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    KM68B4002J Search Results

    KM68B4002J Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Type PDF
    KM68B4002J-10 Samsung Electronics 512K x 8 Bit high Speed BiCMOS Static RAM Scan PDF
    KM68B4002J-12 Samsung Electronics 512K x 8 Bit high Speed BiCMOS Static RAM Scan PDF
    KM68B4002J-15 Samsung Electronics 512K x 8 Bit high Speed BiCMOS Static RAM Scan PDF

    KM68B4002J Datasheets Context Search

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    KM68B4002J-12

    Abstract: KM68B4002J-15
    Text: KM68B4002 CMOS SRAM 512 K x 8Bit High-Speed BiCMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time 12,13,15 ns Max. • Low Power Dissipation Standby (TTL) : 60 mA(Max) (CMOS): 30 mA(Max.) Operating KM68B4002J-12:195mA(Max.) KM68B4002J-13:195 mA(Max.)


    OCR Scan     		PDF KM68B4002 512Kx KM68B4002J-12 195mA KM68B4002J-13 KM68B4002J-15 KM68B4002J 36-SOJ-400 KM68B4002 304-bit

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY BiCMOS SRAM KM68B4002 524,288 WORD x 8 Bit High-Speed BiCMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time : 10ns, 12ns, 15ns • Low Power Dissipation Standby TTL : 60mA (CMOS) : 30mA Operating KM68B4002J-10 : 200mA(Max.) KM68B4002J-12 : 195mA(Max.)


    OCR Scan     		PDF KM68B4002 KM68B4002J-10 200mA KM68B4002J-12 195mA KM68B4002J-15 190mA KM68B4002J 36-SOJ-4QO KM68B4002

    Untitled

    Abstract: No abstract text available
    Text: KM68B4002 CMOS SRAM 512K x8B it High-Speed BiCMOS Static RAM FEATURES GENERAL DESCRIPTION •Fast Access Time 12,13,15 ns Max. • Low Power Dissipation Standby (TTL) : 60 mA(Max.) (CMOS): 30mA(Max.) Operating KM68B4002J-12:195mA(Max.) KM68B4002J-13:195 mA(Max.)


    OCR Scan     		PDF KM68B4002 KM68B4002J-12 195mA KM68B4002J-13 KM68B4002J-15 KM68B4002J 36-SOJ-4QO KM68B4002 304-bit

    SRAM 10ns

    Abstract: KM68B4002J-10 KM68B4002J-12 KM68B4002J-15 a1T35
    Text: PRELIMINARY BiCMOS SRAM KM68B4002 524,288 WORD x 8 Bit High-Speed BiCMOS Static RAM FEATURES • Fast Access Time : 10ns, 12ns, 15ns • Low Power Dissipation Standby TTL : 60mA (CMOS) : 30mA Operating KM68B4002J-10 :200mA(Max.) KM68B4002J-12 : 195mA(Max.)


    OCR Scan     		PDF KM68B4002 KM68B4002J-10 200mA KM68B4002J-12 195mA KM68B4002J-15 190mA KM68B4002J 36-SOJ-4QO KM68B4002 SRAM 10ns KM68B4002J-10 KM68B4002J-12 KM68B4002J-15 a1T35

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY BiCMOS SRAM KM68B4002 524,288 WORD x 8 Bit High-Speed BiCMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time : 10ns, 12ns, 15ns • Low Power Dissipation Standby TTL : 60mA (CMOS) : 30mA Operating KM68B4002J-10 : 200mA(Max.) KM68B4002J-12 : 195mA(Max.)


    OCR Scan     		PDF KM68B4002 KM68B4002J-10 200mA KM68B4002J-12 195mA KM68B4002J-15 190mA KM68B4002J 36-SOJ-4 KM68B4002

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY KM68B4002 BiCMOS SRAM 512K x 8 Bit High Speed BiCMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time 10,12,15 ns Max. • Low Power Dissipation The KM68B4002 is a 4,194,304-bit high-speed Static Random Access Memory organized as 524,288 words


    OCR Scan     		PDF KM68B4002 KM68B4002 304-bit KM68B4002J-10 KM68B4002J-12: KM68B4002J-15 190mA KM68B4002J: 36-SOJ-400

    Untitled

    Abstract: No abstract text available
    Text: KM68B4002 BiCMOS SRAM Document Tills 512Kx8 Bit High Speed Static RAM 5V Operating , Revolutionary Pin out. Operated at Commercial Temperature Range. Revision History Rev No. History Draft Data Rev. 0.0 Initial release with Design Target. Oct. 14th, 1993 Design Target


    OCR Scan     		PDF KM68B4002 512Kx8 36-SOJ-400

    68B40

    Abstract: No abstract text available
    Text: KM68B4002 BiCMOS SRAM 5 12K x 8 Bit High Speed BiCMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time 12,13,15 ns Max. The KM68B4002 is a 4,194,304-bit high-speed Static • Low Power Dissipation Standby (TTL) Random Access Memory organized as 524,288 words


    OCR Scan     		PDF KM68B4002 68B4002-12 68B4002-13 68B4002-15 KM68B4002J: 36-SOJ-4QO KM68B4002 304-bit 68B40

    Untitled

    Abstract: No abstract text available
    Text: KM68B4002 BiCMOS SRAM 512Kx 8 Bit High Speed BiCMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time 12,13,15 ns Max. The KM68B4002 Is a 4,194,304-bit high-speed Static • Low Power Dissipation Random Access Memory organized as 524,288 words


    OCR Scan     		PDF KM68B4002 512Kx KM68B4002 304-bit 68B4002-12 KM68B4002-13 KM68B4002-15 190mA KM68B4002J: 36-SCU-400

    Untitled

    Abstract: No abstract text available
    Text: KM68B4002 BiCMOS SRAM Document Title 512Kx8 Bit High Speed Static RAM 5V Operating , Revolutionary Pin out. Operated at Commercial Temperature Range. Revision History Rev No. History Rev. 0.0 Initial release with Design Target. Oct. 14th, 1993 Design Target


    OCR Scan     		PDF KM68B4002 512Kx8

    0023A3

    Abstract: A13A14A15 36-SOJ-400
    Text: KM68B4002 BiCMOS SRAM 5 12K x 8 Bit High Speed BiCMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time 12,13,15 ns Max. • Low Power Dissipation Standby (TTL) : 60 mA(Max.) (CMOS): 30 mA(Max.) Operating KM68B4002-12 : 195 mA(Max ) KM68B4002-13 : 195 mA(Max.)


    OCR Scan     		PDF KM68B4002 KM68B4002-12: KM68B4002-13 KM68B4002-15 KM68B4002J: 36-SOJ-400 KM68B4002 304-bit 0023A3 A13A14A15 36-SOJ-400

    Untitled

    Abstract: No abstract text available
    Text: KM68B4002 BiCMOS SRAM 512K x 8 Bit High-Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time 12,13,15ns{Max. • Low Power Dissipation Standby TTL) : 60mA(Max.) (CMOS) :30mA(Max.) Operating KM68B4002 - 1 2 : 195mA(Max.) KM68B4002 - 1 3 : 195mA(Max.)


    OCR Scan     		PDF KM68B4002 KM68B4002 195mA 190mA KM68B4002J 36-SQJ-400