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Catalog Datasheet	MFG & Type	Document Tags	PDF
Untitled Abstract: No abstract text available Text: CMOS SRAM KM616V513 32,768 WORD x 16 Bit High-Speed CMOS Static RAM 3.3V Operating FEATURES GENERAL DESCRIPTION • Fast A c c e ss Time : 17, 20, 25ns(max.) • Low Power Dissipation Standby (TTL) 3mA (max.) . (CMOS) : 100juA (max.) Operating KM616V513-17	OCR Scan	KM616V513 100juA KM616V513-17 KM616V513-20 KM616V513-25 KM616V513 D01fl554	PDF
Untitled Abstract: No abstract text available Text: SAMSUNG E L E C T R O N I C S I NC h7E T> m 7^4142 00171332 35Ô M S I I G K PRELIMINARY KM616V513 CMOS SRAM 32,768 W O R D x 16 B it High-Speed CMOS Static RAM 3.3V Operating FEATURES GENERAL DESCRIPTION • Fast Access Time: 17, 20, 25ns (Max.) • Low Power Dissipation	OCR Scan	KM616V513 KM616V513J-17 130mA KM616V513J-20 120mA KM616V513J-25: 110mA l/09-l/0 KM616V513J: 40-Pin	PDF
Untitled Abstract: No abstract text available Text: CMOS SRAM KM616V513 32,768 WORD x 16 Bit High-Speed CMOS Static RAM 3.3V Operating GENERAL DESCRIPTION FEATURES • Fast Access Time : 17, 20, 25ns(max.) ■ Low Power Dissipation Standby OTL) 3mA (max.) (CMOS) : 100,« A (max.) Operating KM616V513-17 :130m A (max.)	OCR Scan	KM616V513 KM616V513-17 KM616V513-20 KM616V513-25 110mA KM616V513J 40-Pin 400mil) KM616V513 288-bit	PDF
t538 Abstract: No abstract text available Text: PRELIMINARY KM616V513 CMOS SRAM 32,768 WORDx 16 Bit High-Speed CMOS Static RAM 3.3V Operating FEATURES GENERAL DESCRIPTION • Fast Access Time: 17, 20, 25ns (Max.) • Low Power Dissipation Standby (TTL) 3mA (Max.) (CMOS) 100 „A (Max.) Operating K M 616V513J-17:130m A (Max.)	OCR Scan	KM616V513 616V513J-17 616V513J-20 616V513J-25 KM616V513J: 40-Pin 616V513is 288-bit 400mil) t538	PDF