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    KM416C254BJ Search Results

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    KM416C254BJ Price and Stock

    Samsung Semiconductor KM416C254BJ-6

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    Bristol Electronics KM416C254BJ-6 77
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    Quest Components KM416C254BJ-6 1
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    Samsung Semiconductor KM416C254BJ-5

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    Bristol Electronics KM416C254BJ-5 15
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    Quest Components KM416C254BJ-5 357
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    KM416C254BJ-5 12
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    SEC KM416C254BJ-7

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    Quest Components KM416C254BJ-7 1,600
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    Samsung Electronics Co. Ltd KM416C254BJ-5

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    Component Electronics, Inc KM416C254BJ-5 4
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    KM416C254BJ Datasheets Context Search

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    Untitled

    Abstract: No abstract text available
    Text: KM416C254BJ 1/2 IL08 * C-MOS 4M(256K x 16)-BIT DYNAMIC RAM WITH EXTENDED DATA OUT - TOP VIEW - 1 V DD (+5V) GND 40 DQ1 2 39 DQ16 DQ2 3 38 DQ15 DQ3 4 37 DQ14 DQ4 5 36 DQ13 V DD 6 (+5V) 34 DQ12 DQ6 8 33 DQ11 DQ7 9 32 DQ10 DQ8 10 31 DQ9 12 N.C W 13


    Original     		PDF KM416C254BJ DQ0-DQ16 DQ9-DQ16

    km416c254b

    Abstract: No abstract text available
    Text: KM416C254B/BL/BLL CMOS DRAM 256K x 1 6 Bit CMOS Dynamic RAM with Extended Data Out GENERAL DESCRIPTION FEATURES • Performance range: tRAC tCAC tRC tHPC KM416C254B/BL7BLL-5 50ns 17ns 90ns 20ns KM416C254B/BL7BLL-6 60ns 17ns 110ns 24ns KM416C254B/BL/BLL-7 70ns


    OCR Scan     		PDF KM416C254B/BL/BLL KM416C254B/BL7BLL-5 KM416C254B/BL7BLL-6 110ns KM416C254B/BL/BLL-7 130ns cycle/64ms 00n02T km416c254b