Untitled
Abstract: No abstract text available
Text: KM23C8000B G ELECTRONICS CMOS Mask ROM 8M-Bit (1M X8) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • 1,048,576x 8 bit organization • Fast access time :100ns(max.) • Supply voltage : single +5V • Current consumption Operating : 60 mA(max.) Standby : 50 fiA (max.)
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KM23C8000B
100ns
KM23C8000B
32-DIP-600
KM23C8000BG
32-SOP-525
576x8bit.
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Untitled
Abstract: No abstract text available
Text: KM23C8000B G CMOS MASK ROM 8M-Bit (1M X 8) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • • • • The KM23C8000B is a fu lly static mask programmable ROM organized 1 ,0 4 8 ,5 7 6 X 8 bit. It is fabricated using silicon-gate CMOS process technology. •
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KM23C8000B
576x8
100ns
50/iA
32-pin,
asynM23C80006
KM23C8000B)
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Untitled
Abstract: No abstract text available
Text: SAMSUNG ELECTRONICS INC b7E ]> • 7 ^ 4 1 4 5 0D17D30 DbT I SMGK KM23C8000B G CMOS MASK ROM 8M-Bit (1M X 8) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • • • • The KM23C8000B is a fu lly static mask programmable ROM organized 1 ,0 4 8 ,5 7 6 X 8 bit. It is fabricated using
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0D17D30
KM23C8000B
100ns
32-pin,
0D17D33
KM23C8000B)
KM23C8000BG)
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