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    KM48V8104B Search Results

    KM48V8104B Datasheets (19)

    Part ECAD Model Manufacturer Description Curated Type PDF
    KM48V8104B Samsung Electronics 8M x 8-Bit CMOS Dynamic RAM with Extended Data Out Original PDF
    KM48V8104BK-45 Samsung Electronics 8M x 8-Bit CMOS Dynamic RAM with Extended Data Out Original PDF
    KM48V8104BK-5 Samsung Electronics 8M x 8-Bit CMOS Dynamic RAM with Extended Data Out Original PDF
    KM48V8104BK-6 Samsung Electronics 8M x 8-Bit CMOS Dynamic RAM with Extended Data Out Original PDF
    KM48V8104BK-L-45 Samsung Electronics 8M x 8-Bit CMOS Dynamic RAM with Extended Data Out Original PDF
    KM48V8104BKL-45 Samsung Electronics 8M x 8-Bit CMOS dynamic RAM with extended data out, 45ns Original PDF
    KM48V8104BK-L-5 Samsung Electronics 8M x 8-Bit CMOS Dynamic RAM with Extended Data Out Original PDF
    KM48V8104BKL-5 Samsung Electronics 8M x 8-Bit CMOS dynamic RAM with extended data out, 50ns Original PDF
    KM48V8104BK-L-6 Samsung Electronics 8M x 8-Bit CMOS Dynamic RAM with Extended Data Out Original PDF
    KM48V8104BKL-6 Samsung Electronics 8M x 8-Bit CMOS dynamic RAM with extended data out, 60ns Original PDF
    KM48V8104BS-45 Samsung Electronics 8M x 8-Bit CMOS Dynamic RAM with Extended Data Out Original PDF
    KM48V8104BS-5 Samsung Electronics 8M x 8-Bit CMOS Dynamic RAM with Extended Data Out Original PDF
    KM48V8104BS-6 Samsung Electronics 8M x 8-Bit CMOS Dynamic RAM with Extended Data Out Original PDF
    KM48V8104BS-L-45 Samsung Electronics 8M x 8-Bit CMOS Dynamic RAM with Extended Data Out Original PDF
    KM48V8104BSL-45 Samsung Electronics 8M x 8-Bit CMOS dynamic RAM with extended data out, 45ns Original PDF
    KM48V8104BS-L-5 Samsung Electronics 8M x 8-Bit CMOS Dynamic RAM with Extended Data Out Original PDF
    KM48V8104BSL-5 Samsung Electronics 8M x 8-Bit CMOS dynamic RAM with extended data out, 50ns Original PDF
    KM48V8104BS-L-6 Samsung Electronics 8M x 8-Bit CMOS Dynamic RAM with Extended Data Out Original PDF
    KM48V8104BSL-6 Samsung Electronics 8M x 8-Bit CMOS dynamic RAM with extended data out, 60ns Original PDF

    KM48V8104B Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    KM48V8004B

    Abstract: KM48V8104B
    Text: KM48V8004B, KM48V8104B CMOS DRAM 8M x 8bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 8,388,608 x 8 bit Extended Data Out Mode CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row. Refresh cycle 4K Ref. or 8K Ref. , access time (-45, -5 or -6), power consumption(Normal


    Original     		PDF KM48V8004B, KM48V8104B 400mil KM48V8004B KM48V8104B

    KM48V8004B

    Abstract: KM48V8104B
    Text: KM48V8004B, KM48V8104B CMOS DRAM 8M x 8bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 8,388,608 x 8 bit Extended Data Out Mode CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row. Refresh cycle 4K Ref. or 8K Ref. , access time (-45, -5 or -6), power consumption(Normal


    Original     		PDF KM48V8004B, KM48V8104B 400mil KM48V8004B KM48V8104B

    Untitled

    Abstract: No abstract text available
    Text: KMM372F80 8 3BK/BS DRAM MODULE ABSOLUTE MAXIMUM RATINGS * Item Voltage on any pin relative VSS Voltage on VCC supply relative to VSS Storage Temperature Power Dissipation Short Circuit Output Current Symbol Rating Unit VIN, VOUT VCC Tstg PD IOS -0.5 to +4.6


    Original     		PDF KMM372F80 100Max 54Max) 200Max 08Max) KMM372F803BK/BS KM48V8104BK, KM48V8104BS. KMM372F883BK/BS KM48V8004BK,

    Untitled

    Abstract: No abstract text available
    Text: DRAM MODULE KMM374F80 8 3BK/BS Unbuffered 8Mx72 DIMM (8Mx8 base) Revision 0.0 Dec. 1997 DRAM MODULE KMM374F80(8)3BK/BS Revision History Version 0.0 (Dec, 1997) • Removed two AC parameters t CACP (access time from CAS) and t AAP (access time from col. addr.) in AC CHARACTERISTICS.


    Original     		PDF KMM374F80 8Mx72 8Mx72bits

    Untitled

    Abstract: No abstract text available
    Text: UG48W644 8 8HSG Revision History Mar 04 , 1999 Rev - B Oct 30 , 1998 Rev - A Added More Detailed Dimension Information Of PCB , Full Data sheet Changed to new format. Datasheet released. 45388 Warm Springs Blvd. Fremont, CA. 94539 Tel: (510) 668-2088 Fax: (510) 661-2788


    Original     		PDF UG48W644 144Pin 144-pin

    DRAM 8Mx32 tsop

    Abstract: No abstract text available
    Text: DRAM MODULE KMM332F803BS-L 8Mx32 SODIMM 8Mx32 base Revision 0.0 Sept. 1997 DRAM MODULE KMM332F803BS-L Revision History Version 0.0 (Sept, 1997) • Removed two AC parameters t CACP (access time from CAS) and t AAP (access time from col. addr.) in AC CHARACTERISTICS.


    Original     		PDF KMM332F803BS-L 8Mx32 KMM332F803BS-L KMM332F803B 8Mx32bits KMM332F803B 72-pin DRAM 8Mx32 tsop

    KMM372F803BK

    Abstract: KMM372F803BS KMM372F883BK KMM372F883BS
    Text: KMM372F80 8 3BK/BS DRAM MODULE KMM372F80(8)3BK/BS EDO Mode 8M x 72 DRAM DIMM with ECC Using 8Mx8, 4K & 8K Refresh, 3.3V FEATURES GENERAL DESCRIPTION The Samsung KMM372F80(8)3B is a 8Mx72bits Dynamic RAM high density memory module. The Samsung KMM372F80(8)3B consists of nine CMOS 8Mx8bits DRAMs


    Original     		PDF KMM372F80 8Mx72bits 400mil 168-pin 100Max 54Max) KMM372F803BK KMM372F803BS KMM372F883BK KMM372F883BS

    KMM372F803BK

    Abstract: KMM372F803BS KMM372F883BK KMM372F883BS
    Text: KMM372F80 8 3BK/BS DRAM MODULE KMM372F80(8)3BK/BS EDO Mode 8M x 72 DRAM DIMM with ECC Using 8Mx8, 4K & 8K Refresh, 3.3V FEATURES GENERAL DESCRIPTION The Samsung KMM372F80(8)3B is a 8Mx72bits Dynamic RAM high density memory module. The Samsung KMM372F80(8)3B consists of nine CMOS 8Mx8bits DRAMs


    Original     		PDF KMM372F80 8Mx72bits 400mil 168-pin 100Max 54Max) KMM372F803BK KMM372F803BS KMM372F883BK KMM372F883BS

    Untitled

    Abstract: No abstract text available
    Text: DRAM MODULE KMM366F80 8 3BK2 KMM366F80(8)3BK2 EDO Mode without buffer 8M x 64 DRAM DIMM Using 8Mx8, 8K & 4K Refresh, 3.3V GENERAL DESCRIPTION FEATURES The Samsung KMM366F80(8)3BK2 is a 8Mx64bits Dynamic RAM high density memory module. The Samsung KMM366F80(8)3BK2 consists of eight CMOS 8Mx8bits


    Original     		PDF KMM366F80 8Mx64bits 400mil 168-pin KMM366F803BK2 KMM366F883BK2

    Untitled

    Abstract: No abstract text available
    Text: DRAM MODULE KMM374F80 8 3BK1 KMM374F80(8)3BK1 EDO Mode without buffer 8M x 72 DRAM DIMM with ECC Using 8Mx8, 8K & 4K Refresh, 3.3V GENERAL DESCRIPTION FEATURES The Samsung KMM374F80(8)3BK1 is a 8Mx72bits Dynamic RAM high density memory module. The Samsung


    Original     		PDF KMM374F80 8Mx72bits 400mil 168-pin KMM374F803BK1 KMM374F883004

    31DQ6

    Abstract: No abstract text available
    Text: KM48V8004B, KM48V8104B CMOS DRAM 8M x 8bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 8,388,608 x 8 bit Extended Data Out Mode CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row. Refresh cycle 4K Ref. or 8K Ref. , access time (-45, -5 or -6), power consumption(Normal


    OCR Scan     		PDF KM48V8004B, KM48V8104B 31DQ6

    8104b

    Abstract: No abstract text available
    Text: Preliminary SPEC CMOS DRAM KM48V8004B, KM48V8104B 8M x 8bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION T his is a fa m ily o f 8,3 88,60 8 x 8 bit Extended D ata O ut M ode C M O S DR AM s. Extended Data O ut M ode offers high speed random access of m em o ry cells w ith in the sam e row. R efresh cycle 4 K Ref. o r 8K Ref. , access tim e (-4, -5 o r -6), po w e r co n su m p tio n (N o rm a l or


    OCR Scan     		PDF KM48V8004B, KM48V8104B 8104b

    4MB DRAM

    Abstract: 4MX16 1MX16
    Text: TABLE OF CONTENTS I. GENERAL INFORMATION 1. Introduction . 11 2. Product Guide . 17 3. Ordering information . .


    OCR Scan     		PDF KM41C4000D/KM41V4000D. KM44C1000D/KM44V1000D. KM44C1003D -KM44C1004D/KM44V1004D. KM44C1005D -KM48C512D/KM48V512D. KM48C512D 4MB DRAM 4MX16 1MX16

    trw 810

    Abstract: No abstract text available
    Text: DRAM M ODULE KMM374F80 8 3BK1 Unbuffered 8Mx72 DIMM (8Mx8 base) Revision 0.0 Sept. 1997 DRAM M ODULE KMM374F80(8)3BK1 Revision History V e r s i o n 0.0 ( Se pt , 1 9 97 ) Rem oved tw o A C param eters t CACP(access tim e from CAS) and tAAP(access tim e from col. addr.) in AC C H A R A C T E R IS T IC S .


    OCR Scan     		PDF KMM374F80 8Mx72 374F80 8Mx72bits 400mil 08Max) trw 810

    KM44C4105C-6

    Abstract: KM44C16004
    Text: General Information CMOS DRAM 1. introduction 4Mbit 4Mx1 KM41C4000D-5 - KM41C4000D-6 - KM41C4000D-7 KM41C4000D-L5 1Mx4 KM41C4000D-L6 KM41C4000D-L7 KM41V4000D-6 KM41V4000D-7 KM41V4000D-L6 KM41V4000D-L7 KM44C1000D-5 - KM44C1000D-6 - KM44C1000D-7 KM44C1000D-L5 - KM44C1000D-L6 - KM44C1000D-L7


    OCR Scan     		PDF KM41C4000D-5 KM41C4000D-6 KM41C4000D-7 KM41C4000D-L5 KM41C4000D-L6 KM41V4000D-6 KM41V4000D-L6 KM41C4000D-L7 KM41V4000D-7 KM41V4000D-L7 KM44C4105C-6 KM44C16004

    Untitled

    Abstract: No abstract text available
    Text: DRAM MODULE KMM466F803BS2-L Revision History Version 0.0 Sept, 1997 Removed two AC parameters tCACP(access time from CAS) and tAAP(access time from col. addr.) in A C CHARACTERISTICS. DRAM MODULE KMM466F803BS2-L KMM466F803BS2-L EDO Mode 8M x 64 DRAM SOD IMM Using 8MX8, 4K Refresh 3.3 V, Low power/Self-Refresh


    OCR Scan     		PDF KMM466F803BS2-L KMM466F803BS2-L 8Mx64bits cycles/128ms, 150Max

    Untitled

    Abstract: No abstract text available
    Text: DRAM MODULE KMM372F80 8 3BK/BS KMM372F80(8)3BK/BS EDO Mode 8M x 72 DRAM DIMM with ECC Using 8Mx8, 4K & 8K Refresh, 3.3V FEATURES GENERAL DESCRIPTION The Samsung KMM372F80(8)3B is a 8Mx72bits Dynamic RAM high density memory module. The Samsung KMM372F80(8)3B consists of nine CMOS 8Mx8bits DRAMs


    OCR Scan     		PDF KMM372F80 8Mx72bits 400mil 168-pin KMM372F803BK KMM372F883BS 104ns

    Untitled

    Abstract: No abstract text available
    Text: PRIORITY DRAM MODULE KMM466F803BS2-L 8Mx64 SODIMM 8Mx8 base Revision 0.0 Sept. 1997 SAMSS00140 DRAM MODULE KMM466F803BS2-L Revision History Version 0.0 (Sept, 1997) Removed two AG parameters t CACP(access time from CAS) and tAAP(access time from col. addr.) in AC CHARACTERISTICS.


    OCR Scan     		PDF KMM466F803BS2-L 8Mx64 SAMSS00140 KMM466F803BS2-L 8Mx64bits 400mil

    k2624

    Abstract: No abstract text available
    Text: General Information CMOS DRAM 2. Product Guide Density Org. Power Supply 4Mbit 4Mx1 +5V±10% Part Number KM41C4000D# Spe«d ns 50/60/70 KM41 C4000D#-L +3.3V±0.3V KM41V4000D# 60/70 +5V±10% +3.3V±0.3V KM44C1000D# FP, LP KM44C1003D# Quad CÄS FP KM44C1004D#


    OCR Scan     		PDF KM41C4000D# C4000D KM41V4000D# KM41V4000W-L KM44C1000D# KM44C10OOD KM44C1003D# KM44C1004D# KM44C1004D KM44C1005D# k2624

    Untitled

    Abstract: No abstract text available
    Text: DR A M M O D U L E KMM466F803BS2-L 8Mx64 SODIMM 8Mx8 base Revision 0.0 Sept. 1997 DRAM M ODULE KM M 4 66 F 80 3B S2-L Revision History Version 0.0 (Sept, 1997) , Removed two AC parameters tCACP(access time from CAS) and tAAP(access tim e tro m col. addr.) in AC CHARACTERISTICS.


    OCR Scan     		PDF KMM466F803BS2-L 8Mx64 KMM466F803BS2-L 8Mx64bits 466F803BS2-L cycles/128ms, 150Max KM48V8104BS-L

    Untitled

    Abstract: No abstract text available
    Text: DRAM MODULE KMM332F803BS-L 8Mx32 SODIMM 8Mx32 base Revision 0.0 Sept. 1997 DRAM MODULE KMM332F803BS-L Revision History Version 0.0 (Sept, 1997) Removed two AC parameters tCACP(access time from CAS) and tAAP(access time from col. addr.) in A C CHARACTERISTICS.


    OCR Scan     		PDF KMM332F803BS-L 8Mx32 KMM332F803BS-L KMM332F803B 8Mx32bits 72-pin

    dram module

    Abstract: No abstract text available
    Text: DRAM MODULE KMM 366F80 8 3BK3 8Mx64 Unbuffered DIMM (8Mx8 base) Revision 0.0 Nov. 1997 -1 - Rev. 0.0 ( Nov. 19 97) DRAM MODULE KMM 366F80(8)3BK3 Re v i s i o n H is to ry Ve rs i on 0 . 0 (N ov . 1 997 ) • Changed PCB for signal integrity. • Changed Module Part No. from KMM366F80(8)3BK to KMM366F80(8)3BK3 caused by PCB revision .


    OCR Scan     		PDF 366F80 8Mx64 KMM366F80 8Mx64bits dram module

    Untitled

    Abstract: No abstract text available
    Text: DRAM MODULE KMM332F803BS-L 8Mx32 SODIMM 8Mx32 base Revision 0.0 Sept. 1997 DRAM MODULE KMM332F803BS-L Revision History Version 0.0 (Sept, 1997) Removed two AC parameters tCACP(access time from CAS) and tAAP(access time from col. addr.) in A C CHARACTERISTICS.


    OCR Scan     		PDF KMM332F803BS-L 8Mx32 KMM332F803BS-L KMM332F803B 8Mx32bits 72-pin