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    Samsung Semiconductor KM736V889T-10T

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    Samsung Semiconductor KM736V889T-72

    256K X 36 CACHE SRAM, 3.8 NS, PQFP100
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    Quest Components KM736V889T-72 1,002
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    KM736V889 Datasheets (5)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    KM736V889-10 Samsung Electronics Synchronous Pipelined Burst SRAM Original PDF
    KM736V889-50 Samsung Electronics Synchronous Pipelined Burst SRAM Original PDF
    KM736V889-60 Samsung Electronics Synchronous Pipelined Burst SRAM Original PDF
    KM736V889-67 Samsung Electronics Synchronous Pipelined Burst SRAM Original PDF
    KM736V889-72 Samsung Electronics Synchronous Pipelined Burst SRAM Original PDF

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    Untitled

    Abstract: No abstract text available
    Text: KM736V889 KM718V989 256Kx36 & 512Kx18 Synchronous SRAM Document Title 256Kx36 & 512Kx18-Bit Synchronous Pipelined Burst SRAM Revision History Rev. No. History Draft Date Remark 0.0 Initial draft April. 10 . 1998 Preliminary 0.1 Modify DC characteristics Input Leakage Current test Conditions


    Original     		PDF KM736V889 KM718V989 256Kx36 512Kx18 512Kx18-Bit 130mA 120mA 110mA 100mA

    Untitled

    Abstract: No abstract text available
    Text: KM736V889 KM718V989 256Kx36 & 512Kx18 Synchronous SRAM Document Title 256Kx36 & 512Kx18-Bit Synchronous Pipelined Burst SRAM Revision History Rev. No. History Draft Date Remark 0.0 Initial draft April. 10 . 1998 Preliminary 0.1 Modify DC characteristics Input Leakage Current test Conditions


    Original     		PDF KM736V889 KM718V989 256Kx36 512Kx18 512Kx18-Bit 130mA 120mA 110mA 100mA

    Untitled

    Abstract: No abstract text available
    Text: KM736V889 KM718V989 256Kx36 & 512Kx18 Synchronous SRAM Document Title 256Kx36 & 512Kx18-Bit Synchronous Pipelined Burst SRAM Revision History Rev. No. History Draft Date Remark 0.0 Initial draft April. 10 . 1998 Preliminary 0.1 Modify DC characteristics Input Leakage Current test Conditions


    Original     		PDF KM736V889 KM718V989 256Kx36 512Kx18 512Kx18-Bit 130mA 120mA 110mA 100mA

    Untitled

    Abstract: No abstract text available
    Text: KM736V889 KM718V989 256Kx36 & 512Kx18 Synchronous SRAM Document Title 256Kx36 & 512Kx18-Bit Synchronous Pipelined Burst SRAM Revision History Rev. No. History Draft Date Remark 0.0 Initial draft April. 10 . 1998 Preliminary 0.1 Modify DC characteristics Input Leakage Current test Conditions


    Original     		PDF KM736V889 KM718V989 256Kx36 512Kx18 512Kx18-Bit 130mA 120mA 110mA 100mA

    50REF

    Abstract: No abstract text available
    Text: KM736V889 KM718V989 PRELIMINARY 256Kx36 & 512Kx18 Synchronous SRAM Document Title 256Kx36 & 512Kx18-Bit Synchronous Pipelined Burst SRAM Revision History Rev. No. History Draft Date Remark 0.0 Initial draft April. 10 . 1998 Preliminary 0.1 Modify DC characteristics Input Leakage Current test Conditions


    Original     		PDF KM736V889 KM718V989 256Kx36 512Kx18 512Kx18-Bit 130mA 120mA 110mA 100mA 50REF

    K7A803609B-PC25

    Abstract: K7A403600B-PC16 K7I161882B-EC16 K6R4016V1D-TC08 K7A403600M-QC16 K7I161882B-EC30 K6R4008V1C-JC12 K6R4016V1D-UC10 K6R1008V1C-JC10 K7R643682M-FC20
    Text: SAMSUNG # - Connect pin 14 FT pin to Vss * - Tie down extra four I/Os with resistor K6R1016V1C-FC10 K6R1016V1C-FC12 K6R1016V1C-FC15 K6R1016V1C-FC20 K6R1016V1C-JC10 K6R1016V1C-JC12 K6R1016V1C-JC15 K6R1016V1C-JC20 K6R1016V1C-TC10 K6R1016V1C-TC12 K6R1016V1C-TC15


    Original     		PDF K6R1016V1C-FC10 K6R1016V1C-FC12 K6R1016V1C-FC15 K6R1016V1C-FC20 K6R1016V1C-JC10 K6R1016V1C-JC12 K6R1016V1C-JC15 K6R1016V1C-JC20 K6R1016V1C-TC10 K6R1016V1C-TC12 K7A803609B-PC25 K7A403600B-PC16 K7I161882B-EC16 K6R4016V1D-TC08 K7A403600M-QC16 K7I161882B-EC30 K6R4008V1C-JC12 K6R4016V1D-UC10 K6R1008V1C-JC10 K7R643682M-FC20

    PA0016

    Abstract: STR11006 SO41P PIONEER PA0016 7 segment to bcd converter 74c915 SAJ141 74HC145 tms1122 IC PA0016 KOR 2310 transistor
    Text: Utgåva 2005-03-24 Alla artiklar i katalogen finns normalt i lager men det tillkommer och utgår kontinuerligt. För aktuell information om prisvärt industriöverskott / surplus surfa in på: http://www.labb.se/surplus.htm Tel: 08-641 86 30 Fax: 08-641 87 30


    Original     		PDF 14-dagar PA0016 STR11006 SO41P PIONEER PA0016 7 segment to bcd converter 74c915 SAJ141 74HC145 tms1122 IC PA0016 KOR 2310 transistor

    Untitled

    Abstract: No abstract text available
    Text: KM736V889 KM718V989 PRELIMINARY 256Kx36 & 512Kx18 Synchronous SRAM 256Kx36 & 512Kx18-Bit Synchronous Pipelined Burst SRAM Rev. No. Draft Date History Remark 0.0 Initial draft April. 10 . 1998 Preliminary 0.1 M odify DC characteristics Input Leakage Current test Conditions


    OCR Scan     		PDF KM736V889 KM718V989 256Kx36 512Kx18 512Kx18-Bit 130mA 120mA 100mA 1024K

    Untitled

    Abstract: No abstract text available
    Text: KM736V889 KM718V989 PRELIMINARY 256Kx36 & 512Kx18 Synchronous SRAM Document Title 256Kx36 & 512Kx18-Bit Synchronous Pipelined Burst SRAM Revision History Rev. No. 0.0 History Draft Date Initial draft Remark April. 10 . 1998 Preliminary 0.1 M odify DC characteristics Input Leakage Current test Conditions


    OCR Scan     		PDF KM736V889 KM718V989 256Kx36 512Kx18 512Kx18-Bit -604K 1024K 18ELECTRONICS