C4125
Abstract: single gate "Shottky" Schottky Diode 40V 6A
Text: SEMICONDUCTOR KMB6D0NS30QA TECHNICAL DATA N-Ch MOSFET+SBD GENERAL DESCRIPTION This trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. The MOSFET and Schottky diode are isolated inside the
|
Original
|
PDF
|
KMB6D0NS30QA
100ms
100us
Fig10.
C4125
single gate "Shottky"
Schottky Diode 40V 6A
|
Untitled
Abstract: No abstract text available
Text: SEMICONDUCTOR KMB6D0NS30QA TECHNICAL DATA N-Ch MOSFET+SBD GENERAL DESCRIPTION This trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. The MOSFET and Schottky diode are isolated inside the
|
Original
|
PDF
|
KMB6D0NS30QA
|
DS24V
Abstract: No abstract text available
Text: SEM ICONDUCTOR KMB6D0NS30QA TECHNI CAL DATA N-Ch M O SF E T +SB D G E N E R A L D E S C R IP T IO N This trench MOSFET has better characteristics, such as fast switching tim e, low on re sista n c e , low g ate c h arg e and e x c e lle n t a v a la n ch e
|
OCR Scan
|
PDF
|
KMB6D0NS30QA
20NS30QA
S30QA
DS24V
|