KM416S4020
Abstract: KM416S4020AT-G
Text: KM416S4020AT SDRAM ELECTRONICS 2M x 16Bitx 2 Bank Synchronous DRAM FEATURES GENERAL DESCRIPTION • JEDEC standard 3.3V Power Supply. • LVTTL/SSTL_3 Class II compatible with multiplexed address. • Dual banks operation. • MRS cycle with address key programs.
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KM416S4020AT
16Bitx
KM416S4020A/KM416S4021A
KM416S4020AT)
0D33D5S
KM416S4020
KM416S4020AT-G
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Untitled
Abstract: No abstract text available
Text: NEW JEDEC SDRAM MODULE KMM466S804AT KMM466S804AT SDRAM SODIMM 8Mx64 SDRAM SODIMM based on 4Mx16, 2Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung KMM466S804AT is a 8M bit x 64 Synchronous - Performance range Dynamic RAM high density memory module. The Samsung
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KMM466S804AT
KMM466S804AT
8Mx64
4Mx16,
400mil
144-pin
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U07K
Abstract: 741i REF04 KM416S4020AT-12
Text: K M 4 16 S 4 0 2 1 A T SDRAM ELECTRONICS 2M x 16Bitx 2 Bank Synchronous DRAM FEATURES GENERAL DESCRIPTION • JEDEC standard 3.3V Power Supply. • LVTTL/SSTL_3 Class II compatible with multiplexed address. • Dual banks operation. • MRS cycle with address key programs.
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16Bitx
KM416S4020A/KM416S4021A
416S4021AT)
7Tb4142
U07K
741i
REF04
KM416S4020AT-12
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KMM366S404AT
Abstract: circuit diagram for auto on off
Text: KMM366S404AT NEW JEDEC SDRAM MODULE KMM366S404AT SDRAM DIMM 4Mx64 SDRAM DIMM based on 4Mx16, 2Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung KMM366S404AT is a 4M bit x 64 Synchronous Dynamic RAM high density memory module. The Samsung
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KMM366S404AT
KMM366S404AT
4Mx64
4Mx16,
400mil
168-pin
circuit diagram for auto on off
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q37s
Abstract: No abstract text available
Text: NEW JEDEC SDRAM MODULE KMM366S804AT KMM366S804AT SDRAM DIMM 8Mx64 SDRAM DIMM based on 4Mx16, 2Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung KMM366S8Q4AT is a 8M bit x 64 Synchronous - Performance range Dynamic RAM high density memory module. The Samsung
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KMM366S804AT
KMM366S804AT
8Mx64
4Mx16,
KMM366S8Q4AT
400mil
168-pin
q37s
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KM416S4020AT-G
Abstract: XC5L a9333
Text: KM416S4020A CMOS SDRAM 2M X 16Bitx 2 Banks Synchronous DRAM FEATURES . . . . . . GENERAL DESCRIPTION JEDEC standard 3.3V power supply LVTTL compatible with multiplexed address Dual banks operation MRS cycle with address key programs CAS Latency 2 & 3
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KM416S4020A
16Bitx
KM416S4020A
10/AP
D037221
KM416S4020AT-G
XC5L
a9333
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Untitled
Abstract: No abstract text available
Text: NEW JEDEC SDRAM MODULE KMM466S804AT2 KMM466S804AT2 SDRAM SODIMM 8Mx64 SDRAM SODIMM based on 4Mx16, 2Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung KMM466S804AT2 is a 8M bit x 64 Synchronous - Performance range Dynamic RAM high density memory module. The Samsung
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KMM466S804AT2
KMM466S804AT2
8Mx64
4Mx16,
KMM466S804AT2-F8
KMM466S804AT2-F0
KMM466S804AT2-F2
400mil
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37L34
Abstract: KMM466S404AT-F0
Text: NEW JEDEC SDRAM MODULE KMM466S404AT KMM466S404AT SDRAM SODIMM 4Mx64 SDRAM SODIMM based on 4Mx16, 2Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung KMM466S404AT is a 4M bit x 64 Synchronous - Performance range Max Freq. Speed
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KMM466S404AT
KMM466S404AT
4Mx64
4Mx16,
400mil
144-pin
37L34
KMM466S404AT-F0
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