400F
Abstract: KM29W8000IT KM29W8000T samsung flash bad block mapping
Text: KM29W8000T, KM29W8000IT FLASH MEMORY Document Title 1M x 8 bit NAND Flash Memory Revision History Revision No. History Draft Date Remark 0.0 Data Sheet 1997 April 10th 1997 Advance 1.0 Data Sheet 1998 1. Changed t BERS parameter : 5ms Typ. → 2ms(Typ.) 10ms(Max.) → 4ms(Max.)
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KM29W8000T,
KM29W8000IT
400F
KM29W8000IT
KM29W8000T
samsung flash bad block mapping
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400F
Abstract: KM29W8000IT KM29W8000T
Text: KM29W8000T, KM29W8000IT FLASH MEMORY Document Title 1M x 8 bit NAND Flash Memory Revision History Revision No. History Draft Date Remark 0.0 Data Sheet 1997 April 10th 1997 Advance 1.0 Data Sheet 1998 1. Changed tBERS parameter : 5ms Typ. → 2ms(Typ.) 10ms(Max.) → 4ms(Max.)
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KM29W8000T,
KM29W8000IT
400F
KM29W8000IT
KM29W8000T
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K9F8008W0M
Abstract: K9F8008W0M-TCB0 K9F8008W0M-TIB0 KM29W8000IT KM29W8000T
Text: K9F8008W0M-TCB0, K9F8008W0M-TIB0 FLASH MEMORY Document Title 1M x 8 bit NAND Flash Memory Revision History Revision No. History Draft Date Remark 0.0 Data Sheet 1997 April 10th 1997 Advance 1.0 Data Sheet 1998 1. Changed tBERS parameter : 5ms Typ. → 2ms(Typ.)
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K9F8008W0M-TCB0,
K9F8008W0M-TIB0
K9F8008W0M
K9F8008W0M-TCB0
K9F8008W0M-TIB0
KM29W8000IT
KM29W8000T
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M29W8000
Abstract: No abstract text available
Text: Preliminary KM29W8000T, KM29W8000IT FLASH MEMORY Document Title 1M X 8 bit NAND Flash Memory Revision History Revision NPr History 0.0 1.0 Data Sheet 1997 Data Sheet 1998 1. Changed tBERS param eter: 5ms Typ. -> 2ms(Typ.) 10ms(Max.) -> 4ms(Max.) 2. Changed tPRO G param eter: 1,5ms(Max.) -> 1 Oms(Max)
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KM29W8000T,
KM29W8000IT
M29W8000
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Untitled
Abstract: No abstract text available
Text: FLASH MEMORY KM29W8000T, KM29W8000IT Document Title 1M X 8 bit NAND Flash Memory Revision History Revision No. H istory Draft Date Rem ark 0.0 D ata S h e e t 1997 A pril 10th 1997 A d va n ce 1.0 D ata S h e e t 1998 A pril 10th 1998 P relim in ary J u ly 14th 1998
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KM29W8000T,
KM29W8000IT
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Untitled
Abstract: No abstract text available
Text: FLASH MEMORY KM29W8000T, KM29W8000IT Document Title 1M x 8 bit NAND Flash Memory Revision History Revision No. History Draft Date Remark 0.0 D ata S h e e t 1997 April 10th 1997 A d va n ce 1.0 D ata S h e e t 1998 April 10th 1998 P relim in ary 1. C h a n g e d t BERS p a ra m e te r: 5m s T yp . —> 2 m s(T yp .)
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KM29W8000T,
KM29W8000IT
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TSOP 48 Package nand memory
Abstract: NAND flash memory nor flash 1Mx16 flash TSOP I KM29N040T KM28U800
Text: 1. INTRODUCTION <NOR FLASH MEMORY> <NAND FLASH MEMORY> 2. PRODUCT GUIDE < NOR FLASH MEMORY > Density Org. Supply 2.7V-3.6V 8M bit 16M bit Part Number KM28U800 Features 2Mx8 1Mx16 4.5V-5.5V KM28N800 55/70/90 2.7V-3.6V KM28U160 80/90/120ns Package Standard Temp.
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512KX
1Mx16
KM28N800
KM28U800
90/100/120ns
48CSP
KM28U160
80/90/120ns
KM29U128T
KM29U128IT
TSOP 48 Package nand memory
NAND flash memory
nor flash
1Mx16 flash
TSOP I
KM29N040T
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