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    KM6164002BJ Price and Stock

    Samsung Semiconductor KM6164002BJ-12

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    Bristol Electronics KM6164002BJ-12 2,106
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    Samsung Semiconductor KM6164002BJ-10

    256K X 16 STANDARD SRAM, 10 ns, PDSO44
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    Quest Components KM6164002BJ-10 324
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    Samsung Electro-Mechanics KM6164002BJ-12

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    NexGen Digital KM6164002BJ-12 1
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    KM6164002BJ Datasheets (4)

    Part ECAD Model Manufacturer Description Curated Type PDF
    KM6164002BJ-10 Samsung Electronics 256K x 16 Bit High-Speed CMOS Static RAM Original PDF
    KM6164002BJ-12 Samsung Electronics 256K x 16 Bit High-Speed CMOS Static RAM Original PDF
    KM6164002BJ-15 Samsung Electronics 256K x 16 Bit High-Speed CMOS Static RAM Original PDF
    KM6164002BJI-15 Samsung Electronics IC SRAM CHIP ASYNC SINGLE 5V 4MBIT 256K x 16 15NS 44SOJ Original PDF

    KM6164002BJ Datasheets Context Search

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    KM616400

    Abstract: No abstract text available
    Text: PRELIMPreliminaryPPPPPPPPPINARY PRELIMINARY CMOS SRAM KM6164002B, KM6164002BI Document Title 256Kx16 Bit High Speed Static RAM 5V Operating , Revolutionary Pin out. Operated at Commercial and Industrial Temperature Range. Revision History Rev No. History Draft Data


    Original     		PDF KM6164002B, KM6164002BI 256Kx16 44-TSOP2-400F KM616400

    Untitled

    Abstract: No abstract text available
    Text: PRELIMPreliminaryPPPPPPPPPINARY KM6164002B, KM6164002BI CMOS SRAM Document Title 256Kx16 Bit High Speed Static RAM 5V Operating , Operated at Commercial and Industrial Temperature Range. Revision History Rev No. History Draft Data Rev. 0.0 Initial release with Design Target.


    Original     		PDF KM6164002B, KM6164002BI 256Kx16 250mA 240mA 230mA 44-TSOP2-400F

    512X16

    Abstract: KM6164002B 512X16 sram
    Text: Pro-iïiTTin&y CMOS SRAM KM6164002B, KM6164002BI 256K x 16 Bit High-Speed CMOS Static RAM FEATURES G ENER AL DESCRIPTION •• Fast Access Time 10,12,15 * Max. - Low Power Dissipation Standby (TTL) : 40* • (Max.) The KM6164002B is a 4,194,304-bit high-speed Static Random


    OCR Scan     		PDF KM6164002B, KM6164002BI 256Kx KM6164002B I/O16 KM6164002BJ 44-SOJ-400 KM6164002BT 512X16 512X16 sram

    Untitled

    Abstract: No abstract text available
    Text: P r r ^ - m in e ^ Y KM6164002B, KM6164002BI CMOS SRAM 256K x 16 Bit High-Speed CMOS Static RAM FEATURES G E N E R A L D E S C R IP T IO N •• Fast Access Time 10,12,15* • Max. - Low Power Dissipation The KM6164002B is a 4,194,304-bit high-speed Static Random


    OCR Scan     		PDF KM6164002B, KM6164002BI KM6164002B 304-bit 71b4142 G03b70Q KM6164002Bl 44-TS

    Untitled

    Abstract: No abstract text available
    Text: Preliminary CMOS SRAM KM6164002B, KM6164002BI Document Title 256Kx16 Bit High Speed Static RAM 5V Operating , Revolutionary Pin out. Operated at Commercial and Industrial Temperature Range. Revision History Rev No. History Draft Data Remark Rev. 0.0 Initial release with Design Target.


    OCR Scan     		PDF KM6164002B, KM6164002BI 256Kx16 44-SOJ-400 44-TSO P2-400F

    Untitled

    Abstract: No abstract text available
    Text: KM6164002B, KM6164002Bi CMOS SRAM 2S6KX16 Bit High-Speed CMOS Static RAM FEATURES G E N E R A L D E S C R IP T IO N • Fast Access Time 10,12,15ns Max. • Low Power Dissipation Standby (TTL) : 50mA(Max.) (CMOS) : 10mA(Max.) Operating KM6164002B-10 : 260mA(Max.)


    OCR Scan     		PDF KM6164002B, KM6164002Bi 2S6KX16 KM6164002B-10 260mA KM6164002B 255mA 250mA KM6164002BJ