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    KM616V1002BJ Datasheets (6)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    KM616V1002BJ-10 Samsung Electronics 64K x 16 Bit High-Speed CMOS Static RAM(3.3V Operating) Original PDF
    KM616V1002BJ-12 Samsung Electronics 64K x 16 Bit High-Speed CMOS Static RAM(3.3V Operating) Original PDF
    KM616V1002BJ-8 Samsung Electronics 64K x 16 Bit High-Speed CMOS Static RAM(3.3V Operating) Original PDF
    KM616V1002BJI-10 Samsung Electronics 64K x 16 Bit High-Speed CMOS Static RAM(3.3V Operating) Original PDF
    KM616V1002BJI-12 Samsung Electronics 64K x 16 Bit High-Speed CMOS Static RAM(3.3V Operating) Original PDF
    KM616V1002BJI-8 Samsung Electronics 64K x 16 Bit High-Speed CMOS Static RAM(3.3V Operating) Original PDF

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    KM616V1002B

    Abstract: No abstract text available
    Text: PRELIMINARY KM616V1002B/BL, KM616V1002BI/BLI Preliminary PRELIMINARY CMOS SRAM Document Title 64Kx16 Bit High Speed Static RAM 3.3V Operating , Revolutionary Pin out. Operated at Commercial and Industrial Temperature Ranges. Revision History Rev No. History


    Original     		PDF KM616V1002B/BL, KM616V1002BI/BLI 64Kx16 8/10/12ns 44-TSOP2-400F KM616V1002B

    K7A803609B-PC25

    Abstract: K7A403600B-PC16 K7I161882B-EC16 K6R4016V1D-TC08 K7A403600M-QC16 K7I161882B-EC30 K6R4008V1C-JC12 K6R4016V1D-UC10 K6R1008V1C-JC10 K7R643682M-FC20
    Text: SAMSUNG # - Connect pin 14 FT pin to Vss * - Tie down extra four I/Os with resistor K6R1016V1C-FC10 K6R1016V1C-FC12 K6R1016V1C-FC15 K6R1016V1C-FC20 K6R1016V1C-JC10 K6R1016V1C-JC12 K6R1016V1C-JC15 K6R1016V1C-JC20 K6R1016V1C-TC10 K6R1016V1C-TC12 K6R1016V1C-TC15


    Original     		PDF K6R1016V1C-FC10 K6R1016V1C-FC12 K6R1016V1C-FC15 K6R1016V1C-FC20 K6R1016V1C-JC10 K6R1016V1C-JC12 K6R1016V1C-JC15 K6R1016V1C-JC20 K6R1016V1C-TC10 K6R1016V1C-TC12 K7A803609B-PC25 K7A403600B-PC16 K7I161882B-EC16 K6R4016V1D-TC08 K7A403600M-QC16 K7I161882B-EC30 K6R4008V1C-JC12 K6R4016V1D-UC10 K6R1008V1C-JC10 K7R643682M-FC20

    mn4117405

    Abstract: NN5118165 XL93LC46AP NN514265 MS6264L-10PC w24M257 NN514265A w24m257ak-15 HY62256ALP10 mhs p80c51
    Text: ISSI CROSS REFERENCE GUIDE Integrated Silicon Solution, Inc. ISSI ® Integrated Silicon Solution, Inc. CROSS REFERENCE GUIDE SRAM DRAM EEPROM EPROM MICROCONTROLLER JUNE 1999 Integrated Silicon Solution, Inc. CP005-1F 6/1/99 1 ISSI CROSS REFERENCE GUIDE


    Original     		PDF CP005-1F IS89C51 Z16C02 Z86E30 ZZ16C03 Z8036 Z8536 Z8038 Z5380 Z53C80 mn4117405 NN5118165 XL93LC46AP NN514265 MS6264L-10PC w24M257 NN514265A w24m257ak-15 HY62256ALP10 mhs p80c51

    KM616V1002B

    Abstract: No abstract text available
    Text: PRELIMINARY KM616V1002B/BL, KM616V1002BI/BLI Preliminary PRELIMINARY CMOS SRAM Document Title 64Kx16 Bit High Speed Static RAM 3.3V Operating , Revolutionary Pin out. Operated at Commercial and Industrial Temperature Range. Revision History Rev No. History


    Original     		PDF KM616V1002B/BL, KM616V1002BI/BLI 64Kx16 8/10/12ns 44-TSOP2-400F KM616V1002B

    KM62256BLG-7

    Abstract: K6R4016V1C-FI12 IS62LV1024LL-70T1 K6R4016V1C-TI10 K6R1016C1C-TC12 KM62256BLG7 MT58L32L32PT-7.5 GVT72024A8J-10L K6R4016V1C-FI10 K6R4008V1C-JC12
    Text: ISSI SRAM Cross Reference Important: please read disclaimer on last page Cypress P/N ISSI P/N C7C1334-10AC IS61NW6432-8TQ C7C1334-5AC IS61NW6432-5TQ IS61NW6432-6TQ, C7C1334-7AC IS61NW6432-7TQ C7C1335-5.5AC IS61C632A-5TQ C7C1335-7AC IS61C632A-7TQ C7C1335-8.5AC


    Original     		PDF C7C1334-10AC IS61NW6432-8TQ C7C1334-5AC IS61NW6432-5TQ IS61NW6432-6TQ, C7C1334-7AC IS61NW6432-7TQ C7C1335-5 IS61C632A-5TQ C7C1335-7AC KM62256BLG-7 K6R4016V1C-FI12 IS62LV1024LL-70T1 K6R4016V1C-TI10 K6R1016C1C-TC12 KM62256BLG7 MT58L32L32PT-7.5 GVT72024A8J-10L K6R4016V1C-FI10 K6R4008V1C-JC12

    Untitled

    Abstract: No abstract text available
    Text: KM616V1002B/BL, KM616V1002BI/BLI CMOS SRAM Document Title 64Kx16 Bit High Speed Static RAM 3.3V Operating , Revolutionary Pin out. Operated at Commercial and Industrial Temperature Range. Revision History Rev No. History Rev. 0.0 Initial release with Design Target.


    OCR Scan     		PDF KM616V1002B/BL, KM616V1002BI/BLI 64Kx16 8/10/12ns 200/190/180mA 200/195/190mA 44-SOJ-400

    Untitled

    Abstract: No abstract text available
    Text: KM616V1002B/BL, KM616V1002BI/BLI CMOS SRAM 64K x 16 Bit High-Speed CMOS Static RAM{3.3V Operating FEATURES GENERAL DESCRIPTION • Fast Access Time 8,10,12ns Max.) • Low Power Dissipation Standby (T T l) : 30mA(Max ) (CMOS) : 50mA(Max.) 0.5mA(Max.) - L-Ver. only


    OCR Scan     		PDF KM616V1002B/BL, KM616V1002BI/BLI KM616V1002B/BL 200mA 195mA 190mA KM616V1002BJ 44-SOJ-4GO KM616V1002BT

    Untitled

    Abstract: No abstract text available
    Text: KM616V1002B/BL, KM616V1002BI/BLI CMOS SRAM Document Title 64Kx16 Bit High Speed Static RAM 3.3V Operating , Revolutionary Pin out. Operated at Commercial and Industrial Temperature Range. Revision History RevNo. History Draft Data Remark Rev. 0.0 Initial release with Design Target.


    OCR Scan     		PDF KM616V1002B/BL, KM616V1002BI/BLI 64Kx16 8/10/12ns 200/190/180mA 44-SOJ-400 44-TSOP2-400F