Untitled
Abstract: No abstract text available
Text: CMOS SRAM KM616V513 32,768 WORD x 16 Bit High-Speed CMOS Static RAM 3.3V Operating FEATURES GENERAL DESCRIPTION • Fast A c c e ss Time : 17, 20, 25ns(max.) • Low Power Dissipation Standby (TTL) 3mA (max.) . (CMOS) : 100juA (max.) Operating KM616V513-17
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KM616V513
100juA
KM616V513-17
KM616V513-20
KM616V513-25
KM616V513
D01fl554
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Untitled
Abstract: No abstract text available
Text: SAMSUNG E L E C T R O N I C S I NC h7E T> m 7^4142 00171332 35Ô M S I I G K PRELIMINARY KM616V513 CMOS SRAM 32,768 W O R D x 16 B it High-Speed CMOS Static RAM 3.3V Operating FEATURES GENERAL DESCRIPTION • Fast Access Time: 17, 20, 25ns (Max.) • Low Power Dissipation
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KM616V513
KM616V513J-17
130mA
KM616V513J-20
120mA
KM616V513J-25:
110mA
l/09-l/0
KM616V513J:
40-Pin
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Untitled
Abstract: No abstract text available
Text: CMOS SRAM KM616V513 32,768 WORD x 16 Bit High-Speed CMOS Static RAM 3.3V Operating GENERAL DESCRIPTION FEATURES • Fast Access Time : 17, 20, 25ns(max.) ■ Low Power Dissipation Standby OTL) 3mA (max.) (CMOS) : 100,« A (max.) Operating KM616V513-17 :130m A (max.)
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KM616V513
KM616V513-17
KM616V513-20
KM616V513-25
110mA
KM616V513J
40-Pin
400mil)
KM616V513
288-bit
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t538
Abstract: No abstract text available
Text: PRELIMINARY KM616V513 CMOS SRAM 32,768 WORDx 16 Bit High-Speed CMOS Static RAM 3.3V Operating FEATURES GENERAL DESCRIPTION • Fast Access Time: 17, 20, 25ns (Max.) • Low Power Dissipation Standby (TTL) 3mA (Max.) (CMOS) 100 „A (Max.) Operating K M 616V513J-17:130m A (Max.)
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KM616V513
616V513J-17
616V513J-20
616V513J-25
KM616V513J:
40-Pin
616V513is
288-bit
400mil)
t538
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