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    KM416V256DJ Price and Stock

    Samsung Semiconductor KM416V256D-J6

    256K X 16 FAST PAGE DRAM, 60 ns, PDSO40
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components KM416V256D-J6 676
    • 1 $15
    • 10 $15
    • 100 $15
    • 1000 $5.25
    • 10000 $5.25
    		Buy Now

    KM416V256DJ Datasheets (8)

    Part ECAD Model Manufacturer Description Curated Type PDF
    KM416V256DJ-5 Samsung Electronics 256K x 16-Bit CMOS Dynamic RAM with Fast Page Mode Original PDF
    KM416V256DJ-5 Samsung Electronics 256K x 16-Bit CMOS dynamic RAM with fast page mode, 50ns, 3.3V Original PDF
    KM416V256DJ-6 Samsung Electronics 256K x 16-Bit CMOS Dynamic RAM with Fast Page Mode Original PDF
    KM416V256DJ-6 Samsung Electronics 256K x 16-Bit CMOS dynamic RAM with fast page mode, 60ns, 3.3V Original PDF
    KM416V256DJ-7 Samsung Electronics 256K x 16-Bit CMOS dynamic RAM with fast page mode, 70ns, 3.3V Original PDF
    KM416V256DJ-L-5 Samsung Electronics 256K x 16-Bit CMOS Dynamic RAM with Fast Page Mode Original PDF
    KM416V256DJ-L-6 Samsung Electronics 256K x 16-Bit CMOS Dynamic RAM with Fast Page Mode Original PDF
    KM416V256DJ-L-7 Samsung Electronics 256K x 16-Bit CMOS Dynamic RAM with Fast Page Mode Original PDF

    KM416V256DJ Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    A30Z

    Abstract: 3224B V256D ttl 74112
    Text: KM416V256DJ CMOS DRAM 256K x 16 Bit CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 262,144 x 16 bit Fast Page Mods CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , access time


    OCR Scan     		PDF 16V256DJ 256Kx16 KM416V256DJ Q0322bt. A30Z 3224B V256D ttl 74112

    Untitled

    Abstract: No abstract text available
    Text: K M 4 16 V2 5 6 D J CMOS DRAM ELECTRONICS 256K x 16 Bit CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 262,144 x 16 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , access time


    OCR Scan     		PDF 256Kx16 KM416V256DJ 0G322tM QG322bS 7Tb4142 00322bfci