Untitled
Abstract: No abstract text available
Text: PRELIMINARY BiCMOS SRAM KM64B4002 1,048,576 WORD x 4 Bit High-Speed BiCMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time : 10ns, 12ns, 15ns • Low Power Dissipation Standby TTL : 60mA (CMOS) : 30mA Operating KM64B4002J-10 : 190mA(Max.) KM64B4002J-12 : 185mA(Max.)
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OCR Scan
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KM64B4002
KM64B4002J-10
190mA
KM64B4002J-12
185mA
KM64B4002J-15
180mA
KM64B4002J
32-SOJ-400
KM64B4002
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PDF
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km64b4002j-15
Abstract: No abstract text available
Text: PRELIMINARY BiCMOS SRAM KM64B4002 1,048,576 WORD x 4 Bit High-Speed BiCMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time : 10ns, 12ns, 15ns • Low Power Dissipation Standby TTL : 60mA (CMOS) : 30mA Operating KM84B4002J-10 : 190mA(Max.) KM64B4002J-12 : 185mA(Max.)
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OCR Scan
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KM64B4002
KM84B4002J-10
190mA
KM64B4002J-12
185mA
KM64B4002J-15
180mA
KM64B4002J
32-SQJ-400
KM64B4002
km64b4002j-15
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PDF
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KM64B4002J-10
Abstract: KM64B4002J-12 KM64B4002J-15
Text: PRELIMINARY BiCMOS SRAM KM64B4002 1,048,576 WORD x 4 Bit High-Speed BiCMOS Static RAM GENERAL DESCRIPTION FEATURES • Fast Access Time : 10ns, 12ns, 15ns • Low Power Dissipation Standby fTTL : 60mA CMOS) : 30mA Operating KM64B4002J-10 : 190mA(Max.) KM64B4002J-12 :185mA(Max.)
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OCR Scan
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KM64B4002
KM64B4002J-10
190mA
KM64B4002J-12
185mA
KM64B4002J-15
180mA
KM64B4002J
32-S0J-40Q
KM64B4002
KM64B4002J-10
KM64B4002J-12
KM64B4002J-15
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PDF
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Untitled
Abstract: No abstract text available
Text: BiCMOS SRAM KM64B4002 1M x 4 Bit With ÜE High-Speed BiCMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time 12,13,15 ns(Max.) • Low Power Dissipation Standby (TTL) : 60 mA(Max.) (CMOS): 30 mA(Max.) Operating KM64B4002-12 : 185 mA(Max.) KM64B4002-13:1 8 5 mA(Max.)
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OCR Scan
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KM64B4002
KM64B4002-12
KM64B4002-13
KM64B4002-15:
KM64B4002J:
32-SOJ-400
KM64B4002
304-bit
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PDF
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Untitled
Abstract: No abstract text available
Text: KM64B4002 BiCMOS SRAM 1M x 4 Bit With UE High-Speed BiCMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time 12,13,15 ns(Max.) • Low Power Dissipation Standby (TTL) : 60 mA(Max.) (CMOS): 30 mA(Max.) O perating KM 64B4002-12 : 185 mA(Max.) KM 64B4002-13 : 185 mA(M ax )
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OCR Scan
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KM64B4002
64B4002-12
64B4002-13
KM64B4002-15
KM64B4002J:
32-SOJ-4QO
KM64B4002
304-bit
64B4002
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PDF
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32-SOJ-4QO
Abstract: No abstract text available
Text: BiCMOS SRAM KM64B4002 1M x 4 Bit With UE High-Speed BiCMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Tim e 12,13,15 ns(Max.) • Low Power Dissipation Standby (TTL) : 60 mA(Max.) (CMOS): 30 mA(Max.) Operating KM64B4002-12 : 185 mA(Max.) K M 64B 4002-13: 185 mA(Max.)
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OCR Scan
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KM64B4002
KM64B4002-12
KM64B4002-13:
KM64B4002-15
KM64B4002J:
32-SOJ-4QO
KM64B4002
304-bit
32-SOJ-4QO
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PDF
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Untitled
Abstract: No abstract text available
Text: KM64B4002 BiCMOS SRAM 1M x 4 Bit with OE High-Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time 12,13,15ns(Max.) • Low Power Dissipation Standby (TTL) : 60mA(Max.) (CMOS) : 30mAMax.) Operating KM64B4002 - 1 2 :185mA{Max.) KM64B40Q2 -1 3 : 185mA(Max.)
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OCR Scan
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KM64B4002
30mAMax.
KM64B4002
185mA
KM64B40Q2
180mA
KM64B4002J
32-SOJ-4QO
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PDF
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Untitled
Abstract: No abstract text available
Text: KM64B4002 BiCMOS SRAM Document Title 1Mx4 Bit with OE High Speed Static RAM(5V Operating), Revolutionary Pin out. Operated at Commercial Temperature Range. Revision History Rev No. History Rev. 0.0 Initial release with Design Target. Oct. 14th, 1993 Design Target
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OCR Scan
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KM64B4002
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PDF
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