ordering information II. Component Specifications A. 16M SDRAM (C-die) - Datasheets • KM44S4020CT • 4Mx4 with 2Banks 25 • KM48S2020CT .
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KM44S4020CT
KM48S2020CT
KM416S1020CT
KM416S1021CT
1Mx16
KM44S16020BT
KM48S8020BT
KM416S4020BT
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4Mx64
KMM366S424BTL-G0
KMM466S824BT2F0
KMM466S424BT-F0
KMM466S824BT2-F0
4MX16
16MX8
KM44S4020CT
KM48S2020CT
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